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1. 发明申请

US20050009288A1 Process for producing semiconductor article using graded epitaxial growth 审中-公开
标题翻译：使用分级外延生长制造半导体产品的方法
公开(公告)号：US20050009288A1
公开(公告)日：2005-01-13
申请号：US10802186
申请日：2004-03-17
申请人： Zhi-Yuan Cheng , Eugene Fitzgerald , Dimitri Antoniadis , Judy Hoyt
发明人： Zhi-Yuan Cheng , Eugene Fitzgerald , Dimitri Antoniadis , Judy Hoyt
IPC分类号： H01L21/205 , H01L21/02 , H01L21/20 , H01L21/762 , H01L27/12 , H01L21/00 , C30B1/00 , H01L21/46 , H01L21/84
CPC分类号： H01L21/76254 , H01L21/02381 , H01L21/0245 , H01L21/02502 , H01L21/0251 , H01L21/02521 , H01L21/02532 , H01L21/02546 , Y10S438/933
摘要： A process for producing monocrystalline semiconductor layers. In an exemplary embodiment, a graded Si1-xGex (x increases from 0 to y) is deposited on a first silicon substrate, followed by deposition of a relaxed Si1-yGey layer, a thin strained Si1-zGez layer and another relaxed Si1-yGey layer. Hydrogen ions are then introduced into the strained SizGez layer. The relaxed Si1-yGey layer is bonded to a second oxidized substrate. An annealing treatment splits the bonded pair at the strained Si layer, such that the second relaxed Si1-yGey layer remains on the second substrate. In another exemplary embodiment, a graded SixGex is deposited on a first silicon substrate, where the Ge concentration x is increased from 0 to 1. Then a relaxed GaAs layer is deposited on the relaxed Ge buffer. As the lattice constant of GaAs is close to that of Ge, GaAs has high quality with limited dislocation defects. Hydrogen ions are introduced into the relaxed GaAs layer at the selected depth. The relaxed GaAs layer is bonded to a second oxidized substrate. An annealing treatment splits the bonded pair at the hydrogen ion rich layer, such that the upper portion of relaxed GaAs layer remains on the second substrate.
摘要翻译：一种制造单晶半导体层的方法。在示例性实施例中，分级的Si1-xGex（x从0增加到y）沉积在第一硅衬底上，随后沉积弛豫的Si1-yGey层，薄的应变Si1-zGez层和另一个弛豫的Si1-yGey 层。然后将氢离子引入应变SizGez层。松弛的Si1-yGey层与第二氧化基底结合。退火处理在接合的Si层处分离结合对，使得第二弛豫Si1-yGey层保留在第二基板上。在另一个示例性实施例中，分级的SixGex沉积在第一硅衬底上，其中Ge浓度x从0增加到1.然后在弛豫的Ge缓冲器上沉积弛豫的GaAs层。由于GaAs的晶格常数接近于Ge，所以GaAs具有高质量和有限的位错缺陷。在所选择的深度处将氢离子引入到松弛的GaAs层中。松弛的GaAs层结合到第二氧化衬底上。退火处理在氢离子富集层处分离结合对，使得松弛的GaAs层的上部保留在第二基板上。

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