专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20090175109A1 CURRENT-MODE SENSE AMPLIFIER AND SENSE AMPLIFYING METHOD 有权
标题翻译：电流模式感应放大器和感应放大方法
公开(公告)号：US20090175109A1
公开(公告)日：2009-07-09
申请号：US11970545
申请日：2008-01-08
申请人： Yung-Feng Lin , Chun-Yi Lee
发明人： Yung-Feng Lin , Chun-Yi Lee
IPC分类号： G11C7/08
CPC分类号： G11C7/062 , G11C7/067 , G11C7/08 , G11C16/28 , G11C2207/063
摘要： A current-mode sense amplifier comprises a first current mirror, a second current mirror and an amplifying circuit. The first current mirror outputs a cell current to a memory cell and duplicates the cell current to generate a mirrored cell current. The second current mirror outputs a reference current to the reference cell and duplicates the reference current to generate a mirrored reference current. The amplifying circuit comprises a first switch, second switch, third switch and fourth switch. The first switch has first and second terminals for respectively receiving the mirrored cell and reference currents. The second and third switches have first terminals respectively coupled to the first and second terminals of the first switch, and control terminals respectively coupled to the second and first terminals of the first switch. The fourth switch is connected to second terminals of the second and third switches.
摘要翻译：电流模式读出放大器包括第一电流镜，第二电流镜和放大电路。第一电流镜将单元电流输出到存储单元并复制单元电流以产生镜像单元电流。第二电流镜将参考电流输出到参考单元并复制参考电流以产生镜像参考电流。放大电路包括第一开关，第二开关，第三开关和第四开关。第一开关具有用于分别接收镜像单元和参考电流的第一和第二端子。第二和第三开关具有分别耦合到第一开关的第一和第二端子的第一端子和分别耦合到第一开关的第二端子和第一端子的控制端子。第四开关连接到第二和第三开关的第二端子。

2. 发明授权

US08040734B2 Current-mode sense amplifying method 有权
标题翻译：电流模式感应放大法
公开(公告)号：US08040734B2
公开(公告)日：2011-10-18
申请号：US12767418
申请日：2010-04-26
申请人： Yung-Feng Lin , Chun-Yi Lee
发明人： Yung-Feng Lin , Chun-Yi Lee
IPC分类号： G11C11/34
CPC分类号： G11C7/062 , G11C7/067 , G11C7/08 , G11C16/28 , G11C2207/063
摘要： A sense amplifying method, applied in a memory having a memory cell and a reference cell, includes: charging the memory cell and the reference cell to have a cell current and a reference current, respectively; duplicating the cell current and the reference current to respectively generate a mirrored cell current via a first current path and a mirrored reference current via a second current path and equalizing a first voltage drop generated as the mirrored cell current flows by the first current path and a second voltage drop generated as the mirrored reference current flows by the second current path; and removing the equalization of the first voltage drop and the second voltage drop and adjusting first voltage drop and the second voltage drop according to a first current flowing by the first current path and a second current flowing by the second current path.
摘要翻译：应用于具有存储单元和参考单元的存储器中的感测放大方法包括：分别对存储单元和参考单元充电以具有单元电流和参考电流; 复制单元电流和参考电流以经由第二电流路径分别经由第一电流路径和镜像参考电流产生镜像单元电流，并且均衡由第一电流路径流动的镜像单元电流产生的第一电压降和当第二电流路径流过镜像参考电流时产生的第二电压降; 以及去除所述第一电压降和所述第二电压降的均衡，并且根据由所述第一电流路径流动的第一电流和由所述第二电流路径流动的第二电流来调节第一电压降和所述第二电压降。

