专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20120267048A1 PLASMA PROCESSING APPARATUS 有权
标题翻译：等离子体加工设备
公开(公告)号：US20120267048A1
公开(公告)日：2012-10-25
申请号：US13454513
申请日：2012-04-24
申请人： Kazuki Moyama , Kiyotaka Ishibashi , Osamu Morita , Takehiro Tanikawa , Naoki Matsumoto , Naoki Mihara , Wataru Yoshikawa
发明人： Kazuki Moyama , Kiyotaka Ishibashi , Osamu Morita , Takehiro Tanikawa , Naoki Matsumoto , Naoki Mihara , Wataru Yoshikawa
IPC分类号： B05C5/00
CPC分类号： H01J37/32192 , H01J37/32229 , H01J37/3244
摘要： A plasma processing apparatus includes a processing chamber, a stage, a dielectric member, a microwave introduction device, an injector, and an electric field shield. The processing chamber has a processing space therein. The stage is provided within the processing chamber. The dielectric member has a through hole and is provided to face the stage. The microwave introduction device is configured to introduce microwave into the processing space via the dielectric member. The injector has at least one through hole and is made of a dielectric material, e.g., a bulk dielectric material. The injector is provided within the dielectric member. The injector and the through hole of the dielectric member form a path for supplying a processing gas into the processing space. The electric field shield encloses the injector.
摘要翻译：等离子体处理装置包括处理室，载物台，电介质构件，微波引入装置，注射器和电场屏蔽。处理室在其中具有处理空间。工作台设置在处理室内。电介质构件具有通孔并且设置成面向台。微波引入装置经由电介质构件将微波引入处理空间。喷射器具有至少一个通孔，并且由介电材料制成，例如大体电介质材料。喷射器设置在电介质构件内。介电构件的注射器和通孔形成用于将处理气体供应到处理空间的路径。电场屏蔽封闭注射器。

2. 发明申请

US20120160809A1 PLASMA PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD 有权
标题翻译：等离子体处理装置和基板处理方法
公开(公告)号：US20120160809A1
公开(公告)日：2012-06-28
申请号：US13391310
申请日：2010-08-16
申请人： Kiyotaka Ishibashi , Osamu Morita
发明人： Kiyotaka Ishibashi , Osamu Morita
IPC分类号： B44C1/22 , H01L21/3065 , H05H1/46 , C23C16/511
CPC分类号： H01J37/32192 , C23C16/455 , C23C16/511 , H01J37/3222 , H01J37/32229 , H01J37/3244 , H05H1/46 , H05H2001/463
摘要： A microwave supply unit 20 of a plasma processing apparatus 11 includes a stub member 51 configured to be extensible from the outer conductor 33 toward the inner conductor 32. The stub member 51 serves as a distance varying device for varying a distance in the radial direction between a part of the outer surface 36 of the inner conductor 32 and a facing member facing the part of the outer surface of the inner conductor 32 in the radial direction, i.e., the cooling plate protrusion 47. The stub member 51 includes a rod-shaped member 52 supported at the outer conductor 33 and configured to be extended in the radial direction; and a screw 53 as a moving distance adjusting member for adjusting a moving distance of the rod-shaped member 52 in the radial direction.
摘要翻译：等离子体处理装置11的微波供给单元20包括构造成可从外导体33向内导体32延伸的短截线构件51.短截线构件51用作变距装置，用于改变径向方向上的距离内导体32的外表面36的一部分和面向内径部分的内导体32的外表面的一部分的面对构件即冷却板突起47.短针构件51包括杆状构件52支撑在外导体33处并且构造成沿径向方向延伸; 以及作为用于调节棒状构件52在径向上的移动距离的移动距离调节构件的螺钉53。

