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1. 发明授权

US4969031A Semiconductor devices and method for making the same 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US4969031A
公开(公告)日：1990-11-06
申请号：US463608
申请日：1983-02-03
申请人： Yutaka Kobayashi , Takaya Suzuki
发明人： Yutaka Kobayashi , Takaya Suzuki
IPC分类号： H01L29/78 , H01L21/268 , H01L21/322 , H01L21/324 , H01L21/331 , H01L29/04 , H01L29/10 , H01L29/167 , H01L29/32 , H01L29/73 , H01L29/786
CPC分类号： H01L29/7842 , H01L21/268 , H01L21/3221 , H01L21/324 , H01L29/045 , H01L29/1054 , H01L29/167 , H01L29/32 , H01L29/78657
摘要： A semiconductor device has an active layer in which a semiconductor element is formed by employing a silicon single crystal as a substrate. The present invention causes a tensile strain to remain in the active layer, thereby to improve the carrier mobility.
摘要翻译：半导体器件具有通过采用硅单晶作为衬底形成半导体元件的有源层。本发明使活性层中存在拉伸应变，从而提高载流子迁移率。

2. 发明授权

US4604159A Method of forming a large number of monocrystalline semiconductor regions on the surface of an insulator 失效
标题翻译：在绝缘体表面上形成大量单晶半导体区域的方法
公开(公告)号：US4604159A
公开(公告)日：1986-08-05
申请号：US620023
申请日：1984-06-13
申请人： Yutaka Kobayashi , Akira Fukami , Takaya Suzuki
发明人： Yutaka Kobayashi , Akira Fukami , Takaya Suzuki
IPC分类号： H01L27/00 , H01L21/20 , H01L21/768 , H01L21/86 , C30B13/20
CPC分类号： H01L21/76888 , H01L21/0242 , H01L21/02532 , H01L21/02587 , H01L21/02667 , H01L21/86 , Y10S117/90 , Y10S148/003 , Y10S148/05 , Y10S148/071 , Y10S148/074 , Y10S148/152
摘要： Disclosed is a method of forming a large number of monocrystalline silicon regions, of uniform orientation, on the surface of an insulator material. Initially, a large number of island regions of amorphous or polycrystalline silicon, thermally connected to one another in a predetermined direction by connecting regions, are provided. Then such island regions are sequentially melted and regrown in such predetermined direction so as to form the monocrystalline semiconductor regions, with such regions having a uniform orientation. Thereafter, such connecting regions can be removed in order to isolate the island regions. The connecting regions can be formed with gaps, whereby such connecting regions need not be removed. The connecting regions can be formed of materials having a higher heat conductivity than that of the material of the island regions, and/or the connecting regions can have a smaller cross-sectional area at right angles to the predetermined direction than that of the island regions. Such island regions can be utilized for forming semiconductor elements, such as MOS FETs, therein.
摘要翻译：公开了在绝缘体材料的表面上形成均匀取向的大量单晶硅区域的方法。首先，提供大量通过连接区域沿预定方向彼此热连接的非晶或多晶硅岛区域。然后将这样的岛状区域顺序地熔融并以这样的预定方向重新生长，从而形成单晶半导体区域，这些区域具有均匀的取向。此后，可以去除这样的连接区域以便隔离岛区域。连接区域可以形成间隙，由此不需要去除这样的连接区域。连接区域可以由具有比岛区域的材料的导热性高的材料形成，和/或连接区域可以具有比预定方向成直角的横截面积小于岛状区域。这样的岛状区域可用于在其中形成诸如MOS FET的半导体元件。

