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1. 发明授权

US5351209A Apparatus for converting optical information into electrical information signal, information storage element and method for storing information in the information storage element 失效
标题翻译：用于将光学信息转换成电信息信号的装置，用于将信息存储在信息存储元件中的信息存储元件和方法
公开(公告)号：US5351209A
公开(公告)日：1994-09-27
申请号：US776643
申请日：1991-10-15
申请人： Yutaka Hayashi , Iwao Hamaguchi , Shunsuke Fujita
发明人： Yutaka Hayashi , Iwao Hamaguchi , Shunsuke Fujita
IPC分类号： H01L27/146 , G11C13/04
CPC分类号： H01L27/14643
摘要： An apparatus for converting optical information into an electrical information signal includes a plurality of one-dimensional conversion arrays arranged in parallel form. Each one-dimensional conversion array has first and second photoelectric conversion structures integrally formed. The first photoelectric conversion structure has photoelectric conversion elements each having a light receiving surface onto which an information light is projected. The second photoelectric conversion structure has photoelectric conversion elements each having a sweep light receiving surface onto which a sweep light is projected. The sweep light has a cross section which simultaneously scans the sweep light receiving surface of one of the photoelectric conversion elements included in each of the one-dimensional conversion arrays. The electrical information signal is read out from the photoelectric conversion elements provided in the first photoelectric conversion structure when the sweep light is projected onto the photoelectric conversion elements provided in the second photoelectric conversion structure.
摘要翻译：用于将光学信息转换为电信息信号的装置包括以并行形式布置的多个一维转换阵列。每一维转换阵列具有一体形成的第一和第二光电转换结构。第一光电转换结构具有各自具有投影信息光的受光面的光电转换元件。第二光电转换结构具有光电转换元件，每个光电转换元件具有投射有扫描光的扫掠光接收表面。扫描光具有同时扫描包括在每个一维转换阵列中的一个光电转换元件的扫描光接收表面的横截面。当扫描光投射到设置在第二光电转换结构中的光电转换元件上时，从设置在第一光电转换结构中的光电转换元件读出电信息信号。

2. 发明授权

US5079415A Apparatus for converting optical information into electrical information signal, information storage element and method for storing information in the information storage element 失效
标题翻译：用于将光学信息转换成电信息信号的装置，用于将信息存储在信息存储元件中的信息存储元件和方法
公开(公告)号：US5079415A
公开(公告)日：1992-01-07
申请号：US503046
申请日：1990-04-02
申请人： Yutaka Hayashi , Hiroyoshi Funato , Iwao Hamaguchi , Shunsuke Fujita
发明人： Yutaka Hayashi , Hiroyoshi Funato , Iwao Hamaguchi , Shunsuke Fujita
IPC分类号： H01L27/146
CPC分类号： H01L27/14643
摘要： An apparatus for converting optical information into an electrical information signal includes a plurality of one-dimensional conversion arrays arranged in parallel form. Each one-dimensional conversion array has first and second photoelectric conversion structures integrally formed. The first photoelectric conversion structure has photoelectric conversion elements each having a light receiving surface onto which an information light is projected. The second photoelectric conversion structure has photoelectric conversion elements each having a sweep light receiving surface onto which a sweep light is projected. The sweep light has a cross section which simultaneously scans the sweep light receiving surface of one of the photoelectric conversion elements included in each of the one-dimensional conversion arrays. The electrical information signal is read out from the photoelectric conversion elements provided in the first photoelectric conversion structure when the sweep light is projected onto the photoelectric conversion elements provided in the second photoelectric conversion structure.
摘要翻译：用于将光学信息转换为电信息信号的装置包括以并行形式布置的多个一维转换阵列。每一维转换阵列具有一体形成的第一和第二光电转换结构。第一光电转换结构具有各自具有投影信息光的受光面的光电转换元件。第二光电转换结构具有光电转换元件，每个光电转换元件具有投射有扫描光的扫掠光接收表面。扫描光具有同时扫描包括在每个一维转换阵列中的一个光电转换元件的扫描光接收表面的横截面。当扫描光投射到设置在第二光电转换结构中的光电转换元件上时，从设置在第一光电转换结构中的光电转换元件读出电信息信号。

