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1. 发明授权

US11201278B2 Josephson Junction using molecular beam epitaxy 有权
公开(公告)号：US11201278B2
公开(公告)日：2021-12-14
申请号：US16576432
申请日：2019-09-19
申请人： Ambature, Inc.
发明人： Michael S. Lebby , Davis H. Hartmann
IPC分类号： H01L39/24 , H01L39/02 , H01L39/22
摘要： According to various implementations of the invention, a vertical Josephson Junction device may be realized using molecular beam epitaxy (MBE) growth of YBCO and PBCO epitaxial layers in an a-axis crystal orientation. Various implementations of the invention provide improved vertical JJ devices using SiC or LSGO substrates; GaN, AlN, or MgO buffer layers; YBCO or LSGO template layers; YBCO conductive layers and various combinations of barrier layers that include PBCO, NBCO, and DBCO. Such JJ devices are simple to fabricate with wet and dry etching, and allow for superior current flow across the barrier layers.

2. 发明申请

US20190326501A1 ELECTRICAL, MECHANICAL, COMPUTING, AND/OR OTHER DEVICES FORMED OF EXTREMELY LOW RESISTANCE MATERIALS 审中-公开
公开(公告)号：US20190326501A1
公开(公告)日：2019-10-24
申请号：US16407160
申请日：2019-05-08
申请人： Ambature Inc.
发明人： Douglas J. Gilbert , Y. Eugene SHTEYN , Michae J. SMITH , Joel Patrick Hanna , Paul GREENLAND , Brian COPPA , Forrest NORTH
IPC分类号： H01L39/12 , H01B1/00 , G01R33/035 , C04B35/45 , G01K7/00 , H01F6/06 , H01L39/14 , H01L39/22 , H02K55/00 , H02K3/02 , G01L21/12
摘要： Electrical, mechanical, computing, and/or other devices that include components formed of extremely low resistance (ELR) materials, including, but not limited to, modified ELR materials, layered ELR materials, and new ELR materials, are described.

3. 发明授权

US11974508B2 Josephson Junction using molecular beam epitaxy 有权
公开(公告)号：US11974508B2
公开(公告)日：2024-04-30
申请号：US17547810
申请日：2021-12-10
申请人： Ambature, Inc.
发明人： Michael S. Lebby , Davis H. Hartmann
IPC分类号： H10N60/01 , H10N60/12 , H10N60/80
CPC分类号： H10N60/0941 , H10N60/0381 , H10N60/0632 , H10N60/124 , H10N60/805
摘要： According to various implementations of the invention, a vertical Josephson Junction device may be realized using molecular beam epitaxy (MBE) growth of YBCO and PBCO epitaxial layers in an a-axis crystal orientation. Various implementations of the invention provide improved vertical JJ devices using SiC or LSGO substrates; GaN, AlN, or MgO buffer layers; YBCO or LSGO template layers; YBCO conductive layers and various combinations of barrier layers that include PBCO, NBCO, and DBCO. Such JJ devices are simple to fabricate with wet and dry etching, and allow for superior current flow across the barrier layers.

4. 发明授权

US11930722B2 High temperature superconducting films and methods for modifying and creating same 有权
公开(公告)号：US11930722B2
公开(公告)日：2024-03-12
申请号：US17727784
申请日：2022-04-24
申请人： Ambature, Inc.
发明人： Douglas J. Gilbert , Timothy S. Cale
IPC分类号： H10N60/85 , H10N60/01
CPC分类号： H10N60/858 , H10N60/01 , H10N60/0296 , H10N60/85 , Y10T29/49014 , Y10T428/24322 , Y10T428/31678
摘要： Operational characteristics of an high temperature superconducting (“HTS”) film comprised of an HTS material may be improved by depositing a modifying material onto appropriate surfaces of the HTS film to create a modified HTS film. In some implementations of the invention, the HTS film may be in the form of a “c-film.” In some implementations of the invention, the HTS film may be in the form of an “a-b film,” an “a-film” or a “b-film.” The modified HTS film has improved operational characteristics over the HTS film alone or without the modifying material. Such operational characteristics may include operating in a superconducting state at increased temperatures, carrying additional electrical charge, operating with improved magnetic properties, operating with improved mechanic properties or other improved operational characteristics. In some implementations of the invention, the HTS material is a mixed-valence copper-oxide perovskite, such as, but not limited to YBCO. In some implementations of the invention, the modifying material is a conductive material that bonds easily to oxygen, such as, but not limited to, chromium.

5. 发明授权

US11289639B2 Electrical, mechanical, computing, and/or other devices formed of extremely low resistance materials 有权
公开(公告)号：US11289639B2
公开(公告)日：2022-03-29
申请号：US16407160
申请日：2019-05-08
申请人： Ambature Inc.
发明人： Douglas J. Gilbert , Y. Eugene Shteyn , Michael J. Smith , Joel Patrick Hanna , Paul Greenland , Brian Coppa , Forrest North
IPC分类号： H01B1/08 , H01L39/00 , H01L39/12 , G01L21/12 , G01R33/035 , G01K7/00 , H01F6/06 , H01L39/14 , H01L39/22 , H02K55/00 , H02K3/02 , C04B35/45 , H01B1/00 , H01L23/532
摘要： Electrical, mechanical, computing, and/or other devices that include components formed of extremely low resistance (ELR) materials, including, but not limited to, modified ELR materials, layered ELR materials, and new ELR materials, are described.