3. 发明授权

US4693758A Method of making devices in silicon, on insulator regrown by laser beam 失效
标题翻译：在硅中制造器件的方法，在绝缘体上由激光束重新生长
公开(公告)号：US4693758A
公开(公告)日：1987-09-15
申请号：US784033
申请日：1985-10-04
申请人： Yutaka Kobayashi , Takaya Suzuki
发明人： Yutaka Kobayashi , Takaya Suzuki
IPC分类号： H01L29/78 , H01L21/20 , H01L21/205 , H01L21/26 , H01L21/268 , H01L21/428 , H01L21/86 , H01L27/12 , H01L29/786 , H01L21/263 , H01L21/225
CPC分类号： H01L27/12 , H01L21/0242 , H01L21/02433 , H01L21/0245 , H01L21/02516 , H01L21/02532 , H01L21/02576 , H01L21/0262 , H01L21/02686 , H01L21/268 , H01L29/78657 , Y10S117/904 , Y10S438/967
摘要： This invention relates to improvements in the SOS technology including the so-called laser annealing processing. According to this invention, a semiconductor layer of an SOS structure consists of the three layers of an interface layer made up of twins, a seed crystalline layer and a re-grown layer far thicker than the preceding two layers when viewed from the side of an insulating substrate. The re-grown layer is formed in such a way that a semiconductor layer deposited on the insulating substrate is irradiated with an electromagnetic wave, for example, pulsed ruby laser beam, which is absorbed substantially uniformly by a portion except the interface layer and the seed crystalline layer. According to this invention, the quality of the re-grown layer is improved, and the mobility of carriers is enhanced. As a result, the operating speed of a semiconductor device employing the SOS structure is raised, and the leakage current is reduced.
摘要翻译：本发明涉及SOS技术的改进，包括所谓的激光退火处理。根据本发明，SOS结构的半导体层由三层由双胞胎组成的界面层，晶种层和再生长层组成，当从绝缘基板。再生长层以这样的方式形成，使得沉积在绝缘基板上的半导体层被电磁波照射，例如脉冲红宝石激光束，其被除了界面层和种子之外的部分基本均匀地吸收晶体层。根据本发明，再生层的质量得到改善，并且载体的迁移率增强。结果，使用SOS结构的半导体器件的工作速度提高，并且泄漏电流降低。

4. 发明授权

US08787956B2 Timing adjustment method, user equipment, base station, and mobile communication system 有权
标题翻译：定时调整方法，用户设备，基站和移动通信系统
公开(公告)号：US08787956B2
公开(公告)日：2014-07-22
申请号：US12957478
申请日：2010-12-01
申请人： Yoshiaki Ohta , Yoshiharu Tajima , Yutaka Kobayashi , Kazuhisa Obuchi
发明人： Yoshiaki Ohta , Yoshiharu Tajima , Yutaka Kobayashi , Kazuhisa Obuchi
IPC分类号： H04B7/00 , H04W56/00 , H04W76/02 , H04W72/04
CPC分类号： H04W72/0413 , H04W56/0045 , H04W72/044 , H04W76/10
摘要： In response to receiving second transmission timing adjustment information during connection processing while the user equipment is performing the connection processing to the base station based on first transmission timing adjustment information, the first transmission timing adjustment information is applied to transmission timing adjustment for transmission processing until a valid term of the first transmission timing adjustment information; and the second transmission timing adjustment information is applied to transmission timing adjustment for transmission processing after the valid term of the first transmission timing adjustment information.
摘要翻译：响应于在用户设备基于第一发送定时调整信息向基站执行连接处理期间在连接处理期间接收到第二发送定时调整信息，将第一发送定时调整信息应用于发送处理的发送定时调整，直到第一传输定时调整信息的有效期; 并且第二发送定时调整信息被应用于在第一发送定时调整信息的有效期之后的发送处理的发送定时调整。

5. 发明授权

US08241214B2 Ultrasonic imaging apparatus and method for ultrasonic imaging 有权
标题翻译：超声波成像设备及超声波成像方法
公开(公告)号：US08241214B2
公开(公告)日：2012-08-14
申请号：US11213875
申请日：2005-08-30
申请人： Yutaka Kobayashi , Takanobu Uchibori , Taketoshi Nagai , Koichi Sato
发明人： Yutaka Kobayashi , Takanobu Uchibori , Taketoshi Nagai , Koichi Sato
IPC分类号： A61B8/00 , A61B8/14 , G06K9/00
CPC分类号： A61B8/463 , A61B5/044 , G06F19/00
摘要： A ultrasonic imaging apparatus comprises an ultrasonic probe including a plurality of ultrasonic transducers which perform ultrasonic transmission and reception to an object, a transceiver unit configured to obtain an ultrasonic signal from the object by driving the plurality of ultrasonic transducers, an ultrasonic data generation unit configured to generate ultrasonic data based on the ultrasonic signal, a time information generation unit configured to generate time information related to the ultrasonic transmission or reception and a time information addition unit configured to add the time information in a part of pixel data of the ultrasonic data in order to synchronize the Image data with biomedical signal, such as ECG.
摘要翻译：一种超声波成像装置，包括：超声波探头，其包括对物体进行超声波发送和接收的多个超声波换能器;被配置为通过驱动所述多个超声波换能器从所述物体获得超声波信号的收发器单元;配置基于所述超声波信号生成超声波数据;时间信息生成部，被配置为生成与所述超声波发送接收相关的时刻信息;以及时间信息添加部，将所述超声波数据的像素数据的一部分中的时间信息添加到以使图像数据与生物医学信号（如ECG）同步。

