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1. 发明授权

US06610999B2 Multiple stage high power diode 有权
标题翻译：多级大功率二极管
公开(公告)号：US06610999B2
公开(公告)日：2003-08-26
申请号：US09851692
申请日：2001-05-08
申请人： Zvonimir Z. Bandic , Eric C. Piquette , Thomas C. McGill
发明人： Zvonimir Z. Bandic , Eric C. Piquette , Thomas C. McGill
IPC分类号： H01L310256
CPC分类号： H01L29/1608 , H01L27/0814 , H01L27/095 , H01L29/2003 , H01L29/47 , H01L29/475 , H01L29/872
摘要： A Schottky rectifier has multiple stages with substantially identical or very similar structures. Each stage includes a nitride-based semiconductor layer, a Schottky contact formed on one surface of the semiconductor layer, and an ohmic contact formed on an opposite surface of the semiconductor layer. The Schottky layer is formed from a metallic material with a high metal work function, and the ohmic contact is formed from a metallic material with a low metal work function. At least one of the stages is a middle stage located between two adjacent stages, such that the Schottky contact of the middle stage and the ohmic contact of one of the adjacent stages are joined together, and such that the ohmic contact of the middle stage and the Schottky contact of another one of the adjacent stages are joined together.
摘要翻译：肖特基整流器具有多个阶段，具有基本相同或非常相似的结构。每个级包括氮化物基半导体层，形成在半导体层的一个表面上的肖特基接触和形成在半导体层的相对表面上的欧姆接触。肖特基层由具有高金属功能的金属材料形成，并且欧姆接触由具有低金属功函数的金属材料形成。至少一个阶段是位于两个相邻阶段之间的中间阶段，使得中间阶段的肖特基接触和相邻阶段之一的欧姆接触被连接在一起，并且使得中间阶段的欧姆接触和另一个相邻级的肖特基接触被连接在一起。

2. 发明授权

US06229193B1 Multiple stage high power diode 失效
公开(公告)号：US06229193B1
公开(公告)日：2001-05-08
申请号：US09283653
申请日：1999-04-01
申请人： Zvonimir Z. Bandic , Eric C. Piquette , Thomas C. McGill
发明人： Zvonimir Z. Bandic , Eric C. Piquette , Thomas C. McGill
IPC分类号： H01L27095
CPC分类号： H01L29/1608 , H01L27/0814 , H01L27/095 , H01L29/2003 , H01L29/47 , H01L29/475 , H01L29/872
摘要： A Schottky rectifier has multiple stages with substantially identical or very similar structures. Each stage includes a nitride-based semiconductor layer, a Schottky contact formed on one surface of the semiconductor layer, and an ohmic contact formed on an opposite surface of the semiconductor layer. The Schottky layer is formed from a metallic material with a high metal work function, and the ohmic contact is formed from a metallic material with a low metal work function. At least one of the stages is a middle stage located between two adjacent stages, such that the Schottky contact of the middle stage and the ohmic contact of one of the adjacent stages are joined together, and such that the ohmic contact of the middle stage and the Schottky contact of another one of the adjacent stages are joined together.

3. 发明授权

US6093952A Higher power gallium nitride schottky rectifier 有权
标题翻译：高功率氮化镓肖特基整流器
公开(公告)号：US6093952A
公开(公告)日：2000-07-25
申请号：US283009
申请日：1999-03-31
申请人： Zvonimir Z. Bandic , Eric C. Piquette , Thomas C. McGill
发明人： Zvonimir Z. Bandic , Eric C. Piquette , Thomas C. McGill
IPC分类号： H01L21/318 , H01L29/872 , H01L27/095
CPC分类号： H01L21/318 , H01L29/872
摘要： A Schottky high power rectifier having a nitride insulator formed on the surface of a GaN substrate. The nitride insulator increases the electric field breakdown suppression at or near the surface of the rectifier below the insulator. In a preferred embodiment, the nitride insulator is an epitaxially grown aluminum nitride insulator.
摘要翻译：肖特基大功率整流器具有形成在GaN衬底的表面上的氮化物绝缘体。氮化物绝缘体增加了绝缘体下面整流表面处或附近的电场击穿抑制。在优选实施例中，氮化物绝缘体是外延生长的氮化铝绝缘体。

