会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明授权
    • Damascene write poles produced via full film plating
    • 大马士革通过全电镀制作电极
    • US08486285B2
    • 2013-07-16
    • US12544998
    • 2009-08-20
    • Ronghui ZhouMing JiangXiaohai XiangJinwen WangGuanghong LuoYun-Fei Li
    • Ronghui ZhouMing JiangXiaohai XiangJinwen WangGuanghong LuoYun-Fei Li
    • B44C1/22
    • G11B5/855Y10T29/49048
    • A method for forming a write pole comprises forming a stop layer over a substrate layer of a wafer, the stop layer having an opening above a damascene trench in the substrate layer, and forming a buffer layer over the stop layer, the buffer layer having an opening above the opening of the stop layer. The method further comprises plating a layer of magnetic material over the wafer, disposing a first sacrificial material over a region of the magnetic material above the damascene trench, performing a milling or etching operation over the wafer to remove the magnetic material not covered by the first sacrificial material and to remove the first sacrificial material, disposing a second sacrificial material over the wafer, and performing a polishing operation over the wafer to remove the region of the magnetic material above the damascene trench, the second sacrificial material, and the buffer layer.
    • 用于形成写极的方法包括在晶片的衬底层上形成阻挡层,所述阻挡层在衬底层中具有在镶嵌沟槽上方的开口,以及在停止层上形成缓冲层,所述缓冲层具有 在停止层的开口上方开口。 该方法还包括在晶片上镀覆一层磁性材料,在金刚石沟槽上方的磁性材料的区域上设置第一牺牲材料,在晶片上进行研磨或蚀刻操作,以去除第一 牺牲材料并且去除第一牺牲材料,在晶片上设置第二牺牲材料,以及在晶片上执行抛光操作以去除镶嵌沟槽,第二牺牲材料和缓冲层之上的磁性材料的区域。
    • 3. 发明授权
    • Methods of producing damascene main pole for perpendicular magnetic recording head
    • 生产用于垂直磁记录头的镶嵌主极的方法
    • US08262918B1
    • 2012-09-11
    • US12411270
    • 2009-03-25
    • Yun-Fei LiRonghui ZhouGuanghong LuoMing Jiang
    • Yun-Fei LiRonghui ZhouGuanghong LuoMing Jiang
    • B44C1/22
    • G11B5/1278G11B5/3116G11B5/3163
    • Methods of producing magnetic recording heads are disclosed. The methods can include providing a wafer comprising a substrate layer in which are disposed a plurality of damascene trenches. The method can further include depositing a pole material across the whole wafer, wherein the plurality of trenches are filled with the pole material. The methods can further include depositing a mask material over the pole material across the whole wafer. The methods can further include performing a first material removal process across the whole wafer to remove the mask material and a first portion of the pole material at a same material removal rate. The methods can further include performing a second material removal process to remove a second portion of the pole material above the substrate layer.
    • 公开了制造磁记录头的方法。 所述方法可以包括提供包括其中布置有多个镶嵌沟槽的基底层的晶片。 该方法还可以包括在整个晶片上沉积极材料,其中多个沟槽用极材料填充。 该方法还可以包括在整个晶片上沉积超过极材料的掩模材料。 该方法还可以包括在整个晶片上执行第一材料去除工艺,以相同的材料去除速率移除掩模材料和极材料的第一部分。 所述方法还可以包括执行第二材料去除工艺以去除衬底层上方的极材料的第二部分。
    • 5. 发明授权
    • Process for fabricating a magnetic pole and shields
    • 制造磁极和屏蔽的工艺
    • US08578594B2
    • 2013-11-12
    • US13154191
    • 2011-06-06
    • Ming JiangRonghui ZhouGuanghong LuoMasahiro OsugiDanning Yang
    • Ming JiangRonghui ZhouGuanghong LuoMasahiro OsugiDanning Yang
    • G11B5/127H04R31/00
    • G11B5/1278G11B5/3116G11B5/315G11B5/3163
    • A process for fabricating a magnetic recording transducer for use in a data storage system comprises providing a substrate, an underlayer and a first nonmagnetic intermediate layer deposited to a first thickness on and in contact with the underlayer, performing a first scanning polishing on a first section of the first intermediate layer to planarize the first section of the first intermediate layer to a second thickness, providing a main pole in the planarized first section of the first intermediate layer, providing a first pattern of photoresist on and in contact with the first section of the first intermediate layer, the pattern comprising an aperture to define a side shield trench, performing a wet etch to remove at least a portion of the first intermediate layer thereby exposing at least one of the plurality of main pole sides, and depositing side shield material in the side shield trench.