6. 发明申请

US20120203111A1 ULTRASONIC DIAGNOSTIC APPARATUS, ULTRASONIC IMAGE PROCESSING APPARATUS, AND ULTRASONIC IMAGE ACQUISITION METHOD 审中-公开
标题翻译：超声波诊断设备，超声波图像处理设备和超声波图像采集方法
公开(公告)号：US20120203111A1
公开(公告)日：2012-08-09
申请号：US13365670
申请日：2012-02-03
申请人： Satoshi MATSUNAGA , Kazuya Akaki , Masaru Ogasawara , Yutaka Kobayashi , Takayuki Gunji
发明人： Satoshi MATSUNAGA , Kazuya Akaki , Masaru Ogasawara , Yutaka Kobayashi , Takayuki Gunji
IPC分类号： A61B8/06
CPC分类号： A61B8/06 , A61B8/463
摘要： According to one embodiment, an ultrasonic diagnostic apparatus includes a detection unit configured to detect a distribution of velocity information at each position in a predetermined area in an object over a predetermined interval by scanning the predetermined area with an ultrasonic wave, a calculation unit configured to calculate at least one feature amount based on at least one of a maximum flow velocity value, a minimum flow velocity value, and a mean flow velocity value at the each position in the predetermined interval by using velocity information at each position over the predetermined interval, and a display unit configured to display the feature amount in a predetermined form.
摘要翻译：根据一个实施例，超声波诊断装置包括：检测单元，被配置为通过用超声波扫描预定区域来在预定间隔中检测对象中的预定区域中的每个位置处的速度信息的分布;计算单元，被配置为通过使用预定间隔中的每个位置处的速度信息，基于预定间隔中的每个位置处的最大流速值，最小流速值和平均流速值中的至少一个来计算至少一个特征量，以及被配置为以预定形式显示特征量的显示单元。

7. 发明申请

US20120202391A1 MULTI-CONTACT TERMINAL FITTING 有权
标题翻译：多接头端子接头
公开(公告)号：US20120202391A1
公开(公告)日：2012-08-09
申请号：US13357084
申请日：2012-01-24
申请人： Yutaka Kobayashi , Hikaru Ito
发明人： Yutaka Kobayashi , Hikaru Ito
IPC分类号： H01R9/24
CPC分类号： H01R13/113 , H01R43/16
摘要： A multi-contact terminal fitting (T) has a plurality of resilient contact pieces (40) that extend from a rectangular tubular base (25) and can be brought into contact with an outer peripheral surface of a flat plate-shaped tab (11). The resilient contact pieces (40) extending from parts of the base (25) that have relatively high rigidity are narrow and those extending from less rigid parts of the base (25) are wider.
摘要翻译：多接触端子接头（T）具有从矩形管状基座（25）延伸的多个弹性接触件（40），并可与平板状接头（11）的外周面接触，。从具有较高刚性的基部（25）的部分延伸的弹性接触片（40）较窄，并且从基部（25）的较刚性部分延伸的弹性接触片较宽。

8. 发明申请

US20110010517A1 ELECTRONIC DEVICE, PASSWORD DELETION METHOD, AND PROGRAM 失效
标题翻译：电子设备，密码删除方法和程序
公开(公告)号：US20110010517A1
公开(公告)日：2011-01-13
申请号：US12921099
申请日：2008-12-09
申请人： Kazuya Fujimura , Osamu Uchida , Yutaka Kobayashi
发明人： Kazuya Fujimura , Osamu Uchida , Yutaka Kobayashi
IPC分类号： G06F12/14 , G06F12/00
CPC分类号： G06F21/78
摘要： An electronic device that can automatically unlock an external storage device with a password without adding a function to the external storage device is provided. An electronic device 100B has memory card connection means 108 for connecting a memory card 200 that can be locked with a password, password holding means 101 for holding card unique ID and a password, card unique ID acquisition means 104 for acquiring connection identification information indicating the card unique ID of the memory card 20 connected to the memory card connection means 108, and password deletion means 109 for deleting connection identification information and the password corresponding to the connection identification information stored in the password holding means 101 if the connection identification information is contained in the password holding means 101.
摘要翻译：提供了一种能够通过密码自动解锁外部存储设备而不向外部存储设备添加功能的电子设备。电子设备100B具有存储卡连接装置108，用于连接可与密码锁定的存储卡200，用于保存卡唯一ID的密码保持装置101和密码;卡唯一ID获取装置104，用于获取指示连接到存储卡连接装置108的存储卡20的卡唯一ID，以及如果包含连接识别信息，则密码删除装置109用于删除连接识别信息和与存储在密码保存装置101中的连接识别信息相对应的密码在密码保持装置101中。

