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1. 发明授权

US08040734B2 Current-mode sense amplifying method 有权
标题翻译：电流模式感应放大法
公开(公告)号：US08040734B2
公开(公告)日：2011-10-18
申请号：US12767418
申请日：2010-04-26
申请人： Yung-Feng Lin , Chun-Yi Lee
发明人： Yung-Feng Lin , Chun-Yi Lee
IPC分类号： G11C11/34
CPC分类号： G11C7/062 , G11C7/067 , G11C7/08 , G11C16/28 , G11C2207/063
摘要： A sense amplifying method, applied in a memory having a memory cell and a reference cell, includes: charging the memory cell and the reference cell to have a cell current and a reference current, respectively; duplicating the cell current and the reference current to respectively generate a mirrored cell current via a first current path and a mirrored reference current via a second current path and equalizing a first voltage drop generated as the mirrored cell current flows by the first current path and a second voltage drop generated as the mirrored reference current flows by the second current path; and removing the equalization of the first voltage drop and the second voltage drop and adjusting first voltage drop and the second voltage drop according to a first current flowing by the first current path and a second current flowing by the second current path.
摘要翻译：应用于具有存储单元和参考单元的存储器中的感测放大方法包括：分别对存储单元和参考单元充电以具有单元电流和参考电流; 复制单元电流和参考电流以经由第二电流路径分别经由第一电流路径和镜像参考电流产生镜像单元电流，并且均衡由第一电流路径流动的镜像单元电流产生的第一电压降和当第二电流路径流过镜像参考电流时产生的第二电压降; 以及去除所述第一电压降和所述第二电压降的均衡，并且根据由所述第一电流路径流动的第一电流和由所述第二电流路径流动的第二电流来调节第一电压降和所述第二电压降。

2. 发明申请

US20090175109A1 CURRENT-MODE SENSE AMPLIFIER AND SENSE AMPLIFYING METHOD 有权
标题翻译：电流模式感应放大器和感应放大方法
公开(公告)号：US20090175109A1
公开(公告)日：2009-07-09
申请号：US11970545
申请日：2008-01-08
申请人： Yung-Feng Lin , Chun-Yi Lee
发明人： Yung-Feng Lin , Chun-Yi Lee
IPC分类号： G11C7/08
CPC分类号： G11C7/062 , G11C7/067 , G11C7/08 , G11C16/28 , G11C2207/063
摘要： A current-mode sense amplifier comprises a first current mirror, a second current mirror and an amplifying circuit. The first current mirror outputs a cell current to a memory cell and duplicates the cell current to generate a mirrored cell current. The second current mirror outputs a reference current to the reference cell and duplicates the reference current to generate a mirrored reference current. The amplifying circuit comprises a first switch, second switch, third switch and fourth switch. The first switch has first and second terminals for respectively receiving the mirrored cell and reference currents. The second and third switches have first terminals respectively coupled to the first and second terminals of the first switch, and control terminals respectively coupled to the second and first terminals of the first switch. The fourth switch is connected to second terminals of the second and third switches.
摘要翻译：电流模式读出放大器包括第一电流镜，第二电流镜和放大电路。第一电流镜将单元电流输出到存储单元并复制单元电流以产生镜像单元电流。第二电流镜将参考电流输出到参考单元并复制参考电流以产生镜像参考电流。放大电路包括第一开关，第二开关，第三开关和第四开关。第一开关具有用于分别接收镜像单元和参考电流的第一和第二端子。第二和第三开关具有分别耦合到第一开关的第一和第二端子的第一端子和分别耦合到第一开关的第二端子和第一端子的控制端子。第四开关连接到第二和第三开关的第二端子。

3. 发明申请

US20100202213A1 Current-Mode Sense Amplifying Method 有权
标题翻译：电流模式检测放大方法
公开(公告)号：US20100202213A1
公开(公告)日：2010-08-12
申请号：US12767418
申请日：2010-04-26
申请人： Yung-Feng Lin , Chun-Yi Lee
发明人： Yung-Feng Lin , Chun-Yi Lee
IPC分类号： G11C16/06 , G11C7/06
CPC分类号： G11C7/062 , G11C7/067 , G11C7/08 , G11C16/28 , G11C2207/063
摘要： A sense amplifying method, applied in a memory having a memory cell and a reference cell, includes: charging the memory cell and the reference cell to have a cell current and a reference current, respectively; duplicating the cell current and the reference current to respectively generate a mirrored cell current via a first current path and a mirrored reference current via a second current path and equalizing a first voltage drop generated as the mirrored cell current flows by the first current path and a second voltage drop generated as the mirrored reference current flows by the second current path; and removing the equalization of the first voltage drop and the second voltage drop and adjusting first voltage drop and the second voltage drop according to a first current flowing by the first current path and a second current flowing by the second current path.
摘要翻译：应用于具有存储单元和参考单元的存储器中的感测放大方法包括：分别对存储单元和参考单元充电以具有单元电流和参考电流; 复制单元电流和参考电流以经由第二电流路径分别经由第一电流路径和镜像参考电流产生镜像单元电流，并且均衡由第一电流路径流动的镜像单元电流产生的第一电压降和当第二电流路径流过镜像参考电流时产生的第二电压降; 以及去除所述第一电压降和所述第二电压降的均衡，并且根据由所述第一电流路径流动的第一电流和由所述第二电流路径流动的第二电流来调节第一电压降和所述第二电压降。