3. 发明申请

US20100202213A1 Current-Mode Sense Amplifying Method 有权
标题翻译：电流模式检测放大方法
公开(公告)号：US20100202213A1
公开(公告)日：2010-08-12
申请号：US12767418
申请日：2010-04-26
申请人： Yung-Feng Lin , Chun-Yi Lee
发明人： Yung-Feng Lin , Chun-Yi Lee
IPC分类号： G11C16/06 , G11C7/06
CPC分类号： G11C7/062 , G11C7/067 , G11C7/08 , G11C16/28 , G11C2207/063
摘要： A sense amplifying method, applied in a memory having a memory cell and a reference cell, includes: charging the memory cell and the reference cell to have a cell current and a reference current, respectively; duplicating the cell current and the reference current to respectively generate a mirrored cell current via a first current path and a mirrored reference current via a second current path and equalizing a first voltage drop generated as the mirrored cell current flows by the first current path and a second voltage drop generated as the mirrored reference current flows by the second current path; and removing the equalization of the first voltage drop and the second voltage drop and adjusting first voltage drop and the second voltage drop according to a first current flowing by the first current path and a second current flowing by the second current path.
摘要翻译：应用于具有存储单元和参考单元的存储器中的感测放大方法包括：分别对存储单元和参考单元充电以具有单元电流和参考电流; 复制单元电流和参考电流以经由第二电流路径分别经由第一电流路径和镜像参考电流产生镜像单元电流，并且均衡由第一电流路径流动的镜像单元电流产生的第一电压降和当第二电流路径流过镜像参考电流时产生的第二电压降; 以及去除所述第一电压降和所述第二电压降的均衡，并且根据由所述第一电流路径流动的第一电流和由所述第二电流路径流动的第二电流来调节第一电压降和所述第二电压降。

4. 发明申请

US20090116293A1 Memory and method for charging a word line thereof 有权
标题翻译：用于对其字线进行充电的存储器和方法
公开(公告)号：US20090116293A1
公开(公告)日：2009-05-07
申请号：US11976975
申请日：2007-10-30
申请人： Chun-Yi Lee , Yung-Feng Lin , Kuen-Long Chang , Chun-Hsiung Hung
发明人： Chun-Yi Lee , Yung-Feng Lin , Kuen-Long Chang , Chun-Hsiung Hung
IPC分类号： G11C16/06 , G11C8/08 , G11C5/02
CPC分类号： G11C8/08 , G11C8/14 , G11C16/08
摘要： A memory and method for charging a word line thereof are disclosed. The memory includes a first word line driver, a first word line and a first switch. The first word line driver is connected to a first operational voltage for receiving a first control signal. The first word line comprises a start terminal connected to an output terminal of the first word line driver. The first switch is connected to a second operational voltage and an end terminal of the first word line. The second operational voltage is not smaller than the first operational voltage. When the first word line driver is controlled by the first control signal to start charging up the first word line, the first switch is simultaneously turned on to provide another charging path for the first word line until the first word line is charged to the first operational voltage.
摘要翻译：公开了一种用于对其字线进行充电的存储器和方法。存储器包括第一字线驱动器，第一字线和第一开关。第一字线驱动器连接到用于接收第一控制信号的第一操作电压。第一字线包括连接到第一字线驱动器的输出端的起始端。第一开关连接到第一字线的第二工作电压和端子。第二工作电压不小于第一工作电压。当第一字线驱动器由第一控制信号控制以开始向第一字线充电时，第一开关同时导通，以为第一字线提供另一充电路径，直到第一字线被充电到第一操作电压。

5. 发明授权

US08411509B2 Memory and method for charging a word line thereof 有权
公开(公告)号：US08411509B2
公开(公告)日：2013-04-02
申请号：US11976975
申请日：2007-10-30
申请人： Chun-Yi Lee , Yung-Feng Lin , Kuen-Long Chang , Chun-Hsiung Hung
发明人： Chun-Yi Lee , Yung-Feng Lin , Kuen-Long Chang , Chun-Hsiung Hung
IPC分类号： G11C11/34
CPC分类号： G11C8/08 , G11C8/14 , G11C16/08
摘要： A memory and method for charging a word line thereof are disclosed. The memory includes a first word line driver, a first word line and a first switch. The first word line driver is connected to a first operational voltage for receiving a first control signal. The first word line comprises a start terminal connected to an output terminal of the first word line driver. The first switch is connected to a second operational voltage and an end terminal of the first word line. The second operational voltage is not smaller than the first operational voltage. When the first word line driver is controlled by the first control signal to start charging up the first word line, the first switch is simultaneously turned on to provide another charging path for the first word line until the first word line is charged to the first operational voltage.