3. 发明授权

US09237638B2 Plasma processing apparatus and substrate processing method 有权
标题翻译：等离子体处理装置和基板处理方法
公开(公告)号：US09237638B2
公开(公告)日：2016-01-12
申请号：US13391310
申请日：2010-08-16
申请人： Kiyotaka Ishibashi , Osamu Morita
发明人： Kiyotaka Ishibashi , Osamu Morita
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H05H1/46 , C23C16/511 , H01J37/32
CPC分类号： H01J37/32192 , C23C16/455 , C23C16/511 , H01J37/3222 , H01J37/32229 , H01J37/3244 , H05H1/46 , H05H2001/463
摘要： A microwave supply unit 20 of a plasma processing apparatus 11 includes a stub member 51 configured to be extensible from the outer conductor 33 toward the inner conductor 32. The stub member 51 serves as a distance varying device for varying a distance in the radial direction between a part of the outer surface 36 of the inner conductor 32 and a facing member facing the part of the outer surface of the inner conductor 32 in the radial direction, i.e., the cooling plate protrusion 47. The stub member 51 includes a rod-shaped member 52 supported at the outer conductor 33 and configured to be extended in the radial direction; and a screw 53 as a moving distance adjusting member for adjusting a moving distance of the rod-shaped member 52 in the radial direction.
摘要翻译：等离子体处理装置11的微波供给单元20包括构造成可从外导体33向内导体32延伸的短截线构件51.短截线构件51用作变距装置，用于改变径向方向上的距离内导体32的外表面36的一部分和面向内径部分的内导体32的外表面的一部分的面对构件即冷却板突起47.短针构件51包括杆状构件52支撑在外导体33处并且构造成沿径向方向延伸; 以及作为用于调节棒状构件52在径向上的移动距离的移动距离调节构件的螺钉53。

4. 发明授权

US09111726B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US09111726B2
公开(公告)日：2015-08-18
申请号：US13454513
申请日：2012-04-24
申请人： Kazuki Moyama , Kiyotaka Ishibashi , Osamu Morita , Takehiro Tanikawa , Naoki Matsumoto , Naoki Mihara , Wataru Yoshikawa
发明人： Kazuki Moyama , Kiyotaka Ishibashi , Osamu Morita , Takehiro Tanikawa , Naoki Matsumoto , Naoki Mihara , Wataru Yoshikawa
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H01J37/32
CPC分类号： H01J37/32192 , H01J37/32229 , H01J37/3244
摘要： A plasma processing apparatus includes a processing chamber, a stage, a dielectric member, a microwave introduction device, an injector, and an electric field shield. The processing chamber has a processing space therein. The stage is provided within the processing chamber. The dielectric member has a through hole and is provided to face the stage. The microwave introduction device is configured to introduce microwave into the processing space via the dielectric member. The injector has at least one through hole and is made of a dielectric material, e.g., a bulk dielectric material. The injector is provided within the dielectric member. The injector and the through hole of the dielectric member form a path for supplying a processing gas into the processing space. The electric field shield encloses the injector.
摘要翻译：等离子体处理装置包括处理室，载物台，电介质构件，微波引入装置，注射器和电场屏蔽。处理室在其中具有处理空间。工作台设置在处理室内。电介质构件具有通孔并且设置成面向台。微波引入装置经由电介质构件将微波引入处理空间。喷射器具有至少一个通孔，并且由介电材料制成，例如大体电介质材料。喷射器设置在电介质构件内。介电构件的注射器和通孔形成用于将处理气体供应到处理空间的路径。电场屏蔽封闭注射器。

5. 发明授权

US09595425B2 Antenna, dielectric window, plasma processing apparatus and plasma processing method 有权
标题翻译：天线，电介质窗，等离子体处理装置和等离子体处理方法
公开(公告)号：US09595425B2
公开(公告)日：2017-03-14
申请号：US13541940
申请日：2012-07-05
申请人： Naoki Matsumoto , Wataru Yoshikawa , Jun Yoshikawa , Kazuki Moyama , Kiyotaka Ishibashi , Osamu Morita , Takehiro Tanikawa
发明人： Naoki Matsumoto , Wataru Yoshikawa , Jun Yoshikawa , Kazuki Moyama , Kiyotaka Ishibashi , Osamu Morita , Takehiro Tanikawa
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H01J37/32
CPC分类号： H01J37/32238
摘要： An antenna, a dielectric window, a plasma processing apparatus and a plasma processing method are capable of improving uniformity of a substrate surface processing amount in the surface of the substrate. The antenna includes the dielectric window 16; and a slot plate 20, provided on one side of the dielectric window 16, having a plurality of slots 133. The dielectric window 16 has a flat surface 146 surrounded by a ring-shaped first recess; and a plurality of second recesses 153 formed on the flat surface 146 so as to surround a center of the flat surface 146. Here, the flat surface 146 is formed on the other side of the dielectric window 16. When viewed from a thickness direction of the slot plate, a center of each second recess 153 is located within each slot 133 of the slot plate.
摘要翻译：天线，电介质窗，等离子体处理装置和等离子体处理方法能够提高基板表面的基板表面处理量的均匀性。天线包括电介质窗16; 以及设置在电介质窗口16的一侧上的槽板20，具有多个狭槽133.介电窗口16具有由环形的第一凹部包围的平坦表面146; 以及形成在平坦表面146上以围绕平坦表面146的中心的多个第二凹部153.这里，平坦表面146形成在电介质窗口16的另一侧。当从厚度方向槽板，每个第二凹槽153的中心位于槽板的每个槽133内。