    • 一种用于制造用于数据存储系统的磁记录传感器的方法包括提供在底层上沉积到第一厚度并与底层接触的基底,底层和第一非磁性中间层,在第一部分上进行第一扫描抛光 将所述第一中间层的第一部分平坦化为第二厚度,在所述第一中间层的平坦化的第一部分中提供主极,在所述第一中间层的所述第一部分的第一部分上提供第一图案, 第一中间层,图案包括用于限定侧屏蔽沟槽的孔,执行湿蚀刻以去除第一中间层的至少一部分,从而暴露多个主极侧中的至少一个,以及沉积侧屏蔽材料 在侧盾沟。
    • 7. 发明授权
    • Method and system for providing a full wrap-around shield using a frame configured wet etch in a damascene process
    • 用于在镶嵌过程中使用框架配置的湿法蚀刻来提供全包裹屏蔽的方法和系统
    • US08454846B1
    • 2013-06-04
    • US12817376
    • 2010-06-17
    • Ronghui ZhouMing JiangDanning YangYun-Fei Li
    • Ronghui ZhouMing JiangDanning YangYun-Fei Li
    • B44C1/22G11B5/31
    • G11B5/3163G11B5/315
    • A method and system for fabricating magnetic recording transducer are described. The magnetic recording transducer has a main pole including a plurality of sides, an intermediate layer adjacent to the sides of the main pole, and a field region distal from the main pole. The method and system include providing at least one trench in the intermediate layer. The trench(es) are between the main pole and the field region. The method and system also include providing a stop layer. A portion of the stop layer resides in at least part of the trench(es) and on at least part of the field region. The method and system also include removing a portion of the intermediate layer using a wet etch. The stop layer is resistant to removal by the wet etch. The method and system also include depositing a full wrap-around shield layer on the main pole.
    • 描述了用于制造磁记录换能器的方法和系统。 磁记录传感器具有包括多个侧面的主极,与主极的侧面相邻的中间层和远离主极的场区域。 该方法和系统包括在中间层中提供至少一个沟槽。 沟槽在主极和场区之间。 该方法和系统还包括提供停止层。 停止层的一部分位于沟槽的至少一部分中,并且位于场区域的至少一部分上。 该方法和系统还包括使用湿蚀刻去除中间层的一部分。 止挡层耐湿蚀刻能够去除。 该方法和系统还包括在主极上沉积完整的环绕屏蔽层。
    • 9. 发明授权
    • Method and system for providing a magnetic recording transducer using a line hard mask and a wet-etchable mask
    • 用于使用线硬掩模和湿蚀刻掩模提供磁记录换能器的方法和系统
    • US08790524B1
    • 2014-07-29
    • US12880484
    • 2010-09-13
    • Guanghong LuoDanning YangMing Jiang
    • Guanghong LuoDanning YangMing Jiang
    • G11B5/127G11B5/31G11B5/11
    • G11B5/3116G11B5/112G11B5/3163G11B5/3903G11B5/3932
    • A method and system for fabricating a magnetic transducer is described. The transducer has device and field regions, and a magnetoresistive stack. Hard mask layer and wet-etchable layers are provided on the magnetoresistive stack and hard mask layer, respectively. A hard mask and a wet-etchable mask are formed from the hard mask and the wet-etchable layers, respectively. The hard and wet-etchable masks each includes a sensor portion and a line frame. The sensor portion covers part of the magnetoresistive stack corresponding to a magnetoresistive structure. The line frame covers a part of the magnetoresistive stack in the device region. The magnetoresistive structure is defined in a track width direction. Hard bias material(s) are then provided. Part of the hard bias material(s) is adjacent to the magnetoresistive structure in the track width direction. The wet-etchable sensor portion and line frame, and hard bias material(s) thereon, are removed.
    • 描述了用于制造磁换能器的方法和系统。 传感器具有器件和场区域以及磁阻堆叠。 硬掩模层和湿蚀刻层分别设置在磁阻堆叠和硬掩模层上。 分别由硬掩模和湿蚀刻层形成硬掩模和湿蚀刻掩模。 硬和湿可蚀刻掩模各自包括传感器部分和线框架。 传感器部分覆盖对应于磁阻结构的磁阻堆叠的一部分。 线框架覆盖设备区域中的磁阻堆叠的一部分。 磁阻结构被定义在磁道宽度方向上。 然后提供硬偏置材料。 硬偏置材料的一部分在磁道宽度方向上与磁阻结构相邻。 湿式可蚀刻传感器部分和线框架以及其上的硬偏移材料被去除。
    • 10. 发明授权
    • Double rie damascene process for nose length control
    • 用于鼻长度控制的双重镶嵌工艺
    • US08257597B1
    • 2012-09-04
    • US12717090
    • 2010-03-03
    • Lijie GuanChangqing ShiMing JiangYun-Fei Li
    • Lijie GuanChangqing ShiMing JiangYun-Fei Li
    • B44C1/22
    • G11B5/3163G11B5/3116Y10T29/49021Y10T29/49048
    • Methods of forming a write pole are disclosed. A first photomask having a first opening over one of a yoke region and a pole tip region of the write pole is formed over an insulation layer having an insulator material. A first etch process is performed on the insulation layer via the first opening, the first etch process removing the insulator material from a corresponding one of the yoke region and the pole tip region. A second photomask having a second opening over the other one of the yoke region and the pole tip region is formed over the insulation layer. A second etch process is performed on the insulation layer via the second opening, the second etch process removing the insulator material from a corresponding one of the yoke region and the pole tip region.
    • 公开了形成写极的方法。 在具有绝缘体材料的绝缘层上形成第一光掩模,其具有位于写磁极的磁轭区域和极尖区域之一上的第一开口。 通过第一开口在绝缘层上执行第一蚀刻工艺,第一蚀刻工艺从磁轭区域和极尖区域中的对应的一个去除绝缘体材料。 在绝缘层上形成第二光掩模,该第二光掩模具有位于轭区域和极尖区域另一个之上的第二开口。 经由第二开口在绝缘层上执行第二蚀刻工艺,第二蚀刻工艺从磁轭区域和极尖区域中的对应的一个去除绝缘体材料。