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1. 发明授权

US08146236B1 Method for providing a perpendicular magnetic recording (PMR) transducer 有权
标题翻译：提供垂直磁记录（PMR）传感器的方法
公开(公告)号：US08146236B1
公开(公告)日：2012-04-03
申请号：US12057692
申请日：2008-03-28
申请人： Guanghong Luo , Liubo Hong , Honglin Zhu , Yun-Fei Li , Yingjian Chen
发明人： Guanghong Luo , Liubo Hong , Honglin Zhu , Yun-Fei Li , Yingjian Chen
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/3116 , G11B5/1278 , G11B5/3163 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A method and system for providing a perpendicular magnetic recording (PMR) transducer from pole layer(s) are disclosed. First and second planarization stop layers are provided on the pole layer(s). A mask is provided on the second planarization stop layer. A first portion of the mask resides on a portion of the pole layer(s) used to form the PMR pole. The PMR pole is defined after the mask is provided. An intermediate layer surrounding at least the PMR pole is provided. A first planarization is performed on at least the intermediate layer. A portion of the second planarization stop layer is removed during the first planarization. A remaining portion of the second planarization stop layer is removed. A second planarization is performed. A portion of the first planarization stop layer remains after the second planarization. A write gap and shield are provided on the PMR pole and write gap, respectively.
摘要翻译：公开了一种用于从极层提供垂直磁记录（PMR）换能器的方法和系统。第一和第二平坦化停止层设置在极层上。在第二平坦化停止层上设置掩模。掩模的第一部分位于用于形成PMR极的极层的一部分上。在提供面罩之后定义PMR极。提供至少围绕PMR极的中间层。至少在中间层上执行第一平面化。在第一平坦化期间，去除第二平坦化停止层的一部分。去除第二平坦化停止层的剩余部分。执行第二平面化。在第二平面化之后，第一平坦化停止层的一部分保留。分别在PMR极和写间隙上提供写间隙和屏蔽。

2. 发明授权

US08320077B1 Method and system for providing a high moment film 有权
标题翻译：提供高力矩胶片的方法和系统
公开(公告)号：US08320077B1
公开(公告)日：2012-11-27
申请号：US12334753
申请日：2008-12-15
申请人： Yunjun Tang , Yun-Fei Li , Yingjian Chen
发明人： Yunjun Tang , Yun-Fei Li , Yingjian Chen
IPC分类号： G11B5/127 , G11B5/147 , G11B5/31
CPC分类号： G11B5/147 , G11B5/1278 , G11B5/3113 , G11B5/3116 , G11B5/3146
摘要： A method and system for providing a high moment film are disclosed. The high moment film might be used in structures, such as a pole, of a magnetic transducer. The method and system includes providing a plurality of high moment layers and at least one soft magnetic layer interleaved with and ferromagnetically coupled with the plurality of high moment layers. Each of the plurality of high moment layers has a magnetic moment of greater than 2.4 Tesla. The at least one soft magnetic layer has a hard axis coercivity of not more than twenty Oersted. The high moment film has a total thickness of at least one thousand Angstroms.
摘要翻译：公开了一种用于提供高力矩薄膜的方法和系统。高力矩胶片可用于磁性传感器的结构，如磁极。该方法和系统包括提供多个高力矩层和至少一个与多个高力矩层交织并且与磁化耦合的软磁层。多个高力矩层中的每一个具有大于2.4特斯拉的磁矩。所述至少一个软磁性层具有不超过二十奥斯特的硬轴矫顽力。高力矩薄膜的总厚度至少为一千埃。

