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1. 发明授权

US06100149A Method for rapid thermal processing (RTP) of silicon substrates 失效
标题翻译：硅衬底的快速热处理（RTP）方法
公开(公告)号：US06100149A
公开(公告)日：2000-08-08
申请号：US886215
申请日：1997-07-01
申请人： Zsolt Nenyei , Wilfried Lerch , Helmut Sommer
发明人： Zsolt Nenyei , Wilfried Lerch , Helmut Sommer
IPC分类号： H01L21/26 , H01L21/28 , H01L21/324 , H01L21/336
CPC分类号： H01L21/3247 , H01L21/28185 , H01L21/28211 , H01L21/324
摘要： A method of rapid thermal processing (RTP) of a silicon substrate is presented, where a very low partial pressure of reactive gas is used to control etching and growth of oxides on the silicon surface.
摘要翻译：提出了一种硅衬底快速热处理（RTP）的方法，其中使用非常低的反应气体分压来控制硅表面上的氧化物的蚀刻和生长。

2. 发明申请

US20100151694A1 METHOD AND APPARATUS FOR GROWING THIN OXIDE FILMS ON SILICON WHILE MINIMIZING IMPACT ON EXISTING STRUCTURES 有权
标题翻译：在最小化现有结构影响下生长硅氧化物薄膜的方法和装置
公开(公告)号：US20100151694A1
公开(公告)日：2010-06-17
申请号：US12334425
申请日：2008-12-12
申请人： Bruce W. Peuse , Yaozhi Hu , Paul Janis Timans , Guangcai Xing , Wilfried Lerch , Sing-Pin Tay , Stephen E. Savas , Georg Roters , Zsolt Nenyei , Ashok Sinha
发明人： Bruce W. Peuse , Yaozhi Hu , Paul Janis Timans , Guangcai Xing , Wilfried Lerch , Sing-Pin Tay , Stephen E. Savas , Georg Roters , Zsolt Nenyei , Ashok Sinha
IPC分类号： H01L21/316 , C23C16/00
CPC分类号： H01L21/31654 , H01L21/0223 , H01L21/02238 , H01L21/02323 , H01L21/0234 , H01L21/67115 , H01L21/67248 , H01L21/68771
摘要： Plasma assisted low temperature radical oxidation is described. The oxidation is selective to metals or metal oxides that may be present in addition to the silicon being oxidized. Selectivity is achieved by proper selection of process parameters, mainly the ratio of H2 to O2 gas. The process window may be enlarged by injecting H2O steam into the plasma, thereby enabling oxidation of silicon in the presence of TiN and W, at relatively low temperatures. Selective oxidation is improved by the use of an apparatus having remote plasma and flowing radicals onto the substrate, but blocking ions from reaching the substrate.
摘要翻译：描述了等离子体辅助低温自由基氧化。除了被氧化的硅之外，氧化对于可能存在的金属或金属氧化物是选择性的。选择性通过适当选择工艺参数来实现，主要是H2与O2气的比例。可以通过将H 2 O蒸汽注入到等离子体中来扩大工艺窗口，从而可以在相对低的温度下在TiN和W的存在下氧化硅。通过使用具有远离等离子体和流动基团的装置到衬底上但阻止离子到达衬底的装置来改善选择性氧化。

