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1. 发明授权

US5444005A Method for manufacturing a capacitor of a semiconductor memory device 失效
标题翻译：半导体存储器件的电容器的制造方法
公开(公告)号：US5444005A
公开(公告)日：1995-08-22
申请号：US246277
申请日：1994-05-19
申请人： Yun-gi Kim , Fui-song Kim , Jin-seok Choi , Jong-ho Park
发明人： Yun-gi Kim , Fui-song Kim , Jin-seok Choi , Jong-ho Park
IPC分类号： H01L27/04 , H01L21/02 , H01L21/822 , H01L21/8242 , H01L27/10 , H01L27/108 , H01L21/70 , H01L27/00
CPC分类号： H01L27/10852 , H01L28/92 , Y10S438/947
摘要： A method for manufacturing a capacitor of a semiconductor memory device. A conductive layer is formed on the semiconductor substrate and a photoresist pattern is formed on the conductive layer. The conductive layer is etched, using the photoresist pattern as a mask to form a first step-portion in the conductive layer. A first spacer is formed on a sidewall of the photoresist pattern, which may be formed by flowing the photoresist pattern. The conductive layer is etched, using the first spacer as a mask, to form a second step-portion in the conductive layer. The photoresist pattern and the first spacer is removed. A first material layer is formed on the entire surface of the resultant structure and etched to form a second spacer on the sidewalls of the first and second step-portions. The conductive layer is etched, using the second spacer as a mask, to form a storage electrode of a capacitor. Cell capacitance may be increased by a simple process, and the heat cycle may be reduced.
摘要翻译：一种半导体存储器件的电容器的制造方法。在半导体衬底上形成导电层，并且在导电层上形成光刻胶图案。使用光致抗蚀剂图案作为掩模蚀刻导电层，以在导电层中形成第一台阶部分。在光致抗蚀剂图案的侧壁上形成第一间隔物，其可以通过使光致抗蚀剂图案流动而形成。使用第一间隔件作为掩模蚀刻导电层，以在导电层中形成第二台阶部分。去除光致抗蚀剂图案和第一间隔物。第一材料层形成在所得结构的整个表面上并被蚀刻以在第一和第二台阶部分的侧壁上形成第二间隔物。使用第二间隔物作为掩模蚀刻导电层，以形成电容器的存储电极。可以通过简单的工艺来增加电池电容，并且可以减少热循环。

2. 发明授权

US07018019B2 Ink-jet printhead and method for manufacturing the same 失效
标题翻译：喷墨打印头及其制造方法
公开(公告)号：US07018019B2
公开(公告)日：2006-03-28
申请号：US10690820
申请日：2003-10-23
申请人： Yun-gi Kim
发明人： Yun-gi Kim
IPC分类号： B41J2/05
CPC分类号： B41J2/1631 , B41J2/14129 , B41J2/1603 , B41J2/1628 , B41J2/1646
摘要： An ink-jet printhead, and a method for manufacturing the same. The printhead includes a substrate, a first insulating layer on the surface of the substrate, first and second conductors on the first insulating layer separated from each other, a heater including conductor connection layers for electrically connecting the first and second conductors to each other and between the first and second conductors. A second insulating layer is between the first and second conductors and between the conductor connection layers, and a barrier wall is provided on the substrate and defines an ink chamber filled with ink to be ejected. A nozzle plate is provided on the barrier wall, and forms upper walls of the ink chamber and in which nozzles, through which ink filled in the ink chamber is ejected, are formed.
摘要翻译：喷墨打印头及其制造方法。打印头包括基板，在基板的表面上的第一绝缘层，在第一绝缘层上彼此分离的第一和第二导体，包括用于将第一和第二导体彼此电连接的导体连接层的加热器，第一和第二导体。第二绝缘层位于第一和第二导体之间并且在导体连接层之间，并且阻挡壁设置在基板上并限定填充有要喷射的墨的墨室。在阻挡壁上设置喷嘴板，并形成墨水室的上壁，并且在其中喷射填充在墨水室中的墨水的喷嘴。

