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    • 2. 发明授权
    • Wafer dividing method
    • 晶圆分割法
    • US07179722B2
    • 2007-02-20
    • US11047619
    • 2005-02-02
    • Masahiro MurataYusuke NagaiYukio MorishigeSatoshi KobayashiNaoki Ohmiya
    • Masahiro MurataYusuke NagaiYukio MorishigeSatoshi KobayashiNaoki Ohmiya
    • H01L21/301
    • H01L21/3043H01L21/30625H01L21/78H01L2221/68336
    • A method of dividing, along dividing lines, a wafer having function elements formed in areas sectioned by the dividing lines formed in a lattice pattern on the front surface, which comprises: a protective member affixing step for affixing a protective member to the front surface of the wafer; a polishing step for polishing the back surface of the wafer having the protective member affixed to the front surface; a deteriorated layer formation step for forming a deteriorated layer along the dividing lines in the inside of the wafer by applying a pulse laser beam capable of passing through the wafer to the wafer along the dividing lines from the polished back surface side of the wafer; a frame holding step for affixing the back surface of the wafer in which the deteriorated layers have been formed along the dividing lines, to a dicing tape mounted on an annular frame; a dividing step for dividing the wafer into individual chips along the dividing lines by exerting external force along the dividing lines where the deteriorated layers have been formed, of the wafer held on the frame; an expansion step for enlarging the interval between chips by stretching the dicing tape affixed to the wafer divided into individual chips; and a pick up step for picking up the chips from the stretched dicing tape.
    • 沿着划分线划分具有由在前表面上形成为格子图案的分割线划分的区域中形成的功能元件的晶片的方法,该方法包括:保护构件固定步骤,用于将保护构件固定到 晶圆; 抛光步骤,用于抛光具有固定到前表面的保护构件的晶片的背面; 劣化层形成步骤,通过沿晶片的抛光后表面侧沿分割线施加能够穿过晶片的脉冲激光束,沿着晶片内部的分割线形成劣化层; 用于将已经形成有劣化层的晶片的背面沿分割线固定到安装在环形框架上的切割带的框架保持步骤; 分割步骤,通过沿保持在框架上的晶片沿已经形成有劣化层的划分线施加外力沿分割线将晶片分割成单个芯片; 扩展步骤,用于通过拉伸固定到划分成单个芯片的晶片上的切割带来扩大芯片之间的间隔; 以及从拉伸的切割胶带拾取芯片的拾取步骤。
    • 9. 发明授权
    • Wafer dividing method
    • 晶圆分割法
    • US07449396B2
    • 2008-11-11
    • US11047585
    • 2005-02-02
    • Masahiro MurataYusuke NagaiYukio MorishigeSatoshi KobayashiNaoki Ohmiya
    • Masahiro MurataYusuke NagaiYukio MorishigeSatoshi KobayashiNaoki Ohmiya
    • H01L21/301
    • H01L21/6836B23K26/40B23K26/57B23K2101/40B23K2103/50B28D5/0011B28D5/0052H01L21/78H01L2221/68327
    • A method of dividing, along dividing lines, a wafer having function elements formed in areas sectioned by the dividing lines formed in a lattice pattern on the front surface, comprising: a frame holding step for affixing the back surface of the wafer to a dicing tape mounted on an annular frame; a deteriorated layer forming step for forming a deteriorated layer along the dividing lines in the inside of the wafer by applying a pulse laser beam capable of passing through the wafer to the wafer along the dividing lines, from the side of the front surface of the wafer held on the frame; a dividing step for dividing the wafer into individual chips along the dividing lines by exerting external force along the dividing lines where the deteriorated layers have been formed of the wafer held on the frame; an expansion step for enlarging the interval between chips by stretching the dicing tape affixed to the wafer divided into individual chips; and a picking up step for picking up each chip from the expanded dicing tape.
    • 沿着分割线划分具有由在前表面上以格子图案形成的分割线划分的区域中形成的功能元件的晶片的方法,包括:框架保持步骤,用于将晶片的背面固定到切割带 安装在环形框架上; 劣化层形成步骤,用于通过从晶片的前表面侧沿分割线施加能够穿过晶片的脉冲激光束沿晶片内部的分割线形成劣化层; 在框架上举行 分割步骤,通过沿着由保持在框架上的晶片形成劣化层的分割线施加外力,沿着分割线将晶片分割成单个芯片; 扩展步骤,用于通过拉伸固定到划分成单个芯片的晶片上的切割带来扩大芯片之间的间隔; 以及用于从扩展的切割胶带拾取每个芯片的拾取步骤。