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1. 发明授权

US07078256B2 Nitride semiconductor LED improved in lighting efficiency and fabrication method thereof 失效
公开(公告)号：US07078256B2
公开(公告)日：2006-07-18
申请号：US10875321
申请日：2004-06-25
申请人： Yung Ho Ryu , Kee Jeong Yang , Bang Won Oh , Jin Sub Park , Young Hoon Kim
发明人： Yung Ho Ryu , Kee Jeong Yang , Bang Won Oh , Jin Sub Park , Young Hoon Kim
IPC分类号： H01L21/00
CPC分类号： H01L33/007
摘要： A nitride semiconductor LED improved in lighting efficiency and a fabrication method thereof, in which an n-doped semiconductor layer is formed on a substrate. An active layer is formed on the n-doped semiconductor layer to expose at least a partial area of the n-doped semiconductor layer. A p-doped semiconductor layer is formed on the active layer. A p+-doped semiconductor layer is formed on the p-doped semiconductor layer. An n+-doped semiconductor layer is formed in at least a partial upper region of the p+-doped semiconductor layer via n-dopant ion implantation. The n+-doped semiconductor layer cooperates with an underlying partial region of the p+-doped semiconductor layer to realize a reverse bias tunneling junction. Also, an upper n-doped semiconductor layer is formed on the n+-doped semiconductor layer to realize lateral current spreading. The invention can improve lighting efficiency by using the reverse bias tunneling junction and/or the lateral current spreading.

2. 发明授权

US07906785B2 Vertical type nitride semiconductor light emitting device and method of manufacturing the same 失效
标题翻译：垂直型氮化物半导体发光器件及其制造方法
公开(公告)号：US07906785B2
公开(公告)日：2011-03-15
申请号：US11585212
申请日：2006-10-24
申请人： Doo Go Baik , Bang Won Oh , Tae Jun Kim
发明人： Doo Go Baik , Bang Won Oh , Tae Jun Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/145 , H01L33/0033 , H01L33/32
摘要： A vertical nitride semiconductor light emitting device and a manufacturing method thereof are provided. In the device, an ohmic contact layer, a p-type nitride semiconductor layer, an active layer, an n-type nitride semiconductor layer and an n-electrode are sequentially formed on a conductive substrate. At least one of a surface of the p-type nitride semiconductor layer contacting the ohmic contact layer and a surface of the n-type nitride layer contacting the n-electrode has a high resistance area of damaged nitride single crystal in a substantially central portion thereof. The high resistance area has a Schottky junction with at least one of the ohmic contact layer and the n-electrode.
摘要翻译：提供了一种垂直氮化物半导体发光器件及其制造方法。在该器件中，在导电性基板上依次形成欧姆接触层，p型氮化物半导体层，有源层，n型氮化物半导体层和n电极。接触欧姆接触层的p型氮化物半导体层的表面和与n电极接触的n型氮化物层的表面中的至少一个在其基本中心部分具有高的受损氮化物单晶的电阻面积。高电阻区域具有与欧姆接触层和n电极中的至少一个的肖特基结。

3. 发明授权

US06703677B2 Submount integrated photodiode and laser diode package using the same 失效
标题翻译： Submount集成光电二极管和激光二极管封装使用相同
公开(公告)号：US06703677B2
公开(公告)日：2004-03-09
申请号：US10231029
申请日：2002-08-30
申请人： Kyung Ho Lee , Jeong Ho Yoon , Bang Won Oh , Si Young Yang , Jong Hwa Lee
发明人： Kyung Ho Lee , Jeong Ho Yoon , Bang Won Oh , Si Young Yang , Jong Hwa Lee
IPC分类号： H01L2714
CPC分类号： H01S5/02212 , H01S5/02248 , H01S5/02272 , Y10S257/918
摘要： Disclosed is a submount integrated photodiode package with an improved metal layer configuration and laser diode package using the same. In particular, a unitary laser diode of the invention provides a light receiving area overlying a semiconductor substrate to correspond to a radiation area of light emitted from a laser diode so as to reduce chip size in respect to a conventional one while maintaining a monitoring current identical to the conventional one as well as improve heat-radiating features. The invention provides a unitary laser diode package which comprises a light receiving area overlying a semiconductor substrate and having the same configuration as a radiation area of emission light from the laser diode and a metal layer adjacent to the light receiving area.
摘要翻译：公开了一种具有改进的金属层配置和使用其的激光二极管封装的基座集成光电二极管封装。特别地，本发明的单一激光二极管提供了覆盖半导体衬底的光接收区域，以对应于从激光二极管发射的光的辐射面积，以便相对于常规光源减小芯片尺寸，同时保持监视电流相同以及改善散热特征。本发明提供了一种单一的激光二极管封装，其包括覆盖半导体衬底并具有与来自激光二极管的发射光的辐射面积和与光接收区域相邻的金属层的相同配置的光接收区域。