3. 发明授权

US06880916B2 Ink-jet printhead and method of manufacturing the same 失效
标题翻译：喷墨打印头及其制造方法
公开(公告)号：US06880916B2
公开(公告)日：2005-04-19
申请号：US10396409
申请日：2003-03-26
申请人： Yun-gi Kim
发明人： Yun-gi Kim
IPC分类号： B41J2/235 , B41J2/05 , B41J2/16 , B41J2/14
CPC分类号： B41J2/1628 , B41J2/1603 , B41J2/1629 , B41J2/1631 , B41J2/1639 , B41J2/1642
摘要： An ink-jet printhead and a method of manufacturing the ink-jet printhead include a substrate on which at least one heater and a passivation layer protecting the at least one heater are formed, a passage plate formed on the substrate to provide a chamber corresponding to the at least one heater, and a nozzle plate in which an orifice corresponding to the chamber is formed. The passage plate is formed of photoresist, and the nozzle plate is formed of a silicon-family material at a temperature limited by characteristics of the passage plate.
摘要翻译：一种喷墨打印头和一种制造喷墨打印头的方法包括：基板，其上形成有至少一个保护至少一个加热器的加热器和钝化层;基板上形成通道板，以提供对应于所述至少一个加热器和其中形成有对应于所述腔室的孔口的喷嘴板。通道板由光致抗蚀剂形成，并且喷嘴板在受限于通道板特性的温度下由硅族材料形成。

4. 发明授权

US5641705A Device isolation method of semiconductor device 失效
标题翻译：半导体器件的器件隔离方法
公开(公告)号：US5641705A
公开(公告)日：1997-06-24
申请号：US470914
申请日：1995-06-06
申请人： Dong-ho Ahn , Seong-joon Ahn , Yu-gyun Shin , Yun-gi Kim
发明人： Dong-ho Ahn , Seong-joon Ahn , Yu-gyun Shin , Yun-gi Kim
IPC分类号： H01L21/316 , H01L21/32 , H01L21/76 , H01L21/762
CPC分类号： H01L21/76205 , H01L21/32
摘要： In a device isolation method for a semiconductor device, after a pad oxide layer and a nitride layer are formed on a semiconductor substrate, the nitride layer located above the device isolation region is removed. An undercut is formed under the nitride by partially etching the pad oxide layer. After a first oxide layer is formed on the exposed substrate and a polysilicon spacer is formed on the sidewalls of the nitride layer, a void is formed in the oxide layer under the nitride layer which is formed on the active region by oxidizing the resultant structure in which the polysilicon spacer is formed at a temperature above 950.degree. C. Thus, good cell definition and stable device isolation can be realized, while solving the typical problem of conventional LOCOS methods by forming the void intentionally in the pad oxide layer thickened by bird's beak punch through.
摘要翻译：在半导体器件的器件隔离方法中，在衬底氧化物层和氮化物层形成在半导体衬底上之后，去除位于器件隔离区上方的氮化物层。通过部分蚀刻衬垫氧化物层，在氮化物之下形成底切。在暴露的基板上形成第一氧化物层并在氮化物层的侧壁上形成多晶硅间隔物之后，在形成于有源区上的氮化物层下面的氧化物层中形成空穴，其中多晶硅间隔物在高于950℃的温度下形成。因此，通过在通过鸟喙加厚的垫氧化物层中有意地形成空穴来解决常规LOCOS方法的典型问题，可以实现良好的电池定义和稳定的器件隔离穿透

