专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08535972B2 Methods for coating a substrate with an amphiphilic compound 有权
公开(公告)号：US08535972B2
公开(公告)日：2013-09-17
申请号：US12172110
申请日：2008-07-11
申请人： Zachary M. Fresco , Chi-I Lang , Jinhong Tong , Anh Duong , Nitin Kumar , Anna Tsimelzon , Tony Chiang
发明人： Zachary M. Fresco , Chi-I Lang , Jinhong Tong , Anh Duong , Nitin Kumar , Anna Tsimelzon , Tony Chiang
IPC分类号： H01L51/40
CPC分类号： H01L23/5329 , C09D129/04 , H01L21/02063 , H01L21/02074 , H01L21/3105 , H01L21/31058 , H01L21/76814 , H01L21/7682 , H01L21/76826 , H01L21/76829 , H01L2221/1063 , H01L2924/0002 , H01L2924/00
摘要： Methods of modifying a patterned semiconductor substrate are presented including: providing a patterned semiconductor substrate surface including a dielectric region and a conductive region; and applying an amphiphilic surface modifier to the dielectric region to modify the dielectric region. In some embodiments, modifying the dielectric region includes modifying a wetting angle of the dielectric region. In some embodiments, modifying the wetting angle includes making a surface of the dielectric region hydrophilic. In some embodiments, methods further include applying an aqueous solution to the patterned semiconductor substrate surface. In some embodiments, the conductive region is selectively enhanced by the aqueous solution. In some embodiments, methods further include providing the dielectric region formed of a low-k dielectric material. In some embodiments, applying the amphiphilic surface modifier modifies an interaction of the low-k dielectric region with a subsequent process.

2. 发明申请

US20090014846A1 Methods for coating a substrate with an amphiphilic compound 有权
标题翻译：用两亲性化合物涂覆底物的方法
公开(公告)号：US20090014846A1
公开(公告)日：2009-01-15
申请号：US12172110
申请日：2008-07-11
申请人： Zachary M. Fresco , Chi-I Lang , Jinhong Tong , Anh Duong , Nitin Kumar , Anna Tsimelzon , Tony Chiang
发明人： Zachary M. Fresco , Chi-I Lang , Jinhong Tong , Anh Duong , Nitin Kumar , Anna Tsimelzon , Tony Chiang
IPC分类号： H01L21/312 , H01L29/51
CPC分类号： H01L23/5329 , C09D129/04 , H01L21/02063 , H01L21/02074 , H01L21/3105 , H01L21/31058 , H01L21/76814 , H01L21/7682 , H01L21/76826 , H01L21/76829 , H01L2221/1063 , H01L2924/0002 , H01L2924/00
摘要： Methods of modifying a patterned semiconductor substrate are presented including: providing a patterned semiconductor substrate surface including a dielectric region and a conductive region; and applying an amphiphilic surface modifier to the dielectric region to modify the dielectric region. In some embodiments, modifying the dielectric region includes modifying a wetting angle of the dielectric region. In some embodiments, modifying the wetting angle includes making a surface of the dielectric region hydrophilic. In some embodiments, methods further include applying an aqueous solution to the patterned semiconductor substrate surface. In some embodiments, the conductive region is selectively enhanced by the aqueous solution. In some embodiments, methods further include providing the dielectric region formed of a low-k dielectric material. In some embodiments, applying the amphiphilic surface modifier modifies an interaction of the low-k dielectric region with a subsequent process.
摘要翻译：提出了修改图案化半导体衬底的方法，包括：提供包括电介质区域和导电区域的图案化半导体衬底表面; 以及将两亲表面改性剂施加到所述电介质区域以改变所述电介质区域。在一些实施例中，修改电介质区域包括改变电介质区域的润湿角度。在一些实施例中，改变润湿角度包括使介电区域的表面成为亲水性。在一些实施方案中，方法还包括将水溶液施加到图案化的半导体衬底表面。在一些实施例中，导电区域被水溶液选择性地增强。在一些实施例中，方法还包括提供由低k电介质材料形成的电介质区域。在一些实施方案中，施加两亲表面改性剂修饰低k电介质区域与随后工艺的相互作用。

