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    • 1. 发明授权
    • Method for manufacturing semiconductor device
    • 制造半导体器件的方法
    • US08053253B2
    • 2011-11-08
    • US12473320
    • 2009-05-28
    • Yuugo GotoTeruyuki Fujii
    • Yuugo GotoTeruyuki Fujii
    • H01L21/00
    • H01L21/6835H01L21/561H01L21/568H01L23/552H01L23/60H01L23/66H01L2223/6677H01L2924/0002H01L2924/12044H01L2924/19043H01L2924/30105H01L2924/3025H01L2924/00
    • An object is to provide a highly reliable semiconductor device that has tolerance to external stress and electrostatic discharge. Another object is to prevent defective shapes and defective characteristics due to the external stress or an electrostatic discharge in the manufacturing process, and to manufacture a semiconductor device with high yield. Still another object is to manufacture a semiconductor device at low cost and with high productivity. With the use of a conductive shield covering a semiconductor integrated circuit, electrostatic breakdown due to electrostatic discharge of the semiconductor integrated circuit is prevented. The conductive shield is formed so that at least the conductive shields on the top and bottom surfaces are electrically connected by a plating method. In addition, a semiconductor device can be formed at low cost with high productivity because a plating method is used for the formation of the conductive shield.
    • 目的是提供一种高度可靠的对外部应力和静电放电具有耐受性的半导体器件。 另一个目的是防止在制造过程中由于外部应力或静电放电引起的形状不良和缺陷特性,并且以高产率制造半导体器件。 另一个目的是以低成本和高生产率制造半导体器件。 通过使用覆盖半导体集成电路的导电屏蔽,可以防止由于半导体集成电路的静电放电引起的静电击穿。 导电屏蔽形成为使得至少顶表面和底表面上的导电屏蔽通过电镀方法电连接。 此外,由于使用电镀方法来形成导电屏蔽,所以可以以低成本高生产率形成半导体器件。
    • 2. 发明授权
    • Method for manufacturing semiconductor device
    • 制造半导体器件的方法
    • US08420409B2
    • 2013-04-16
    • US13288207
    • 2011-11-03
    • Yuugo GotoTeruyuki Fujii
    • Yuugo GotoTeruyuki Fujii
    • H01L21/00
    • H01L21/6835H01L21/561H01L21/568H01L23/552H01L23/60H01L23/66H01L2223/6677H01L2924/0002H01L2924/12044H01L2924/19043H01L2924/30105H01L2924/3025H01L2924/00
    • An object is to provide a highly reliable semiconductor device that has tolerance to external stress and electrostatic discharge. Another object is to prevent defective shapes and defective characteristics due to the external stress or an electrostatic discharge in the manufacturing process, and to manufacture a semiconductor device with high yield. Still another object is to manufacture a semiconductor device at low cost and with high productivity. With the use of a conductive shield, electrostatic breakdown (malfunctions of the circuit or damages of a semiconductor element) due to electrostatic discharge of the semiconductor integrated circuit is prevented. The conductive shield is formed so that at least the conductive shields on the top and bottom surfaces are electrically connected by a plating method. In addition, a semiconductor device can be formed at low cost with high productivity because a plating method is used for the formation of the conductive shield.
    • 目的是提供一种高度可靠的对外部应力和静电放电具有耐受性的半导体器件。 另一个目的是防止在制造过程中由于外部应力或静电放电引起的形状不良和缺陷特性,并且以高产率制造半导体器件。 另一个目的是以低成本和高生产率制造半导体器件。 通过使用导电屏蔽,防止由于半导体集成电路的静电放电而导致的静电击穿(电路的故障或半导体元件的损坏)。 导电屏蔽形成为使得至少顶表面和底表面上的导电屏蔽通过电镀方法电连接。 此外,由于使用电镀方法来形成导电屏蔽,所以可以以低成本高生产率形成半导体器件。