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1. 发明申请

US20080238553A1 POWER AMPLIFYING DEVICE HAVING LINEARIZER 失效
标题翻译：具有线性化的功率放大器件
公开(公告)号：US20080238553A1
公开(公告)日：2008-10-02
申请号：US12049005
申请日：2008-03-14
申请人： Yun Hee CHO , Chul Soon Park , Ji Hoon Kim , Yun Hwi Park
发明人： Yun Hee CHO , Chul Soon Park , Ji Hoon Kim , Yun Hwi Park
IPC分类号： H03F3/04
CPC分类号： H03F1/0266 , H03F1/32 , H03F2200/18
摘要： There is provided a power amplifying device having a linearizer in which a bias circuit has an initial impedance set when initially operated, then the impedance is varied according to a level of an input signal and the input signal is amplified in a broad range from a low level region to a high level region, thereby improving linearity of an output signal. The power amplifying device including: an amplifying unit receiving a bias power source and amplifying an input signal; a bias unit varying the bias power source according to a set impedance to provide to the amplifying unit; and an impedance setting unit setting the impedance of the bias unit in response to a preset control voltage when the bias unit is initially operated and re-setting the impedance of the bias unit according to a level of the input signal of the amplifying unit after initial operation of the bias unit.
摘要翻译：提供一种功率放大装置，其具有线性化装置，其中偏置电路在初始操作时具有设定的初始阻抗，然后根据输入信号的电平来改变阻抗，并且输入信号在低范围内被放大电平区域到高电平区域，从而提高输出信号的线性度。功率放大装置包括：放大单元，接收偏置电源并放大输入信号; 偏置单元根据设定的阻抗改变偏置电源以提供给放大单元; 以及阻抗设定单元，当偏置单元初始操作时，响应于预设的控制电压来设定偏置单元的阻抗，并根据放大单元的输入信号的电平在初始化之后重新设置偏置单元的阻抗偏置单元的操作。

2. 发明授权

US07692490B2 Power amplifying device having linearizer 失效
标题翻译：具有线性化的功率放大装置
公开(公告)号：US07692490B2
公开(公告)日：2010-04-06
申请号：US12049005
申请日：2008-03-14
申请人： Yun Hee Cho , Chul Soon Park , Ji Hoon Kim , Yun Hwi Park
发明人： Yun Hee Cho , Chul Soon Park , Ji Hoon Kim , Yun Hwi Park
IPC分类号： H03F3/04
CPC分类号： H03F1/0266 , H03F1/32 , H03F2200/18
摘要： There is provided a power amplifying device having a linearizer in which a bias circuit has an initial impedance set when initially operated, then the impedance is varied according to a level of an input signal and the input signal is amplified in a broad range from a low level region to a high level region, thereby improving linearity of an output signal. The power amplifying device including: an amplifying unit receiving a bias power source and amplifying an input signal; a bias unit varying the bias power source according to a set impedance to provide to the amplifying unit; and an impedance setting unit setting the impedance of the bias unit in response to a preset control voltage when the bias unit is initially operated and re-setting the impedance of the bias unit according to a level of the input signal of the amplifying unit after initial operation of the bias unit.
摘要翻译：提供一种功率放大装置，其具有线性化装置，其中偏置电路在初始操作时具有设定的初始阻抗，然后根据输入信号的电平来改变阻抗，并且输入信号在低范围内被放大电平区域到高电平区域，从而提高输出信号的线性度。功率放大装置包括：放大单元，接收偏置电源并放大输入信号; 偏置单元根据设定的阻抗改变偏置电源以提供给放大单元; 以及阻抗设定单元，当偏置单元初始操作时，响应于预设的控制电压来设定偏置单元的阻抗，并根据放大单元的输入信号的电平在初始化之后重新设置偏置单元的阻抗偏置单元的操作。

