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1. 发明授权

US07858502B2 Fabrication method and fabrication apparatus of group III nitride crystal substance 有权
标题翻译： III族氮化物晶体物质的制造方法和制造装置
公开(公告)号：US07858502B2
公开(公告)日：2010-12-28
申请号：US12540492
申请日：2009-08-13
申请人： Hitoshi Kasai , Takuji Okahisa , Shunsuke Fujita , Naoki Matsumoto , Hideyuki Ijiri , Fumitaka Sato , Kensaku Motoki , Seiji Nakahata , Koji Uematsu , Ryu Hirota
发明人： Hitoshi Kasai , Takuji Okahisa , Shunsuke Fujita , Naoki Matsumoto , Hideyuki Ijiri , Fumitaka Sato , Kensaku Motoki , Seiji Nakahata , Koji Uematsu , Ryu Hirota
IPC分类号： H01L21/00
CPC分类号： H01L21/02617 , C23C16/303 , C23C16/4405 , C23C16/4488 , C30B23/02 , C30B25/02 , C30B29/403
摘要： A fabrication method of a group III nitride crystal substance includes the steps of cleaning the interior of a reaction chamber by introducing HCl gas into the reaction chamber, and vapor deposition of a group III nitride crystal substance in the cleaned reaction chamber. A fabrication apparatus of a group III nitride crystal substance includes a configuration to introduce HCl gas into the reaction chamber, and a configuration to grow a group III nitride crystal substance by HVPE. Thus, a fabrication method of a group III nitride crystal substance including the method of effectively cleaning deposits adhering inside the reaction chamber during crystal growth, and a fabrication apparatus employed in the fabrication method are provided.
摘要翻译： III族氮化物晶体物质的制造方法包括以下步骤：通过将HCl气体引入反应室来清洗反应室的内部，并将III族氮化物结晶物质气相沉积在清洁的反应室中。 III族氮化物晶体物质的制造装置包括将HCl气体引入反应室的结构，以及通过HVPE生长III族氮化物结晶物质的结构。因此，提供了包括在晶体生长期间有效清洁附着在反应室内的沉积物的方法的III族氮化物晶体物质的制造方法以及制造方法中使用的制造装置。

2. 发明申请

US20070228400A1 GaN crystal substrate 失效
标题翻译： GaN晶体衬底
公开(公告)号：US20070228400A1
公开(公告)日：2007-10-04
申请号：US11730649
申请日：2007-04-03
申请人： Shunsuke Fujita , Hitoshi Kasai
发明人： Shunsuke Fujita , Hitoshi Kasai
IPC分类号： H01L33/00
CPC分类号： C30B29/406 , C30B33/00 , Y10S117/902
摘要： A GaN crystal substrate has a crystal growth surface on which a crystal is grown, and a rear surface opposite to the crystal growth surface. The crystal growth surface has a roughness Ra(C)of at most 10 nm, and the rear surface has a roughness Ra(R) of at least 0.5 μand at most 10 μm. A ratio Ra(R)/Ra(C) of the surface roughness Ra(R) to the surface roughness Ra(C) is at least 50. Thus, a GaN crystal substrate of which front and rear surfaces are distinguishable from each other is provided, without impairing the morphology of a semiconductor layer grown on the GaN crystal substrate.
摘要翻译： GaN晶体衬底具有生长晶体的晶体生长表面和与晶体生长表面相对的后表面。晶体生长表面具有至多10nm的粗糙度Ra（C），并且后表面的粗糙度Ra（R）至少为0.5μm至多为10 妈妈表面粗糙度Ra（R）与表面粗糙度Ra（C）的比值Ra（R）/ Ra（C））为50.因此，提供了前后表面彼此区分的GaN晶体衬底，而不损害在GaN晶体衬底上生长的半导体层的形态。