3. 发明授权

US08231796B1 Method and system for providing a magnetic recording transducer having side shields 有权
标题翻译：用于提供具有侧屏蔽的磁记录换能器的方法和系统
公开(公告)号：US08231796B1
公开(公告)日：2012-07-31
申请号：US12331238
申请日：2008-12-09
申请人： Yun-Fei Li , Yingjian Chen
发明人： Yun-Fei Li , Yingjian Chen
IPC分类号： B44C1/22
CPC分类号： G11B5/3163 , G11B5/3116 , G11B5/315
摘要： A method and system provide a magnetic transducer that includes an underlayer and a nonmagnetic layer on the underlayer. The method and system include providing a trench in the nonmagnetic layer. The trench has a plurality of sides. The method and system also include providing a separation layer in the trench. A portion of the separation layer resides on the sides of the trench. The method and system include providing the main pole. At least part of the main pole resides in the trench on the portion of the separation layer and has a plurality of pole sides. The method and system further include removing at least a portion of the second nonmagnetic layer, thereby exposing the portion of the separation layer. The method and system also include providing a side shield. The separation layer magnetically separates the pole sides from the side shield.
摘要翻译：一种方法和系统提供一种在底层上包括底层和非磁性层的磁换能器。该方法和系统包括在非磁性层中提供沟槽。沟槽具有多个侧面。该方法和系统还包括在沟槽中提供分离层。分离层的一部分位于沟槽的侧面。该方法和系统包括提供主极。主极的至少一部分位于分离层部分上的沟槽中，并且具有多个极侧。所述方法和系统还包括去除第二非磁性层的至少一部分，从而暴露分离层的部分。该方法和系统还包括提供侧护罩。分离层将极侧与侧护罩磁性地分离。

4. 发明授权

US07819979B1 Method and system for cleaning magnetic artifacts using a carbonyl reactive ion etch 有权
标题翻译：使用羰基反应离子蚀刻清洁磁伪影的方法和系统
公开(公告)号：US07819979B1
公开(公告)日：2010-10-26
申请号：US11046972
申请日：2005-01-31
申请人： Benjamin Chen , Yun-Fei Li , Hugh C. Hiner , Wei Zhang , Yingjian Chen
发明人： Benjamin Chen , Yun-Fei Li , Hugh C. Hiner , Wei Zhang , Yingjian Chen
IPC分类号： B08B7/00 , B08B7/04
CPC分类号： G01R33/098 , B82Y25/00 , B82Y40/00 , G11B5/84 , G11C11/161 , H01F10/3254 , H01F10/3268 , H01F41/308 , H01F41/32
摘要： A method and system for providing a magnetic structure that includes at least one magnetic material is disclosed. The method and system include defining the magnetic structure. The magnetic structure also includes a top layer that is insensitive to an istroropic carbonyl reactive ion etch. The defining of the magnetic structure results in at least one artifact. The method and system further includes cleaning the at least one artifact using at least one isotropic carbonyl reactive ion etch.
摘要翻译：公开了一种用于提供包括至少一种磁性材料的磁性结构的方法和系统。该方法和系统包括限定磁结构。磁性结构还包括对异构羰基反应离子蚀刻不敏感的顶层。磁结构的定义导致至少一个假象。所述方法和系统还包括使用至少一种各向同性的羰基反应离子蚀刻来清洁所述至少一个假象。

5. 发明授权

US08797680B1 Perpendicular magnetic recording head having reduced shield notching 有权
标题翻译：垂直磁记录头具有减少的屏蔽开槽
公开(公告)号：US08797680B1
公开(公告)日：2014-08-05
申请号：US13417930
申请日：2012-03-12
申请人： Guanghong Luo , Liubo Hong , Honglin Zhu , Yun-Fei Li , Yingjian Chen
发明人： Guanghong Luo , Liubo Hong , Honglin Zhu , Yun-Fei Li , Yingjian Chen
IPC分类号： G11B5/127
CPC分类号： G11B5/3116 , G11B5/1278 , G11B5/3163 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A perpendicular magnetic recording (PMR) transducer is provided. The PRM transducer includes a PMR pole having a top, a bottom, and at least one sidewall, the bottom having a bottom width, the top having a top width bigger than the bottom width. The PRM transducer further includes an intermediate layer adjacent to the at least one sidewall, a write gap on the PMR pole, the write gap including a first layer on the PMR pole, the first layer including a planarization stop layer, and a shield on the write gap.
摘要翻译：提供垂直磁记录（PMR）传感器。 PRM传感器包括具有顶部，底部和至少一个侧壁的PMR极，底部具有底部宽度，顶部具有大于底部宽度的顶部宽度。 PRM换能器还包括与至少一个侧壁相邻的中间层，PMR极上的写入间隙，写入间隙包括PMR极上的第一层，第一层包括平坦化停止层，以及屏蔽写差距。

