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1. 发明授权

US06967158B2 Method for forming a low-k dielectric structure on a substrate 有权
标题翻译：在衬底上形成低k电介质结构的方法
公开(公告)号：US06967158B2
公开(公告)日：2005-11-22
申请号：US10384398
申请日：2003-03-07
申请人： Yuri Solomentsev , Matthew S. Angyal , Errol Todd Ryan , Susan Gee-Young Kim
发明人： Yuri Solomentsev , Matthew S. Angyal , Errol Todd Ryan , Susan Gee-Young Kim
IPC分类号： H01L21/321 , H01L21/768 , H01L21/4763
CPC分类号： H01L21/3212 , H01L21/76829 , H01L21/7684
摘要： The present invention provides a method for forming a low-k dielectric structure on a substrate 10 that includes depositing, upon the substrate, a dielectric layer 12. A multi-film cap layer 18 is deposited upon the dielectric layer. The multi-film cap layer includes first 181 and second 182 films, with the second film being disposed between the dielectric layer and the first film. The first film typically has a removal rate associated therewith that is less than the removal rate associated with the second film. A deposition layer 20 is deposited upon the multi-film cap layer and subsequently removed. The properties of the multi-film cap layer are selected so as to prevent the dielectric layer from being exposed/removed during removal of the deposition film. In this manner, a deposition layer, having variable rates of removal, such as copper, may be planarized without damaging the underlying dielectric layer.
摘要翻译：本发明提供了一种用于在衬底10上形成低k电介质结构的方法，该方法包括在衬底上沉积介电层12.多层覆盖层18沉积在电介质层上。多层膜层包括第一和第二膜182，其中第二膜设置在电介质层和第一膜之间。第一膜通常具有与其相关联的去除速率小于与第二膜相关联的去除速率。沉积层20沉积在多膜覆盖层上并随后除去。选择多层盖层的性质，以防止在去除沉积膜期间电介质层被曝光/去除。以这种方式，可以平坦化具有可变迁移速率（例如铜）的沉积层，而不会损坏下面的介电层。

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