6. 发明申请

US20160351303A1 Extremely Low Resistance Films and Methods for Modifying or Creating Same 审中-公开
标题翻译：极低的电阻膜和修改或创建相同的方法
公开(公告)号：US20160351303A1
公开(公告)日：2016-12-01
申请号：US15167535
申请日：2016-05-27
申请人： Ambature, Inc.
发明人： Douglas J. Gilbert , Timothy S. Cale
IPC分类号： H01B12/06 , H01B1/08 , H01B12/14 , H01L39/12 , H01L39/24
CPC分类号： H01B12/06 , B05D1/36 , H01B1/08 , H01B12/14 , H01C7/00 , H01L39/12 , H01L39/125 , H01L39/126 , H01L39/24 , H01L39/2419 , H01L39/2464 , H01L39/2487 , Y10T428/31678
摘要： Operational characteristics of an extremely low resistance (“ELR”) film comprised of an ELR material may be improved by depositing a modifying material onto appropriate surfaces of the ELR film to create a modified ELR film. In some implementations of the invention, the ELR film may be in the form of a “c-film.” In some implementations of the invention, the ELR film may be in the form of an “a-b film,” an “a-film” or a “b-film.” The modified ELR film has improved operational characteristics over the ELR film alone or without the modifying material. Such operational characteristics may include operating in an ELR state at increased temperatures, carrying additional electrical charge, operating with improved magnetic properties, operating with improved mechanic properties or other improved operational characteristics. In some implementations of the invention, the ELR material is a mixed-valence copper-oxide perovskite, such as, but not limited to YBCO. In some implementations of the invention, the modifying material is a conductive material that bonds easily to oxygen, such as, but not limited to, chromium.
摘要翻译：通过在ELR膜的适当表面上沉积改性材料以产生改性的ELR膜，可以改善由ELR材料构成的极低电阻（“ELR”）膜的操作特性。在本发明的一些实施方案中，ELR膜可以是“c膜”的形式。在本发明的一些实施方案中，ELR膜可以是“ab膜”的形式，“a膜” “或”b膜“。改性的ELR膜具有比单独的ELR膜或没有改性材料改善的操作特性。这种操作特征可以包括在升高的温度下操作ELR状态，携带额外的电荷，以改进的磁性能操作，以改进的机械性能或其他改进的操作特性进行操作。在本发明的一些实施方案中，ELR材料是混合价态的氧化铜 - 钙钛矿，例如但不限于YBCO。在本发明的一些实施方案中，改性材料是易于氧接触的导电材料，例如但不限于铬。

7. 发明申请

US20140329686A1 EXTREMELY LOW RESISTANCE COMPOSITIONS AND METHODS FOR CREATING SAME 有权
标题翻译：极低的电阻组合物及其制造方法
公开(公告)号：US20140329686A1
公开(公告)日：2014-11-06
申请号：US14195392
申请日：2014-03-03
申请人： Ambature, Inc.
发明人： Douglas J. Gilbert , Timothy S. Cale
IPC分类号： H01L39/12 , H01L39/24
CPC分类号： H01L39/128 , H01L39/2422 , H01L39/2464 , Y10T428/31678
摘要： The invention pertains to creating new extremely low resistance (“ELR”) materials, which may include high temperature superconducting (“HTS”) materials. In some implementations of the invention, an ELR material may be modified by depositing a layer of modifying material unto the ELR material to form a modified ELR material. The modified ELR material has improved operational characteristics over the ELR material alone. Such operational characteristics may include operating at increased temperatures or carrying additional electrical charge or other operational characteristics. In some implementations of the invention, the ELR material is a cuprate-perovskite, such as, but not limited to BSCCO. In some implementations of the invention, the modifying material is a conductive material that bonds easily to oxygen, such as, but not limited to, chromium.
摘要翻译：本发明涉及创建新的极低电阻（“ELR”）材料，其可以包括高温超导（“HTS”）材料。在本发明的一些实施方案中，ELR材料可以通过将改性材料层沉积到ELR材料上来形成修饰的ELR材料。改进的ELR材料仅具有比ELR材料更好的操作特性。这种操作特征可以包括在升高的温度下操作或携带额外的电荷或其他操作特性。在本发明的一些实施方案中，ELR材料是铜酸钙 - 钙钛矿，例如但不限于BSCCO。在本发明的一些实施方案中，改性材料是易于氧接触的导电材料，例如但不限于铬。

