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1. 发明授权

US5063294A Converged ion beam apparatus 失效
标题翻译：转换光束装置
公开(公告)号：US5063294A
公开(公告)日：1991-11-05
申请号：US524432
申请日：1990-05-17
申请人： Yutaka Kawata , Ken-ichi Inoue , Kiyotaka Ishibashi , Akira Kobayashi , Koji Inoue , Norio Suzuki , Akio Arai , Kaneo Yamada , Keizo Tokushige , Hirofumi Fukuyama , Shigeto Adachi , Yukito Furukawa , Sunao Takahashi , Makoto Kimura
发明人： Yutaka Kawata , Ken-ichi Inoue , Kiyotaka Ishibashi , Akira Kobayashi , Koji Inoue , Norio Suzuki , Akio Arai , Kaneo Yamada , Keizo Tokushige , Hirofumi Fukuyama , Shigeto Adachi , Yukito Furukawa , Sunao Takahashi , Makoto Kimura
IPC分类号： G01Q90/00 , H01J37/09 , H01J37/256
CPC分类号： H01J37/09 , H01J37/256
摘要： A converged ion beam apparatus wherein a very small beam spot can be formed with a high energy ion beam after passing a reduced route in which a type of the ion beam is classified. The device is incorporated in an apparatus wherein an ion beam from an accelerator is introduced in a spot to a specimen by way of an ion type classifying device, an objective collimator and a beam collector to perform reforming of a surface or an analysis of physical properties and/or composition or the like of a small area of the specimen. The objective collimator is disposed just on the downstream of the accelerator, and an analyzing component for analyzing an ion type and energy of a beam is interposed in a drift space in an object distance between the objective collimator and a quadruple pole magnetic lens. Several components of the apparatus are also improved including the quadruple pole magnetic lens, an objective slit device and a specimen chamber.

2. 发明授权

US5280252A Charged particle accelerator 失效
标题翻译：带电粒子加速器
公开(公告)号：US5280252A
公开(公告)日：1994-01-18
申请号：US766410
申请日：1991-09-27
申请人： Ken-ichi Inoue , Akira Kobayashi , Takuya Kusaka , Yutaka Kawata , Kouji Inoue , Kiyotaka Ishibashi , Yukito Furukawa , Toshiji Suzuki , Tetsuo Tokumura , Mitsuo Terada
发明人： Ken-ichi Inoue , Akira Kobayashi , Takuya Kusaka , Yutaka Kawata , Kouji Inoue , Kiyotaka Ishibashi , Yukito Furukawa , Toshiji Suzuki , Tetsuo Tokumura , Mitsuo Terada
IPC分类号： H05H7/18 , H05H9/00 , H05H7/00
CPC分类号： H05H7/18 , H05H9/00
摘要： A charged particle accelerator capable of accelerating arbitrarily charged particles to an arbitrary energy level and resonating at a low frequency suitable for accelerating heavy ions, including quadruple electrodes which are supplied with high frequency power and disposed in the direction of the center axis of a cylinder-shaped container and a resonant circuit having a capacitor and an inductor for supplying a voltage to the quadruple electrodes. The capacitor is composed of a plurality of metallic plates provided along the center axis at specified intervals in the vicinity of the quadruple electrodes, and a plurality of conductive supports supporting the metallic plates which are directly connected to the container together with the supports and the container form the inductor. Since the metallic plates and the quadruple electrodes are electrically directly connected to each other, an arbitrary resonant frequency can be obtained by adjusting the intervals between the plurality of metallic plates with a position adjusting mechanism. In one embodiment, flat electrodes are protruded from opposite sides of the inner wall of the container and are disposed in parallel to the center axis and close to each other to constitute a capacitor, which makes it possible to have a resonant frequency in a low frequency range. To obtain a large Q value, the surface current resistance is lowered by covering the inner wall of the container and the surfaces of the flat plate electrodes with a superconductive material.
摘要翻译：一种带电粒子加速器，其能够将任意带电粒子加速到任意能级，并以适合于加速重离子的低频谐振，包括提供高频功率的四极电极，并且设置在圆柱形电极的中心轴线方向，以及具有用于向四极电极提供电压的电容器和电感器的谐振电路。电容器由在四极电极附近以规定间隔沿着中心轴设置的多个金属板构成，并且支撑金属板的多个导电支撑件与支撑件和容器一起直接连接到容器形成电感器。由于金属板和四极电极彼此电连接，因此可以通过利用位置调节机构调节多个金属板之间的间隔来获得任意共振频率。在一个实施例中，扁平电极从容器的内壁的相对侧突出并且平行于中心轴设置并且彼此靠近以构成电容器，这使得可以具有低频率的谐振频率范围。为了获得大的Q值，通过用超导材料覆盖容器的内壁和平板电极的表面来降低表面电流电阻。