4. 发明申请

US20090116293A1 Memory and method for charging a word line thereof 有权
标题翻译：用于对其字线进行充电的存储器和方法
公开(公告)号：US20090116293A1
公开(公告)日：2009-05-07
申请号：US11976975
申请日：2007-10-30
申请人： Chun-Yi Lee , Yung-Feng Lin , Kuen-Long Chang , Chun-Hsiung Hung
发明人： Chun-Yi Lee , Yung-Feng Lin , Kuen-Long Chang , Chun-Hsiung Hung
IPC分类号： G11C16/06 , G11C8/08 , G11C5/02
CPC分类号： G11C8/08 , G11C8/14 , G11C16/08
摘要： A memory and method for charging a word line thereof are disclosed. The memory includes a first word line driver, a first word line and a first switch. The first word line driver is connected to a first operational voltage for receiving a first control signal. The first word line comprises a start terminal connected to an output terminal of the first word line driver. The first switch is connected to a second operational voltage and an end terminal of the first word line. The second operational voltage is not smaller than the first operational voltage. When the first word line driver is controlled by the first control signal to start charging up the first word line, the first switch is simultaneously turned on to provide another charging path for the first word line until the first word line is charged to the first operational voltage.
摘要翻译：公开了一种用于对其字线进行充电的存储器和方法。存储器包括第一字线驱动器，第一字线和第一开关。第一字线驱动器连接到用于接收第一控制信号的第一操作电压。第一字线包括连接到第一字线驱动器的输出端的起始端。第一开关连接到第一字线的第二工作电压和端子。第二工作电压不小于第一工作电压。当第一字线驱动器由第一控制信号控制以开始向第一字线充电时，第一开关同时导通，以为第一字线提供另一充电路径，直到第一字线被充电到第一操作电压。

5. 发明授权

US08411509B2 Memory and method for charging a word line thereof 有权
公开(公告)号：US08411509B2
公开(公告)日：2013-04-02
申请号：US11976975
申请日：2007-10-30
申请人： Chun-Yi Lee , Yung-Feng Lin , Kuen-Long Chang , Chun-Hsiung Hung
发明人： Chun-Yi Lee , Yung-Feng Lin , Kuen-Long Chang , Chun-Hsiung Hung
IPC分类号： G11C11/34
CPC分类号： G11C8/08 , G11C8/14 , G11C16/08
摘要： A memory and method for charging a word line thereof are disclosed. The memory includes a first word line driver, a first word line and a first switch. The first word line driver is connected to a first operational voltage for receiving a first control signal. The first word line comprises a start terminal connected to an output terminal of the first word line driver. The first switch is connected to a second operational voltage and an end terminal of the first word line. The second operational voltage is not smaller than the first operational voltage. When the first word line driver is controlled by the first control signal to start charging up the first word line, the first switch is simultaneously turned on to provide another charging path for the first word line until the first word line is charged to the first operational voltage.

6. 发明授权

US07724595B2 Current-mode sense amplifier and sense amplifying method 有权
标题翻译：电流模式读出放大器和感测放大法
公开(公告)号：US07724595B2
公开(公告)日：2010-05-25
申请号：US11970545
申请日：2008-01-08
申请人： Yung-Feng Lin , Chun-Yi Lee
发明人： Yung-Feng Lin , Chun-Yi Lee
IPC分类号： G11C7/02
CPC分类号： G11C7/062 , G11C7/067 , G11C7/08 , G11C16/28 , G11C2207/063
摘要： A current-mode sense amplifier comprises a first current mirror, a second current mirror and an amplifying circuit. The first current mirror outputs a cell current to a memory cell and duplicates the cell current to generate a mirrored cell current. The second current mirror outputs a reference current to the reference cell and duplicates the reference current to generate a mirrored reference current. The amplifying circuit comprises a first switch, second switch, third switch and fourth switch. The first switch has first and second terminals for respectively receiving the mirrored cell and reference currents. The second and third switches have first terminals respectively coupled to the first and second terminals of the first switch, and control terminals respectively coupled to the second and first terminals of the first switch. The fourth switch is connected to second terminals of the second and third switches.
摘要翻译：电流模式读出放大器包括第一电流镜，第二电流镜和放大电路。第一电流镜将单元电流输出到存储单元并复制单元电流以产生镜像单元电流。第二电流镜将参考电流输出到参考单元并复制参考电流以产生镜像参考电流。放大电路包括第一开关，第二开关，第三开关和第四开关。第一开关具有用于分别接收镜像单元和参考电流的第一和第二端子。第二和第三开关具有分别耦合到第一开关的第一和第二端子的第一端子和分别耦合到第一开关的第二端子和第一端子的控制端子。第四开关连接到第二和第三开关的第二端子。