4. 发明授权

US07695989B2 Method of manufacturing vertical gallium-nitride based light emitting diode 有权
标题翻译：制造垂直氮化镓基发光二极管的方法
公开(公告)号：US07695989B2
公开(公告)日：2010-04-13
申请号：US12406540
申请日：2009-03-18
申请人： Doo Go Baik , Bang Won Oh , Seok Beom Choi , Su Yeol Lee
发明人： Doo Go Baik , Bang Won Oh , Seok Beom Choi , Su Yeol Lee
IPC分类号： H01L21/00
CPC分类号： H01L33/14 , H01L33/02 , H01L33/32
摘要： A vertical GaN-based LED and a method of manufacturing the same are provided. The vertical GaN-based LED can prevent the damage of an n-type GaN layer contacting an n-type electrode, thereby stably securing the contact resistance of the n-electrode. The vertical GaN-based LED includes: a support layer; a p-electrode formed on the support layer; a p-type GaN layer formed on the p-electrode; an active layer formed on the p-type GaN layer; an n-type GaN layer for an n-type electrode contact, formed on the active layer; an etch stop layer formed on the n-type GaN layer to expose a portion of the n-type GaN layer; and an n-electrode formed on the n-type GaN layer exposed by the etch stop layer.
摘要翻译：提供了一种垂直GaN基LED及其制造方法。垂直GaN基LED可以防止与n型电极接触的n型GaN层的损坏，从而稳定地确保n电极的接触电阻。垂直GaN基LED包括：支撑层; 形成在支撑层上的p电极; 形成在p电极上的p型GaN层; 形成在p型GaN层上的有源层; 在有源层上形成用于n型电极接触的n型GaN层; 形成在所述n型GaN层上以暴露所述n型GaN层的一部分的蚀刻停止层; 以及形成在由蚀刻停止层露出的n型GaN层上的n电极。

5. 发明授权

US07462876B2 Nitride semiconductor light emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US07462876B2
公开(公告)日：2008-12-09
申请号：US11584503
申请日：2006-10-23
申请人： Sang Heon Han , Bang Won Oh , Je Won Kim , Hyun Wook Shim , Joong Seo Kang , Dong Ju Lee
发明人： Sang Heon Han , Bang Won Oh , Je Won Kim , Hyun Wook Shim , Joong Seo Kang , Dong Ju Lee
IPC分类号： H01L33/00
CPC分类号： H01L33/04 , H01L33/32
摘要： Disclosed herein is a nitride semiconductor light emitting device, which is improved in luminance and reliability. The light emitting device, comprises an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer sequentially formed on a substrate, an n-side electrode formed on a portion of an upper surface of the n-type nitride semiconductor layer, and at least one intermediate layer formed between the substrate and the n-type nitride semiconductor layer. The intermediate layer has a multilayer structure of three or more layers having different band-gaps, and is positioned below the n-side electrode.
摘要翻译：本文公开了一种氮化物半导体发光器件，其亮度和可靠性得到改善。发光器件包括依次形成在衬底上的n型氮化物半导体层，有源层和p型氮化物半导体层，形成在n型氮化物的上表面的一部分上的n侧电极半导体层以及形成在基板和n型氮化物半导体层之间的至少一个中间层。中间层具有三层以上具有不同带隙的层的多层结构，位于n侧电极的下方。