3. 发明授权

US5350920A Ion beam analyzing apparatus 失效
标题翻译：离子束分析仪
公开(公告)号：US5350920A
公开(公告)日：1994-09-27
申请号：US994953
申请日：1992-12-22
申请人： Hirofumi Fukuyama , Tatuya Noguchi , Kenichi Inoue , Kiyotaka Ishibashi , Shigeto Adachi
发明人： Hirofumi Fukuyama , Tatuya Noguchi , Kenichi Inoue , Kiyotaka Ishibashi , Shigeto Adachi
IPC分类号： G01N23/225 , G01Q90/00 , H01J37/04 , H01J37/09 , H01J37/22 , H01J37/252 , H01J37/256 , H01J37/28
CPC分类号： H01J37/263 , H01J37/22 , H01J37/256
摘要： An ion beam analyzing apparatus wherein a scan image displayed on display means and the profile of an ion beam can be made coincide with each other readily to assure a high operability. Slit members for X and Y directions of an objector collimator are provided for movement to vary the dimensions of slits defined thereby, and dimensions A and B of the slits in the X and Y directions are detected. Dimensions X' and Y' of a spot of an ion beam irradiated upon a specimen on a target are calculated by multiplying the dimensions A and B by reduction ratios fx and fy of quadruple pole magnetic lenses, respectively, and then the dimensions X' and Y' are multiplied by values obtained by division of conditions Cx and Cy of an image apparatus by current scanning widths Sx and Sy of deflecting electrodes to calculate enlarged beam spot diameters X" and Y" respectively. An image having the diameters X" and Y" is displayed on a cathode ray tube so that an operator can visually grasp it. Consequently, a scan image of the specimen and the profile of the ion beam can be made coincide readily with each other by manual operation of a manually operable mechanism of a beam position setter.
摘要翻译：一种离子束分析装置，其中可以使显示装置上显示的扫描图像和离子束的轮廓彼此一致，以确保高可操作性。提供了用于移动以使由此限定的狭缝的尺寸变化的反射器准直器的X和Y方向的狭缝构件，并且检测X和Y方向上狭缝的尺寸A和B. 通过将尺寸A和B分别乘以四极磁性透镜的减速比fx和fy分别计算照射到目标上的样本上的离子束点的尺寸X'和Y'，然后将尺寸X'和 Y'乘以通过用偏转电极的当前扫描宽度Sx和Sy分割图像装置的条件Cx和Cy分割获得的值，以分别计算扩大的光点直径X“和Y”。具有直径X“和Y”的图像显示在阴极射线管上，使得操作者可以在视觉上掌握它。因此，可以通过手动操作光束位置设定器的手动操作的机构，使样本的扫描图像和离子束的轮廓容易地彼此一致。

