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1. 发明申请

US20100172053A1 Novel hard bias design for extra high density recording 有权
标题翻译：用于超高密度记录的新型硬偏置设计
公开(公告)号：US20100172053A1
公开(公告)日：2010-07-08
申请号：US12660908
申请日：2010-03-05
申请人： Kunliang Zhang , Yun-Fei Li , Chyu-Jiuh Torng , Chen-Jung Chien
发明人： Kunliang Zhang , Yun-Fei Li , Chyu-Jiuh Torng , Chen-Jung Chien
IPC分类号： G11B5/187 , B05D1/36
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3912 , G11B5/3932 , G11B2005/3996
摘要： A hard bias structure for biasing a free layer in a MR element within a read head is comprised of a composite hard bias layer having a Co78.6Cr5.2Pt16.2/Co65Cr15Pt20 configuration. The upper Co65Cr15Pt20 layer has a larger Hc value and a thickness about 2 to 10 times greater than that of the Co78.6Cr5.2Pt16.2 layer. The hard bias structure may also include a BCC underlayer such as FeCoMo which enhances the magnetic moment of the hard bias structure. Optionally, the thickness of the Co78.6Cr5.2Pt16.2 layer is zero and the Co65Cr15Pt20 layer is formed on the BCC underlayer. The present invention also encompasses a laminated hard bias structure. The Mrt value for the hard bias structure may be optimized by adjusting the thicknesses of the BCC underlayer and CoCrPt layers. As a result, a larger process window is realized and lower asymmetry output during a read operation is achieved.
摘要翻译：用于偏置读取头内的MR元件中的自由层的硬偏置结构由具有Co78.6Cr5.2Pt16.2 / Co65Cr15Pt20配置的复合硬偏置层组成。 Co65Cr15Pt20上层具有较大的Hc值，厚度约为Co78.6Cr5.2Pt16.2层的2〜10倍。硬偏压结构还可以包括诸如FeCoMo的BCC底层，其增强了硬偏压结构的磁矩。可选地，Co78.6Cr5.2Pt16.2层的厚度为零，Co65Cr15Pt20层形成在BCC底层上。本发明还包括层压硬偏置结构。可以通过调整BCC底层和CoCrPt层的厚度来优化硬偏置结构的Mrt值。结果，实现了更大的处理窗口，并且在读取操作期间实现了较低的不对称输出。

2. 发明授权

US07688555B2 Hard bias design for extra high density recording 有权
标题翻译：用于超高密度记录的硬偏置设计
公开(公告)号：US07688555B2
公开(公告)日：2010-03-30
申请号：US10868716
申请日：2004-06-15
申请人： Kunliang Zhang , Yun-Fei Li , Chyu-Jiuh Torng , Chen-Jung Chien
发明人： Kunliang Zhang , Yun-Fei Li , Chyu-Jiuh Torng , Chen-Jung Chien
IPC分类号： G11B5/39 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3912 , G11B5/3932 , G11B2005/3996
摘要： A hard bias structure for biasing a free layer in a MR element within a read head is comprised of a composite hard bias layer having a Co78.6Cr5.2Pt16.2/Co65Cr15Pt20 configuration. The upper Co65Cr15Pt20 layer has a larger Hc value and a thickness about 2 to 10 times greater than that of the Co78.6Cr5.2Pt16.2 layer. The hard bias structure may also include a BCC underlayer such as FeCoMo which enhances the magnetic moment of the hard bias structure. Optionally, the thickness of the Co78.6Cr5.2Pt16.2 layer is zero and the Co65Cr15Pt20 layer is formed on the BCC underlayer. The present invention also encompasses a laminated hard bias structure. The Mrt value for the hard bias structure may be optimized by adjusting the thicknesses of the BCC underlayer and CoCrPt layers. As a result, a larger process window is realized and lower asymmetry output during a read operation is achieved.
摘要翻译：用于偏置读取头内的MR元件中的自由层的硬偏置结构由具有Co78.6Cr5.2Pt16.2 / Co65Cr15Pt20配置的复合硬偏置层组成。 Co65Cr15Pt20上层具有较大的Hc值，厚度约为Co78.6Cr5.2Pt16.2层的2〜10倍。硬偏压结构还可以包括诸如FeCoMo的BCC底层，其增强了硬偏压结构的磁矩。可选地，Co78.6Cr5.2Pt16.2层的厚度为零，Co65Cr15Pt20层形成在BCC底层上。本发明还包括层压硬偏置结构。可以通过调整BCC底层和CoCrPt层的厚度来优化硬偏置结构的Mrt值。结果，实现了更大的处理窗口，并且在读取操作期间实现了较低的不对称输出。