9. 发明申请

US20100313263A1 ELECTRONIC DEVICE, PASSWORD CONTROL METHOD, AND PROGRAM 有权
标题翻译：电子设备，密码控制方法和程序
公开(公告)号：US20100313263A1
公开(公告)日：2010-12-09
申请号：US12675255
申请日：2007-09-05
申请人： Osamu Uchida , Kazuya Fujimura , Yutaka Kobayashi
发明人： Osamu Uchida , Kazuya Fujimura , Yutaka Kobayashi
IPC分类号： G06F7/04
CPC分类号： G06F21/79
摘要： There is provided an electronic device capable of safely obtaining password information even when a password of an external storage device of any type is forgotten. An electronic device 100 includes an external memory card connection unit 108 connecting a memory card 200 capable of being locked by a card password, a password retention unit 101 retaining the password information including the card password, a device password retention unit 112 retaining a device password of the electronic device 100, an input unit 102 for inputting data, a device setting cancellation unit 111 determining whether or not the device password inputted by the input unit 102 and the device password retained in the device password retention unit 112 match with each other, and a control unit 109 outputting the password information or changing the card password of the external storage device set in the external storage device when the device passwords match with each other as a result of the determination.
摘要翻译：提供了即使当忘记了任何类型的外部存储装置的密码时能够安全地获得密码信息的电子装置。电子设备100包括连接能够被卡密码锁定的存储卡200的外部存储卡连接单元108，保存包括卡密码的密码信息的密码保持单元101，保存设备密码的设备密码保留单元112 电子设备100的输入单元102，用于输入数据的输入单元102，确定输入单元102输入的设备密码和设备密码保留单元112中保存的设备密码是否匹配的设备设置取消单元111，以及控制单元109，作为确定的结果，当设备密码彼此匹配时，输出密码信息或改变设置在外部存储设备中的外部存储设备的卡密码。

10. 发明申请

US20100146865A1 POLYCRYSTALLINE DIAMOND 审中-公开
标题翻译：多晶金刚石
公开(公告)号：US20100146865A1
公开(公告)日：2010-06-17
申请号：US12600618
申请日：2009-02-05
申请人： Takeshi Sato , Katsuko Yamamoto , Naohiro Toda , Hitoshi Sumiya , Yutaka Kobayashi
发明人： Takeshi Sato , Katsuko Yamamoto , Naohiro Toda , Hitoshi Sumiya , Yutaka Kobayashi
IPC分类号： C01B31/06 , B05B1/02 , B24B7/00 , B24B5/00 , B05B1/00
CPC分类号： C01B32/25 , B26F3/004 , B82Y30/00 , C03B33/107 , C04B35/528 , C04B35/645 , C04B2235/425 , C04B2235/5427 , C04B2235/5436 , C04B2235/5445 , C04B2235/5454 , C04B2235/5481 , C04B2235/72 , C04B2235/781 , C04B2235/785 , Y10T428/218 , Y10T428/268
摘要： An object is to provide polycrystalline diamond applicable to diverse applications; and a water jet orifice, a stylus for gravure printing, a scriber, a diamond cutting tool, and a scribing wheel that include such polycrystalline diamond. This object is achieved by polycrystalline diamond obtained by converting and sintering non-diamond carbon under an ultrahigh pressure and at a high temperature without addition of a sintering aid or a catalyst, wherein sintered diamond grains constituting the polycrystalline diamond have an average grain diameter of more than 50 nm and less than 2500 nm and a purity of 99% or more, and the diamond has a D90 grain diameter of (average grain diameter+average grain diameter×0.9) or less.
摘要翻译：目的是提供适用于多种应用的多晶金刚石; 以及喷水孔，用于凹版印刷的触笔，划线器，金刚石切割工具和包括这种多晶金刚石的划线轮。该目的是通过在超高压和高温下转化和烧结非金刚石碳而获得的多晶金刚石，而不添加烧结助剂或催化剂，其中构成多晶金刚石的烧结金刚石晶粒的平均晶粒直径更多金刚石的D90粒径（平均粒径+平均粒径×0.9）以下，优选为50nm以上且小于2500nm，纯度为99％以上。

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