6. 发明授权

US07724595B2 Current-mode sense amplifier and sense amplifying method 有权
标题翻译：电流模式读出放大器和感测放大法
公开(公告)号：US07724595B2
公开(公告)日：2010-05-25
申请号：US11970545
申请日：2008-01-08
申请人： Yung-Feng Lin , Chun-Yi Lee
发明人： Yung-Feng Lin , Chun-Yi Lee
IPC分类号： G11C7/02
CPC分类号： G11C7/062 , G11C7/067 , G11C7/08 , G11C16/28 , G11C2207/063
摘要： A current-mode sense amplifier comprises a first current mirror, a second current mirror and an amplifying circuit. The first current mirror outputs a cell current to a memory cell and duplicates the cell current to generate a mirrored cell current. The second current mirror outputs a reference current to the reference cell and duplicates the reference current to generate a mirrored reference current. The amplifying circuit comprises a first switch, second switch, third switch and fourth switch. The first switch has first and second terminals for respectively receiving the mirrored cell and reference currents. The second and third switches have first terminals respectively coupled to the first and second terminals of the first switch, and control terminals respectively coupled to the second and first terminals of the first switch. The fourth switch is connected to second terminals of the second and third switches.
摘要翻译：电流模式读出放大器包括第一电流镜，第二电流镜和放大电路。第一电流镜将单元电流输出到存储单元并复制单元电流以产生镜像单元电流。第二电流镜将参考电流输出到参考单元并复制参考电流以产生镜像参考电流。放大电路包括第一开关，第二开关，第三开关和第四开关。第一开关具有用于分别接收镜像单元和参考电流的第一和第二端子。第二和第三开关具有分别耦合到第一开关的第一和第二端子的第一端子和分别耦合到第一开关的第二端子和第一端子的控制端子。第四开关连接到第二和第三开关的第二端子。

7. 发明授权

US08664648B2 N-type organic thin film transistor, ambipolar field-effect transistor, and method of fabricating the same 有权
标题翻译： N型有机薄膜晶体管，双极场效应晶体管及其制造方法
公开(公告)号：US08664648B2
公开(公告)日：2014-03-04
申请号：US13425284
申请日：2012-03-20
申请人： Jenn-Chang Hwang , Li-Shiuan Tsai , Chun-Yi Lee , Cheng-Lun Tsai
发明人： Jenn-Chang Hwang , Li-Shiuan Tsai , Chun-Yi Lee , Cheng-Lun Tsai
IPC分类号： H01L35/24
CPC分类号： H01L51/0055 , B82Y10/00 , H01L28/40 , H01L51/0046 , H01L51/0053 , H01L51/0093 , H01L51/052 , H01L51/0545 , H01L51/0562
摘要： An N-type organic thin film transistor, an ambipolar field-effect transistor, and methods of fabricating the same are disclosed. The N-type organic thin film transistor of the present invention comprises: a substrate; a gate electrode locating on the substrate; a gate-insulating layer covering the gate electrode, and the gate-insulating layer is made of silk protein; a buffering layer locating on the gate-insulating layer, and the buffering layer is made of pentacene; an N-type organic semiconductor layer locating on the buffering layer; and a source and a drain electrode, wherein the N-type organic semiconductor layer, the buffering layer, the source and the drain electrode are disposed over the gate dielectric layer.
摘要翻译：公开了一种N型有机薄膜晶体管，双极场效应晶体管及其制造方法。本发明的N型有机薄膜晶体管包括：基板; 位于基板上的栅电极; 覆盖栅电极的栅极绝缘层，栅绝缘层由丝蛋白制成; 位于栅极绝缘层上的缓冲层，缓冲层由并五苯制成; 位于缓冲层上的N型有机半导体层; 以及源极和漏极，其中所述N型有机半导体层，所述缓冲层，所述源极和漏极被设置在所述栅极介电层上。