3. 发明授权

US07327540B2 Hard biased materials for recording head applications 失效
标题翻译：用于记录头应用的硬偏置材料
公开(公告)号：US07327540B2
公开(公告)日：2008-02-05
申请号：US10858029
申请日：2004-06-01
申请人： Yun-Fei Li , Kunliang Zhang , Chyu-Jiuh Torng
发明人： Yun-Fei Li , Kunliang Zhang , Chyu-Jiuh Torng
IPC分类号： G11B5/33 , G11B5/127 , G11B5/39
CPC分类号： G11B5/39 , Y10T428/11 , Y10T428/115
摘要： A hard bias layer that forms an abutting junction with a free layer in a GMR element and is comprised of FePtCu or FePtCuX where X is B, C, O, Si, or N is disclosed. The FePtCu layer has a composition of about 45 atomic % Fe, 45 atomic % Pt, and 10 atomic % Cu and does not require a seed layer to achieve an ordered structure. The FePtCu layer is annealed at a temperature of about 280° C. and has an Hc value more than double that of a conventional CoCrPt hard bias layer with a similar thickness. Since the FePtCu hard bias layer adjoins a free layer, it has a higher sensor edge pinning efficiency than a configuration with a CoCrPt layer on a seed layer. The novel hard bias layer is compatible with either a top or bottom spin valve structure in a GMR sensor.
摘要翻译：公开了与GMR元件中的自由层形成邻接连接并由FePtCu或FePtCuX组成的硬偏置层，其中X是B，C，O，Si或N。 FePtCu层具有约45原子％Fe，45原子％Pt和10原子％Cu的组成，并且不需要种子层来实现有序结构。 FePtCu层在约280℃的温度下进行退火，并且其Hc值大于具有相似厚度的常规CoCrPt硬偏压层的Hc值的两倍以上。由于FePtCu硬偏置层与自由层相邻，因此与种子层上的CoCrPt层的配置相比，传感器边缘钉扎效率更高。新颖的硬偏置层与GMR传感器中的顶部或底部自旋阀结构兼容。

4. 发明申请

US20050275975A1 Novel hard bias design for extra high density recording 有权
标题翻译：用于超高密度记录的新型硬偏置设计
公开(公告)号：US20050275975A1
公开(公告)日：2005-12-15
申请号：US10868716
申请日：2004-06-15
申请人： Kunliang Zhang , Yun-Fei Li , Chyu-Jiuh Torng , Chen-Jung Chien
发明人： Kunliang Zhang , Yun-Fei Li , Chyu-Jiuh Torng , Chen-Jung Chien
IPC分类号： G11B5/127 , G11B5/33 , G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3912 , G11B5/3932 , G11B2005/3996
摘要： A hard bias structure for biasing a free layer in a MR element within a read head is comprised of a composite hard bias layer having a Co78.6Cr5.2Pt16.2/Co65Cr15Pt20 configuration. The upper Co65Cr15Pt20 layer has a larger Hc value and a thickness about 2 to 10 times greater than that of the Co78.6Cr5.2Pt16.2 layer. The hard bias structure may also include a BCC underlayer such as FeCoMo which enhances the magnetic moment of the hard bias structure. Optionally, the thickness of the Co78.6Cr5.2Pt16.2 layer is zero and the Co65Cr15Pt20 layer is formed on the BCC underlayer. The present invention also encompasses a laminated hard bias structure. The Mrt value for the hard bias structure may be optimized by adjusting the thicknesses of the BCC underlayer and CoCrPt layers. As a result, a larger process window is realized and lower asymmetry output during a read operation is achieved.
摘要翻译：用于偏置读取头内的MR元件中的自由层的硬偏置结构包括具有Co ++ 78.6Cr 5.2 Pt 16.2的复合硬偏置层另一方面，本发明的另一个目的是提供一种用于制造高分子材料的方法。上部Co 65 N 15 15 Pt 20 O层具有较大的Hc值，并且厚度比Co < 丙烯酸甲酯，丙烯酸甲酯，丙烯酸丁酯，丙烯酸乙酯硬偏压结构还可以包括诸如FeCoMo的BCC底层，其增强了硬偏压结构的磁矩。任选地，Co ++ C 26.6 Cr 2 Pt 16.2层的厚度为零，并且Co 65 在BCC底层上形成> 15 20 层。本发明还包括层压硬偏置结构。可以通过调整BCC底层和CoCrPt层的厚度来优化硬偏置结构的Mrt值。结果，实现了更大的处理窗口，并且在读取操作期间实现了较低的不对称输出。