3. 发明授权

US06744321B2 Bias control circuit for power amplifier 失效
标题翻译：功率放大器偏置控制电路
公开(公告)号：US06744321B2
公开(公告)日：2004-06-01
申请号：US10387062
申请日：2003-03-11
申请人： Youn Sub Noh , Ji Hoon Kim , Chul Soon Park , Joon Hyung Kim
发明人： Youn Sub Noh , Ji Hoon Kim , Chul Soon Park , Joon Hyung Kim
IPC分类号： H03F304
CPC分类号： H03F1/0261 , H03F1/302 , H03F3/72 , H03F2200/18
摘要： A bias control circuit for a power amplifier including an RF amplifier having a transistor for power amplification, comprises two components. A first component is a bias circuit having an active bias transistor operating in an active mode and connected to a predetermined Vref pin to provide the transistor for power amplification with a base current and a second component is a bias current control circuit having another active bias transistor connected to a predetermined Vcon pin and turned on or off depending on a high or a low mode of the Vcon pin to thereby control a base current and a quiescent current of the transistor for power amplification.
摘要翻译：一种用于功率放大器的偏置控制电路，包括具有用于功率放大的晶体管的RF放大器，包括两个部件。第一分量是偏置电路，其具有以有源模式工作的有源偏置晶体管，并连接到预定的Vref引脚，以提供具有基极电流的功率放大的晶体管，而第二分量是具有另一有源偏置晶体管的偏置电流控制电路连接到预定的Vcon引脚，并根据Vcon引脚的高或低模式导通或截止，从而控制用于功率放大的晶体管的基极电流和静态电流。

4. 发明授权

US06803822B2 Power amplifier having a bias current control circuit 失效
标题翻译：功率放大器具有偏置电流控制电路
公开(公告)号：US06803822B2
公开(公告)日：2004-10-12
申请号：US10389053
申请日：2003-03-14
申请人： Ji Hoon Kim , Youn Sub Noh , Chul Soon Park , Joon Hyung Kim
发明人： Ji Hoon Kim , Youn Sub Noh , Chul Soon Park , Joon Hyung Kim
IPC分类号： H03F304
CPC分类号： H03F1/302 , H03F3/04 , H03F2200/18
摘要： A power amplifier for use in a mobile handset includes an amplifying transistor for generating an output of the mobile handset, a bias circuit having a bias transistor and providing a bias current to bias the amplifying transistor, and a bias current control circuit, responsive to a control signal, for adjusting the bias current to control an operation current of the amplifying transistor. The control signal is generated by the mobile handset, and the control signal is determined by a power level of the output of the mobile handset.
摘要翻译：一种用于移动手持机的功率放大器，包括用于产生移动手持机的输出的放大晶体管，具有偏置晶体管并提供偏置电流以偏置放大晶体管的偏置电路，以及偏置电流控制电路，响应于控制信号，用于调整偏置电流以控制放大晶体管的工作电流。控制信号由移动手持机生成，并且控制信号由移动手持机的输出的功率电平决定。

5. 发明授权

US6028876A High power semiconductor laser device and method for fabricating the same 失效
标题翻译：大功率半导体激光器件及其制造方法
公开(公告)号：US6028876A
公开(公告)日：2000-02-22
申请号：US976014
申请日：1997-11-21
申请人： Jung Kee Lee , Kyung Hyun Park , Ho Sung Cho , Dong Hoon Jang , Chul Soon Park
发明人： Jung Kee Lee , Kyung Hyun Park , Ho Sung Cho , Dong Hoon Jang , Chul Soon Park
IPC分类号： H01S5/00 , H01S3/0941 , H01S5/042 , H01S5/20 , H01S3/19
CPC分类号： H01S5/042 , H01S5/0425 , H01S5/2063
摘要： The present invention relates to high power semiconductor laser device and method for fabricating the same utilizing ion implanting process, by which a beam steering phenomenon of an optical output due to filaments is eliminated. This elimination is achieved by a periodically varying gain given for a resonator of the semiconductor laser device. That is, this invention changes a gain distribution which causes the generation of filaments in the resonator into different distribution. According to the present invention, there is formed an insulation layer through ion implantation to an active layer to adjust current density implanted to the active layer, thereby eliminating non-uniform distribution of the light along the longitudinal direction of the resonator.
摘要翻译：本发明涉及大功率半导体激光器件及其制造方法，该方法利用离子注入工艺，由此消除了由于细丝引起的光输出的光束转向现象。该消除通过对于半导体激光器件的谐振器给定的周期性变化的增益来实现。也就是说，本发明改变了使谐振器中的细丝产生不同分布的增益分布。根据本发明，通过离子注入形成有源层的绝缘层，以调节注入有源层的电流密度，从而消除光沿着谐振器纵向的不均匀分布。