8. 发明授权

US12063874B2 Electrical, mechanical, computing, and/or other devices formed of extremely low resistance materials 有权
公开(公告)号：US12063874B2
公开(公告)日：2024-08-13
申请号：US17705847
申请日：2022-03-28
申请人： Ambature Inc.
发明人： Douglas J. Gilbert , Y. Eugene Shteyn , Michael J. Smith , Joel Patrick Hanna , Paul Greenland , Brian Coppa , Forrest North
IPC分类号： H01B1/00 , C04B35/45 , G01K7/00 , G01L21/12 , G01R33/035 , H01F6/06 , H01L39/12 , H02K3/02 , H02K55/00 , H10N60/12 , H10N60/20 , H10N60/85 , H01L23/532
CPC分类号： H10N60/857 , C04B35/45 , G01K7/006 , G01L21/12 , G01R33/0354 , H01B1/00 , H01F6/06 , H02K3/02 , H02K55/00 , H10N60/124 , H10N60/203 , H10N60/858 , H01L23/53285 , H01L2224/48091 , H01L2224/48247 , H01L2924/01015 , H01L2924/01047 , H01L2924/10253 , H01L2924/10329 , H01L2924/1305 , H01L2924/13091 , H01L2924/1461 , H01L2924/181 , H01L2924/30107 , H01L2924/3011 , H01L2924/3025 , Y02E40/60 , H01L2224/48091 , H01L2924/00014 , H01L2924/01047 , H01L2924/00 , H01L2924/01015 , H01L2924/00 , H01L2924/3011 , H01L2924/00 , H01L2924/3025 , H01L2924/00 , H01L2924/30107 , H01L2924/00 , H01L2924/13091 , H01L2924/00 , H01L2924/1461 , H01L2924/00 , H01L2924/1305 , H01L2924/00 , H01L2924/181 , H01L2924/00012
摘要： Electrical, mechanical, computing, and/or other devices that include components formed of extremely low resistance (ELR) materials, including, but not limited to, modified ELR materials, layered ELR materials, and new ELR materials, are described.

9. 发明公开

US20240062933A1 Extremely Low Resistance Films and Methods for Modifying or Creating Same 审中-公开
公开(公告)号：US20240062933A1
公开(公告)日：2024-02-22
申请号：US17945351
申请日：2022-09-15
申请人： Ambature, Inc.
发明人： Douglas J. Gilbert , Timothy S. Cale
IPC分类号： H01B12/06 , H01B1/08 , H01C7/00 , H10N60/01 , H10N60/85 , B05D1/36 , H01B12/14
CPC分类号： H01B12/06 , H01B1/08 , H01C7/00 , H10N60/01 , H10N60/85 , H10N60/0268 , H10N60/855 , H10N60/0856 , H10N60/857 , B05D1/36 , H01B12/14 , Y10T428/31678 , H10N60/0661
摘要： Operational characteristics of an extremely low resistance (“ELR”) film comprised of an ELR material may be improved by depositing a modifying material onto appropriate surfaces of the ELR film to create a modified ELR film. In some implementations of the invention, the ELR film may be in the form of a “c-film.” In some implementations of the invention, the ELR film may be in the form of an “a-b film,” an “a-film” or a “b-film.” The modified ELR film has improved operational characteristics over the ELR film alone or without the modifying material. Such operational characteristics may include operating in an ELR state at increased temperatures, carrying additional electrical charge, operating with improved magnetic properties, operating with improved mechanic properties or other improved operational characteristics. In some implementations of the invention, the ELR material is a mixed-valence copper-oxide perovskite, such as, but not limited to YBCO. In some implementations of the invention, the modifying material is a conductive material that bonds easily to oxygen, such as, but not limited to, chromium.

10. 发明公开

US20230172075A1 Axis Josephson Junctions with Improved Smoothness 审中-公开
公开(公告)号：US20230172075A1
公开(公告)日：2023-06-01
申请号：US17859419
申请日：2022-07-07
申请人： Ambature, Inc.
发明人： Mitch Robson , Michael S. Lebby , Davis H. Hartmann
IPC分类号： H10N60/01 , H10N60/12 , H10N60/85
CPC分类号： H10N60/0912 , H10N60/12 , H10N60/858 , H10N60/0688
摘要： According to various implementations of the invention, high quality a-axis XBCO may be grown with low surface roughness. According to various implementations of the invention, low surface roughness may be obtained by: 1) adequate substrate preparation; 2) calibration of flux rates for constituent atoms; and/or 3) appropriate control of temperature during crystal growth. According to various implementions of the invention, a wafer comprises a smoothing layer of c-axis XBCO; a first conducting layer of a-axis XBCO formed on the smoothing layer; an insulating layer formed on the first conducting layer; and a second conducting layer of a-axis XBCO formed on the insulating layer, where, for a same surface roughness, a thickness of the smoothing layer and the first conducting layer combined is greater than a thickness of the first conducting layer without the smoothing layer. According to various implementations of the invention, a Josephson Junction is etched out of the XBCO/insulating layer/XBCO trilayer by: ion mill etching the top XBCO layer and some of the insulating layer to intentionally leave some of the insulating layer on the bottom XBCO layer; and/or ion mill etching at least the insulating layer at an off angle to reduce or minimize ion damage to the bottom XBCO layer otherwise introduced by the ion mill.

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