5. 发明授权

US08107201B2 Hard bias design for extra high density recording 有权
标题翻译：用于超高密度记录的硬偏置设计
公开(公告)号：US08107201B2
公开(公告)日：2012-01-31
申请号：US12660908
申请日：2010-03-05
申请人： Kunliang Zhang , Yun-Fei Li , Chyu-Jiuh Torng , Chen-Jung Chien
发明人： Kunliang Zhang , Yun-Fei Li , Chyu-Jiuh Torng , Chen-Jung Chien
IPC分类号： G11B5/39 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3912 , G11B5/3932 , G11B2005/3996
摘要： A hard bias structure for biasing a free layer in a MR element within a read head is comprised of a composite hard bias layer having a Co78.6Cr5.2Pt16.2/Co65Cr15Pt20 configuration. The upper Co65Cr15Pt20 layer has a larger Hc value and a thickness about 2 to 10 times greater than that of the Co78.6Cr5.2Pt16.2 layer. The hard bias structure may also include a BCC underlayer such as FeCoMo which enhances the magnetic moment of the hard bias structure. Optionally, the thickness of the Co78.6Cr5.2Pt16.2 layer is zero and the Co65Cr15Pt20 layer is formed on the BCC underlayer. The present invention also encompasses a laminated hard bias structure. The Mrt value for the hard bias structure may be optimized by adjusting the thicknesses of the BCC underlayer and CoCrPt layers. As a result, a larger process window is realized and lower asymmetry output during a read operation is achieved.
摘要翻译：用于偏置读取头内的MR元件中的自由层的硬偏置结构由具有Co78.6Cr5.2Pt16.2 / Co65Cr15Pt20配置的复合硬偏置层组成。 Co65Cr15Pt20上层具有较大的Hc值，厚度约为Co78.6Cr5.2Pt16.2层的2〜10倍。硬偏压结构还可以包括诸如FeCoMo的BCC底层，其增强了硬偏压结构的磁矩。可选地，Co78.6Cr5.2Pt16.2层的厚度为零，Co65Cr15Pt20层形成在BCC底层上。本发明还包括层压硬偏置结构。可以通过调整BCC底层和CoCrPt层的厚度来优化硬偏置结构的Mrt值。结果，实现了更大的处理窗口，并且在读取操作期间实现了较低的不对称输出。