6. 发明授权

US08183896B2 Resistive frequency mixing apparatus and signal processing method using the same 有权
标题翻译：电阻式混频装置及信号处理方法采用相同方式
公开(公告)号：US08183896B2
公开(公告)日：2012-05-22
申请号：US12289354
申请日：2008-10-27
申请人： Dong Yun Jung , Chul Soon Park
发明人： Dong Yun Jung , Chul Soon Park
IPC分类号： H03B19/00
CPC分类号： H04B1/28 , H03D7/125
摘要： A resistive frequency mixing apparatus includes a first frequency mixer having a source follower FET, and a second frequency mixer having a common source FET. The resistive frequency mixing apparatus perform a frequency mixing of an RF depending on an LO signal to generate a down-converted IF signal when the RF signal is applied to the source follower FET and the LO signal is applied to the common source FET. Further, the resistive frequency mixing apparatus performs a frequency mixing of an IF signal depending on an LO signal through the use of the source follower FET to produce an up-converted RF signal when the IF signal is applied to the common source FET and the LO signal is applied to the common source FET.
摘要翻译：电阻式混频装置包括具有源极跟随器FET的第一混频器和具有公共源极FET的第二混频器。电阻式混频装置根据LO信号进行RF的混频，以在将RF信号施加到源极跟随器FET时产生下变频的IF信号，并将LO信号施加到公共源FET。此外，电阻式混频装置通过使用源极跟随器FET来执行根据LO信号的IF信号的混频，以在IF信号施加到公共源FET和LO时产生上变频的RF信号信号被施加到公共源FET。

7. 发明授权

US07030701B2 Transimpedance amplification apparatus with source follower structure 失效
标题翻译：具有源极跟随结构的互阻放大装置
公开(公告)号：US07030701B2
公开(公告)日：2006-04-18
申请号：US10735738
申请日：2003-12-16
申请人： Dong Yun Jung , Sang-Hyun Park , Chul Soon Park
发明人： Dong Yun Jung , Sang-Hyun Park , Chul Soon Park
IPC分类号： H03F3/08
CPC分类号： H03F3/082 , H03F3/3455
摘要： A transimpedance amplification apparatus includes a signal source for generating a current signal, a source follower stage, a common source stage and a shunt feedback resistor. The source follower stage having a source follower structure receives the current signal to reduce an impedance of the signal source. The common source stage, following the source follower stage, driven by the reduced signal source impedance, amplifies the current signal to extend a frequency bandwidth of the current signal and buffers the amplified signal with the extended frequency bandwidth thereof maintained, wherein the reduced signal source impedance serves to extend a frequency bandwidth of the common source stage. The shunt feedback resistor, which is installed between the source follower stage and the common source stage, adjusts an input DC bias of the source follower stage and increasing a transimpedance gain of the common source stage.
摘要翻译：跨阻放大装置包括用于产生电流信号的信号源，源极跟随器级，公共源级和并联反馈电阻。具有源极跟随器结构的源极跟随器级接收电流信号以减小信号源的阻抗。在源极跟随器级之后，由信号源阻抗降低驱动的公共源极级放大电流信号以扩展电流信号的频率带宽，并且缓冲放大的信号，其中保持扩展的频率带宽，其中减小的信号源阻抗用于扩展公共源极级的频率带宽。安装在源极跟随器级和公共源极级之间的并联反馈电阻调节源极跟随器级的输入直流偏置并增加公共源级的跨阻增益。

8. 发明授权

US07005923B2 Adaptive bias circuit for a power amplifier 失效
标题翻译：功率放大器的自适应偏置电路
公开(公告)号：US07005923B2
公开(公告)日：2006-02-28
申请号：US10762185
申请日：2004-01-22
申请人： Youn Sub Noh , Chul Soon Park
发明人： Youn Sub Noh , Chul Soon Park
IPC分类号： H03G3/10
CPC分类号： H03F1/302 , H03F1/0261 , H03G3/3042
摘要： An adaptive bias circuit is provided for an amplifier module including a RF power amplifier for amplifying an input signal to generate an output signal, wherein the bias circuit receives the input signal to adjust a driving current to control a quiescent current of the RF power amplifier. The adaptive bias circuit includes means for providing the driving current to the bias circuit and means for drawing a bypass current from the providing means to reduce the driving current in response to the input signal, wherein the quiescent current is reduced when the driving current is reduced and the bypass current increases when the input signal is reduced.
摘要翻译：提供一种用于放大器模块的自适应偏置电路，该放大器模块包括用于放大输入信号以产生输出信号的RF功率放大器，其中偏置电路接收输入信号以调节驱动电流以控制RF功率放大器的静态电流。自适应偏置电路包括用于向偏置电路提供驱动电流的装置和用于从提供装置抽出旁路电流的装置，以响应于输入信号减小驱动电流，其中当驱动电流减小时，静态电流减小并且当输入信号减小时旁路电流增加。