3. 发明申请

US20070148920A1 Fabrication method and fabrication apparatus of group III nitride crystal substance 有权
标题翻译： III族氮化物晶体物质的制造方法和制造装置
公开(公告)号：US20070148920A1
公开(公告)日：2007-06-28
申请号：US11643675
申请日：2006-12-22
申请人： Hitoshi Kasai , Takuji Okahisa , Shunsuke Fujita , Naoki Matsumoto , Hideyuki Ijiri , Fumitaka Sato , Kensaku Motoki , Seiji Nakahata , Koji Uematsu , Ryu Hirota
发明人： Hitoshi Kasai , Takuji Okahisa , Shunsuke Fujita , Naoki Matsumoto , Hideyuki Ijiri , Fumitaka Sato , Kensaku Motoki , Seiji Nakahata , Koji Uematsu , Ryu Hirota
IPC分类号： H01L21/20 , C23C16/00
CPC分类号： H01L21/02617 , C23C16/303 , C23C16/4405 , C23C16/4488 , C30B23/02 , C30B25/02 , C30B29/403
摘要： A fabrication method of a group III nitride crystal substance includes the steps of cleaning the interior of a reaction chamber by introducing HCl gas into the reaction chamber, and vapor deposition of a group III nitride crystal substance in the cleaned reaction chamber. A fabrication apparatus of a group III nitride crystal substance includes a configuration to introduce HCl gas into the reaction chamber, and a configuration to grow a group III nitride crystal substance by HVPE. Thus, a fabrication method of a group III nitride crystal substance including the method of effectively cleaning deposits adhering inside the reaction chamber during crystal growth, and a fabrication apparatus employed in the fabrication method are provided.
摘要翻译： III族氮化物晶体物质的制造方法包括以下步骤：通过将HCl气体引入反应室来清洗反应室的内部，并将III族氮化物结晶物质气相沉积在清洁的反应室中。 III族氮化物晶体物质的制造装置包括将HCl气体引入反应室的结构，以及通过HVPE生长III族氮化物结晶物质的结构。因此，提供了包括在晶体生长期间有效清洁附着在反应室内的沉积物的方法的III族氮化物晶体物质的制造方法以及制造方法中使用的制造装置。

4. 发明授权

US08404569B2 Fabrication method and fabrication apparatus of group III nitride crystal substance 有权
公开(公告)号：US08404569B2
公开(公告)日：2013-03-26
申请号：US12949268
申请日：2010-11-18
申请人： Hitoshi Kasai , Takuji Okahisa , Shunsuke Fujita , Naoki Matsumoto , Hideyuki Ijiri , Fumitaka Sato , Kensaku Motoki , Seiji Nakahata , Koji Uematsu , Ryu Hirota
发明人： Hitoshi Kasai , Takuji Okahisa , Shunsuke Fujita , Naoki Matsumoto , Hideyuki Ijiri , Fumitaka Sato , Kensaku Motoki , Seiji Nakahata , Koji Uematsu , Ryu Hirota
IPC分类号： H01L21/00
CPC分类号： H01L21/02617 , C23C16/303 , C23C16/4405 , C23C16/4488 , C30B23/02 , C30B25/02 , C30B29/403
摘要： A fabrication method of a group III nitride crystal substance includes the steps of cleaning the interior of a reaction chamber by introducing HCl gas into the reaction chamber, and vapor deposition of a group III nitride crystal substance in the cleaned reaction chamber. A fabrication apparatus of a group III nitride crystal substance includes a configuration to introduce HCl gas into the reaction chamber, and a configuration to grow a group III nitride crystal substance by HVPE. Thus, a fabrication method of a group III nitride crystal substance including the method of effectively cleaning deposits adhering inside the reaction chamber during crystal growth, and a fabrication apparatus employed in the fabrication method are provided.