6. 发明申请

US20050264957A1 Hard biased materials for recording head applications 失效
标题翻译：用于记录头应用的硬偏置材料
公开(公告)号：US20050264957A1
公开(公告)日：2005-12-01
申请号：US10858029
申请日：2004-06-01
申请人： Yun-Fei Li , Kunliang Zhang , Chyu-Jiuh Torng
发明人： Yun-Fei Li , Kunliang Zhang , Chyu-Jiuh Torng
IPC分类号： G11B5/127 , G11B5/33 , G11B5/39
CPC分类号： G11B5/39 , Y10T428/11 , Y10T428/115
摘要： A hard bias layer that forms an abutting junction with a free layer in a GMR element and is comprised of FePtCu or FePtCuX where X is B, C, O, Si, or N is disclosed. The FePtCu layer has a composition of about 45 atomic % Fe, 45 atomic % Pt, and 10 atomic % Cu and does not require a seed layer to achieve an ordered structure. The FePtCu layer is annealed at a temperature of about 280° C. and has an Hc value more than double that of a conventional CoCrPt hard bias layer with a similar thickness. Since the FePtCu hard bias layer adjoins a free layer, it has a higher sensor edge pinning efficiency than a configuration with a CoCrPt layer on a seed layer. The novel hard bias layer is compatible with either a top or bottom spin valve structure in a GMR sensor.
摘要翻译：公开了与GMR元件中的自由层形成邻接连接并由FePtCu或FePtCuX组成的硬偏置层，其中X是B，C，O，Si或N。 FePtCu层具有约45原子％Fe，45原子％Pt和10原子％Cu的组成，并且不需要种子层来实现有序结构。 FePtCu层在约280℃的温度下进行退火，并且其Hc值大于具有相似厚度的常规CoCrPt硬偏压层的Hc值的两倍以上。由于FePtCu硬偏置层与自由层相邻，因此与种子层上的CoCrPt层的配置相比，传感器边缘钉扎效率更高。新颖的硬偏置层与GMR传感器中的顶部或底部自旋阀结构兼容。

7. 发明授权

US07529067B2 Exchange bias structure for abutted junction GMR sensor 失效
标题翻译：对接结GMR传感器的交换偏置结构
公开(公告)号：US07529067B2
公开(公告)日：2009-05-05
申请号：US11375323
申请日：2006-03-14
申请人： Yun-Fei Li , Hui-Chuan Wang , Chyu-Jiuh Torng , Cherng-Chyi Han , Mao-Min Chen
发明人： Yun-Fei Li , Hui-Chuan Wang , Chyu-Jiuh Torng , Cherng-Chyi Han , Mao-Min Chen
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3163 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： Although it is known that exchange bias can be utilized in abutted junctions for longitudinal stabilization, a relatively large moment is needed to pin down the sensor edges effectively. Due to the inverse dependence of the exchange bias on the magnetic layer thickness, a large exchange bias has been difficult to achieve by the prior art. This problem has been solved by introducing a structure in which the magnetic moment of the bias layer has been approximately doubled by pinning it from both above and below through exchange with antiferromagnetic layers. Additionally, since the antiferromagnetic layer is in direct abutted contact with the free layer, it acts directly to help stabilize the sensor edge, which is an advantage over the traditional magnetostatic pinning that had been used.
摘要翻译：虽然已知交换偏压可用于邻接接头用于纵向稳定化，但是需要相对较大的力矩来有效地将传感器边缘压下。由于交换偏压对磁性层厚度的反向依赖性，现有技术难以实现大的交换偏压。通过引入通过与反铁磁层交换而将偏压层的磁矩从上下两端钉住而将偏置层的磁矩大致加倍的结构已经解决了这个问题。另外，由于反铁磁层直接与自由层接触，所以它直接作用以帮助稳定传感器边缘，这是相对于已经使用的传统静磁钉扎的优点。