4. 发明授权

US6144045A High power devices based on gallium nitride and aluminum gallium nitride semiconductor heterostructures 失效
标题翻译：基于氮化镓和氮化镓铝半导体异质结构的大功率器件
公开(公告)号：US6144045A
公开(公告)日：2000-11-07
申请号：US285484
申请日：1999-04-02
申请人： Zvonimir Z. Bandic , Eric C. Piquette , Thomas C. McGill
发明人： Zvonimir Z. Bandic , Eric C. Piquette , Thomas C. McGill
IPC分类号： H01L29/201 , H01L29/205 , H01L29/74 , H01L29/87
CPC分类号： H01L29/87 , H01L29/201 , H01L29/205 , H01L29/74
摘要： High power thyristor-type devices comprising a first layer of p-type doped semiconductor alloy aluminum gallium nitride, a second layer of n-type doped aluminum gallium nitride with lower aluminum content than the first layer, a third layer of p-type doped aluminum gallium nitride with a higher aluminum content than the second layer, and a fourth layer of aluminum gallium nitride of n-type doping. The difference in hole and electron energies (band offsets) across the interface between aluminum gallium nitride and gallium nitride are such that hole and electron transfer are enhanced from aluminum gallium nitride to gallium nitride, or hole and electron transfer are suppressed from gallium nitride to aluminum gallium nitride. Aluminum content in layers 1 and 2 is chosen such that hole transfer in the forward biased conduction state of the device is enhanced, and suppressed in the reverse biased blocking state of the device. Aluminum content in layers 2 and 3 is chosen such that hole transfer in the forward biased blocking state of the device is suppressed, which reduces leakage current and enhances hole transfer into layer 2 when the device is changing from the forward biased blocking state to the forward biased conduction state. Triggering of the device may be provided by a gate contact to the third layer. Various exemplary embodiments are disclosed.
摘要翻译：大功率晶闸管型器件包括第一层p型掺杂半导体合金氮化铝镓，具有比第一层低的铝含量的n型掺杂的氮化铝镓的第二层，第三层p型掺杂的铝具有比第二层高的铝含量的氮化镓，以及n型掺杂的第四层氮化镓铝。氮化镓和氮化镓之间的界面上的空穴和电子能量（带偏移）的差异使得从氮化镓铝到氮化镓的空穴和电子转移增强，或者从氮化镓到铝的空穴和电子转移被抑制氮化镓。选择层1和2中的铝含量使得器件的正向偏置导通状态中的空穴传输增强，并且在器件的反向偏置阻塞状态下被抑制。选择层2和3中的铝含量，使得器件的正向偏压阻挡状态下的空穴传输受到抑制，这降低了泄漏电流并且当器件从正向偏置阻塞状态向前转变时增强了到层2中的空穴传输偏置导通状态。可以通过与第三层的栅极接触来提供器件的触发。公开了各种示例性实施例。

5. 发明授权

US08874875B2 ICC-NCQ command scheduling for shingle-written magnetic recording (SMR) Drives 有权
标题翻译：用于瓦楞纸磁记录（SMR）驱动器的ICC-NCQ命令调度
公开(公告)号：US08874875B2
公开(公告)日：2014-10-28
申请号：US13537293
申请日：2012-06-29
申请人： Zvonimir Z. Bandic , Cyril Guyot
发明人： Zvonimir Z. Bandic , Cyril Guyot
IPC分类号： G06F12/10 , G06F12/02
CPC分类号： G06F12/0292 , G06F12/0253 , G06F12/08 , G06F12/0875 , G06F12/10 , G11B5/012
摘要： ICC-NCQ priority and deadline information in conjunction with an estimation of command access time that is specific to SMR drives are used improve command queue optimization. Estimated completion times are determined based on the internal subcommands that the drive has to execute to complete the host read or write command taking into account whether all or part of the data will be or already is stored in write-twice cache, E-region and/or I-region. The command processor selects the next command for execution based on calculated access times with adjusted priority based on the specified deadline for the command. As the deadline approaches, the priority of the command increases. For high priority data writes as specified by a host, an optimized storage plan is selected as appropriate using the “write-twice cache” (WTC) region, E-region or I-region.
摘要翻译：使用ICC-NCQ优先级和截止日期信息以及特定于SMR驱动器的命令访问时间的估计来改进命令队列优化。估计的完成时间是基于驱动器执行的内部子命令来确定的，以完成主机读或写命令，考虑到全部或部分数据是否已经存储在二次写入高速缓存，E区和 /或I区域。命令处理器根据计划的访问次数，根据指定的最终期限，选择下一个执行命令，并以调整的优先级。随着截止日期的到来，命令的优先级增加。对于由主机指定的高优先级数据写入，使用“两倍写入高速缓存”（WTC）区域，E区域或I区域，适当地选择优化的存储方案。