5. 发明申请

US20110065265A1 FABRICATION METHOD AND FABRICATION APPARATUS OF GROUP III NITRIDE CRYSTAL SUBSTANCE 有权
标题翻译：第III组氮化物晶体的制造方法和制造装置
公开(公告)号：US20110065265A1
公开(公告)日：2011-03-17
申请号：US12949268
申请日：2010-11-18
申请人： Hitoshi KASAI , Takuji Okahisa , Shunsuke Fujita , Naoki Matsumoto , Hideuki Ijiri , Fumitaka Sato , Kensaku Motoki , Seiji Nakahata , Koji Uematsu , Ryu Hirota
发明人： Hitoshi KASAI , Takuji Okahisa , Shunsuke Fujita , Naoki Matsumoto , Hideuki Ijiri , Fumitaka Sato , Kensaku Motoki , Seiji Nakahata , Koji Uematsu , Ryu Hirota
IPC分类号： H01L21/20
CPC分类号： H01L21/02617 , C23C16/303 , C23C16/4405 , C23C16/4488 , C30B23/02 , C30B25/02 , C30B29/403
摘要： A fabrication method of a group III nitride crystal substance includes the steps of cleaning the interior of a reaction chamber by introducing HCl gas into the reaction chamber, and vapor deposition of a group III nitride crystal substance in the cleaned reaction chamber. A fabrication apparatus of a group III nitride crystal substance includes a configuration to introduce HCl gas into the reaction chamber, and a configuration to grow a group III nitride crystal substance by HVPE. Thus, a fabrication method of a group III nitride crystal substance including the method of effectively cleaning deposits adhering inside the reaction chamber during crystal growth, and a fabrication apparatus employed in the fabrication method are provided.
摘要翻译： III族氮化物晶体物质的制造方法包括以下步骤：通过将HCl气体引入反应室来清洗反应室的内部，并将III族氮化物结晶物质气相沉积在清洁的反应室中。 III族氮化物晶体物质的制造装置包括将HCl气体引入反应室的结构，以及通过HVPE生长III族氮化物结晶物质的结构。因此，提供了包括在晶体生长期间有效清洁附着在反应室内的沉积物的方法的III族氮化物晶体物质的制造方法以及制造方法中使用的制造装置。

6. 发明授权

US07825409B2 GaN crystal substrate 失效
标题翻译： GaN晶体衬底
公开(公告)号：US07825409B2
公开(公告)日：2010-11-02
申请号：US11730649
申请日：2007-04-03
申请人： Shunsuke Fujita , Hitoshi Kasai
发明人： Shunsuke Fujita , Hitoshi Kasai
IPC分类号： H01L23/58
CPC分类号： C30B29/406 , C30B33/00 , Y10S117/902
摘要： A GaN crystal substrate has a crystal growth surface on which a crystal is grown, and a rear surface opposite to the crystal growth surface. The crystal growth surface has a roughness Ra(C)of at most 10 nm, and the rear surface has a roughness Ra(R) of at least 0.5 μm and at most 10 μm. A ratio Ra(R)/Ra(C) of the surface roughness Ra(R) to the surface roughness Ra(C) is at least 50. Thus, a GaN crystal substrate of which front and rear surfaces are distinguishable from each other is provided, without impairing the morphology of a semiconductor layer grown on the GaN crystal substrate.
摘要翻译： GaN晶体衬底具有生长晶体的晶体生长表面和与晶体生长表面相对的后表面。晶体生长面的粗糙度Ra（℃）为10nm以下，后表面的粗糙度Ra（R）为0.5μm以上且10μm以下。表面粗糙度Ra（R）与表面粗糙度Ra（C）的比Ra（R）/ Ra（C）至少为50.因此，表面和背面彼此区分的GaN晶体基板是而不损害在GaN晶体衬底上生长的半导体层的形态。

