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1. 发明授权

US06867640B2 Double-sided extended drain field effect transistor, and integrated overvoltage and reverse voltage protection circuit that uses the same 有权
标题翻译：双面扩展漏极场效应晶体管，集成过电压和反向电压保护电路使用相同
公开(公告)号：US06867640B2
公开(公告)日：2005-03-15
申请号：US10611714
申请日：2003-07-01
申请人： Greg Scott , J. Marcos Laraia
发明人： Greg Scott , J. Marcos Laraia
IPC分类号： H01L27/02 , G05F1/10 , G05F3/02
CPC分类号： H01L27/0266
摘要： An integrated overvoltage and reverse voltage protection circuit that includes two p-channel double-sided extended drain transistors coupled to a high voltage source, each having their n-well coupled through a resistor to the high voltage source. For voltage regulation, a voltage divider is coupled in series with a first of these transistors, while the drain of the second transistor is coupled to the gate of the first transistor. For voltage blocking, the voltage divider may span the entire supply voltage. An n-channel transistor couples the second p-channel transistor to a low voltage source. A middle node in the voltage divider is coupled to one input of a comparator, with a reference voltage coupled to the second input. The comparator output drives the gate terminal of the n-channel transistor. A load to be protected may be disposed in parallel with the voltage divider.
摘要翻译：集成的过压和反向电压保护电路，其包括耦合到高电压源的两个p沟道双侧延伸漏极晶体管，每个具有通过电阻器连接到高电压源的n阱。对于电压调节，分压器与这些晶体管中的第一个串联耦合，而第二晶体管的漏极耦合到第一晶体管的栅极。对于电压阻塞，分压器可能跨越整个电源电压。 n沟道晶体管将第二p沟道晶体管耦合到低电压源。分压器中的中间节点耦合到比较器的一个输入端，参考电压耦合到第二输入端。比较器输出驱动n沟道晶体管的栅极端子。要保护的负载可以与分压器并联设置。

2. 发明授权

US06882513B2 Integrated overvoltage and reverse voltage protection circuit 有权
标题翻译：集成过压和反向电压保护电路
公开(公告)号：US06882513B2
公开(公告)日：2005-04-19
申请号：US10243749
申请日：2002-09-13
申请人： J. Marcos Laraia
发明人： J. Marcos Laraia
IPC分类号： H01L27/02 , H02H3/00
CPC分类号： H01L27/0285
摘要： An integrated overvoltage and reverse voltage protection circuit. The protection circuit includes a field-effect transistor having a source terminal coupled to an input terminal of the protection circuit, and a drain terminal coupled to an output terminal of the protection circuit. A resistor is coupled between the source terminal and the body terminal of the field-effect transistor to inhibit reverse current flow during a reverse voltage condition. A voltage-current dependent circuit is coupled between the gate terminal and the source terminal of the field-effect transistor, and is configured to apply a voltage between the gate terminal and the source terminal that is dependent on the current passing through the voltage-current dependent circuit. A current application circuit is coupled to the voltage-current dependent circuit and is configured to apply a current that limits or even altogether stops an applied overvoltage condition from reaching a load circuit.
摘要翻译：集成过压和反向电压保护电路。保护电路包括具有耦合到保护电路的输入端的源极端子和耦合到保护电路的输出端子的漏极端子的场效应晶体管。电阻器耦合在源极端子和场效应晶体管的主体端子之间，以在反向电压条件期间抑制反向电流流动。电压电流相关电路耦合在场效应晶体管的栅极端子和源极端子之间，并且被配置为在栅极端子和源极端子之间施加电压，该电压取决于通过电压 - 电流的电流依赖电路。当前的应用电路耦合到与电压 - 电流相关的电路，并且被配置为施加限制或甚至总共停止所施加的过电压状况的电流到达负载电路。