6. 发明授权

US08724248B2 Method and apparatus for compensating vibration by adjusting track pitch 有权
标题翻译：通过调节轨道间距来补偿振动的方法和装置
公开(公告)号：US08724248B2
公开(公告)日：2014-05-13
申请号：US13306736
申请日：2011-11-29
申请人： Abhishek Dhanda , Toshiki Hirano , Tetsuo Semba , Zvonimir Z. Bandic
发明人： Abhishek Dhanda , Toshiki Hirano , Tetsuo Semba , Zvonimir Z. Bandic
IPC分类号： G11B21/02
CPC分类号： G11B5/59627 , G11B5/59694 , G11B20/1217 , G11B2020/1228 , G11B2020/1238 , G11B2220/2516
摘要： A method, apparatus and a data storage device are provided for implementing data track pitch adjustment for data written on a recordable surface of a storage device under operational vibration conditions. An operational vibration disturbance spectrum is detected during a write operation and the data track pitch is selectively adjusted based on the detected operational vibration disturbance spectrum. The adjusted track pitch information is saved and used during a read operation.
摘要翻译：提供了一种方法，装置和数据存储装置，用于在操作的振动条件下为存储装置的可记录表面上写入的数据实现数据轨道间距调整。在写入操作期间检测到操作的振动干扰频谱，并且基于检测到的操作振动干扰谱选择性地调整数据轨道间距。调整后的音高信息在读取操作期间被保存和使用。

7. 发明申请

US20140002922A1 Failure-Resistant Multi-LUN Hard Disk Drive 有权
标题翻译：防故障多LUN硬盘驱动器
公开(公告)号：US20140002922A1
公开(公告)日：2014-01-02
申请号：US13536103
申请日：2012-06-28
申请人： Zvonimir Z. Bandic , Cyril Guyot
发明人： Zvonimir Z. Bandic , Cyril Guyot
IPC分类号： G11B21/02 , G11B15/04
CPC分类号： G06F3/0676 , G06F3/0613 , G06F3/0658 , G06F3/0659 , G11B20/1217
摘要： Approaches are provided for a hard-disk drive (HDD) and techniques for using multiple LUNs per HDD where each LUN is mapped to a head/disk interface. In one example, a HDD generates multiple LUNs and assigns each to a single head, such that data written by a first head is only associated to a first LUN, and so forth.
摘要翻译：提供硬盘驱动器（HDD）的方法以及每个HDD使用多个LUN的技术，其中每个LUN映射到磁头/磁盘接口。在一个示例中，HDD生成多个LUN并将其分配给单个头，使得由第一头写入的数据仅与第一LUN相关联等等。

8. 发明授权

US08593748B1 Shingled magnetic recording disk drive with compensation for the effect of far track erasure (FTE) on adjacent data bands 有权
标题翻译：带有磁带记录磁盘驱动器，可补偿相邻数据带上的远距离擦除（FTE）的影响
公开(公告)号：US08593748B1
公开(公告)日：2013-11-26
申请号：US13487310
申请日：2012-06-04
申请人： Zvonimir Z. Bandic , Damien Cyril Daniel Le Moal , Shad Henry Thorstenson
发明人： Zvonimir Z. Bandic , Damien Cyril Daniel Le Moal , Shad Henry Thorstenson
IPC分类号： G11B27/36 , G11B5/09 , G11B19/04
CPC分类号： G11B5/09 , G11B19/045
摘要： A shingled magnetic recording (SMR) disk drive has concentric shingled data tracks having data sectors with physical block addresses (PBAs), with the tracks being arranged in annular bands separated by annular inter-band gaps. The disk drive also has an on-disk extended cache region and may have writable inter-band cache (IBC) tracks in the inter-band gaps. A count is maintained in memory for each band and each IBC, and the count is incremented for each writing to a band or an IBC. When a count for a band or IBC reaches a predetermined threshold, the data is read from the tracks in the boundary region of the adjacent band that are within the range of the FTE and that data is then written to the extended cache. The FTE-affected tracks are then invalidated, meaning that PBAs can no longer be assigned to the data sectors in those tracks.
摘要翻译：具有带状磁记录（SMR）磁盘驱动器具有带有具有物理块地址（PBA）的数据扇区的同心带状数据轨道，轨道被布置在环形带间隔开的环形带中。磁盘驱动器还具有磁盘扩展高速缓存区域，并且可能在带间隙中具有可写入的带间高速缓存（IBC）轨迹。对于每个频带和每个IBC，在存储器中保持计数，并且对于每个写入频带或IBC，计数递增。当频带或IBC的计数达到预定阈值时，从在FTE范围内的相邻频带的边界区域中的轨道读取数据，然后将数据写入扩展高速缓存。然后，受FTE影响的轨道无效，这意味着PBA不能再分配给这些轨道中的数据扇区。