3. 发明授权

US5235542A Apparatus for converting optical information into electrical information signal, information storage element and method for storing information in the information storage element 失效
标题翻译：用于将光学信息转换成电信息信号的装置，用于将信息存储在信息存储元件中的信息存储元件和方法
公开(公告)号：US5235542A
公开(公告)日：1993-08-10
申请号：US776642
申请日：1991-10-15
申请人： Yutaka Hayashi , Iwao Hamaguchi , Shunsuke Fujita
发明人： Yutaka Hayashi , Iwao Hamaguchi , Shunsuke Fujita
IPC分类号： H01L27/146
CPC分类号： H01L27/14643
摘要： An apparatus for converting optical information into an electrical information signal includes a plurality of one-dimensional conversion arrays arranged in parallel form. Each one-dimensional conversion array has first and second photoelectric conversion structures integrally formed. The first photoelectric conversion structure has photoelectric conversion elements each having a light receiving surface onto which an information light is projected. The second photoelectric conversion structure has photoelectric conversion elements each having a sweep light receiving surface onto which a sweep light is projected. The sweep light has a cross section which simultaneously scans the sweep light receiving surface of one of the photoelectric conversion elements included in each of the one-dimensional conversion arrays. The electrical information signal is read out from the photoelectric conversion elements provided in the first photoelectric conversion structure when the sweep light is projected onto the photoelectric conversion elements provided in the second photoelectric conversion structure.
摘要翻译：用于将光学信息转换为电信息信号的装置包括以并行形式布置的多个一维转换阵列。每一维转换阵列具有一体形成的第一和第二光电转换结构。第一光电转换结构具有各自具有投影信息光的受光面的光电转换元件。第二光电转换结构具有光电转换元件，每个光电转换元件具有投射有扫描光的扫掠光接收表面。扫描光具有同时扫描包括在每个一维转换阵列中的一个光电转换元件的扫描光接收表面的横截面。当扫描光投射到设置在第二光电转换结构中的光电转换元件上时，从设置在第一光电转换结构中的光电转换元件读出电信息信号。

4. 发明授权

US4900396A Method of forming modified layer and pattern 失效
标题翻译：形成改性层和图案的方法
公开(公告)号：US4900396A
公开(公告)日：1990-02-13
申请号：US233585
申请日：1988-08-18
申请人： Yutaka Hayashi , Kenichi Ishii , Shunsuke Fujita
发明人： Yutaka Hayashi , Kenichi Ishii , Shunsuke Fujita
IPC分类号： H01L21/033 , H01L21/314 , H01L21/32
CPC分类号： H01L21/033 , H01L21/3144 , H01L21/32
摘要： A two-dimensional pattern of a silicon oxide film is formed on a silicon surface of a substrate, thereby to form a material, the two-dimensional pattern being represented by the presence and absence and/or thickness variations of the silicon oxide film. The material is nitrided to form a modified layer on the surface of the material, the modified layer being thicker on the silicon oxide film and thinner on the silicon surface of the substrate or thicker on the thicker portion of the silicon oxide film and thinner on the thinner portion of the silicon oxide film. The thinner portion of the modified layer is removed while leaving the thicker portion of the modified layer, for thereby forming the modified layer on the silicon oxide film substantially in the same shape as the silicon oxide film. An oxidant diffusion prevention film is formed at least on a thicker portion of the oxide film which has a thicker portion and a thinner portion on a substrate, then a silicon film, a silicide film, or a multilayer film composed of silicon and silicide films is deposited on a surface of the substrate a mask layer is formed on the film or films. The silicon film, the silicide film, or the multilayer film is oxidized to pattern the same in a shape corresponding to the mask layer. A relatively thin silicon oxide film may be formed on the oxidant diffusion prevention film.
摘要翻译：在基板的硅表面上形成氧化硅膜的二维图案，从而形成材料，二维图案由氧化硅膜的存在和/或厚度变化来表示。该材料被氮化以在材料的表面上形成改性层，改性层在氧化硅膜上更厚并且在衬底的硅表面上更薄，或者在氧化硅膜的较厚部分上更厚，较薄的氧化硅膜部分。除去改性层的较薄部分，同时留下改性层的较厚部分，由此在氧化硅膜上形成基本上与氧化硅膜相同形状的改性层。至少在基板上具有较厚部分和较薄部分的氧化物膜的较厚部分上形成氧化物扩散防止膜，则硅膜，硅化物膜或由硅和硅化物膜构成的多层膜为沉积在衬底的表面上，在膜或膜上形成掩模层。硅膜，硅化物膜或多层膜被氧化成与掩模层相对应的形状。可以在氧化剂扩散防止膜上形成相对薄的氧化硅膜。