6. 发明申请

US20070145406A1 Nitride semiconductor light emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US20070145406A1
公开(公告)日：2007-06-28
申请号：US11584503
申请日：2006-10-23
申请人： Sang Heon Han , Bang Won Oh , Je Won Kim , Hyun Wook Shim , Joong Seo Kang , Dong Ju Lee
发明人： Sang Heon Han , Bang Won Oh , Je Won Kim , Hyun Wook Shim , Joong Seo Kang , Dong Ju Lee
IPC分类号： H01L33/00
CPC分类号： H01L33/04 , H01L33/32
摘要： Disclosed herein is a nitride semiconductor light emitting device, which is improved in luminance and reliability. The light emitting device, comprises an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer sequentially formed on a substrate, an n-side electrode formed on a portion of an upper surface of the n-type nitride semiconductor layer, and at least one intermediate layer formed between the substrate and the n-type nitride semiconductor layer. The intermediate layer has a multilayer structure of three or more layers having different band-gaps, and is positioned below the n-side electrode.
摘要翻译：本文公开了一种氮化物半导体发光器件，其亮度和可靠性得到改善。发光器件包括依次形成在衬底上的n型氮化物半导体层，有源层和p型氮化物半导体层，形成在n型氮化物的上表面的一部分上的n侧电极半导体层以及形成在基板和n型氮化物半导体层之间的至少一个中间层。中间层具有三层以上具有不同带隙的层的多层结构，位于n侧电极的下方。

7. 发明授权

US07151045B2 Method for separating sapphire wafer into chips using dry-etching 有权
标题翻译：使用干蚀刻将蓝宝石晶片分离成芯片的方法
公开(公告)号：US07151045B2
公开(公告)日：2006-12-19
申请号：US10810634
申请日：2004-03-29
申请人： Ju Hyun Kim , Bang Won Oh
发明人： Ju Hyun Kim , Bang Won Oh
IPC分类号： H01L21/46 , H01L21/78 , H01L21/301
CPC分类号： B28D5/00 , H01L21/78 , H01L33/0095
摘要： A method for singulating a sapphire wafer, provided with semiconductor elements formed thereon, into unit chips includes (a) grinding a rear surface of the sapphire wafer so that the sapphire wafer has a designated thickness; (b) lapping the rear surface of the ground sapphire wafer so that the sapphire wafer has a designated thickness; (c) dry-etching the rear surface of the lapped sapphire wafer so that the sapphire wafer has a uniform thickness; and (d) scribing the rear surface of the dry-etched sapphire wafer.
摘要翻译：将形成有半导体元件的蓝宝石晶片分离成单元芯片的方法包括：（a）研磨蓝宝石晶片的后表面，使得蓝宝石晶片具有指定厚度; （b）研磨蓝宝石晶片的后表面，使得蓝宝石晶片具有指定的厚度; （c）对研磨的蓝宝石晶片的后表面进行干蚀刻，以使蓝宝石晶片具有均匀的厚度; 和（d）刻划干蚀刻蓝宝石晶片的后表面。