4. 发明授权

US4940015A Plasma reactor for diamond synthesis 失效
标题翻译：用于金刚石合成的等离子体反应器
公开(公告)号：US4940015A
公开(公告)日：1990-07-10
申请号：US379586
申请日：1989-07-13
申请人： Koji Kobashi , Kozo Nishimura , Koichi Miyata , Yoshio Kawate , Kazuo Kumagai , Norio Suzuki , Yutaka Kawata , Kiyotaka Ishibashi
发明人： Koji Kobashi , Kozo Nishimura , Koichi Miyata , Yoshio Kawate , Kazuo Kumagai , Norio Suzuki , Yutaka Kawata , Kiyotaka Ishibashi
IPC分类号： C23C16/26 , C23C16/27 , C23C16/50 , C23C16/511 , C30B25/10 , C30B29/04 , H01J37/32
CPC分类号： C23C16/274 , C23C16/26 , C23C16/277 , C23C16/511 , C30B25/105 , H01J37/32192 , H01J37/32284 , H01J37/32733 , H01J2237/339
摘要： A plasma reactor for diamond synthesis includes a microwave generator, a waveguide connected to the microwave generator, an antenna disposed within the waveguide to direct the microwaves propagated along the waveguide toward the interior of a reaction chamber, a microwave window provided above the upper wall of the waveguide, a reaction chamber defined by (a) a cylindrical bottom member hermetically joined to the microwave window and the waveguide, (b) a reaction gas inlet port and a gas outlet port in the side wall thereof, and (c) a substrate holder disposed within the reaction chamber in facing opposition to the microwave window so as to be moved toward and away from the microwave window to adjust the distance between the microwave window and the substrate holder to generate a desired microwave resonance mode. A plasma is produced only in the central portion of the reaction chamber, so that the etching of the microwave window and the resulting contamination of the diamond film by impurities produced by etching the microwave window are prevented. The plasma reactor for diamond synthesis is capable of forming a high-quality diamond film on a large surface of a substrate at a high growth rate in a range of 1 to 2 .mu.m/hr.
摘要翻译：用于金刚石合成的等离子体反应器包括微波发生器，连接到微波发生器的波导，设置在波导内的天线，以将沿波导传播的微波导向反应室的内部，设置在反应室的上壁上方的微波窗口波导，由（a）气密地接合到微波窗口和波导的圆柱形底部构件限定的反应室，（b）侧壁中的反应气体入口和气体出口，以及（c）基板保持器设置在与微波窗口相对的反应室内，以便朝向和远离微波窗口移动，以调节微波窗口和衬底保持器之间的距离以产生所需的微波谐振模式。仅在反应室的中心部分产生等离子体，从而防止了通过蚀刻微波窗口产生的杂质对微波窗口的蚀刻和金刚石膜的污染。用于金刚石合成的等离子体反应器能够以1至2μm/ hr的高生长速率在基板的大表面上形成高质量的金刚石膜。

5. 发明授权

US08915999B2 Shower plate sintered integrally with gas release hole member and method for manufacturing the same 有权
标题翻译：与气体释放孔构件一体烧结的淋浴板及其制造方法
公开(公告)号：US08915999B2
公开(公告)日：2014-12-23
申请号：US12446913
申请日：2007-09-26
申请人： Masahiro Okesaku , Tadahiro Ohmi , Tetsuya Goto , Takaaki Matsuoka , Toshihisa Nozawa , Atsutoshi Inokuchi , Kiyotaka Ishibashi
发明人： Masahiro Okesaku , Tadahiro Ohmi , Tetsuya Goto , Takaaki Matsuoka , Toshihisa Nozawa , Atsutoshi Inokuchi , Kiyotaka Ishibashi
IPC分类号： C23C16/455 , H01J37/32 , H01L21/3065
CPC分类号： H01J37/3244 , C23C16/45565 , C23C16/45568 , H01J37/32192 , H01J37/32449 , H01J37/32477 , H01J37/3255
摘要： A shower plate is disposed in a processing chamber in a plasma processing apparatus, and plasma excitation gas is released into the processing chamber so as to generate plasma. A ceramic member having a plurality of gas release holes having a diameter of 20 μm to 70 μm, and/or a porous gas-communicating body having pores having a maximum diameter of not more than 75 μm communicating in the gas-communicating direction are sintered and bonded integrally with the inside of each of a plurality of vertical holes which act as release paths for the plasma excitation gas.
摘要翻译：喷淋板设置在等离子体处理装置的处理室中，等离子体激发气体释放到处理室中以产生等离子体。具有多个直径为20μm至70μm的气体释放孔的陶瓷构件和/或具有气体连通方向上连通的最大直径不大于75μm的孔的多孔气体连通体被烧结并且与用作等离子体激发气体的释放路径的多个垂直孔的每一个的内部一体地结合。