5. 发明申请

US20130049575A1 PHOSPHOR COMPOSITE MEMBER, LED DEVICE AND METHOD FOR MANUFACTURING PHOSPHOR COMPOSITE MEMBER 审中-公开
标题翻译：磷化合物成分，LED器件及制造磷化合物成分的方法
公开(公告)号：US20130049575A1
公开(公告)日：2013-02-28
申请号：US13696240
申请日：2011-06-29
申请人： Shunsuke Fujita , Ryota Suzuki , Tadahito Furuyama
发明人： Shunsuke Fujita , Ryota Suzuki , Tadahito Furuyama
IPC分类号： B32B17/06 , B32B37/24 , B32B33/00 , H05B33/14 , B32B18/00
CPC分类号： C09K11/02 , C03C8/08 , C03C8/14 , C04B35/44 , C04B35/645 , C04B37/042 , C04B41/009 , C04B41/5022 , C04B41/86 , C04B2111/807 , C04B2235/3225 , C04B2235/3229 , C04B2235/3418 , C04B2235/441 , C04B2235/5436 , C04B2235/6567 , C04B2235/658 , C04B2235/764 , C04B2235/81 , C04B2235/9646 , C04B2237/343 , C04B2237/58 , C04B2237/70 , C04B2237/704 , C09K11/7774 , H01L33/502 , Y10T428/24355 , C04B41/4539 , C04B41/5027 , C04B41/5053
摘要： Provided is a phosphor composite member having excellent thermal resistance, high color rendition, controllability of various chromaticities from a daylight color to a light bulb color, and high luminescence intensity. A phosphor composite member in which a sintered inorganic powder body layer containing a SnO—P2O5-based glass and an inorganic phosphor powder is formed on a surface of a ceramic base material, wherein upon irradiation with an excitation light, the ceramic base material and the sintered inorganic powder body layer emit different fluorescences having different wavelengths.
摘要翻译：提供了具有优异的耐热性，高显色性，从日光颜色到灯泡颜色的各种色度的可控性以及高发光强度的荧光体复合部件。在陶瓷基材的表面上形成含有SnO-P 2 O 5系玻璃和无机荧光体粉末的烧结无机粉体层的荧光体复合部件，其中，在用激发光照射时，陶瓷基材和烧结无机粉末体层发射具有不同波长的不同荧光。

6. 发明申请

US20110006329A1 WAVELENGTH CONVERSION MEMBER AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：波长转换构件及其制造方法
公开(公告)号：US20110006329A1
公开(公告)日：2011-01-13
申请号：US12866922
申请日：2009-01-28
申请人： Shunsuke Fujita , Yoshio Umayahara , Akihiko Sakamoto
发明人： Shunsuke Fujita , Yoshio Umayahara , Akihiko Sakamoto
IPC分类号： H01L33/50 , B29D11/00 , C09K19/02 , B32B3/30 , B32B17/10 , G02B1/00
CPC分类号： C03C12/00 , C03B19/06 , C03B32/005 , C03B2201/70 , C03C3/19 , C03C14/006 , C03C2214/16 , H01L33/501 , H01L33/505 , H01L2933/0041 , Y10T428/1036 , Y10T428/24479 , Y10T428/2457 , Y10T428/24612
摘要： To provide a wavelength conversion member having good surface accuracy and dimensional accuracy even when processed in various shapes, and a method for manufacturing the same. A method for manufacturing a wavelength conversion member, including the steps of: subjecting a preform made of a powder mixture containing a glass powder and an inorganic phosphor powder to heat treatment, thereby obtaining a sintered powder product; and re-press molding the sintered powder product with a die.
摘要翻译：为了提供即使在各种形状的处理时也具有良好的表面精度和尺寸精度的波长转换构件及其制造方法。一种制造波长转换部件的方法，包括以下步骤：对由玻璃粉末和无机荧光体粉末组成的粉末混合物制成的预制件进行热处理，从而获得烧结粉末产品; 并用模具再次压制烧结粉末产品。