9. 发明授权

US08022784B2 Planar transmission line-to-waveguide transition apparatus having an embedded bent stub 失效
标题翻译：具有嵌入式弯曲短截线的平面传输线对波导转换装置
公开(公告)号：US08022784B2
公开(公告)日：2011-09-20
申请号：US12433116
申请日：2009-04-30
申请人： Jae Jin Lee , Chul Soon Park , Dong Yun Jung , Ki Chan Eun
发明人： Jae Jin Lee , Chul Soon Park , Dong Yun Jung , Ki Chan Eun
IPC分类号： H01P5/107
CPC分类号： H01P5/107
摘要： A wireless communication module includes a plurality of monolithic millimeter-wave integrated circuits (MMICs) for signal processing attached to the top surface of a multi-layer low temperature co-fired ceramic substrate; a planar transmission line formed on the top surface of the multi-layer substrate for communications between the MMICs; a metal base attached to the bottom surface of the multi-layer substrate and having an opening to which an antenna is attached; a plurality of vias for connecting the metal base and the planar transmission line within the multi-layer substrate to establish a uniform potential on a ground plane of the multi-layer substrate; an embedded waveguide formed in the opening surrounded with the vias within the multi-layer substrate; and a planar transmission line-to-waveguide transition apparatus for the transition of waves between the planar transmission line and the embedded waveguide.
摘要翻译：无线通信模块包括多个单层毫米波集成电路（MMIC），用于信号处理，附接到多层低温共烧陶瓷衬底的顶表面; 形成在所述多层基板的上表面上用于MMIC之间的通信的平面传输线; 金属基底，附着在多层基板的底面上，并具有安装有天线的开口; 用于连接多层基板内的金属基底和平面传输线的多个通孔，以在多层基底的接地平面上建立均匀的电位; 在所述开口中形成的嵌入式波导，所述开口被所述多层基板内的通孔包围; 以及用于在平面传输线和嵌入式波导之间转换波的平面传输线到波导转换装置。

10. 发明申请

US20090181634A1 Resistive frequency mixing apparatus and signal processing method using the same 有权
标题翻译：电阻式混频装置及信号处理方法采用相同方式
公开(公告)号：US20090181634A1
公开(公告)日：2009-07-16
申请号：US12289354
申请日：2008-10-27
申请人： Dong Yun Jung , Chul Soon Park
发明人： Dong Yun Jung , Chul Soon Park
IPC分类号： H04B1/28
CPC分类号： H04B1/28 , H03D7/125
摘要： A resistive frequency mixing apparatus includes a first frequency mixer having a source follower FET, and a second frequency mixer having a common source FET. The resistive frequency mixing apparatus perform a frequency mixing of an RF depending on an LO signal to generate a down-converted IF signal when the RF signal is applied to the source follower FET and the LO signal is applied to the common source FET. Further, the resistive frequency mixing apparatus performs a frequency mixing of an IF signal depending on an LO signal through the use of the source follower FET to produce an up-converted RF signal when the IF signal is applied to the common source FET and the LO signal is applied to the common source FET.
摘要翻译：电阻式混频装置包括具有源极跟随器FET的第一混频器和具有公共源极FET的第二混频器。电阻式混频装置根据LO信号进行RF的混频，以在将RF信号施加到源极跟随器FET时产生下变频的IF信号，并将LO信号施加到公共源FET。此外，电阻式混频装置通过使用源极跟随器FET来执行根据LO信号的IF信号的混频，以在IF信号施加到公共源FET和LO时产生上变频的RF信号信号被施加到公共源FET。

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