3. 发明申请

US20070166989A1 Substrate processing including a masking layer 有权
标题翻译：衬底处理包括掩模层
公开(公告)号：US20070166989A1
公开(公告)日：2007-07-19
申请号：US11647882
申请日：2006-12-29
申请人： Zachary Fresco , Chi-I Lang , Sandra Malhotra , Tony Chiang , Thomas Boussie , Nitin Kumar , Jinhong Tong , Anh Duong
发明人： Zachary Fresco , Chi-I Lang , Sandra Malhotra , Tony Chiang , Thomas Boussie , Nitin Kumar , Jinhong Tong , Anh Duong
IPC分类号： H01L21/44 , H01L21/4763 , H01L21/31
CPC分类号： H01L21/288 , B82Y30/00 , H01L21/3105 , H01L21/31058 , H01L21/76834 , H01L21/76849 , H01L21/7685
摘要： Methods for substrate processing are described. The methods include forming a material layer on a substrate. The methods include selecting constituents of a molecular masking layer (MML) to remove an effect of variations in the material layer as a result of substrate processing. The methods include normalizing the surface characteristics of the material layer by selectively depositing the MML on the material layer.
摘要翻译：描述基板处理方法。所述方法包括在基底上形成材料层。所述方法包括选择分子屏蔽层（MML）的成分以消除作为衬底处理的结果的材料层中的变化的影响。所述方法包括通过在材料层上选择性地沉积MML来使材料层的表面特性归一化。

4. 发明授权

US08426970B2 Substrate processing including a masking layer 有权
公开(公告)号：US08426970B2
公开(公告)日：2013-04-23
申请号：US12979627
申请日：2010-12-28
申请人： Zachary Fresco , Chi-I Lang , Sandra G. Malhotra , Tony P. Chiang , Thomas R. Boussie , Nitin Kumar , Jinhong Tong , Anh Duong
发明人： Zachary Fresco , Chi-I Lang , Sandra G. Malhotra , Tony P. Chiang , Thomas R. Boussie , Nitin Kumar , Jinhong Tong , Anh Duong
IPC分类号： H01L23/52 , H01L23/532
CPC分类号： H01L21/288 , B82Y30/00 , H01L21/3105 , H01L21/31058 , H01L21/76834 , H01L21/76849 , H01L21/7685
摘要： Methods for substrate processing are described. The methods include forming a material layer on a substrate. The methods include selecting constituents of a molecular masking layer (MML) to remove an effect of variations in the material layer as a result of substrate processing. The methods include normalizing the surface characteristics of the material layer by selectively depositing the MML on the material layer.

5. 发明授权

US07879710B2 Substrate processing including a masking layer 有权
标题翻译：衬底处理包括掩模层
公开(公告)号：US07879710B2
公开(公告)日：2011-02-01
申请号：US11647882
申请日：2006-12-29
申请人： Zachary Fresco , Chi-I Lang , Sandra G. Malhotra , Tony P. Chiang , Thomas R. Boussie , Nitin Kumar , Jinhong Tong , Anh Duong
发明人： Zachary Fresco , Chi-I Lang , Sandra G. Malhotra , Tony P. Chiang , Thomas R. Boussie , Nitin Kumar , Jinhong Tong , Anh Duong
IPC分类号： H01L21/44
CPC分类号： H01L21/288 , B82Y30/00 , H01L21/3105 , H01L21/31058 , H01L21/76834 , H01L21/76849 , H01L21/7685
摘要： Methods for substrate processing are described. The methods include forming a material layer on a substrate. The methods include selecting constituents of a molecular masking layer (MML) to remove an effect of variations in the material layer as a result of substrate processing. The methods include normalizing the surface characteristics of the material layer by selectively depositing the MML on the material layer.
摘要翻译：描述基板处理方法。所述方法包括在基底上形成材料层。所述方法包括选择分子屏蔽层（MML）的成分以消除作为衬底处理的结果的材料层中的变化的影响。所述方法包括通过在材料层上选择性地沉积MML来使材料层的表面特性归一化。