6. 发明申请

US20120267048A1 PLASMA PROCESSING APPARATUS 有权
标题翻译：等离子体加工设备
公开(公告)号：US20120267048A1
公开(公告)日：2012-10-25
申请号：US13454513
申请日：2012-04-24
申请人： Kazuki Moyama , Kiyotaka Ishibashi , Osamu Morita , Takehiro Tanikawa , Naoki Matsumoto , Naoki Mihara , Wataru Yoshikawa
发明人： Kazuki Moyama , Kiyotaka Ishibashi , Osamu Morita , Takehiro Tanikawa , Naoki Matsumoto , Naoki Mihara , Wataru Yoshikawa
IPC分类号： B05C5/00
CPC分类号： H01J37/32192 , H01J37/32229 , H01J37/3244
摘要： A plasma processing apparatus includes a processing chamber, a stage, a dielectric member, a microwave introduction device, an injector, and an electric field shield. The processing chamber has a processing space therein. The stage is provided within the processing chamber. The dielectric member has a through hole and is provided to face the stage. The microwave introduction device is configured to introduce microwave into the processing space via the dielectric member. The injector has at least one through hole and is made of a dielectric material, e.g., a bulk dielectric material. The injector is provided within the dielectric member. The injector and the through hole of the dielectric member form a path for supplying a processing gas into the processing space. The electric field shield encloses the injector.
摘要翻译：等离子体处理装置包括处理室，载物台，电介质构件，微波引入装置，注射器和电场屏蔽。处理室在其中具有处理空间。工作台设置在处理室内。电介质构件具有通孔并且设置成面向台。微波引入装置经由电介质构件将微波引入处理空间。喷射器具有至少一个通孔，并且由介电材料制成，例如大体电介质材料。喷射器设置在电介质构件内。介电构件的注射器和通孔形成用于将处理气体供应到处理空间的路径。电场屏蔽封闭注射器。

7. 发明申请

US20120160809A1 PLASMA PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD 有权
标题翻译：等离子体处理装置和基板处理方法
公开(公告)号：US20120160809A1
公开(公告)日：2012-06-28
申请号：US13391310
申请日：2010-08-16
申请人： Kiyotaka Ishibashi , Osamu Morita
发明人： Kiyotaka Ishibashi , Osamu Morita
IPC分类号： B44C1/22 , H01L21/3065 , H05H1/46 , C23C16/511
CPC分类号： H01J37/32192 , C23C16/455 , C23C16/511 , H01J37/3222 , H01J37/32229 , H01J37/3244 , H05H1/46 , H05H2001/463
摘要： A microwave supply unit 20 of a plasma processing apparatus 11 includes a stub member 51 configured to be extensible from the outer conductor 33 toward the inner conductor 32. The stub member 51 serves as a distance varying device for varying a distance in the radial direction between a part of the outer surface 36 of the inner conductor 32 and a facing member facing the part of the outer surface of the inner conductor 32 in the radial direction, i.e., the cooling plate protrusion 47. The stub member 51 includes a rod-shaped member 52 supported at the outer conductor 33 and configured to be extended in the radial direction; and a screw 53 as a moving distance adjusting member for adjusting a moving distance of the rod-shaped member 52 in the radial direction.
摘要翻译：等离子体处理装置11的微波供给单元20包括构造成可从外导体33向内导体32延伸的短截线构件51.短截线构件51用作变距装置，用于改变径向方向上的距离内导体32的外表面36的一部分和面向内径部分的内导体32的外表面的一部分的面对构件即冷却板突起47.短针构件51包括杆状构件52支撑在外导体33处并且构造成沿径向方向延伸; 以及作为用于调节棒状构件52在径向上的移动距离的移动距离调节构件的螺钉53。

8. 发明授权

US07940009B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US07940009B2
公开(公告)日：2011-05-10
申请号：US12274650
申请日：2008-11-20
申请人： Kiyotaka Ishibashi , Toshihisa Nozawa
发明人： Kiyotaka Ishibashi , Toshihisa Nozawa
IPC分类号： H01B31/26 , C23C16/00
CPC分类号： H01J37/32192 , H01J37/32238
摘要： A plasma processing apparatus includes a chamber for carrying out plasma processing inside, a top plate made of a dielectric material for sealing the upper side of this chamber, and an antenna section that serves as a high frequency supply for supplying high frequency waves into the chamber via this top plate. The top plate is provided with reflecting members inside thereof. The sidewalls of the reflecting members work as wave reflector for reflecting high frequency waves that propagate inside the top plate in the radius direction. Alternatively, no reflecting members may be provided in a manner in which the sidewalls of a recess of the top plate serve as a wave reflector means.
摘要翻译：等离子体处理装置包括用于在内部进行等离子体处理的室，由用于密封该室的上侧的电介质材料制成的顶板和用作将高频波供应到室中的高频电源的天线部分通过这个顶板。顶板在其内设有反射构件。反射部件的侧壁作为反射用于反射在顶板内部沿半径方向传播的高频波的波反射体。或者，不能以顶板的凹部的侧壁用作波反射器装置的方式设置反射部件。