6. 发明授权

US07688555B2 Hard bias design for extra high density recording 有权
标题翻译：用于超高密度记录的硬偏置设计
公开(公告)号：US07688555B2
公开(公告)日：2010-03-30
申请号：US10868716
申请日：2004-06-15
申请人： Kunliang Zhang , Yun-Fei Li , Chyu-Jiuh Torng , Chen-Jung Chien
发明人： Kunliang Zhang , Yun-Fei Li , Chyu-Jiuh Torng , Chen-Jung Chien
IPC分类号： G11B5/39 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3912 , G11B5/3932 , G11B2005/3996
摘要： A hard bias structure for biasing a free layer in a MR element within a read head is comprised of a composite hard bias layer having a Co78.6Cr5.2Pt16.2/Co65Cr15Pt20 configuration. The upper Co65Cr15Pt20 layer has a larger Hc value and a thickness about 2 to 10 times greater than that of the Co78.6Cr5.2Pt16.2 layer. The hard bias structure may also include a BCC underlayer such as FeCoMo which enhances the magnetic moment of the hard bias structure. Optionally, the thickness of the Co78.6Cr5.2Pt16.2 layer is zero and the Co65Cr15Pt20 layer is formed on the BCC underlayer. The present invention also encompasses a laminated hard bias structure. The Mrt value for the hard bias structure may be optimized by adjusting the thicknesses of the BCC underlayer and CoCrPt layers. As a result, a larger process window is realized and lower asymmetry output during a read operation is achieved.
摘要翻译：用于偏置读取头内的MR元件中的自由层的硬偏置结构由具有Co78.6Cr5.2Pt16.2 / Co65Cr15Pt20配置的复合硬偏置层组成。 Co65Cr15Pt20上层具有较大的Hc值，厚度约为Co78.6Cr5.2Pt16.2层的2〜10倍。硬偏压结构还可以包括诸如FeCoMo的BCC底层，其增强了硬偏压结构的磁矩。可选地，Co78.6Cr5.2Pt16.2层的厚度为零，Co65Cr15Pt20层形成在BCC底层上。本发明还包括层压硬偏置结构。可以通过调整BCC底层和CoCrPt层的厚度来优化硬偏置结构的Mrt值。结果，实现了更大的处理窗口，并且在读取操作期间实现了较低的不对称输出。

7. 发明授权

US07336452B2 Patterned exchange bias GMR using metallic buffer layer 失效
标题翻译：图案交换偏置GMR使用金属缓冲层
公开(公告)号：US07336452B2
公开(公告)日：2008-02-26
申请号：US11036957
申请日：2005-01-14
申请人： Moris Dovek , Po-Kang Wang , Chen-Jung Chien , Chyu-Jiuh Torng , Yun-Fei Li
发明人： Moris Dovek , Po-Kang Wang , Chen-Jung Chien , Chyu-Jiuh Torng , Yun-Fei Li
IPC分类号： G11B5/33
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B2005/3996 , Y10T29/49032 , Y10T29/49036 , Y10T29/49044 , Y10T29/49046
摘要： In magnetic read heads based on bottom spin valves the preferred structure is for the longitudinal bias layer to be in direct contact with the free layer. Such a structure is very difficult to manufacture. The present invention overcomes this problem by introducing an extra layer between the bias electrodes and the free layer. This layer protects the free layer during processing but is thin enough to not interrupt exchange between the bias electrodes and the free layer. In one embodiment this is a layer of copper about 5 Å thick and parallel exchange is operative. In other embodiments ruthenium is used to provide antiparallel exchange between the bias electrode and the free layer. A process for manufacturing the structure is also described.
摘要翻译：在基于底部自旋阀的磁性读取头中，优选的结构是使纵向偏置层与自由层直接接触。这样的结构很难制造。本发明通过在偏置电极和自由层之间引入额外的层来克服这个问题。该层在处理过程中保护自由层，但足够薄到不会中断偏置电极和自由层之间的交换。在一个实施例中，这是一层厚约5埃的铜层并且平行的交换是可操作的。在其他实施方案中，钌用于在偏置电极和自由层之间提供反向平行交换。还描述了用于制造该结构的方法。

