专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06717850B1 Efficient method to detect process induced defects in the gate stack of flash memory devices 失效
标题翻译：高效的方法来检测闪存器件的栅极堆叠中的工艺引起的缺陷
公开(公告)号：US06717850B1
公开(公告)日：2004-04-06
申请号：US10313676
申请日：2002-12-05
申请人： Jiang Li , Nian Yang , Zhigang Wang , John Jianshi Wang
发明人： Jiang Li , Nian Yang , Zhigang Wang , John Jianshi Wang
IPC分类号： G11C1604
CPC分类号： G11C29/50 , G11C16/04 , G11C2029/0403
摘要： A method of processing a semiconductor device is disclosed and comprises applying a relatively high voltage across a gate stack of a flash memory cell for a certain period of time. Then, the polarity of the applied voltage is reversed and is again applied across the gate stack for another certain period of time. The voltage applied is greater than a channel erase voltage utilized for the memory cell. This applied voltage causes extrinsic defects to become amplified at interfaces of oxide/insulator layers of the gate stack. Then, the memory cell is tested (e.g., via a battery of tests) in order to determine if the memory cell is defective. If the cell is defective (e.g., fails the test), it can be assumed that substantial extrinsic defects were present in the memory cell and have been amplified resulting in the test failure. If the cell passes the test, it can be assumed that the memory cell is substantially free from extrinsic defects. Defective memory cells/devices can be marked or otherwise indicated as being defective.
摘要翻译：公开了一种处理半导体器件的方法，并且包括在闪存单元的栅极堆叠上施加相当高的电压一段时间。然后，施加的电压的极性反转，并再次施加在栅极堆叠另外一段时间。施加的电压大于用于存储器单元的通道擦除电压。该施加的电压导致外部缺陷在栅极堆叠的氧化物/绝缘体层的界面处被放大。然后，测试存储器单元（例如，通过测试电池），以便确定存储器单元是否有故障。如果细胞有缺陷（例如，测试失败），则可以认为在存储单元中存在大量的外在缺陷并且被放大，导致测试失败。如果单元通过测试，则可以认为存储单元基本上没有外在缺陷。存储器单元/器件不良或可能被标记为有缺陷。

2. 发明授权

US06797650B1 Flash memory devices with oxynitride dielectric as the charge storage media 有权
标题翻译：具有氧氮化物介质的闪存器件作为电荷存储介质
公开(公告)号：US06797650B1
公开(公告)日：2004-09-28
申请号：US10342032
申请日：2003-01-14
申请人： Zhigang Wang , Nian Yang , John Jianshi Wang , Jiang Li
发明人： Zhigang Wang , Nian Yang , John Jianshi Wang , Jiang Li
IPC分类号： H01L2131
CPC分类号： H01L21/28202 , H01L21/28273 , H01L21/28282 , H01L21/3144 , H01L21/3145 , H01L29/513 , H01L29/518
摘要： One aspect of the invention relates to flash memory device that stores charge in a substantially stoichiometric silicon oxynitride dielectric. A stoichiometric silicon oxynitride dielectric can be represented by the formula (Si3N4)x(SiO2)(1-x), where x is from 0-1. A substantially stoichiometric silicon oxynitride dielectric has relatively few atoms that do not fit into the foregoing formula. The flash memory devices of the present invention have fewer defects and lower leakage than comparable SONOS-type flash memory devices. Another aspect of the invention relates to assessing the stoichiometry by FTIR, refractive index measurement, or a combination of the two.
摘要翻译：本发明的一个方面涉及将电荷存储在基本上化学计量的氮氧化硅电介质中的闪存器件。化学计量的氮氧化硅电介质可由式（Si 3 N 4）x（SiO 2）（1-x）表示，其中x为0-1。基本上化学计量的氮氧化硅电介质具有不符合上述公式的相对较少的原子。本发明的闪速存储器件具有比可比较的SONOS型闪存器件更少的缺陷和更低的泄漏。本发明的另一方面涉及通过FTIR，折射率测量或两者的组合来评估化学计量。