9. 发明申请

US20100032094A1 CEILING PLATE AND PLASMA PROCESS APPARATUS 有权
标题翻译：天花板和等离子体工艺设备
公开(公告)号：US20100032094A1
公开(公告)日：2010-02-11
申请号：US12441429
申请日：2008-08-20
申请人： Caizhong Tian , Tetsuya Nishizuka , Kiyotaka Ishibashi , Toshihisa Nozawa
发明人： Caizhong Tian , Tetsuya Nishizuka , Kiyotaka Ishibashi , Toshihisa Nozawa
IPC分类号： H01L21/306 , C23C16/54
CPC分类号： H01L21/461 , C23C16/511 , H01J37/32192 , H01J37/3222 , H05H1/46 , Y10T428/24273
摘要： A ceiling plate provided at a ceiling portion of a process chamber that may be evacuated to a vacuum is disclosed. The ceiling plate allows microwaves emitted from a slot of a planar antenna member provided along with the ceiling plate to pass through the ceiling plate into the process chamber, and includes plural protrusion portions provided in a radial pattern on a surface of the ceiling plate, the surface facing toward an inside of the process chamber.
摘要翻译：公开了一种设置在可以被抽真空的处理室的顶部的顶板。顶棚板允许从天花板板设置的平面天线构件的槽口发射的微波通过顶板进入处理室，并且包括在天花板的表面上以放射状图案设置的多个突起部分，表面朝向处理室的内部。

10. 发明申请

US20090255324A1 SEALING STRUCTURE OF PLASMA PROCESSING APPARATUS, SEALING METHOD, AND PLASMA PROCESSING APPARATUS INCLUDING THE SEALING STRUCTURE 有权
标题翻译：等离子体加工设备的密封结构，密封方法和等离子体加工设备，包括密封结构
公开(公告)号：US20090255324A1
公开(公告)日：2009-10-15
申请号：US12419574
申请日：2009-04-07
申请人： Kiyotaka Ishibashi , Yoshiharu Kishida
发明人： Kiyotaka Ishibashi , Yoshiharu Kishida
IPC分类号： G01N7/00 , H01L21/3065 , C23C16/54
CPC分类号： H01L21/67069 , C23C16/54
摘要： A gate valve corresponding to the sealing structure seals an opening of a plasma generation chamber and includes a valve body, a valve stem, and ring-shaped first and second sealing members that seal a gap between the valve body and the plasma generation chamber. The first ring-shaped sealing member is on the side of the plasma generation chamber and is exposed to a plasma atmosphere. The first and second ring-shaped sealing members do not contact each other, that is, a gap is formed therebetween. A plurality of gas grooves are arranged in the length direction of the first ring-shaped sealing member. The gas grooves are formed by cutting the valve body in a direction almost perpendicular to the length direction of the first ring-shaped sealing member, and the gap is in communication with the plasma generation chamber via the gas grooves. A gas injection passage 14 for injecting a gas into the gap is formed in the wall of the plasma generation chamber. A concave portion extending along the length direction of the first ring-shaped sealing member is formed on the surface of the plasma generation chamber, and the concave portion is connected to a gas outlet of the gas injection passage.
摘要翻译：对应于密封结构的闸阀密封等离子体产生室的开口，并且包括阀体，阀杆和密封阀体和等离子体产生室之间的间隙的环形的第一和第二密封构件。第一环形密封构件位于等离子体产生室的侧面并暴露于等离子体气氛中。第一和第二环形密封构件彼此不接触，即在它们之间形成间隙。在第一环形密封构件的长度方向上布置有多个气体槽。通过沿着与第一环状密封构件的长度方向大致垂直的方向切断阀体而形成气体槽，该间隙经由气体槽与等离子体生成室连通。在等离子体产生室的壁上形成用于将气体注入到间隙中的气体注入通道14。在等离子体产生室的表面上形成有沿着第一环状密封部件的长度方向延伸的凹部，该凹部与气体喷出通路的气体出口连接。

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