7. 发明授权

US07858502B2 Fabrication method and fabrication apparatus of group III nitride crystal substance 有权
标题翻译： III族氮化物晶体物质的制造方法和制造装置
公开(公告)号：US07858502B2
公开(公告)日：2010-12-28
申请号：US12540492
申请日：2009-08-13
申请人： Hitoshi Kasai , Takuji Okahisa , Shunsuke Fujita , Naoki Matsumoto , Hideyuki Ijiri , Fumitaka Sato , Kensaku Motoki , Seiji Nakahata , Koji Uematsu , Ryu Hirota
发明人： Hitoshi Kasai , Takuji Okahisa , Shunsuke Fujita , Naoki Matsumoto , Hideyuki Ijiri , Fumitaka Sato , Kensaku Motoki , Seiji Nakahata , Koji Uematsu , Ryu Hirota
IPC分类号： H01L21/00
CPC分类号： H01L21/02617 , C23C16/303 , C23C16/4405 , C23C16/4488 , C30B23/02 , C30B25/02 , C30B29/403
摘要： A fabrication method of a group III nitride crystal substance includes the steps of cleaning the interior of a reaction chamber by introducing HCl gas into the reaction chamber, and vapor deposition of a group III nitride crystal substance in the cleaned reaction chamber. A fabrication apparatus of a group III nitride crystal substance includes a configuration to introduce HCl gas into the reaction chamber, and a configuration to grow a group III nitride crystal substance by HVPE. Thus, a fabrication method of a group III nitride crystal substance including the method of effectively cleaning deposits adhering inside the reaction chamber during crystal growth, and a fabrication apparatus employed in the fabrication method are provided.
摘要翻译： III族氮化物晶体物质的制造方法包括以下步骤：通过将HCl气体引入反应室来清洗反应室的内部，并将III族氮化物结晶物质气相沉积在清洁的反应室中。 III族氮化物晶体物质的制造装置包括将HCl气体引入反应室的结构，以及通过HVPE生长III族氮化物结晶物质的结构。因此，提供了包括在晶体生长期间有效清洁附着在反应室内的沉积物的方法的III族氮化物晶体物质的制造方法以及制造方法中使用的制造装置。

8. 发明申请

US20070228400A1 GaN crystal substrate 失效
标题翻译： GaN晶体衬底
公开(公告)号：US20070228400A1
公开(公告)日：2007-10-04
申请号：US11730649
申请日：2007-04-03
申请人： Shunsuke Fujita , Hitoshi Kasai
发明人： Shunsuke Fujita , Hitoshi Kasai
IPC分类号： H01L33/00
CPC分类号： C30B29/406 , C30B33/00 , Y10S117/902
摘要： A GaN crystal substrate has a crystal growth surface on which a crystal is grown, and a rear surface opposite to the crystal growth surface. The crystal growth surface has a roughness Ra(C)of at most 10 nm, and the rear surface has a roughness Ra(R) of at least 0.5 μand at most 10 μm. A ratio Ra(R)/Ra(C) of the surface roughness Ra(R) to the surface roughness Ra(C) is at least 50. Thus, a GaN crystal substrate of which front and rear surfaces are distinguishable from each other is provided, without impairing the morphology of a semiconductor layer grown on the GaN crystal substrate.
摘要翻译： GaN晶体衬底具有生长晶体的晶体生长表面和与晶体生长表面相对的后表面。晶体生长表面具有至多10nm的粗糙度Ra（C），并且后表面的粗糙度Ra（R）至少为0.5μm至多为10 妈妈表面粗糙度Ra（R）与表面粗糙度Ra（C）的比值Ra（R）/ Ra（C））为50.因此，提供了前后表面彼此区分的GaN晶体衬底，而不损害在GaN晶体衬底上生长的半导体层的形态。