3. 发明授权

US06643185B1 Method for repairing over-erasure of fast bits on floating gate memory devices 有权
标题翻译：修复浮动栅极存储器件上快速位擦除的方法
公开(公告)号：US06643185B1
公开(公告)日：2003-11-04
申请号：US10215140
申请日：2002-08-07
申请人： Zhigang Wang , Nian Yang , Jiang Li
发明人： Zhigang Wang , Nian Yang , Jiang Li
IPC分类号： G11C1604
CPC分类号： G11C16/3404
摘要： A method for repairing over-erasure of floating gate memory devices. Specifically, one embodiment of the present invention discloses a method for performing a program disturb operation on an array of memory cells for repairing over-erasure of fast bits. The program disturb operation is applied simultaneously to the entire array making it compatible with channel erase schemes. The fast bits are programmed back to a normal state above 0 Volts by applying a substrate voltage to a substrate common to the array of memory cells. A gate voltage is applied to a plurality of word lines coupled to control gates of said array of memory cells. A program pulse time for applying voltages ranges from approximately 10 microseconds to 1 second. A voltage differential between a control gate and the substrate in a memory cell is in the range of approximately 9 Volts to about 20 Volts.
摘要翻译：一种用于修复浮动栅极存储器件的过度擦除的方法。具体地，本发明的一个实施例公开了一种用于对用于修复快速位的擦除的存储器单元阵列执行编程干扰操作的方法。编程干扰操作同时应用于整个阵列，使其与信道擦除方案兼容。通过将衬底电压施加到存储器单元阵列共用的衬底上，快速位被编程回0伏以上的正常状态。栅极电压被施加到耦合到所述存储器单元阵列的控制栅极的多个字线。用于施加电压的编程脉冲时间范围从大约10微秒到1秒。存储器单元中的控制栅极和衬底之间的电压差在大约9伏至大约20伏的范围内。

4. 发明授权

US08560756B2 Hybrid flash memory device 有权
标题翻译：混合闪存设备
公开(公告)号：US08560756B2
公开(公告)日：2013-10-15
申请号：US11873810
申请日：2007-10-17
申请人： Nian Yang , Jiang Li , Fan Wan Lai
发明人： Nian Yang , Jiang Li , Fan Wan Lai
IPC分类号： G06F12/00
CPC分类号： G06F12/0638 , G11C11/005 , G11C16/0408
摘要： A hybrid memory system is provided that combines the advantages of NAND flash memory devices with the advantages of NOR flashes memory devices. The system includes a NAND flash memory portion to provide mass storage and fast programming/erasure capabilities of conventional NAND flash memory devices. The system further comprises a NOR flash memory portion to provide code storage and fast random reading capabilities of conventional NOR flash memory devices. Accordingly, the hybrid memory system provides both mass storage and code storage along with fast programming/erasure speeds and fast random access speeds.
摘要翻译：提供了混合存储器系统，其结合NAND闪存器件的优点与NOR闪存存储器件的优点。该系统包括NAND闪速存储器部分，用于提供大容量存储和传统NAND闪速存储器件的快速编程/擦除能力。该系统还包括NOR闪速存储器部分，以提供常规NOR闪存器件的代码存储和快速随机读取能力。因此，混合存储器系统同时提供大容量存储和代码存储以及快速编程/擦除速度和快速随机存取速度。

5. 发明申请

US20090106481A1 HYBRID FLASH MEMORY DEVICE 有权
标题翻译：混合闪存存储器件
公开(公告)号：US20090106481A1
公开(公告)日：2009-04-23
申请号：US11873810
申请日：2007-10-17
申请人： Nian Yang , Jiang Li , Fan Wan Lai
发明人： Nian Yang , Jiang Li , Fan Wan Lai
IPC分类号： G06F12/00
CPC分类号： G06F12/0638 , G11C11/005 , G11C16/0408
摘要： A hybrid memory system is provided that combines the advantages of NAND flash memory devices with the advantages of NOR flashes memory devices. The system includes a NAND flash memory portion to provide mass storage and fast programming/erasure capabilities of conventional NAND flash memory devices. The system further comprises a NOR flash memory portion to provide code storage and fast random reading capabilities of conventional NOR flash memory devices. Accordingly, the hybrid memory system provides both mass storage and code storage. along with fast programming/erasure speeds and fast random access speeds.
摘要翻译：提供了混合存储器系统，其结合NAND闪存器件的优点与NOR闪存存储器件的优点。该系统包括NAND闪速存储器部分，用于提供大容量存储和传统NAND闪速存储器件的快速编程/擦除能力。该系统还包括NOR闪速存储器部分，以提供常规NOR闪存器件的代码存储和快速随机读取能力。因此，混合存储器系统提供大容量存储和代码存储。以及快速的编程/擦除速度和快速的随机存取速度。

