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    • 2. 发明授权
    • Methods for forming resistive switching memory elements
    • 形成电阻式开关存储元件的方法
    • US07704789B2
    • 2010-04-27
    • US11702967
    • 2007-02-05
    • Zhi-wen SunNitin KumarJinhong TongChi-I LangTony Chiang
    • Zhi-wen SunNitin KumarJinhong TongChi-I LangTony Chiang
    • H01L21/00
    • H01L45/04H01L27/2409H01L27/2463H01L45/1233H01L45/146H01L45/1633
    • Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.
    • 提供电阻式开关存储器元件,其可以包含由无电金属形成的化学金属电极和金属氧化物。 电阻式开关存储器元件可以表现出双稳态,并且可以用于高密度多层存储器集成电路中。 诸如镍基材料的无电导电材料可以选择性地沉积在硅晶片或其它合适的衬底上的导体上。 无电导电材料可以被氧化以形成用于电阻式开关存储元件的金属氧化物。 可以沉积多层导电材料,每层具有不同的氧化速率。 可以利用导电层的差异氧化速率来确保在制造期间形成所需厚度的金属氧化物层。