8. 发明授权

US07327540B2 Hard biased materials for recording head applications 失效
标题翻译：用于记录头应用的硬偏置材料
公开(公告)号：US07327540B2
公开(公告)日：2008-02-05
申请号：US10858029
申请日：2004-06-01
申请人： Yun-Fei Li , Kunliang Zhang , Chyu-Jiuh Torng
发明人： Yun-Fei Li , Kunliang Zhang , Chyu-Jiuh Torng
IPC分类号： G11B5/33 , G11B5/127 , G11B5/39
CPC分类号： G11B5/39 , Y10T428/11 , Y10T428/115
摘要： A hard bias layer that forms an abutting junction with a free layer in a GMR element and is comprised of FePtCu or FePtCuX where X is B, C, O, Si, or N is disclosed. The FePtCu layer has a composition of about 45 atomic % Fe, 45 atomic % Pt, and 10 atomic % Cu and does not require a seed layer to achieve an ordered structure. The FePtCu layer is annealed at a temperature of about 280° C. and has an Hc value more than double that of a conventional CoCrPt hard bias layer with a similar thickness. Since the FePtCu hard bias layer adjoins a free layer, it has a higher sensor edge pinning efficiency than a configuration with a CoCrPt layer on a seed layer. The novel hard bias layer is compatible with either a top or bottom spin valve structure in a GMR sensor.
摘要翻译：公开了与GMR元件中的自由层形成邻接连接并由FePtCu或FePtCuX组成的硬偏置层，其中X是B，C，O，Si或N。 FePtCu层具有约45原子％Fe，45原子％Pt和10原子％Cu的组成，并且不需要种子层来实现有序结构。 FePtCu层在约280℃的温度下进行退火，并且其Hc值大于具有相似厚度的常规CoCrPt硬偏压层的Hc值的两倍以上。由于FePtCu硬偏置层与自由层相邻，因此与种子层上的CoCrPt层的配置相比，传感器边缘钉扎效率更高。新颖的硬偏置层与GMR传感器中的顶部或底部自旋阀结构兼容。

9. 发明申请

US20060126231A1 Composite free layer for CIP GMR device 失效
标题翻译： CIP GMR器件的复合自由层
公开(公告)号：US20060126231A1
公开(公告)日：2006-06-15
申请号：US11010105
申请日：2004-12-10
申请人： Tong Zhao , Hui-Chuan Wang , Yun-Fei Li , Chyu-Jiuh Torng
发明人： Tong Zhao , Hui-Chuan Wang , Yun-Fei Li , Chyu-Jiuh Torng
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/3903 , H01L43/10
摘要： In this invention, we replace low resistivity NiFe with high-resistivity FeNi for the FL2 portion of a composite free layer in a CIP GMR sensor in order to minimize current shunting effects while still retaining both magnetic softness and low magnetostriction. A process for manufacturing the device is also described.
摘要翻译：在本发明中，为了最小化电流分流效应同时保持磁性柔软性和低磁致伸缩性，我们用CIP GMR传感器中的复合自由层的FL2部分代替具有高电阻率FeNi的低电阻率NiFe。还描述了用于制造该装置的方法。

10. 发明申请

US20060061916A1 Easily manufactured exchange bias stabilization scheme 失效
公开(公告)号：US20060061916A1
公开(公告)日：2006-03-23
申请号：US11268074
申请日：2005-11-07
申请人： Yun-Fei Li , Hui-Chuan Wang , Chyu-Jiuh Torng , C. C. Han
发明人： Yun-Fei Li , Hui-Chuan Wang , Chyu-Jiuh Torng , C. C. Han
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3116 , G11B5/3143 , G11B5/3163 , G11B5/3903 , G11B2005/3996 , Y10T29/49032 , Y10T29/49044 , Y10T29/49046
摘要： A problem associated with current bottom spin valve designs is that it is difficult to avoid magnetic charge accumulation at the edge of the sensor area, making a coherent spin rotation during sensing difficult to achieve. This problem has been eliminated by introducing an exchange coupling layer between the free layer and the ferromagnetic layer that is used to achieve longitudinal bias for stabilization and by extending the free layer well beyond the sensor area. After all layers have been deposited, the read gap is formed by etching down as far as this layer. Since it is not critical exactly how much of the biasing layers (antiferromagnetic as well as ferromagnetic) are removed, the etching requirements are greatly relaxed. Whatever material remains in the gap is then oxidized thereby providing a capping layer as well as a good interface for specular reflection in the sensor region.

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