7. 发明申请

US20070280872A1 Method of growing gallium nitride crystal and gallium nitride substrate 审中-公开
标题翻译：生长氮化镓晶体和氮化镓衬底的方法
公开(公告)号：US20070280872A1
公开(公告)日：2007-12-06
申请号：US11806888
申请日：2007-06-05
申请人： Takuji Okahisa , Kensaku Motoki , Koji Uematsu , Seiji Nakahata , Ryu Hirota , Hideyuki Ijiri , Hitoshi Kasai , Shunsuke Fujita , Fumitaka Sato , Toru Matsuoka
发明人： Takuji Okahisa , Kensaku Motoki , Koji Uematsu , Seiji Nakahata , Ryu Hirota , Hideyuki Ijiri , Hitoshi Kasai , Shunsuke Fujita , Fumitaka Sato , Toru Matsuoka
IPC分类号： C30B19/00 , C01B21/06 , H01L21/322
CPC分类号： C30B29/406 , C01B21/0632 , C01P2002/54 , C30B25/183 , H01L21/0237 , H01L21/02389 , H01L21/02395 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0257 , H01L21/02609 , H01L21/02639 , H01L21/02642
摘要： The GaN facet growth method produces defect accumulating regions H on masks by forming a dotmask or a stripemask on an undersubstrate, growing GaN in a reaction furnace in vapor phase, inducing GaN crystals on exposed parts without covering the masks, inviting facets starting from verges of the masks and producing defect accumulating regions H on the mask. The defect accumulating regions H have four versions, that is, non (O), polycrystal (P), c-axis inclining single crystal (A) and orientation inversion (J). The best is the orientation inversion region (J). A sign of occurrence of the orientation inversion regions (J) is beaks of inversion orientation appearing on facets. GaN is grown on a masked undersubstrate by supplying a carbon material at a hydrocarbon partial pressure of 10 Pa to 5 kPa for 0.5 hour to 2 hour by an HVPE facet growth method without burying facets.
摘要翻译： GaN面生长方法通过在下衬底上形成网状掩模或剥离掩模来形成掩模上的缺陷积聚区H，在气相中在反应炉中生长GaN，在不覆盖掩模的情况下在暴露部分上诱导GaN晶体，掩模，并在掩模上产生缺陷累积区域H. 缺陷积聚区H具有四种形式，即非（O），多晶（P），c轴倾斜单晶（A）和取向反转（J）。最好的是取向反演区（J）。取向反转区域（J）的发生的标志是出现在面上的反转取向的喙。通过在没有掩埋面的HVPE刻面生长法中，通过以10Pa〜5kPa的烃分压供给0.5小时〜2小时的碳材料，在掩蔽的底基板上生长GaN。

8. 发明授权

US07589000B2 Fabrication method and fabrication apparatus of group III nitride crystal substance 有权
标题翻译： III族氮化物晶体物质的制造方法和制造装置
公开(公告)号：US07589000B2
公开(公告)日：2009-09-15
申请号：US11643675
申请日：2006-12-22
申请人： Hitoshi Kasai , Takuji Okahisa , Shunsuke Fujita , Naoki Matsumoto , Hideyuki Ijiri , Fumitaka Sato , Kensaku Motoki , Seiji Nakahata , Koji Uematsu , Ryu Hirota
发明人： Hitoshi Kasai , Takuji Okahisa , Shunsuke Fujita , Naoki Matsumoto , Hideyuki Ijiri , Fumitaka Sato , Kensaku Motoki , Seiji Nakahata , Koji Uematsu , Ryu Hirota
IPC分类号： H01L21/00
CPC分类号： H01L21/02617 , C23C16/303 , C23C16/4405 , C23C16/4488 , C30B23/02 , C30B25/02 , C30B29/403
摘要： A fabrication method of a group III nitride crystal substance includes the steps of cleaning the interior of a reaction chamber by introducing HCl gas into the reaction chamber, and vapor deposition of a group III nitride crystal substance in the cleaned reaction chamber. A fabrication apparatus of a group III nitride crystal substance includes a configuration to introduce HCl gas into the reaction chamber, and a configuration to grow a group III nitride crystal substance by HVPE. Thus, a fabrication method of a group III nitride crystal substance including the method of effectively cleaning deposits adhering inside the reaction chamber during crystal growth, and a fabrication apparatus employed in the fabrication method are provided.
摘要翻译： III族氮化物晶体物质的制造方法包括以下步骤：通过将HCl气体引入反应室来清洗反应室的内部，并将III族氮化物结晶物质气相沉积在清洁的反应室中。 III族氮化物晶体物质的制造装置包括将HCl气体引入反应室的结构，以及通过HVPE生长III族氮化物结晶物质的结构。因此，提供了包括在晶体生长期间有效清洁附着在反应室内的沉积物的方法的III族氮化物晶体物质的制造方法以及制造方法中使用的制造装置。