8. 发明授权

US08361866B2 Modifying work function in PMOS devices by counter-doping 有权
公开(公告)号：US08361866B2
公开(公告)日：2013-01-29
申请号：US13204461
申请日：2011-08-05
申请人： Chun-Yi Lee , Harry Chuang , Ping-Wei Wang , Kong-Beng Thei
发明人： Chun-Yi Lee , Harry Chuang , Ping-Wei Wang , Kong-Beng Thei
IPC分类号： H01L21/8234
CPC分类号： H01L27/0883 , G11C11/412 , H01L27/092 , H01L27/105 , H01L27/11 , H01L27/1104 , H01L27/1116 , H01L29/1083 , H01L29/165 , H01L29/6656 , H01L29/6659 , H01L29/66636 , H01L29/7833 , H01L29/7848 , Y10S438/919
摘要： A semiconductor structure comprising an SRAM/inverter cell and a method for forming the same are provided, wherein the SRAM/inverter cell has an improved write margin. The SRAM/inverter cell includes a pull-up PMOS device comprising a gate dielectric over the semiconductor substrate, a gate electrode on the gate dielectric wherein the gate electrode comprises a p-type impurity and an n-type impurity, and a stressor formed in a source/drain region. The device drive current of the pull-up PMOS device is reduced due to the counter-doping of the gate electrode.

9. 发明授权

US08203896B2 Memory chip and method for operating the same 有权
标题翻译：内存芯片及其操作方法
公开(公告)号：US08203896B2
公开(公告)日：2012-06-19
申请号：US12911173
申请日：2010-10-25
申请人： Kuen-Long Chang , Chun-Hsiung Hung , Chuan-Ying Yu , Chun-Yi Lee
发明人： Kuen-Long Chang , Chun-Hsiung Hung , Chuan-Ying Yu , Chun-Yi Lee
IPC分类号： G11C7/00 , G11C11/50 , G11C7/04
CPC分类号： G11C29/022 , G11C29/02
摘要： A memory chip and method for operating the same are provided. The memory chip includes a number of pads. The method includes inputting a number of first test signals to the pads respectively, wherein the first test signals corresponding to two physically-adjacent pads are complementary; inputting a number of second test signals, respectively successive to the first test signals, to the pads, wherein the first test signal and the second test signal corresponding to each of the pads are complementary; and outputting expected data from the memory chip if the first test signals and the second test signals are successfully received by the memory chip.
摘要翻译：提供了一种存储芯片及其操作方法。存储器芯片包括多个焊盘。该方法包括分别将多个第一测试信号输入到焊盘，其中对应于两个物理相邻的焊盘的第一测试信号是互补的; 将多个分别连续到第一测试信号的第二测试信号输入到焊盘，其中对应于每个焊盘的第一测试信号和第二测试信号是互补的; 以及如果所述第一测试信号和所述第二测试信号被所述存储芯片成功接收，则从所述存储器芯片输出预期数据。

10. 发明申请

US20120073630A1 RECTANGULAR PROTECTIVE FRAME FOR SOLAR CELL MODULE 审中-公开
标题翻译：太阳能电池模块的矩形保护框架
公开(公告)号：US20120073630A1
公开(公告)日：2012-03-29
申请号：US12891955
申请日：2010-09-28
申请人： Woei-Yuan WU , Chun-Yi Lee
发明人： Woei-Yuan WU , Chun-Yi Lee
IPC分类号： H01L31/048
CPC分类号： H02S30/10 , F24S25/20
摘要： A rectangular protective frame for a solar cell module is disclosed. The rectangular protective frame for a solar cell module includes: four bar elements, each including: a supporting portion, having an L-shape cross-section, encompassing edges of the solar cell module for supporting the solar cell module; and a body portion, having a rectangular cross-section with a long side connected to the supporting portion for increasing strength of the supporting portion. The rectangular protective frame also includes at least one carrying mechanism, connected to a short side of the body portion of at least one of the four bar elements, having an L-shape cross-section, for preventing fingers from slipping off while carrying the rectangular protective frame.
摘要翻译：公开了一种用于太阳能电池模块的矩形保护框架。太阳能电池模块的矩形保护框架包括：四个杆元件，每个包括：具有L形横截面的支撑部分，用于支撑太阳能电池模块的太阳能电池模块的边缘; 以及主体部分，具有矩形横截面，其长边连接到支撑部分，用于增加支撑部分的强度。矩形保护框架还包括至少一个承载机构，其连接到四个杆元件中的至少一个的主体部分的短边，具有L形横截面，用于防止手指在携带矩形时防止滑落防护框架

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式