6. 发明授权

US10171892B2 System and method for monitoring water level on a roof 有权
公开(公告)号：US10171892B2
公开(公告)日：2019-01-01
申请号：US15347409
申请日：2016-11-09
申请人： John Petrachek , Xuewen Zhu , Jiang Li , Jianbin Xiao
发明人： John Petrachek , Xuewen Zhu , Jiang Li , Jianbin Xiao
IPC分类号： H04Q9/00 , G01F23/30 , H04L29/08 , E04D5/14 , E04D13/00 , G01K1/02 , G01K1/14 , G08B21/18 , G08B17/06
摘要： A drain monitor, a system, and a method monitor water level on a roof. The drain monitor includes a base for attaching to the roof, a riser attached to the base and projecting from the roof, a water level sensor attached to the riser for measuring water level on the roof, and a communication system positioned on the riser for transmitting measurement data received from the water level sensor.

7. 发明授权

US10081754B2 Gel compositions for hydraulic fracturing applications 有权
$Gel compositions for hydraulic fracturing applications$
公开(公告)号：US10081754B2
公开(公告)日：2018-09-25
申请号：US14770668
申请日：2014-02-28
申请人： Kemira Oyj , Jiang Li , Roopa Tellakula
发明人： Jiang Li , Roopa Tellakula
IPC分类号： C09K8/66 , C09K8/12 , C09K8/68 , C09K8/80 , C09K8/88
CPC分类号： C09K8/12 , C09K8/685 , C09K8/805 , C09K8/88 , C09K8/887 , C09K2208/12 , C09K2208/28 , C09K2208/32
摘要： Gel compositions comprising an acrylamide polymer or copolymer crosslinked with dialdehyde, methods to produce the gel compositions, wellbore treatment fluids comprising the gel compositions, and methods of treating a well bore comprising injecting the gel compositions, are provided. In the drilling, completion, and stimulation of oil and gas wells, well treatment fluids are often pumped into well bore holes under high pressure and at high flow rates causing the rock formation surrounding the well bore to fracture.

8. 发明申请

US20160024375A1 Friction Reducing Polymers 审中-公开
标题翻译：摩擦减少聚合物
公开(公告)号：US20160024375A1
公开(公告)日：2016-01-28
申请号：US14774438
申请日：2014-03-18
申请人： Jiang LI , Ronald SON , Philip WATSON , Logan JACKSON , Kemira Oyj
发明人： Jiang Li , Ronald Robinson , Philip Watson , Logan Jackson
IPC分类号： C09K8/68 , E21B43/20 , E21B43/26
CPC分类号： C09K8/68 , C08F8/12 , C08F2810/50 , C09K8/035 , C09K2208/28 , C09K2208/34 , E21B43/20 , E21B43/26 , C08F220/56 , C08F218/08 , C08F220/06 , C08F216/06
摘要： Described herein are friction reducing polymers comprising two or more recurring units wherein at least one recurring unit is an acrylic acid or acrylamide monomer and at least one recurring unit is a vinyl monomer selected from a vinyl alcohol, a vinyl ester, and a vinyl ether.
摘要翻译：本文描述的是包含两个或多个重复单元的减摩聚合物，其中至少一个重复单元是丙烯酸或丙烯酰胺单体，并且至少一个重复单元是选自乙烯醇，乙烯基酯和乙烯基醚的乙烯基单体。