9. 发明授权

US08409350B2 Gallium nitride crystal growth method, gallium nitride crystal substrate, epi-wafer manufacturing method, and epi-wafer 有权
标题翻译：氮化镓晶体生长方法，氮化镓晶体衬底，外延晶片制造方法和外延晶片
公开(公告)号：US08409350B2
公开(公告)日：2013-04-02
申请号：US12179587
申请日：2008-07-25
申请人： Shunsuke Fujita
发明人： Shunsuke Fujita
IPC分类号： C30B21/02
CPC分类号： C30B29/406 , C30B25/02
摘要： Affords gallium nitride crystal growth methods, gallium nitride crystal substrates, epi-wafers, and methods of manufacturing the epi-wafers, that make it possible to curb cracking that occurs during thickness reduction operations on the crystal, and to grow gallium nitride crystal having considerable thickness. A gallium nitride crystal growth method in one aspect of the present invention is a method of employing a carrier gas, a gallium nitride precursor, and a gas containing silicon as a dopant, and by hydride vapor phase epitaxy (HVPE) growing gallium nitride crystal onto an undersubstrate. The gallium nitride crystal growth method is characterized in that the carrier-gas dew point during the gallium nitride crystal growth is −60° C. or less.
摘要翻译：提供氮化镓晶体生长方法，氮化镓晶体衬底，外延晶片和制造外延晶片的方法，其可以抑制在晶体上的厚度减小操作期间发生的裂纹，并且生长具有相当大的氮化镓晶体厚度。本发明的一个方面的氮化镓晶体生长方法是使用载气，氮化镓前体和含硅作为掺杂剂的气体，以及通过氢化物气相外延（HVPE）生长氮化镓晶体的方法，下衬底氮化镓晶体生长方法的特征在于，氮化镓晶体生长期间的载气露点为-60℃以下。

10. 发明申请

US20070148920A1 Fabrication method and fabrication apparatus of group III nitride crystal substance 有权
标题翻译： III族氮化物晶体物质的制造方法和制造装置
公开(公告)号：US20070148920A1
公开(公告)日：2007-06-28
申请号：US11643675
申请日：2006-12-22
申请人： Hitoshi Kasai , Takuji Okahisa , Shunsuke Fujita , Naoki Matsumoto , Hideyuki Ijiri , Fumitaka Sato , Kensaku Motoki , Seiji Nakahata , Koji Uematsu , Ryu Hirota
发明人： Hitoshi Kasai , Takuji Okahisa , Shunsuke Fujita , Naoki Matsumoto , Hideyuki Ijiri , Fumitaka Sato , Kensaku Motoki , Seiji Nakahata , Koji Uematsu , Ryu Hirota
IPC分类号： H01L21/20 , C23C16/00
CPC分类号： H01L21/02617 , C23C16/303 , C23C16/4405 , C23C16/4488 , C30B23/02 , C30B25/02 , C30B29/403
摘要： A fabrication method of a group III nitride crystal substance includes the steps of cleaning the interior of a reaction chamber by introducing HCl gas into the reaction chamber, and vapor deposition of a group III nitride crystal substance in the cleaned reaction chamber. A fabrication apparatus of a group III nitride crystal substance includes a configuration to introduce HCl gas into the reaction chamber, and a configuration to grow a group III nitride crystal substance by HVPE. Thus, a fabrication method of a group III nitride crystal substance including the method of effectively cleaning deposits adhering inside the reaction chamber during crystal growth, and a fabrication apparatus employed in the fabrication method are provided.
摘要翻译： III族氮化物晶体物质的制造方法包括以下步骤：通过将HCl气体引入反应室来清洗反应室的内部，并将III族氮化物结晶物质气相沉积在清洁的反应室中。 III族氮化物晶体物质的制造装置包括将HCl气体引入反应室的结构，以及通过HVPE生长III族氮化物结晶物质的结构。因此，提供了包括在晶体生长期间有效清洁附着在反应室内的沉积物的方法的III族氮化物晶体物质的制造方法以及制造方法中使用的制造装置。

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