9. 发明申请

US20130049575A1 PHOSPHOR COMPOSITE MEMBER, LED DEVICE AND METHOD FOR MANUFACTURING PHOSPHOR COMPOSITE MEMBER 审中-公开
标题翻译：磷化合物成分，LED器件及制造磷化合物成分的方法
公开(公告)号：US20130049575A1
公开(公告)日：2013-02-28
申请号：US13696240
申请日：2011-06-29
申请人： Shunsuke Fujita , Ryota Suzuki , Tadahito Furuyama
发明人： Shunsuke Fujita , Ryota Suzuki , Tadahito Furuyama
IPC分类号： B32B17/06 , B32B37/24 , B32B33/00 , H05B33/14 , B32B18/00
CPC分类号： C09K11/02 , C03C8/08 , C03C8/14 , C04B35/44 , C04B35/645 , C04B37/042 , C04B41/009 , C04B41/5022 , C04B41/86 , C04B2111/807 , C04B2235/3225 , C04B2235/3229 , C04B2235/3418 , C04B2235/441 , C04B2235/5436 , C04B2235/6567 , C04B2235/658 , C04B2235/764 , C04B2235/81 , C04B2235/9646 , C04B2237/343 , C04B2237/58 , C04B2237/70 , C04B2237/704 , C09K11/7774 , H01L33/502 , Y10T428/24355 , C04B41/4539 , C04B41/5027 , C04B41/5053
摘要： Provided is a phosphor composite member having excellent thermal resistance, high color rendition, controllability of various chromaticities from a daylight color to a light bulb color, and high luminescence intensity. A phosphor composite member in which a sintered inorganic powder body layer containing a SnO—P2O5-based glass and an inorganic phosphor powder is formed on a surface of a ceramic base material, wherein upon irradiation with an excitation light, the ceramic base material and the sintered inorganic powder body layer emit different fluorescences having different wavelengths.
摘要翻译：提供了具有优异的耐热性，高显色性，从日光颜色到灯泡颜色的各种色度的可控性以及高发光强度的荧光体复合部件。在陶瓷基材的表面上形成含有SnO-P 2 O 5系玻璃和无机荧光体粉末的烧结无机粉体层的荧光体复合部件，其中，在用激发光照射时，陶瓷基材和烧结无机粉末体层发射具有不同波长的不同荧光。

10. 发明申请

US20110006329A1 WAVELENGTH CONVERSION MEMBER AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：波长转换构件及其制造方法
公开(公告)号：US20110006329A1
公开(公告)日：2011-01-13
申请号：US12866922
申请日：2009-01-28
申请人： Shunsuke Fujita , Yoshio Umayahara , Akihiko Sakamoto
发明人： Shunsuke Fujita , Yoshio Umayahara , Akihiko Sakamoto
IPC分类号： H01L33/50 , B29D11/00 , C09K19/02 , B32B3/30 , B32B17/10 , G02B1/00
CPC分类号： C03C12/00 , C03B19/06 , C03B32/005 , C03B2201/70 , C03C3/19 , C03C14/006 , C03C2214/16 , H01L33/501 , H01L33/505 , H01L2933/0041 , Y10T428/1036 , Y10T428/24479 , Y10T428/2457 , Y10T428/24612
摘要： To provide a wavelength conversion member having good surface accuracy and dimensional accuracy even when processed in various shapes, and a method for manufacturing the same. A method for manufacturing a wavelength conversion member, including the steps of: subjecting a preform made of a powder mixture containing a glass powder and an inorganic phosphor powder to heat treatment, thereby obtaining a sintered powder product; and re-press molding the sintered powder product with a die.
摘要翻译：为了提供即使在各种形状的处理时也具有良好的表面精度和尺寸精度的波长转换构件及其制造方法。一种制造波长转换部件的方法，包括以下步骤：对由玻璃粉末和无机荧光体粉末组成的粉末混合物制成的预制件进行热处理，从而获得烧结粉末产品; 并用模具再次压制烧结粉末产品。

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