3. 发明授权

US08236706B2 Method and apparatus for growing thin oxide films on silicon while minimizing impact on existing structures 有权
标题翻译：用于在硅上生长薄氧化膜同时最小化对现有结构的影响的方法和装置
公开(公告)号：US08236706B2
公开(公告)日：2012-08-07
申请号：US12334425
申请日：2008-12-12
申请人： Bruce W. Peuse , Yaozhi Hu , Paul Janis Timans , Guangcai Xing , Wilfried Lerch , Sing-Pin Tay , Stephen E. Savas , Georg Roters , Zsolt Nenyei , Ashok Sinha
发明人： Bruce W. Peuse , Yaozhi Hu , Paul Janis Timans , Guangcai Xing , Wilfried Lerch , Sing-Pin Tay , Stephen E. Savas , Georg Roters , Zsolt Nenyei , Ashok Sinha
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/31654 , H01L21/0223 , H01L21/02238 , H01L21/02323 , H01L21/0234 , H01L21/67115 , H01L21/67248 , H01L21/68771
摘要： Plasma assisted low temperature radical oxidation is described. The oxidation is selective to metals or metal oxides that may be present in addition to the silicon being oxidized. Selectivity is achieved by proper selection of process parameters, mainly the ratio of H2 to O2 gas. The process window may be enlarged by injecting H2O steam into the plasma, thereby enabling oxidation of silicon in the presence of TiN and W, at relatively low temperatures. Selective oxidation is improved by the use of an apparatus having remote plasma and flowing radicals onto the substrate, but blocking ions from reaching the substrate.
摘要翻译：描述了等离子体辅助低温自由基氧化。除了被氧化的硅之外，氧化对于可能存在的金属或金属氧化物是选择性的。选择性通过适当选择工艺参数来实现，主要是H2与O2气的比例。可以通过将H 2 O蒸汽注入到等离子体中来扩大工艺窗口，从而可以在相对低的温度下在TiN和W的存在下氧化硅。通过使用具有远离等离子体和流动基团的装置到衬底上但阻止离子到达衬底的装置来改善选择性氧化。

4. 发明授权

US07977258B2 Method and system for thermally processing a plurality of wafer-shaped objects 有权
标题翻译：用于热处理多个晶片形物体的方法和系统
公开(公告)号：US07977258B2
公开(公告)日：2011-07-12
申请号：US11784503
申请日：2007-04-06
申请人： Zsolt Nenyei , Paul J. Timans , Wilfried Lerch , Jüergen Niess , Manfred Falter , Patrick Schmid , Conor Patrick O'Carroll , Rudy Cardema , Igor Fidelman , Sing-Pin Tay , Yao Zhi Hu , Daniel J. Devine
发明人： Zsolt Nenyei , Paul J. Timans , Wilfried Lerch , Jüergen Niess , Manfred Falter , Patrick Schmid , Conor Patrick O'Carroll , Rudy Cardema , Igor Fidelman , Sing-Pin Tay , Yao Zhi Hu , Daniel J. Devine
IPC分类号： H01L21/00 , F27B9/14
CPC分类号： H01L21/67115
摘要： Process and system for processing wafer-shaped objects, such as semiconductor wafers is disclosed. In accordance with the present disclosure, a multiple of two wafers are processed in a thermal processing chamber. The thermal processing chamber is in communication with at least one heating device for heating the wafers. The wafers are placed in the thermal processing chamber in a face-to-face configuration or in a back-to-back configuration.
摘要翻译：公开了用于处理诸如半导体晶片的晶片状物体的工艺和系统。根据本公开，在热处理室中处理两个晶片的倍数。热处理室与用于加热晶片的至少一个加热装置连通。将晶片以面对面配置或背对背配置放置在热处理室中。

5. 发明申请

US20080248657A1 Method and system for thermally processing a plurality of wafer-shaped objects 有权
标题翻译：用于热处理多个晶片形物体的方法和系统
公开(公告)号：US20080248657A1
公开(公告)日：2008-10-09
申请号：US11784503
申请日：2007-04-06
申请人： Zsolt Nenyei , Paul J. Timans , Wilfried Lerch , Juergen Niess , Manfred Falter , Patrick Schmid , Conor Patrick O'Carroll , Rudy Cardema , Igor Fidelman , Sing-Pin Tay , Yao Zhi Hu , Daniel J. Devine
发明人： Zsolt Nenyei , Paul J. Timans , Wilfried Lerch , Juergen Niess , Manfred Falter , Patrick Schmid , Conor Patrick O'Carroll , Rudy Cardema , Igor Fidelman , Sing-Pin Tay , Yao Zhi Hu , Daniel J. Devine
IPC分类号： H01L21/00
CPC分类号： H01L21/67115
摘要： Process and system for processing wafer-shaped objects, such as semiconductor wafers is disclosed. In accordance with the present disclosure, a multiple of two wafers are processed in a thermal processing chamber. The thermal processing chamber is in communication with at least one heating device for heating the wafers. The wafers are placed in the thermal processing chamber in a face-to-face configuration or in a back-to-back configuration.
摘要翻译：公开了用于处理诸如半导体晶片的晶片状物体的工艺和系统。根据本公开，在热处理室中处理两个晶片的倍数。热处理室与用于加热晶片的至少一个加热装置连通。将晶片以面对面配置或背对背配置放置在热处理室中。