5. 发明授权

US07675105B2 Non-volatile memory device for 2-bit operation and method of fabricating the same 失效
标题翻译：用于2位操作的非易失性存储器件及其制造方法
公开(公告)号：US07675105B2
公开(公告)日：2010-03-09
申请号：US11376518
申请日：2006-03-15
申请人： Byung-yong Choi , Dong-gun Park , Yun-gi Kim , Choong-ho Lee , Young-mi Lee , Hye-jin Cho
发明人： Byung-yong Choi , Dong-gun Park , Yun-gi Kim , Choong-ho Lee , Young-mi Lee , Hye-jin Cho
IPC分类号： H01L27/108 , H01L29/94
CPC分类号： H01L27/11568 , H01L21/28273 , H01L21/28282 , H01L27/0207 , H01L27/115 , H01L27/11519 , H01L27/11521 , H01L29/7887 , H01L29/7923
摘要： A non-volatile memory device for 2-bit operation and a method of fabricating the same are provided. The non-volatile memory device includes an active region and a gate extending in a word line direction on a semiconductor substrate, and crossing each other repeatedly; a charge storage layer disposed below the gate, and confined at a portion where the gate and the active region cross; a charge blocking layer formed on the charge storage layer; a tunnel dielectric layer formed below the charge storage layer; first and second source/drain regions formed in the active region exposed by the gate; and first and second bit lines crossing the word line direction. The active region may be formed in a first zigzag pattern and/or the gate may be formed in a second zigzag pattern in symmetry with the first zigzag pattern.
摘要翻译：提供了一种用于2位操作的非易失性存储器件及其制造方法。非易失性存储器件包括在半导体衬底上沿着字线方向延伸的有源区和栅极，并且重复地交叉; 电荷存储层，设置在所述栅极的下方，并限制在所述栅极和所述有源区域交叉的部分; 形成在电荷存储层上的电荷阻挡层; 形成在电荷存储层下面的隧道介电层; 在由栅极暴露的有源区中形成的第一和第二源/漏区; 以及与字线方向交叉的第一和第二位线。有源区可以形成为第一之字形图案和/或栅极可以以与第一曲折图案对称的第二曲折图案形成。

6. 发明授权

US5796134A Memory cells with a reduced area capacitor interconnect and methods of fabrication therefor 失效
标题翻译：具有减小面积电容器互连的存储单元及其制造方法
公开(公告)号：US5796134A
公开(公告)日：1998-08-18
申请号：US803285
申请日：1997-02-20
申请人： Yun-gi Kim
发明人： Yun-gi Kim
IPC分类号： H01L27/10 , H01L21/8242 , H01L21/8246 , H01L27/105 , H01L27/108 , H01L27/115 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113
CPC分类号： H01L27/11502 , H01L27/11507
摘要： A memory cell is formed including an insulation region on the substrate and a transistor including a gate on the substrate and a source/drain region in the substrate disposed between the gate and the insulation region. The cell also includes a capacitor including an electrode overlying the insulation region, the electrode having a lateral surface adjacent the source/drain region. A conductive interconnecting region is formed on the substrate and extends from the source/drain region to contact the lateral surface of the first electrode of the capacitor. The capacitor may include a first electrode on the insulation region, a dielectric region on the first electrode, and a second electrode on the dielectric region. The first electrode preferably is platinum and the dielectric region preferably is a ferroelectric material such as lead zirconate titanate (PZT) or Ba.sub.x Sr.sub.1-x TiO.sub.3 (BST). The first electrode preferably has a lateral surface, and the conductive interconnecting region extends to contact the lateral surface of the first electrode. The first electrode preferably has a top surface adjacent the lateral surface, and the cell preferably further comprises an insulation region on the top surface of the first electrode which laterally separates the dielectric region and the second electrode from the conductive interconnecting region.
摘要翻译：形成包括衬底上的绝缘区域和在衬底上包括栅极的晶体管和设置在栅极和绝缘区域之间的衬底中的源极/漏极区域的存储单元。电池还包括电容器，其包括覆盖绝缘区域的电极，电极具有邻近源/漏区的侧表面。导电互连区域形成在衬底上并且从源极/漏极区域延伸以接触电容器的第一电极的侧表面。电容器可以包括绝缘区域上的第一电极，第一电极上的电介质区域和电介质区域上的第二电极。第一电极优选为铂，并且电介质区域优选为铁电材料，例如锆钛酸铅（PZT）或BaxSr1-xTiO3（BST）。第一电极优选具有侧表面，并且导电互连区域延伸以接触第一电极的侧表面。第一电极优选地具有邻近侧表面的顶表面，并且电池优选地还包括在第一电极的顶表面上的横向分离电介质区域和第二电极与导电互连区域的绝缘区域。

