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1. 发明授权

US07923796B2 Semiconductor device including resonance circuit 有权
标题翻译：包括谐振电路的半导体装置
公开(公告)号：US07923796B2
公开(公告)日：2011-04-12
申请号：US11440030
申请日：2006-05-25
申请人： Yutaka Shionoiri , Tomoaki Atsumi , Hiroki Inoue
发明人： Yutaka Shionoiri , Tomoaki Atsumi , Hiroki Inoue
IPC分类号： H01L27/14 , G08B13/14
CPC分类号： G06K19/07749 , G06K19/0723
摘要： It is an object of the present invention to provide a semiconductor device in which an arrangement area of capacitance can be reduced and resonance frequency can be easily adjusted. The semiconductor device includes an antenna and a resonance circuit including a capacitor connected to the antenna in parallel where the capacitor is formed by connecting x pieces of first capacitor (x is an arbitrary natural number), y pieces of second capacitor (y is an arbitrary natural number), and z pieces of third capacitor (z is an arbitrary natural number) in parallel; and the first capacitor, the second capacitor, and the third capacitor have different capacitance values from each other. It is preferable that each of the first capacitor, the second capacitor, and the third capacitor be a MIS capacitor. Further, at least one of the first capacitor, the second capacitor, and the third capacitor is preferably formed by connecting a plurality of capacitors in parallel.
摘要翻译：本发明的目的是提供一种半导体器件，其中可以减小电容的布置面积并且可以容易地调节谐振频率。半导体器件包括天线和谐振电路，其包括并联连接到天线的电容器，其中通过连接x个第一电容器（x是任意自然数）形成电容器，y个第二电容器（y是任意的）自然数）和z个第三电容器（z是任意自然数）; 并且第一电容器，第二电容器和第三电容器具有彼此不同的电容值。优选地，第一电容器，第二电容器和第三电容器中的每一个都是MIS电容器。此外，优选通过并联连接多个电容器来形成第一电容器，第二电容器和第三电容器中的至少一个。

2. 发明申请

US20060267771A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20060267771A1
公开(公告)日：2006-11-30
申请号：US11440030
申请日：2006-05-25
申请人： Yutaka Shionoiri , Tomoaki Atsumi , Hiroki Inoue
发明人： Yutaka Shionoiri , Tomoaki Atsumi , Hiroki Inoue
IPC分类号： G08B13/14
CPC分类号： G06K19/07749 , G06K19/0723
摘要： It is an object of the present invention to provide a semiconductor device in which an arrangement area of capacitance can be reduced and resonance frequency can be easily adjusted. The semiconductor device includes an antenna and a resonance circuit including a capacitor connected to the antenna in parallel where the capacitor is formed by connecting x pieces of first capacitor (x is an arbitrary natural number), y pieces of second capacitor (y is an arbitrary natural number), and z pieces of third capacitor (z is an arbitrary natural number) in parallel; and the first capacitor, the second capacitor, and the third capacitor have different capacitance values from each other. It is preferable that each of the first capacitor, the second capacitor, and the third capacitor be a MIS capacitor. Further, at least one of the first capacitor, the second capacitor, and the third capacitor is preferably formed by connecting a plurality of capacitors in parallel.
摘要翻译：本发明的目的是提供一种半导体器件，其中可以减小电容的布置面积并且可以容易地调节谐振频率。半导体器件包括天线和谐振电路，其包括并联连接到天线的电容器，其中通过连接x个第一电容器（x是任意自然数）形成电容器，y个第二电容器（y是任意的）自然数）和z个第三电容器（z是任意自然数）; 并且第一电容器，第二电容器和第三电容器具有彼此不同的电容值。优选地，第一电容器，第二电容器和第三电容器中的每一个都是MIS电容器。此外，优选通过并联连接多个电容器来形成第一电容器，第二电容器和第三电容器中的至少一个。