6. 发明授权

US06830631B2 Method for the removing of adsorbed molecules from a chamber 有权
标题翻译：从室中去除吸附分子的方法
公开(公告)号：US06830631B2
公开(公告)日：2004-12-14
申请号：US10220001
申请日：2002-09-25
申请人： Zsolt Nenyei , Wilfried Lerch , Jürgen Niess , Thomas Graf
发明人： Zsolt Nenyei , Wilfried Lerch , Jürgen Niess , Thomas Graf
IPC分类号： B08B704
CPC分类号： C23C16/4408 , C23C14/564 , H01L21/67098 , Y10S134/902 , Y10S438/905 , Y10S438/906
摘要： A method of removing first molecules adsorbed on the surfaces of a chamber and/or at least one object found in the chamber is provided. Second, polar molecules that have a desorptive effect on the first molecules are introduced into the chamber. The second molecules comprise nitrogen and hydrogen, and especially NH3 molecules.
摘要翻译：提供了一种去除吸附在室的表面上的第一分子和/或在室中发现的至少一个物体的方法。第二，对第一分子具有解吸作用的极性分子被引入室中。第二分子包括氮和氢，特别是NH 3分子。

7. 发明授权

US5872889A Apparatus and method for rapid thermal processing 失效
标题翻译：快速热处理的装置和方法
公开(公告)号：US5872889A
公开(公告)日：1999-02-16
申请号：US778245
申请日：1997-01-08
申请人： Guenter Kaltenbrunner , Zsolt Nenyei , Helmut Sommer
发明人： Guenter Kaltenbrunner , Zsolt Nenyei , Helmut Sommer
IPC分类号： G01J5/00 , H01L21/00 , C23C16/00
CPC分类号： H01L21/67115 , G01J5/0003 , Y10T29/41
摘要： A closable enclosure for rapid thermal processing of semiconductor wafers is presented, wherein the closable enclosure has an enclosed volume less than 10 times the volume of the wafer, and wherein the closable enclosure may be closed about the wafer while the closable enclosure is surrounded by the process gas.
摘要翻译：提出了一种用于半导体晶片的快速热处理的可闭合的外壳，其中可封闭的外壳具有小于晶片体积的10倍的封闭容积，并且其中可封闭的外壳可围绕晶片封闭，而可封闭的外壳由工艺气体。

8. 发明授权

US5837555A Apparatus and method for rapid thermal processing 失效
标题翻译：快速热处理的装置和方法
公开(公告)号：US5837555A
公开(公告)日：1998-11-17
申请号：US631265
申请日：1996-04-12
申请人： Guenter Kaltenbrunner , Zsolt Nenyei , Helmut Sommer
发明人： Guenter Kaltenbrunner , Zsolt Nenyei , Helmut Sommer
IPC分类号： G01J5/00 , H01L21/00 , H01L21/324 , A21B2/00 , C23C16/00 , H01L21/477
CPC分类号： H01L21/67115 , G01J5/0003 , Y10T29/41
摘要： A closable enclosure for rapid thermal processing of semiconductor wafers is presented, wherein the closable enclosure has an enclosed volume less than 10 times the volume of the wafer, and wherein the closable enclosure may closed about the wafer while the closable enclosure is surrounded by the process gas.
摘要翻译：提出了一种用于半导体晶片的快速热处理的可闭合的外壳，其中可封闭的外壳具有小于晶片体积的10倍的封闭容积，并且其中可封闭的外壳可围绕晶片封闭，同时封闭的外壳被该工艺加油站。