7. 发明授权

US5677234A Methods of forming isolated semiconductor device active regions 失效
标题翻译：形成隔离半导体器件有源区的方法
公开(公告)号：US5677234A
公开(公告)日：1997-10-14
申请号：US665294
申请日：1996-06-18
申请人： Bon-young Koo , Byung-hong Chung , Hee-seok Kim , Yun-gi Kim
发明人： Bon-young Koo , Byung-hong Chung , Hee-seok Kim , Yun-gi Kim
IPC分类号： H01L21/316 , H01L21/32 , H01L21/76
CPC分类号： H01L21/32
摘要： Methods of forming semiconductor device active regions include the steps of forming a buffer layer containing a material susceptible to oxidation, such as polycrystalline or amorphous silicon, on a semiconductor substrate. To inhibit any native oxide film on the buffer layer from facilitating the formation of field oxide isolation regions having bird's beaks, the native oxide film is converted to a nitrogen containing film, such as silicon oxynitride, by nitrating the native oxide film. The silicon oxynitride film can be formed by exposing the oxide film to a nitrogen containing plasma, implanting nitrogen ions into the oxide film or annealing the oxide film in a nitrogen containing atmosphere, for example. During the nitrating step, chemically active oxygen in the native oxide film becomes bound to the nitrogen incorporated therein. A top oxidation resistant layer containing silicon nitride can then be formed on the nitrated surface of the buffer layer and used as an oxidation mask during a subsequent step of oxidizing the buffer layer to form field oxide isolation regions. By binding chemically active oxygen to nitrogen during the nitrating step, lateral oxidation under the top oxidation resistant layer is inhibited by limiting the lateral transport of chemically active oxygen. The masking properties of the top oxidation resistant layer can therefore be enhanced and utilized to form field oxide isolation regions having short or nonexistent bird beak's.
摘要翻译：形成半导体器件有源区的方法包括在半导体衬底上形成含有易于氧化的材料（例如多晶或非晶硅）的缓冲层的步骤。为了抑制缓冲层上的任何自然氧化膜促进形成具有鸟喙的场氧化物隔离区，通过硝化天然氧化物膜将天然氧化物膜转化成含氮膜如氮氧化硅。氧氮化硅膜可以通过将氧化物膜暴露于含氮等离子体，将氮离子注入到氧化膜中或者在含氮气氛中退火氧化膜来形成。在硝化步骤期间，天然氧化膜中的化学活性氧与结合在其中的氮结合。然后可以在缓冲层的硝化表面上形成含有氮化硅的顶部耐氧化层，并且在随后的氧化缓冲层的步骤中用作氧化掩模以形成场氧化物隔离区。通过在硝化步骤期间将化学活性氧与氮结合，通过限制化学活性氧的横向运输来抑制顶部抗氧化层下的侧向氧化。因此，顶部抗氧化层的掩蔽性能可以被增强并且用于形成具有短或不存在的鸟喙的场氧化物隔离区。

8. 发明授权

US5438013A Method of making a semiconductor memory device having a capacitor 失效
标题翻译：制造具有电容器的半导体存储器件的方法
公开(公告)号：US5438013A
公开(公告)日：1995-08-01
申请号：US112090
申请日：1993-08-26
申请人： Yun-gi Kim , Jeung-gil Lee
发明人： Yun-gi Kim , Jeung-gil Lee
IPC分类号： H01L27/04 , H01L21/02 , H01L21/822 , H01L21/8242 , H01L27/10 , H01L27/108
CPC分类号： H01L27/10852 , H01L27/10817 , H01L28/92
摘要： A capacitor of a semiconductor memory device having a greater cell capacitance than a double-cylindrical capacitor and an improved method for manufacturing the same are disclosed. A first conductive layer is formed on a semiconductor substrate and then first and second material layers are formed on the first conductive layer. The first material and second material layers are patterned to form a composite pattern comprised of a precursory first material pattern and a second material pattern. The precursory first material pattern is anisotropically etched to form a first material pattern smaller than the second material pattern. Here, an undercut portion under the second material pattern is created. Then, the first conductive layer is anisotropically and partially etched to form a first conductive layer pattern having a groove defining a protruding stepped portion into an individual cell unit. After forming a first spacer on the sidewall of the first material pattern and a second spacer on the sidewall of the groove, the first conductive layer pattern is anisotropically etched to thereby form a double-cylindrical electrode. A double-cylindrical storage electrode can be simply manufactured so that the cell capacitance of a semiconductor memory device can be reliably enlarged.
摘要翻译：公开了具有比双圆柱形电容器更大的单元电容的半导体存储器件的电容器及其制造方法。在半导体衬底上形成第一导电层，然后在第一导电层上形成第一和第二材料层。将第一材料层和第二材料层图案化以形成由前体第一材料图案和第二材料图案组成的复合图案。前体第一材料图案被各向异性地蚀刻以形成小于第二材料图案的第一材料图案。这里，产生第二材料图案下的底切部分。然后，第一导电层被各向异性地部分地蚀刻以形成具有限定突出阶梯部分的槽的第一导电层图案到单个单元单元中。在第一材料图案的侧壁上形成第一间隔物和在凹槽的侧壁上的第二间隔物之后，第一导电层图案被各向异性蚀刻从而形成双圆柱形电极。可以简单地制造双圆柱形存储电极，使得可以可靠地扩大半导体存储器件的单元电容。