7. 发明申请

US20130277750A1 Semiconductor Device and Method for Forming Same 有权
公开(公告)号：US20130277750A1
公开(公告)日：2013-10-24
申请号：US13451261
申请日：2012-04-19
申请人： Jui-Yao Lai , Chun-Yi Lee , Shyh-Wei Wang , Yen-Ming Chen
发明人： Jui-Yao Lai , Chun-Yi Lee , Shyh-Wei Wang , Yen-Ming Chen
IPC分类号： H01L27/06 , H01L27/08
CPC分类号： H01L28/24 , H01L21/823842 , H01L23/5228 , H01L27/0629 , H01L27/0802 , H01L28/20 , H01L29/0649 , H01L29/0847 , H01L2924/0002 , H01L2924/00
摘要： A system and method for forming a resistor system is provided. An embodiment comprises a resistor formed in a U-shape. The resistor may comprise multiple layers of conductive materials, with a dielectric layer filling the remainder of the U-shape. The resistor may be integrated with a dual metal gate manufacturing process or may be integrated with multiple types of resistors.

8. 发明申请

US20110297044A1 OLIGOANILINE EXFOLIATING AGENTS, EXFOLIATED PLATELET-SHAPED CLAY COMPRISING THE EXFOLIATING AGENT AND PREPARATION THEREOF 审中-公开
标题翻译：异氰脲酸衍生物，包含异构体的异型板形粘土及其制备
公开(公告)号：US20110297044A1
公开(公告)日：2011-12-08
申请号：US12951668
申请日：2010-11-22
申请人： Tsung-Yen TSAI , Chun-Yi Lee
发明人： Tsung-Yen TSAI , Chun-Yi Lee
IPC分类号： C04B14/00 , C07C211/54
CPC分类号： C04B14/206
摘要： In an embodiment, an oligoaniline exfoliating agent, as shown in Formula (I), is provided. In Formula (I), R is —H or —NH2, and n is 3 to 30. In another embodiment, exfoliated platelet-shaped clay including the oligoaniline exfoliating agent and a method for preparing the exfoliated platelet-shaped clay are provided.
摘要翻译：在一个实施方案中，提供如式（I）所示的寡苯胺去角质剂。在式（I）中，R为-H或-NH 2，n为3至30.在另一个实施方案中，提供了包含低聚苯胺去角质剂的剥离片状粘土和制备剥离的片状粘土的方法。

9. 发明授权

US08041912B2 Memory devices with data protection 有权
标题翻译：具有数据保护功能的内存设备
公开(公告)号：US08041912B2
公开(公告)日：2011-10-18
申请号：US11863254
申请日：2007-09-28
申请人： Yu-Lan Kuo , Chun-Yi Lee , Kuen-Long Chang , Chun-Hsiung Hung
发明人： Yu-Lan Kuo , Chun-Yi Lee , Kuen-Long Chang , Chun-Hsiung Hung
IPC分类号： G06F12/00
CPC分类号： G11C8/20 , G06F21/79 , G11C16/22
摘要： A memory device comprises a memory array, a status register coupled with the memory array, and a security register coupled with the memory array and the status register. The memory array contains a number of memory blocks configured to have independent access control. The status register includes at least one protection bit indicative of a write-protection status of at least one corresponding block of the memory blocks that corresponds to the protection bit. The security register includes at least one register-protection bit. The register-protection bit is programmable to a memory-protection state for preventing a state change of at least the protection bit of the status register. The register-protection bit is configured to remain in the memory-protection state until the resetting of the memory device.
摘要翻译：存储器件包括存储器阵列，与存储器阵列耦合的状态寄存器，以及与存储器阵列和状态寄存器耦合的安全寄存器。存储器阵列包含被配置为具有独立访问控制的多个存储器块。状态寄存器包括至少一个保护位，指示对应于保护位的存储器块的至少一个相应块的写保护状态。安全寄存器包括至少一个寄存器保护位。寄存器保护位可编程为存储器保护状态，以防止至少状态寄存器的保护位的状态改变。寄存器保护位被配置为保持存储器保护状态，直到存储器件的复位。

10. 发明授权

US08035417B1 Output buffer circuit with variable drive strength 有权
标题翻译：具有可变驱动强度的输出缓冲电路
公开(公告)号：US08035417B1
公开(公告)日：2011-10-11
申请号：US12843452
申请日：2010-07-26
申请人： Chun-Hsiung Hung , Chun-Yi Lee
发明人： Chun-Hsiung Hung , Chun-Yi Lee
IPC分类号： H03K19/094
CPC分类号： H03K19/018521 , H03K19/018528
摘要： An output buffer circuit has a variable output drive strength, depending on a buffer enable signal. Multiple output buffer circuits have a variable combined output drive strength, depending on a set of buffer enable signals.
摘要翻译：根据缓冲器使能信号，输出缓冲电路具有可变的输出驱动强度。多个输出缓冲电路具有可变的组合输出驱动强度，这取决于一组缓冲器使能信号。

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