6. 发明授权

US08915999B2 Shower plate sintered integrally with gas release hole member and method for manufacturing the same 有权
标题翻译：与气体释放孔构件一体烧结的淋浴板及其制造方法
公开(公告)号：US08915999B2
公开(公告)日：2014-12-23
申请号：US12446913
申请日：2007-09-26
申请人： Masahiro Okesaku , Tadahiro Ohmi , Tetsuya Goto , Takaaki Matsuoka , Toshihisa Nozawa , Atsutoshi Inokuchi , Kiyotaka Ishibashi
发明人： Masahiro Okesaku , Tadahiro Ohmi , Tetsuya Goto , Takaaki Matsuoka , Toshihisa Nozawa , Atsutoshi Inokuchi , Kiyotaka Ishibashi
IPC分类号： C23C16/455 , H01J37/32 , H01L21/3065
CPC分类号： H01J37/3244 , C23C16/45565 , C23C16/45568 , H01J37/32192 , H01J37/32449 , H01J37/32477 , H01J37/3255
摘要： A shower plate is disposed in a processing chamber in a plasma processing apparatus, and plasma excitation gas is released into the processing chamber so as to generate plasma. A ceramic member having a plurality of gas release holes having a diameter of 20 μm to 70 μm, and/or a porous gas-communicating body having pores having a maximum diameter of not more than 75 μm communicating in the gas-communicating direction are sintered and bonded integrally with the inside of each of a plurality of vertical holes which act as release paths for the plasma excitation gas.
摘要翻译：喷淋板设置在等离子体处理装置的处理室中，等离子体激发气体释放到处理室中以产生等离子体。具有多个直径为20μm至70μm的气体释放孔的陶瓷构件和/或具有气体连通方向上连通的最大直径不大于75μm的孔的多孔气体连通体被烧结并且与用作等离子体激发气体的释放路径的多个垂直孔的每一个的内部一体地结合。

7. 发明授权

US07940009B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US07940009B2
公开(公告)日：2011-05-10
申请号：US12274650
申请日：2008-11-20
申请人： Kiyotaka Ishibashi , Toshihisa Nozawa
发明人： Kiyotaka Ishibashi , Toshihisa Nozawa
IPC分类号： H01B31/26 , C23C16/00
CPC分类号： H01J37/32192 , H01J37/32238
摘要： A plasma processing apparatus includes a chamber for carrying out plasma processing inside, a top plate made of a dielectric material for sealing the upper side of this chamber, and an antenna section that serves as a high frequency supply for supplying high frequency waves into the chamber via this top plate. The top plate is provided with reflecting members inside thereof. The sidewalls of the reflecting members work as wave reflector for reflecting high frequency waves that propagate inside the top plate in the radius direction. Alternatively, no reflecting members may be provided in a manner in which the sidewalls of a recess of the top plate serve as a wave reflector means.
摘要翻译：等离子体处理装置包括用于在内部进行等离子体处理的室，由用于密封该室的上侧的电介质材料制成的顶板和用作将高频波供应到室中的高频电源的天线部分通过这个顶板。顶板在其内设有反射构件。反射部件的侧壁作为反射用于反射在顶板内部沿半径方向传播的高频波的波反射体。或者，不能以顶板的凹部的侧壁用作波反射器装置的方式设置反射部件。

8. 发明申请

US20100032094A1 CEILING PLATE AND PLASMA PROCESS APPARATUS 有权
标题翻译：天花板和等离子体工艺设备
公开(公告)号：US20100032094A1
公开(公告)日：2010-02-11
申请号：US12441429
申请日：2008-08-20
申请人： Caizhong Tian , Tetsuya Nishizuka , Kiyotaka Ishibashi , Toshihisa Nozawa
发明人： Caizhong Tian , Tetsuya Nishizuka , Kiyotaka Ishibashi , Toshihisa Nozawa
IPC分类号： H01L21/306 , C23C16/54
CPC分类号： H01L21/461 , C23C16/511 , H01J37/32192 , H01J37/3222 , H05H1/46 , Y10T428/24273
摘要： A ceiling plate provided at a ceiling portion of a process chamber that may be evacuated to a vacuum is disclosed. The ceiling plate allows microwaves emitted from a slot of a planar antenna member provided along with the ceiling plate to pass through the ceiling plate into the process chamber, and includes plural protrusion portions provided in a radial pattern on a surface of the ceiling plate, the surface facing toward an inside of the process chamber.
摘要翻译：公开了一种设置在可以被抽真空的处理室的顶部的顶板。顶棚板允许从天花板板设置的平面天线构件的槽口发射的微波通过顶板进入处理室，并且包括在天花板的表面上以放射状图案设置的多个突起部分，表面朝向处理室的内部。