3. 发明授权

US08558238B2 Semiconductor device and method for manufacturing semiconductor device 有权
标题翻译：半导体装置及半导体装置的制造方法
公开(公告)号：US08558238B2
公开(公告)日：2013-10-15
申请号：US11802458
申请日：2007-05-23
申请人： Tomoaki Atsumi , Hiroki Inoue
发明人： Tomoaki Atsumi , Hiroki Inoue
IPC分类号： H01L29/10
CPC分类号： H01L21/02683 , H01L21/02532 , H01L21/2026 , H01L27/1255 , H01L27/1285 , H01L27/1296 , H01L28/40
摘要： In a semiconductor device including a digital circuit portion and an analog circuit portion having a capacitor portion provided over a substrate, the capacitor portion is provided with a first wiring, a second wiring and a plurality of blocks each having a plurality of capacitor elements. Further, each the plurality of capacitor elements provided in each block has a semiconductor film having a first impurity region and a plurality of second impurity regions provided apart with the first impurity region interposed therebetween, and a conductive film provided over the first impurity region with an insulating film therebetween. A capacitor is formed from the first impurity region, the insulating film, and the conductive film.
摘要翻译：在包括数字电路部分和具有设置在衬底上的电容器部分的模拟电路部分的半导体器件中，电容器部分设置有第一布线，第二布线和多个具有多个电容器元件的块。此外，设置在每个块中的多个电容器元件中的每一个具有半导体膜，该半导体膜具有第一杂质区和设置有分隔开第一杂质区的多个第二杂质区，并且在第一杂质区上设置有导电膜，绝缘膜。由第一杂质区，绝缘膜和导电膜形成电容器。

4. 发明申请

US20070290207A1 Semiconductor device and method for manufacturing semiconductor device 有权
标题翻译：半导体装置及半导体装置的制造方法
公开(公告)号：US20070290207A1
公开(公告)日：2007-12-20
申请号：US11802458
申请日：2007-05-23
申请人： Tomoaki Atsumi , Hiroki Inoue
发明人： Tomoaki Atsumi , Hiroki Inoue
IPC分类号： H01L29/94 , H01L21/20
CPC分类号： H01L21/02683 , H01L21/02532 , H01L21/2026 , H01L27/1255 , H01L27/1285 , H01L27/1296 , H01L28/40
摘要： In a semiconductor device including a digital circuit portion and an analog circuit portion having a capacitor portion provided over a substrate, the capacitor portion is provided with a first wiring, a second wiring and a plurality of blocks each having a plurality of capacitor elements. Further, each the plurality of capacitor elements provided in each block has a semiconductor film having a first impurity region and a plurality of second impurity regions provided apart with the first impurity region interposed therebetween, and a conductive film provided over the first impurity region with an insulating film therebetween. A capacitor is formed from the first impurity region, the insulating film, and the conductive film.
摘要翻译：在包括数字电路部分和具有设置在基板上的电容器部分的模拟电路部分的半导体器件中，电容器部分设置有第一布线，第二布线和多个具有多个电容器元件的块。此外，设置在每个块中的多个电容器元件中的每一个具有半导体膜，该半导体膜具有第一杂质区和设置有分隔开第一杂质区的多个第二杂质区，并且在第一杂质区上设置有导电膜，绝缘膜。由第一杂质区，绝缘膜和导电膜形成电容器。

5. 发明授权

US08871970B2 Process for producing organolithium compound and process for producing substituted aromatic compound 有权
标题翻译：制备有机锂化合物的方法和制备取代的芳族化合物的方法
公开(公告)号：US08871970B2
公开(公告)日：2014-10-28
申请号：US12998715
申请日：2009-12-25
申请人： Hiroki Inoue
发明人： Hiroki Inoue
IPC分类号： C07F5/02 , C07C217/08 , C07F1/02
CPC分类号： C07C217/08 , C07C211/14 , C07F1/02 , C07F5/025
摘要： A method for producing an organolithium compound includes the step of reacting an aromatic compound or a halogenated unsaturated aliphatic compound and a lithiating agent in the presence of a coordinating compound containing three or more elements having a coordinating ability in a molecule, at least one thereof being a nitrogen element, or a coordinating compound containing three or more oxygen elements having a coordinating ability in a molecule, at least one of the groups containing the oxygen elements having a coordinating ability being a tertiary alkoxy group, at a temperature of −40° C. to 40° C.
摘要翻译：有机锂化合物的制造方法包括使芳香族化合物或卤化不饱和脂肪族化合物与锂化剂在含有分子中具有配位能力的三种以上的配位化合物的存在下反应的工序，其中至少一个为氮元素或含有三个或更多个在分子中具有配位能力的氧元素的配位化合物，至少一个含有具有叔烷氧基的配位能力的氧元素的基团在-40℃的温度下至40℃