9. 发明授权

US07704898B2 Method for the thermal treatment of disk-shaped substrates 有权
标题翻译：盘状基板的热处理方法
公开(公告)号：US07704898B2
公开(公告)日：2010-04-27
申请号：US11659587
申请日：2004-10-28
申请人： Zsolt Nenyei , Steffen Frigge , Patrick Schmid , Thorsten Hülsmann , Thomas Theiler
发明人： Zsolt Nenyei , Steffen Frigge , Patrick Schmid , Thorsten Hülsmann , Thomas Theiler
IPC分类号： H01L21/00
CPC分类号： H01L21/324 , F27B5/04 , F27B17/0025 , H01L21/67115
摘要： Disclosed is an apparatus and a method for reducing flash in an injection mold (532 or 542,543) which molds a molded article between a first mold surface and a second mold surface. The apparatus includes an active material actuator (530 or 533a and 533b or 561a and 561b) configured to, in response to application or removal of an electrical actuation signal thereto, change dimension and urge the first mold surface relative to the second mold surface to reduce flash therebetween. The apparatus also includes a transmission structure (533) configured to provide in use, the electrical actuation signal to said active material actuator (530 or 533a and 533b or 561a and 561b) includes a set of active material actuators stacked one against the other to provide a varying sealing force to urge the first mold surface relative to the second mold surface.
摘要翻译：公开了一种用于减少在第一模具表面和第二模具表面之间模制模制品的注模（532或542,543）中的闪光的装置和方法。该装置包括被配置为响应于施加或去除电致动信号而改变尺寸并且相对于第二模具表面推动第一模具表面以减少第一模具表面的活性材料致动器（530或533a和533b或561a和561b）闪烁。该设备还包括被配置为在使用中提供到所述活性材料致动器（530或533a和533b或561a和561b）的电致动信号的传输结构（533）包括一组彼此堆叠的活性材料致动器，以提供不同的密封力以相对于第二模具表面推动第一模具表面。

10. 发明授权

US07101812B2 Method of forming and/or modifying a dielectric film on a semiconductor surface 有权
标题翻译：在半导体表面上形成和/或修饰电介质膜的方法
公开(公告)号：US07101812B2
公开(公告)日：2006-09-05
申请号：US10386163
申请日：2003-03-10
申请人： Ignaz Eisele , Alexandra Ludsteck , Jörg Schulze , Zsolt Nenyei , Waltraud Dietl , Georg Roters
发明人： Ignaz Eisele , Alexandra Ludsteck , Jörg Schulze , Zsolt Nenyei , Waltraud Dietl , Georg Roters
IPC分类号： H01L21/44
CPC分类号： H01L21/0214 , H01L21/02167 , H01L21/0217 , H01L21/02227 , H01L21/02238 , H01L21/02247 , H01L21/02249 , H01L21/02255 , H01L21/02312 , H01L21/02326 , H01L21/02337 , H01L21/3144 , H01L21/31662
摘要： A process for forming and/or modifying dielectric films on semiconductor substrates is disclosed. According to the present invention, a semiconductor wafer is exposed to a process gas containing a reactive component. The temperature to which the semiconductor wafer is heated and the partial pressure of the reactive component are selected so that, sometime during the process, diffusion of the reactive components occurs through the dielectric film to the film/semiconductor substrate interface. Further, diffusion also occurs of semiconductor atoms through the dielectric film to an exterior surface of the film. The process of the present invention has been found well suited to forming and/or modifying very thin dielectric films, such as films having a thickness of less than 8 nm.
摘要翻译：公开了一种用于在半导体衬底上形成和/或修饰电介质膜的工艺。根据本发明，半导体晶片暴露于含有反应成分的工艺气体中。选择加热半导体晶片的温度和反应性组分的分压，使得在该过程的某个时间，反应组分的扩散通过电介质膜发生到膜/半导体衬底界面。此外，通过电介质膜的半导体原子也发生到膜的外表面的扩散。已经发现本发明的方法非常适合于形成和/或改性非常薄的电介质膜，例如厚度小于8nm的膜。

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