6. 发明申请

US20120001320A1 SUBSTRATE PROCESSING INCLUDING A MASKING LAYER 有权
标题翻译：基板处理包括掩蔽层
公开(公告)号：US20120001320A1
公开(公告)日：2012-01-05
申请号：US12979627
申请日：2010-12-28
申请人： Zachary Fresco , Chi-I Lang , Sandra G. Malhotra , Tony P. Chiang , Thomas R. Boussie , Nitin Kumar , Jinhong Tong , Anh Duong
发明人： Zachary Fresco , Chi-I Lang , Sandra G. Malhotra , Tony P. Chiang , Thomas R. Boussie , Nitin Kumar , Jinhong Tong , Anh Duong
IPC分类号： H01L23/48
CPC分类号： H01L21/288 , B82Y30/00 , H01L21/3105 , H01L21/31058 , H01L21/76834 , H01L21/76849 , H01L21/7685
摘要： Methods for substrate processing are described. The methods include forming a material layer on a substrate. The methods include selecting constituents of a molecular masking layer (MML) to remove an effect of variations in the material layer as a result of substrate processing. The methods include normalizing the surface characteristics of the material layer by selectively depositing the MML on the material layer.
摘要翻译：描述基板处理方法。所述方法包括在基底上形成材料层。所述方法包括选择分子屏蔽层（MML）的成分以消除作为衬底处理的结果的材料层中的变化的影响。所述方法包括通过在材料层上选择性地沉积MML来使材料层的表面特性归一化。

7. 发明授权

US07884036B1 Methods for treating substrates in preparation for subsequent processes 有权
标题翻译：处理底物的方法用于后续方法的制备
公开(公告)号：US07884036B1
公开(公告)日：2011-02-08
申请号：US11777152
申请日：2007-07-12
申请人： Jinhong Tong , Anh Duong , Zhi-Wen Sun , Chi-I Lang , Sandra Malhotra , Tony Chiang
发明人： Jinhong Tong , Anh Duong , Zhi-Wen Sun , Chi-I Lang , Sandra Malhotra , Tony Chiang
IPC分类号： H01L21/00
CPC分类号： H01L21/3105 , H01L21/02063 , H01L21/76814 , H01L21/76825 , H01L21/76826 , H01L21/76849
摘要： Methods for treating a substrate in preparation for a subsequent process are presented, the method including: receiving the substrate, the substrate comprising conductive regions and dielectric regions; and applying an oxidizing agent to the substrate in a manner so that the dielectric regions are oxidized to become increasingly hydrophilic to enable access to the conductive regions in the subsequent process, wherein the dielectric region is treated to a depth in the range of approximately 1 to 5 atomic layers. In some embodiments, methods further include processing the substrate, wherein processing the conductive regions are selectively enhanced. In some embodiments, the oxidizing agent includes atmospheric pressure plasma and UV radiation.
摘要翻译：呈现用于处理衬底以用于后续工艺的方法，所述方法包括：接收衬底，所述衬底包括导电区域和电介质区域; 以及以使得电介质区域被氧化以变得越来越亲水的方式将氧化剂施加到衬底上，以便能够在随后的工艺中进入导电区域，其中将电介质区域处理到大约1至 5个原子层。在一些实施例中，方法还包括处理衬底，其中选择性地增强对导电区域的处理。在一些实施方案中，氧化剂包括大气压等离子体和UV辐射。

8. 发明授权

US07704789B2 Methods for forming resistive switching memory elements 有权
标题翻译：形成电阻式开关存储元件的方法
公开(公告)号：US07704789B2
公开(公告)日：2010-04-27
申请号：US11702967
申请日：2007-02-05
申请人： Zhi-wen Sun , Nitin Kumar , Jinhong Tong , Chi-I Lang , Tony Chiang
发明人： Zhi-wen Sun , Nitin Kumar , Jinhong Tong , Chi-I Lang , Tony Chiang
IPC分类号： H01L21/00
CPC分类号： H01L45/04 , H01L27/2409 , H01L27/2463 , H01L45/1233 , H01L45/146 , H01L45/1633
摘要： Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.
摘要翻译：提供电阻式开关存储器元件，其可以包含由无电金属形成的化学金属电极和金属氧化物。电阻式开关存储器元件可以表现出双稳态，并且可以用于高密度多层存储器集成电路中。诸如镍基材料的无电导电材料可以选择性地沉积在硅晶片或其它合适的衬底上的导体上。无电导电材料可以被氧化以形成用于电阻式开关存储元件的金属氧化物。可以沉积多层导电材料，每层具有不同的氧化速率。可以利用导电层的差异氧化速率来确保在制造期间形成所需厚度的金属氧化物层。