9. 发明授权

US07481942B2 Monolithic ink-jet printhead and method of manufacturing the same 失效
标题翻译：单片喷墨打印头及其制造方法
公开(公告)号：US07481942B2
公开(公告)日：2009-01-27
申请号：US10422824
申请日：2003-04-25
申请人： Jae-sik Min , Byung-ha Park , Myung-jong Kwon , Young-shik Park , Yun-gi Kim
发明人： Jae-sik Min , Byung-ha Park , Myung-jong Kwon , Young-shik Park , Yun-gi Kim
IPC分类号： B41J2/135
CPC分类号： B41J2/1639 , B41J2/1603 , B41J2/1628 , B41J2/1631
摘要： An ink-jet printhead and a method of manufacturing the same include a substrate on which a heater and a passivation layer protecting the heater are formed, a passage plate on which an ink chamber corresponding to the heater and an ink passage connected to the ink chamber are formed, and a nozzle plate in which an orifice corresponding to the ink chamber is formed. An exposure stop layer (ESL) that blocks passage of a photosensitive energy is formed inside the nozzle plate, and the nozzle plate and the passage plate are bonded with each other by the exposure stop layer (ESL).
摘要翻译：喷墨打印头及其制造方法包括其上形成有保护加热器的加热器和钝化层的基板，与该加热器对应的墨水室的通道板和与墨水室连接的墨水通道形成有与油墨室对应的喷嘴的喷嘴板。在喷嘴板的内部形成阻挡感光能通过的曝光停止层（ESL），喷嘴板和通道板通过曝光停止层（ESL）相互粘接。

10. 发明申请

US20080073320A1 Bubble-ink jet print head and fabrication method thereof 审中-公开
标题翻译：泡沫喷墨打印头及其制造方法
公开(公告)号：US20080073320A1
公开(公告)日：2008-03-27
申请号：US11984811
申请日：2007-11-21
申请人： Yun-gi Kim , Yong-shik Park , Sung-joon Park
发明人： Yun-gi Kim , Yong-shik Park , Sung-joon Park
IPC分类号： G11B5/127
CPC分类号： B41J2/14129 , B41J2/1404 , B41J2/1603 , B41J2/1628 , B41J2/1629 , B41J2/1631 , B41J2/1632 , B41J2/1642 , B41J2/1646
摘要： A bubble-ink jet print head includes: a substrate having ink chambers to store ink and resistance heat emitting bodies to heat ink disposed thereover; and an ink supply passage which penetrates the substrate and which is connected with the ink chambers. The ink supply passage includes: a first trench formed at a first surface of the substrate in a first pattern having a separating distance from at least one of inlets of the ink chambers and connecting portions between the adjacent ink chambers, the first surface of the substrate having the ink chambers disposed thereover, and a second trench formed at a second surface of the substrate in a second pattern, having one of an area equal to and an area smaller than that of the first trench in the range of the first pattern of the first trench, and in communication with the first trench.
摘要翻译：气泡喷墨打印头包括：具有存储墨的墨室和用于加热设置在其上的墨的电阻发热体的基板; 以及穿过基板并与墨水室连接的供墨通道。供墨通道包括：第一沟槽，以第一图案形成在基板的第一表面处，该第一图案具有与墨室的入口和相邻墨室之间的连接部分中的至少一个的分隔距离，基板的第一表面具有设置在其上的墨水室和形成在第二图案的基板的第二表面处的第二沟槽，其具有与第一图案的第一图案的范围内的第一沟槽的面积等于或小于第一沟槽的面积的面积第一沟槽，并与第一沟槽沟通。

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