8. 发明授权

US07320169B2 Self-pinned GMR structure by annealing 失效
标题翻译：通过退火自固定GMR结构
公开(公告)号：US07320169B2
公开(公告)日：2008-01-22
申请号：US10846406
申请日：2004-05-14
申请人： Yun-Fei Li , Hui-Chuan Wang , Tong Zhao , Chyu-Jiuh Torng
发明人： Yun-Fei Li , Hui-Chuan Wang , Tong Zhao , Chyu-Jiuh Torng
IPC分类号： G11B5/31 , G11B5/39 , G11B5/147
CPC分类号： B82Y25/00 , B82Y40/00 , H01F10/3268 , H01F41/304 , Y10T29/49044
摘要： In a conventional spin valve the shunt resistance of the pinning layer reduces the overall efficiency of the device. This problem has been overcome by using IrMn for the pinning layer at a thickness of about 20 Angstroms or less. For the IrMn to be fully effective it must be subjected to a two-step anneal, first in the presence of a high field (about 10 kOe) for several hours and then in a low field (about 500 Oe) while it cools. The result, in addition to improved pinning, is the ability to do testing at the full film and full wafer levels.
摘要翻译：在传统的自旋阀中，钉扎层的分流电阻降低了器件的整体效率。通过使用IrMn作为钉扎层的约20埃或更小的厚度已经克服了这个问题。为了使IrMn完全有效，必须先进行两步退火，首先在高场（约10kOe）存在数小时，然后在低场（约500Oe）的温度下冷却。结果，除了改进钉扎之外，还可以在整个薄膜和全晶圆级别进行测试。

9. 发明授权

US06870711B1 Double layer spacer for antiparallel pinned layer in CIP/CPP GMR and MTJ devices 失效
标题翻译：在CIP / CPP GMR和MTJ器件中用于反平行钉扎层的双层间隔物
公开(公告)号：US06870711B1
公开(公告)日：2005-03-22
申请号：US10863406
申请日：2004-06-08
申请人： Tong Zhao , Hui-Chuan Wang , Yun-Fei Li , Chyu-Jiuh Torng
发明人： Tong Zhao , Hui-Chuan Wang , Yun-Fei Li , Chyu-Jiuh Torng
IPC分类号： G11B5/39 , G11B5/127
CPC分类号： G11B5/39 , Y10T29/49044
摘要： A pinned/pinning layer configuration of the form: AP1/coupling bilayer/AP2/AFM, suitable for use in a CIP or CPP GMR sensor, a TMR sensor or an MRAM element, is found to have improved magnetic stability, yield good values of dR/R and have high values of saturation magnetization that can be adjusted to meet the requirements of magnetic field annealing. The coupling bilayer is a layer of Ru/Rh or their alloys, which provides a wide range of coupling strengths by varying either the thickness of the Ru layer or the Rh layer.
摘要翻译：发现适用于CIP或CPP GMR传感器，TMR传感器或MRAM元件的AP1 /耦合双层/ AP2 / AFM的钉扎/钉扎层配置具有改善的磁稳定性，产生良好的值 dR / R，并且具有高的饱和磁化值，可以调节以满足磁场退火的要求。耦合双层是Ru / Rh或其合金层，其通过改变Ru层或Rh层的厚度来提供宽范围的耦合强度。

10. 发明授权

US07099125B2 Easily manufactured exchange bias stabilization scheme 失效
公开(公告)号：US07099125B2
公开(公告)日：2006-08-29
申请号：US11268074
申请日：2005-11-07
申请人： Yun-Fei Li , Hui-Chuan Wang , Chyu-Jiuh Torng , Cherng Chyi Han
发明人： Yun-Fei Li , Hui-Chuan Wang , Chyu-Jiuh Torng , Cherng Chyi Han
IPC分类号： G11B5/39 , G11B5/147
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3116 , G11B5/3143 , G11B5/3163 , G11B5/3903 , G11B2005/3996 , Y10T29/49032 , Y10T29/49044 , Y10T29/49046
摘要： A problem associated with current bottom spin valve designs is that it is difficult to avoid magnetic charge accumulation at the edge of the sensor area, making a coherent spin rotation during sensing difficult to achieve. This problem has been eliminated by introducing an exchange coupling layer between the free layer and the ferromagnetic layer that is used to achieve longitudinal bias for stabilization and by extending the free layer well beyond the sensor area. After all layers have been deposited, the read gap is formed by etching down as far as this layer. Since it is not critical exactly how much of the biasing layers (antiferromagnetic as well as ferromagnetic) are removed, the etching requirements are greatly relaxed. Whatever material remains in the gap is then oxidized thereby providing a capping layer as well as a good interface for specular reflection in the sensor region.

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