9. 发明授权

US09160794B2 Network address translators (NAT) type detection techniques 有权
标题翻译：网络地址转换器（NAT）类型检测技术
公开(公告)号：US09160794B2
公开(公告)日：2015-10-13
申请号：US12328296
申请日：2008-12-04
申请人： Qingwei Lin , Jiang Li , Jian-guang Lou , Yusuo Hu , Fan Li
发明人： Qingwei Lin , Jiang Li , Jian-guang Lou , Yusuo Hu , Fan Li
IPC分类号： G06F15/16 , H04L29/08 , H04L12/26 , H04L29/12 , H04L12/24 , H04L29/06
CPC分类号： H04L67/104 , H04L29/12339 , H04L41/12 , H04L43/50 , H04L61/2503 , H04L69/28
摘要： Techniques described herein enable peers to determine each peer's NAT type much more efficiently and quickly than when compared with existing techniques. To do so, a peer simultaneously sends multiple test messages to a server. The peer then waits to either receive a response for each of the multiple test messages or may store an indication that no response has been received after a predetermined timeout period. The peer then analyzes the received responses and/or the stored timeout indications to determine the peer's NAT type or to determine that the peer is operating free from concealment by a NAT/firewall device. By simultaneously sending the multiple test messages, the peer may determine the NAT type within a maximum time defined by the predetermined timeout period or a roundtrip time period that is required for communication between the peer and the server. As such, the tools allow for efficient NAT-type detection.
摘要翻译：本文描述的技术使得对等体能够比与现有技术相比更有效和快速地确定每个对等体的NAT类型。为此，对等体同时向服务器发送多个测试消息。然后，对等体等待接收多个测试消息中的每一个的响应，或者可以存储在预定的超时时段之后没有接收到响应的指示。对等体然后分析接收到的响应和/或存储的超时指示以确定对等体的NAT类型或者确定对等体正在从NAT /防火墙设备的隐藏中运行。通过同时发送多个测试消息，对等体可以在由对等体和服务器之间的通信所需的预定超时时间段或往返时间周期限定的最大时间内确定NAT类型。因此，这些工具允许有效的NAT类型检测。

10. 发明授权

US09054482B1 Laser diode stack assembly and method of manufacturing 有权
标题翻译：激光二极管组件及其制造方法
公开(公告)号：US09054482B1
公开(公告)日：2015-06-09
申请号：US14271709
申请日：2014-05-07
申请人： Jiang Li
发明人： Jiang Li
IPC分类号： H01S3/04 , H01S5/022 , H01S5/024 , H01S5/40 , H01L23/36 , H01L21/48 , H01L23/367 , H01L27/15
CPC分类号： H01L21/4871 , H01L23/36 , H01L23/3672 , H01L23/3677 , H01L27/156 , H01L2924/0002 , H01S3/04 , H01S3/0405 , H01S5/02264 , H01S5/02272 , H01S5/024 , H01S5/02476 , H01S5/4025 , H01S5/405 , H01L2924/00
摘要： A laser diode sub-assembly includes a plurality of laser diode bars, electrically conductive spacers and electrically insulative heat spreaders. The spacers and laser diode bars are arranged by alternating to affix each other via the solder preforms and aligned on the front surfaces, while the back surfaces of the spacers affix the top metalized surfaces of the heat spreaders via the same type of solder preforms. Specially designed fixtures can hold all the components in positions and go through the reflowing. The subassembly can be formed by one heating step. The laser diode stack can be formed by soldering the bottom metalized surfaces of the heat spreaders, via a lower melting temperature solder preform, to a heat sink.
摘要翻译：激光二极管子组件包括多个激光二极管条，导电间隔物和电绝缘散热器。间隔物和激光二极管条通过交替地经由焊料预成型件彼此贴合并且在前表面上对准地布置，而间隔件的后表面通过相同类型的焊料预制件固定散热器的顶部金属化表面。特殊设计的夹具可以将所有部件保持在位置并通过回流。子组件可以通过一个加热步骤形成。激光二极管堆叠可以通过将散热器的底部金属化表面通过较低熔点的焊料预制件焊接到散热器来形成。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式