9. 发明申请

US20130246703A1 SHINGLED MAGNETIC RECORDING DISK DRIVE WITH INTER-BAND DISK CACHE AND MINIMIZATION OF THE EFFECT OF FAR TRACK ERASURE ON ADJACENT DATA BANDS 有权
标题翻译：带有磁带盘的快速磁记录磁盘驱动器和最小化跟踪擦除对相邻数据库的影响
公开(公告)号：US20130246703A1
公开(公告)日：2013-09-19
申请号：US13423178
申请日：2012-03-17
申请人： Zvonimir Z. Bandic , Cyril Guyot , Tomohiro Harayama , Robert Euginiu Mateescu , Shad Henry Thorstenson , Timothy Kohchih Tsai
发明人： Zvonimir Z. Bandic , Cyril Guyot , Tomohiro Harayama , Robert Euginiu Mateescu , Shad Henry Thorstenson , Timothy Kohchih Tsai
IPC分类号： G06F12/08
CPC分类号： G11B20/10527 , G06F12/0866 , G06F2212/313 , G11B5/012 , G11B20/10388 , G11B20/1879
摘要： A shingled magnetic recording hard disk drive that uses writeable cache tracks in the inter-band gaps between the annular data bands minimizes the effect of far track erasure (FTE) in the boundary regions of annular data bands caused by writing to the cache tracks. Based on the relative FTE effect for all the tracks in a range of tracks of the cache track being written, a count increment (CI) table or a cumulative count increment (CCI) table is maintained. For every writing to a cache track, a count for each track in an adjacent boundary region, or a cumulative count for each adjacent boundary region, is increased. When the count value for a track, or the cumulative count for a boundary region, reaches a predetermined threshold the data is read from that band and rewritten to the same band.
摘要翻译：在环形数据带之间的带间间隙中使用可写入高速缓存轨迹的带状磁记录硬盘驱动器将通过写入高速缓存轨道引起的环形数据带的边界区域中的远轨擦除（FTE）的影响最小化。基于正在写入的高速缓存磁道的磁道范围内的所有磁道的相对FTE效应，保持计数增量（CI）表或累积计数增量（CCI）表。对于对高速缓存轨道的每次写入，相邻边界区域中的每个轨道的计数或每个相邻边界区域的累积计数增加。当轨道的计数值或边界区域的累积计数达到预定阈值时，从该频带读取数据并重写到相同的频带。

10. 发明授权

US08537481B1 Shingled magnetic recording disk drive with minimization of the effect of far track erasure on adjacent data bands 有权
标题翻译：具有最小化远距离擦除对相邻数据带的影响的嵌入式磁记录磁盘驱动器
公开(公告)号：US08537481B1
公开(公告)日：2013-09-17
申请号：US13423177
申请日：2012-03-17
申请人： Zvonimir Z. Bandic , Cyril Guyot , Tomohiro Harayama , Robert Eugeniu Mateescu , Shad Henry Thorstenson , Timothy Kohchih Tsai
发明人： Zvonimir Z. Bandic , Cyril Guyot , Tomohiro Harayama , Robert Eugeniu Mateescu , Shad Henry Thorstenson , Timothy Kohchih Tsai
IPC分类号： G11B27/36
CPC分类号： G11B27/36 , G11B5/012 , G11B20/1258 , G11B20/1816 , G11B2020/10898 , G11B2020/1298
摘要： A shingled magnetic recording (SMR) hard disk drive (HDD) essentially eliminates the effect of far track erasure (FTE) in the boundary regions of annular data bands caused by writing in the boundary regions of adjacent annular data bands. The extent of the FTE effect is determined for each track within a range of tracks of the track being written. Based on the relative FTE effect for all the tracks in the range, a count increment (CI) table or a cumulative count increment (CCI) table is maintained for all the tracks in the range. For every writing to a track in a boundary region, a count for each track in an adjacent boundary region, or a cumulative count for the adjacent boundary region, is increased. When the count reaches a predetermined threshold the data is read from that band and rewritten to the same band.
摘要翻译：磁带录音（SMR）硬盘驱动器（HDD）基本上消除了在相邻环形数据频带的边界区域中写入引起的环形数据频带的边界区域中的远跟踪擦除（FTE）的影响。对正在写入的轨道的轨道范围内的每个轨道确定FTE效果的程度。基于该范围内所有轨道的相对FTE效应，对该范围内的所有轨道维持计数增量（CI）表或累积计数增量（CCI）表。对于对边界区域中的轨迹的每次写入，相邻边界区域中的每个轨道的计数或相邻边界区域的累积计数增加。当计数达到预定阈值时，从该频带读取数据并重写到相同的频带。

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