8. 发明授权

US07012284B2 Nitride semiconductor light emitting device and method of manufacturing the same 有权
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US07012284B2
公开(公告)日：2006-03-14
申请号：US10837780
申请日：2004-05-04
申请人： Seok Beom Choi , Bang Won Oh , Hee Seok Choi
发明人： Seok Beom Choi , Bang Won Oh , Hee Seok Choi
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/025
摘要： Disclosed herein is a nitride semiconductor light emitting device. The nitride semiconductor light emitting device comprises an n-type nitride semiconductor layer on a substrate, an active layer formed on the n-type nitride semiconductor layer so that a portion of the n-type nitride semiconductor layer is exposed, a p-type nitride semiconductor layer formed on the active layer, a high-concentration dopant area on the p-type nitride semiconductor layer, a counter doping area on the high-concentration dopant areas, an n-side electrode formed on an exposed portion of the n-type nitride semiconductor layer, and a p-side electrode formed on the counter doping area. A satisfactory ohmic contact for the p-side electrode is provided by an ion implantation process and heat treatment.
摘要翻译：这里公开了一种氮化物半导体发光器件。氮化物半导体发光器件包括在衬底上的n型氮化物半导体层，形成在n型氮化物半导体层上的有源层，以使n型氮化物半导体层的一部分露出，p型氮化物形成在有源层上的半导体层，p型氮化物半导体层上的高浓度掺杂剂区域，高浓度掺杂剂区域上的相对掺杂区域，形成在n型氮化物半导体层的暴露部分上的n侧电极氮化物半导体层和形成在反掺杂区域上的p侧电极。通过离子注入工艺和热处理提供了用于p侧电极的令人满意的欧姆接触。

9. 发明授权

US08405103B2 Photonic crystal light emitting device and manufacturing method of the same 有权
标题翻译：光子晶体发光器件及其制造方法相同
公开(公告)号：US08405103B2
公开(公告)日：2013-03-26
申请号：US12182383
申请日：2008-07-30
申请人： Dong Yul Lee , Seong Ju Park , Min Ki Kwon , Ja Yeon Kim , Yong Chun Kim , Bang Won Oh , Seok Min Hwang , Je Won Kim
发明人： Dong Yul Lee , Seong Ju Park , Min Ki Kwon , Ja Yeon Kim , Yong Chun Kim , Bang Won Oh , Seok Min Hwang , Je Won Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L2933/0083
摘要： There is provided a photonic crystal light emitting device including: a light emitting structure including first and second conductivity type semiconductor layers and an active layer interposed therebetween; a transparent electrode layer formed on the second conductivity type semiconductor layer, the transparent electrode layer having a plurality of holes arranged with a predetermined size and period so as to form a photonic band gap for light emitted from the active layer, whereby the transparent electrode layer includes a photonic crystal structure; and first and second electrode electrically connected to the first conductivity type semiconductor layer and the transparent electrode layer, respectively. The photonic crystal light emitting device has a transparent electrode layer formed of a photonic crystal structure defined by minute holes, thereby improved in light extraction efficiency.
摘要翻译：提供了一种光子晶体发光器件，包括：发光结构，包括第一和第二导电类型半导体层和插入其间的有源层; 形成在所述第二导电型半导体层上的透明电极层，所述透明电极层具有以预定尺寸和周期排列的多个孔，以形成从所述有源层发射的光的光子带隙，由此所述透明电极层包括光子晶体结构; 以及分别与第一导电类型半导体层和透明电极层电连接的第一和第二电极。光子晶体发光器件具有由微孔限定的光子晶体结构形成的透明电极层，从而提高光提取效率。

10. 发明授权

US07902544B2 Nitride semiconductor light emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US07902544B2
公开(公告)日：2011-03-08
申请号：US12787910
申请日：2010-05-26
申请人： Sun Woon Kim , Je Won Kim , Sang Won Kang , Keun Man Song , Bang Won Oh
发明人： Sun Woon Kim , Je Won Kim , Sang Won Kang , Keun Man Song , Bang Won Oh
IPC分类号： H01L33/00
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/32
摘要： The invention provides a highly reliable nitride semiconductor light emitting device improved in electrostatic discharge withstand voltage. In the light emitting device, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer are sequentially formed on a substrate. The active layer features a multiple quantum well structure including a plurality of multiple quantum barrier layers and quantum well layers. At least one of the quantum barrier layers has a band-gap modulated multilayer structure.
摘要翻译：本发明提供了一种改进了静电放电耐受电压的高度可靠的氮化物半导体发光器件。在发光器件中，在衬底上依次形成n型氮化物半导体层，有源层和p型氮化物半导体层。有源层具有包括多个多量子势垒层和量子阱层的多量子阱结构。至少一个量子势垒层具有带隙调制多层结构。

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