9. 发明申请

US20090255324A1 SEALING STRUCTURE OF PLASMA PROCESSING APPARATUS, SEALING METHOD, AND PLASMA PROCESSING APPARATUS INCLUDING THE SEALING STRUCTURE 有权
标题翻译：等离子体加工设备的密封结构，密封方法和等离子体加工设备，包括密封结构
公开(公告)号：US20090255324A1
公开(公告)日：2009-10-15
申请号：US12419574
申请日：2009-04-07
申请人： Kiyotaka Ishibashi , Yoshiharu Kishida
发明人： Kiyotaka Ishibashi , Yoshiharu Kishida
IPC分类号： G01N7/00 , H01L21/3065 , C23C16/54
CPC分类号： H01L21/67069 , C23C16/54
摘要： A gate valve corresponding to the sealing structure seals an opening of a plasma generation chamber and includes a valve body, a valve stem, and ring-shaped first and second sealing members that seal a gap between the valve body and the plasma generation chamber. The first ring-shaped sealing member is on the side of the plasma generation chamber and is exposed to a plasma atmosphere. The first and second ring-shaped sealing members do not contact each other, that is, a gap is formed therebetween. A plurality of gas grooves are arranged in the length direction of the first ring-shaped sealing member. The gas grooves are formed by cutting the valve body in a direction almost perpendicular to the length direction of the first ring-shaped sealing member, and the gap is in communication with the plasma generation chamber via the gas grooves. A gas injection passage 14 for injecting a gas into the gap is formed in the wall of the plasma generation chamber. A concave portion extending along the length direction of the first ring-shaped sealing member is formed on the surface of the plasma generation chamber, and the concave portion is connected to a gas outlet of the gas injection passage.
摘要翻译：对应于密封结构的闸阀密封等离子体产生室的开口，并且包括阀体，阀杆和密封阀体和等离子体产生室之间的间隙的环形的第一和第二密封构件。第一环形密封构件位于等离子体产生室的侧面并暴露于等离子体气氛中。第一和第二环形密封构件彼此不接触，即在它们之间形成间隙。在第一环形密封构件的长度方向上布置有多个气体槽。通过沿着与第一环状密封构件的长度方向大致垂直的方向切断阀体而形成气体槽，该间隙经由气体槽与等离子体生成室连通。在等离子体产生室的壁上形成用于将气体注入到间隙中的气体注入通道14。在等离子体产生室的表面上形成有沿着第一环状密封部件的长度方向延伸的凹部，该凹部与气体喷出通路的气体出口连接。

10. 发明申请

US20080254220A1 Plasma processing apparatus 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：US20080254220A1
公开(公告)日：2008-10-16
申请号：US12157660
申请日：2008-06-11
申请人： Caizhong Tian , Toshihisa Nozawa , Kiyotaka Ishibashi
发明人： Caizhong Tian , Toshihisa Nozawa , Kiyotaka Ishibashi
IPC分类号： B05D3/04 , C23C16/452 , H01L21/3065
CPC分类号： B32B37/12 , H01J37/32192 , H01J37/3244 , H01J37/32623 , H01J2237/0206 , Y10T156/10
摘要： A plasma processing apparatus includes a vacuum processing container, and a placing table for placing an object which is arranged in the container and is to be processed. The processing container includes a tubular container body having an upper opening, and a dielectric top plate attached hermetically to the upper opening of the body and transmitting an electromagnetic wave. The plasma processing apparatus further includes an electromagnetic wave supplying system for supplying an electromagnetic wave for generating plasma into the container through the top plate, and a gas supplying system for supplying a gas containing a processing gas into the container. A gas ejecting hole for ejecting the gas supplied from the gas supplying system into the container is formed on the top plate. A discharge prevention member having a permeability is arranged in each ejection hole.
摘要翻译：等离子体处理装置包括真空处理容器和放置在容器内并被处理的物体的放置台。处理容器包括具有上开口的管状容器主体和与主体的上开口气密连接并传输电磁波的电介质顶板。等离子体处理装置还包括电磁波供给系统，用于通过顶板将用于产生等离子体的电磁波提供到容器中;以及气体供给系统，用于将含有处理气体的气体供给到容器中。在顶板上形成用于将从供气系统供给的气体喷射到容器中的气体喷射孔。在每个喷射孔中布置具有磁导率的防止放电部件。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式