6. 发明申请

US20140118278A1 Information Management Apparatus and Storage Medium Storing Information Management Program 有权
标题翻译：信息管理设备和存储介质存储信息管理程序
公开(公告)号：US20140118278A1
公开(公告)日：2014-05-01
申请号：US14063089
申请日：2013-10-25
申请人： Hiroki Inoue
发明人： Hiroki Inoue
IPC分类号： G06F3/0488
CPC分类号： G06F3/04883 , G06F3/03545 , G06F3/041
摘要： An information management apparatus includes a processor, and a memory configured to store computer-readable instructions. The instructions instruct the information management apparatus to execute steps including acquiring stroke data of a trajectory of an approaching writing device detected by a detection portion capable of detecting the trajectory and including data of the trajectory of the writing device corresponding to schedule information written on a paper medium, generating image data of the trajectory based on the acquired stroke data, generating text data based on the acquired stroke data, and registering and managing the schedule information identified from the text data and the image data.
摘要翻译：信息管理装置包括处理器和被配置为存储计算机可读指令的存储器。所述指示指示所述信息管理装置执行包括获取能够检测所述轨迹的检测部检测到的接近写入装置的轨迹的笔迹数据的步骤，并且包括与写在纸张上的时间表信息对应的写入装置的轨迹的数据基于所获取的笔画数据生成轨迹的图像数据，基于所获取的笔画数据生成文本数据，以及登记和管理从文本数据和图像数据识别的日程信息。

7. 发明授权

US08587286B2 Regulator circuit and RFID tag including the same in wireless communication to improve noise margin 有权
标题翻译：调节器电路和RFID标签在无线通信中包括相同，以提高噪声容限
公开(公告)号：US08587286B2
公开(公告)日：2013-11-19
申请号：US12686579
申请日：2010-01-13
申请人： Hiroki Inoue , Kiyoshi Kato , Shuhei Nagatsuka , Koichiro Kamata , Tsutomu Murakawa , Takahiro Tuji , Kaori Ikada
发明人： Hiroki Inoue , Kiyoshi Kato , Shuhei Nagatsuka , Koichiro Kamata , Tsutomu Murakawa , Takahiro Tuji , Kaori Ikada
IPC分类号： G05F3/16 , G05F1/00
CPC分类号： G05F3/16 , G05F1/56 , G05F3/242
摘要： One object of the present invention is to provide a regulator circuit with an improved noise margin. In a regulator circuit including a bias circuit generating a reference voltage on the basis of the potential difference between a first power supply terminal and a second power supply terminal, and a voltage regulator outputting a potential to an output terminal on the basis of a reference potential input from the bias circuit, a bypass capacitor is provided between a power supply terminal and a node to which a gate of a transistor included in the bias circuit is connected.
摘要翻译：本发明的一个目的是提供一种具有改善的噪声容限的调节器电路。在包括基于第一电源端子和第二电源端子之间的电位差产生参考电压的偏置电路的调节器电路中，以及基于参考电位向输出端子输出电位的电压调节器在偏置电路的输入端，在电源端子与偏置电路中包含的晶体管的栅极连接的节点之间设置有旁路电容器。

8. 发明授权

US08563973B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08563973B2
公开(公告)日：2013-10-22
申请号：US13041581
申请日：2011-03-07
申请人： Hiroki Inoue , Takanori Matsuzaki , Shuhei Nagatsuka
发明人： Hiroki Inoue , Takanori Matsuzaki , Shuhei Nagatsuka
IPC分类号： H01L29/786
CPC分类号： H01L27/11521 , G11C16/0408 , H01L27/11551 , H01L27/1156 , H01L27/1207 , H01L27/1225 , H01L28/60
摘要： A semiconductor device including a nonvolatile memory cell including a writing transistor which includes an oxide semiconductor, a reading transistor which includes a semiconductor material different from that of the writing transistor, and a capacitor is provided. Data is written to the memory cell by turning on the writing transistor and supplying a potential to a node where a source electrode (or a drain electrode) of the writing transistor, one electrode of the capacitor, and a gate electrode of the reading transistor are electrically connected to each other, and then turning off the writing transistor so that a predetermined amount of charge is held at the node. Further, when a p-channel transistor is used as the reading transistor, a reading potential is a positive potential.
摘要翻译：提供一种半导体器件，其包括包括具有氧化物半导体的写入晶体管的非易失性存储单元，包括与写入晶体管不同的半导体材料的读取晶体管和电容器。通过接通写入晶体管并将电位提供给写入晶体管的源极（或电极），电容器的一个电极和读取晶体管的栅电极的节点，将数据写入存储单元彼此电连接，然后关闭写入晶体管，使得在节点处保持预定量的电荷。此外，当使用p沟道晶体管作为读取晶体管时，读取电位为正电位。