9. 发明授权

US08344375B2 Nonvolatile memory elements with metal deficient resistive switching metal oxides 有权
标题翻译：具有金属缺陷电阻开关金属氧化物的非易失性存储元件
公开(公告)号：US08344375B2
公开(公告)日：2013-01-01
申请号：US13312061
申请日：2011-12-06
申请人： Nitin Kumar , Tony Chiang , Chi-I Lang , Prashant B Phatak , Jinhong Tong
发明人： Nitin Kumar , Tony Chiang , Chi-I Lang , Prashant B Phatak , Jinhong Tong
IPC分类号： H01L29/12 , H01L29/02
CPC分类号： G11C13/0007 , G11C2213/32 , G11C2213/52 , G11C2213/72 , G11C2213/73 , H01L27/2463 , H01L45/04 , H01L45/1233 , H01L45/1253 , H01L45/146 , H01L45/1608
摘要： Nonvolatile memory elements are provided that have resistive switching metal oxides. The nonvolatile memory elements may be formed by depositing a metal-containing material on a silicon-containing material. The metal-containing material may be oxidized to form a resistive-switching metal oxide. The silicon in the silicon-containing material reacts with the metal in the metal-containing material when heat is applied. This forms a metal silicide lower electrode for the nonvolatile memory element. An upper electrode may be deposited on top of the metal oxide. Because the silicon in the silicon-containing layer reacts with some of the metal in the metal-containing layer, the resistive-switching metal oxide that is formed is metal deficient when compared to a stoichiometric metal oxide formed from the same metal.
摘要翻译：提供具有电阻开关金属氧化物的非易失性存储元件。非易失性存储元件可以通过将含金属的材料沉积在含硅材料上而形成。含金属材料可以被氧化以形成电阻式开关金属氧化物。当施加热量时，含硅材料中的硅与含金属材料中的金属反应。这形成用于非易失性存储元件的金属硅化物下电极。上部电极可以沉积在金属氧化物的顶部。由于含硅层中的硅与含金属层中的一些金属反应，与由相同金属形成的化学计量的金属氧化物相比，形成的电阻 - 开关金属氧化物是金属缺陷的。

10. 发明申请

US20120074376A1 NONVOLATILE MEMORY ELEMENTS WITH METAL DEFICIENT RESISTIVE SWITCHING METAL OXIDES 有权
标题翻译：金属不良电阻开关金属氧化物的非易失性存储元件
公开(公告)号：US20120074376A1
公开(公告)日：2012-03-29
申请号：US13312061
申请日：2011-12-06
申请人： Nitin Kumar , Jinhong Tong , Chi-I Lang , Tony Chiang , Prashant B. Phatak
发明人： Nitin Kumar , Jinhong Tong , Chi-I Lang , Tony Chiang , Prashant B. Phatak
IPC分类号： H01L47/00
CPC分类号： G11C13/0007 , G11C2213/32 , G11C2213/52 , G11C2213/72 , G11C2213/73 , H01L27/2463 , H01L45/04 , H01L45/1233 , H01L45/1253 , H01L45/146 , H01L45/1608
摘要： Nonvolatile memory elements are provided that have resistive switching metal oxides. The nonvolatile memory elements may be formed by depositing a metal-containing material on a silicon-containing material. The metal-containing material may be oxidized to form a resistive-switching metal oxide. The silicon in the silicon-containing material reacts with the metal in the metal-containing material when heat is applied. This forms a metal silicide lower electrode for the nonvolatile memory element. An upper electrode may be deposited on top of the metal oxide. Because the silicon in the silicon-containing layer reacts with some of the metal in the metal-containing layer, the resistive-switching metal oxide that is formed is metal deficient when compared to a stoichiometric metal oxide formed from the same metal.
摘要翻译：提供具有电阻开关金属氧化物的非易失性存储元件。非易失性存储元件可以通过将含金属的材料沉积在含硅材料上而形成。含金属材料可以被氧化以形成电阻式开关金属氧化物。当施加热量时，含硅材料中的硅与含金属材料中的金属反应。这形成用于非易失性存储元件的金属硅化物下电极。上部电极可以沉积在金属氧化物的顶部。由于含硅层中的硅与含金属层中的一些金属反应，与由相同金属形成的化学计量的金属氧化物相比，形成的电阻 - 开关金属氧化物是金属缺陷的。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式