3. 发明授权

US06351111B1 Circuits and methods for providing a current reference with a controlled temperature coefficient using a series composite resistor 有权
标题翻译：使用串联复合电阻为电流参考提供受控温度系数的电路和方法
公开(公告)号：US06351111B1
公开(公告)日：2002-02-26
申请号：US09834421
申请日：2001-04-13
申请人： J. Marcos Laraia
发明人： J. Marcos Laraia
IPC分类号： G05F326
CPC分类号： G05F3/267 , G05F3/225 , G05F3/245 , Y10S323/907
摘要： A current reference circuit provides a reference current that has a controlled temperature coefficient and is relatively stable with supply voltage fluctuations. The reference leg includes a series of MOS transistors including at least one PMOS transistor that is electrically closer in the series to a high voltage source, at least one NMOS transistor that is electrically closer in the series to the low voltage source. The series composite resistor comprises at least two resistors coupled in series within the current path. The size of the resistors may be designed so as to lower the temperature dependency of the circuit. A bipolar transistor is also coupled in the reference leg. The mirror leg is similar to the reference leg except that no series resistor is provided, and the emitter area of the bipolar resistor in the reference leg is larger than the emitter area of the bipolar transistor in the mirror leg.
摘要翻译：电流参考电路提供具有受控温度系数并且在电源电压波动时相对稳定的参考电流。参考支路包括一系列MOS晶体管，其包括至少一个PMOS晶体管，其至少一个串联连接到高电压源的PMOS晶体管，至少一个与串联连接到低电压源的NMOS晶体管。串联复合电阻器包括在电流路径内串联耦合的至少两个电阻器。可以设计电阻器的尺寸以降低电路的温度依赖性。双极晶体管也耦合在参考支路中。除了不提供串联电阻器之外，镜腿与参考腿相似，参考腿中的双极性电阻器的发射极面积大于镜腿中的双极晶体管的发射极面积。

4. 发明授权

US07279757B1 Double-sided extended drain field effect transistor 有权
标题翻译：双面扩展漏极场效应晶体管
公开(公告)号：US07279757B1
公开(公告)日：2007-10-09
申请号：US11010892
申请日：2004-12-13
申请人： Greg Scott , J. Marcos Laraia
发明人： Greg Scott , J. Marcos Laraia
IPC分类号： H01L29/76
CPC分类号： H01L27/0266
摘要： A double-sided extended drain field effect transistor that includes a gate terminal overlying a channel region in a substrate. The substrate includes a drain region of a first carrier type that is laterally separated from the channel region by a first RESURF region of the first carrier type, and a source region of the first carrier type that is laterally separated from the channel region by a second RESURF region of the first carrier type. Regions of the first carrier type may also be disposed laterally adjacent to the source and drain regions on the opposite lateral side as compared to the RESURF regions. This configuration improves the reverse bias breakdown voltage of the transistor.
摘要翻译：一种双面扩展漏极场效应晶体管，其包括覆盖衬底中的沟道区的栅极端子。衬底包括第一载体类型的漏极区域，其通过第一载流子类型的第一RESURF区域与沟道区域横向分离，并且第一载流子类型的源极区域与沟道区域横向分开第二第一载波类型的RESURF区域。与RESURF区域相比，第一载体类型的区域也可以相对于相对侧面上的源极和漏极区域侧向地布置。该结构改善了晶体管的反向偏压击穿电压。

5. 发明授权

US06342781B1 Circuits and methods for providing a bandgap voltage reference using composite resistors 有权
标题翻译：使用复合电阻提供带隙电压基准的电路和方法
公开(公告)号：US06342781B1
公开(公告)日：2002-01-29
申请号：US09834709
申请日：2001-04-13
申请人： J. Marcos Laraia
发明人： J. Marcos Laraia
IPC分类号： G05F316
CPC分类号： G05F3/30
摘要： A bandgap voltage reference circuit includes a current source and a bipolar transistor that are coupled together such that current from the current source passes through the bipolar transistor to a low voltage source such as ground. A composite resistor is coupled in series between the current source and the bipolar transistor. The composite resistor of this voltage reference leg of the circuit is composed of at least two component resistors that may be fabricated so as to adjust the temperature coefficient of the bandgap voltage reference as a whole.
摘要翻译：带隙电压参考电路包括电流源和耦合在一起的双极晶体管，使得来自电流源的电流通过双极晶体管到低电压源，例如接地。复合电阻器串联耦合在电流源和双极晶体管之间。该电路的该基准电压源的复合电阻由至少两个分量电阻器组成，该电阻器可以制作成整体来调节带隙电压基准的温度系数。

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