9. 发明授权

US08502292B2 Semiconductor device with memory cells 有权
标题翻译：具有存储单元的半导体器件
公开(公告)号：US08502292B2
公开(公告)日：2013-08-06
申请号：US13182488
申请日：2011-07-14
申请人： Kiyoshi Kato , Takanori Matsuzaki , Shuhei Nagatsuka , Hiroki Inoue
发明人： Kiyoshi Kato , Takanori Matsuzaki , Shuhei Nagatsuka , Hiroki Inoue
IPC分类号： H01L27/108 , H01L29/94
CPC分类号： H01L27/11517 , G11C16/0433 , G11C16/26 , H01L27/1156 , H01L29/78
摘要： A semiconductor device with a novel structure is provided, which can hold stored data even when no power is supplied and which has no limitations on the number of writing operations. A semiconductor device is formed using a material which enables off-state current of a transistor to be reduced significantly; e.g., an oxide semiconductor material which is a wide-gap semiconductor. With use of a semiconductor material which enables off-state current of a transistor to be reduced significantly, the semiconductor device can hold data for a long period. In a semiconductor device with a memory cell array, parasitic capacitances generated in the nodes of the first to the m-th memory cells connected in series are substantially equal, whereby the semiconductor device can operate stably.
摘要翻译：提供具有新颖结构的半导体器件，其即使在没有供电的情况下也可以保存存储的数据，并且对写入操作的数量没有限制。使用能够显着降低晶体管的截止电流的材料形成半导体器件; 例如，作为宽间隙半导体的氧化物半导体材料。通过使用能够显着降低晶体管的截止电流的半导体材料，半导体器件可以长期保存数据。在具有存储单元阵列的半导体器件中，在串联连接的第一至第m存储器单元的节点中产生的寄生电容基本相等，由此半导体器件可以稳定地工作。

10. 发明授权

US08488394B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08488394B2
公开(公告)日：2013-07-16
申请号：US13197839
申请日：2011-08-04
申请人： Shuhei Nagatsuka , Takanori Matsuzaki , Hiroki Inoue , Kiyoshi Kato
发明人： Shuhei Nagatsuka , Takanori Matsuzaki , Hiroki Inoue , Kiyoshi Kato
IPC分类号： G11C7/00
CPC分类号： G11C7/00 , G11C11/403 , G11C11/4087 , H01L27/11517 , H01L27/1156 , H01L27/1207 , H01L27/1225
摘要： An object is to provide a semiconductor device with a novel structure, which can hold stored data even when power is not supplied and which has an unlimited number of write cycles. The semiconductor device is formed using a memory cell including a wide band gap semiconductor such as an oxide semiconductor. The semiconductor device includes a potential change circuit having a function of outputting a potential lower than a reference potential for reading data from the memory cell. When the wide band gap semiconductor which allows a sufficient reduction in off-state current of a transistor included in the memory cell is used, a semiconductor device which can hold data for a long period can be provided.
摘要翻译：目的是提供具有新颖结构的半导体器件，其即使在不提供电力且具有无限数量的写周期的情况下也可以保存存储的数据。使用包括诸如氧化物半导体的宽带隙半导体的存储单元形成半导体器件。半导体器件包括具有输出低于用于从存储单元读取数据的参考电位的电位的功能的电位变化电路。当使用允许充分降低包含在存储单元中的晶体管的截止电流的宽带隙半导体时，可以提供能够长期保存数据的半导体器件。

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