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1. 发明申请

US20100090780A1 Phase shifter 审中-公开
标题翻译：移相器
公开(公告)号：US20100090780A1
公开(公告)日：2010-04-15
申请号：US12588432
申请日：2009-10-15
申请人： In Sang Song , Chul Soon Park , Dong Yun Jung , Ki Chan Eun , Jae Jin Lee , Seong Jun Cho
发明人： In Sang Song , Chul Soon Park , Dong Yun Jung , Ki Chan Eun , Jae Jin Lee , Seong Jun Cho
IPC分类号： H01P1/18
CPC分类号： H01P1/184
摘要： A phase shifter includes a substrate; a signal line formed on a specific region in an upper surface of the substrate; and an air gap which is formed within the substrate and changes effective permittivity of the substrate to delay phase of a signal supplied to the signal line. The phase shifter delays a phase of a signal by controlling effective permittivity using an air gap, thereby having outstandingly low insertion loss as compared to existing phase shifters. Further, the phase shifter can be manufactured in a same length as a reference line so that the phase shifter can be in a compact size.
摘要翻译：移相器包括基板; 形成在所述基板的上表面的特定区域上的信号线; 以及形成在衬底内的气隙，并且改变衬底的有效介电常数以延迟提供给信号线的信号的相位。移相器通过使用气隙控制有效介电常数来延迟信号的相位，从而与现有的移相器相比具有非常低的插入损耗。此外，移相器可以制造成与参考线相同的长度，使得移相器可以是紧凑的尺寸。

2. 发明授权

US08183896B2 Resistive frequency mixing apparatus and signal processing method using the same 有权
标题翻译：电阻式混频装置及信号处理方法采用相同方式
公开(公告)号：US08183896B2
公开(公告)日：2012-05-22
申请号：US12289354
申请日：2008-10-27
申请人： Dong Yun Jung , Chul Soon Park
发明人： Dong Yun Jung , Chul Soon Park
IPC分类号： H03B19/00
CPC分类号： H04B1/28 , H03D7/125
摘要： A resistive frequency mixing apparatus includes a first frequency mixer having a source follower FET, and a second frequency mixer having a common source FET. The resistive frequency mixing apparatus perform a frequency mixing of an RF depending on an LO signal to generate a down-converted IF signal when the RF signal is applied to the source follower FET and the LO signal is applied to the common source FET. Further, the resistive frequency mixing apparatus performs a frequency mixing of an IF signal depending on an LO signal through the use of the source follower FET to produce an up-converted RF signal when the IF signal is applied to the common source FET and the LO signal is applied to the common source FET.
摘要翻译：电阻式混频装置包括具有源极跟随器FET的第一混频器和具有公共源极FET的第二混频器。电阻式混频装置根据LO信号进行RF的混频，以在将RF信号施加到源极跟随器FET时产生下变频的IF信号，并将LO信号施加到公共源FET。此外，电阻式混频装置通过使用源极跟随器FET来执行根据LO信号的IF信号的混频，以在IF信号施加到公共源FET和LO时产生上变频的RF信号信号被施加到公共源FET。

3. 发明授权

US07030701B2 Transimpedance amplification apparatus with source follower structure 失效
标题翻译：具有源极跟随结构的互阻放大装置
公开(公告)号：US07030701B2
公开(公告)日：2006-04-18
申请号：US10735738
申请日：2003-12-16
申请人： Dong Yun Jung , Sang-Hyun Park , Chul Soon Park
发明人： Dong Yun Jung , Sang-Hyun Park , Chul Soon Park
IPC分类号： H03F3/08
CPC分类号： H03F3/082 , H03F3/3455
摘要： A transimpedance amplification apparatus includes a signal source for generating a current signal, a source follower stage, a common source stage and a shunt feedback resistor. The source follower stage having a source follower structure receives the current signal to reduce an impedance of the signal source. The common source stage, following the source follower stage, driven by the reduced signal source impedance, amplifies the current signal to extend a frequency bandwidth of the current signal and buffers the amplified signal with the extended frequency bandwidth thereof maintained, wherein the reduced signal source impedance serves to extend a frequency bandwidth of the common source stage. The shunt feedback resistor, which is installed between the source follower stage and the common source stage, adjusts an input DC bias of the source follower stage and increasing a transimpedance gain of the common source stage.
摘要翻译：跨阻放大装置包括用于产生电流信号的信号源，源极跟随器级，公共源级和并联反馈电阻。具有源极跟随器结构的源极跟随器级接收电流信号以减小信号源的阻抗。在源极跟随器级之后，由信号源阻抗降低驱动的公共源极级放大电流信号以扩展电流信号的频率带宽，并且缓冲放大的信号，其中保持扩展的频率带宽，其中减小的信号源阻抗用于扩展公共源极级的频率带宽。安装在源极跟随器级和公共源极级之间的并联反馈电阻调节源极跟随器级的输入直流偏置并增加公共源级的跨阻增益。

4. 发明授权

US06914488B2 Broadband amplification apparatus for bandwidth expansion 失效
标题翻译：用于带宽扩展的宽带放大装置
公开(公告)号：US06914488B2
公开(公告)日：2005-07-05
申请号：US10613362
申请日：2003-07-03
申请人： Sang-Hyun Park , Dong Yun Jung , Chul Soon Park
发明人： Sang-Hyun Park , Dong Yun Jung , Chul Soon Park
IPC分类号： H03F1/42 , H03F1/48 , H03F3/343 , H03F3/68
CPC分类号： H03F1/48 , H03F3/3432 , H03F2200/36
摘要： A broadband amplification apparatus for extending a bandwidth includes a first and a second amplifying unit for amplifying an input signal, a buffering unit and a first inductive buffer. The buffering unit disposed between the first and the second amplifying unit buffers an output signal of the first amplifying unit to thereby maintain a bandwidth of the output signal, increases a gain and returns back a portion of the buffered signal to the first amplifying unit. The first inductive buffer, which is connected to the buffer unit, enhances input impedance as a frequency increases within a predetermined range, thereby introducing little gain changes while serving to extend a bandwidth.
摘要翻译：用于扩展带宽的宽带放大装置包括用于放大输入信号的第一和第二放大单元，缓冲单元和第一感应缓冲器。布置在第一和第二放大单元之间的缓冲单元缓冲第一放大单元的输出信号，从而保持输出信号的带宽，增加增益并将缓冲信号的一部分返回到第一放大单元。连接到缓冲单元的第一电感缓冲器在频率在预定范围内增加时增强输入阻抗，从而在扩展带宽的同时引入很少的增益变化。

5. 发明授权

US08022784B2 Planar transmission line-to-waveguide transition apparatus having an embedded bent stub 失效
标题翻译：具有嵌入式弯曲短截线的平面传输线对波导转换装置
公开(公告)号：US08022784B2
公开(公告)日：2011-09-20
申请号：US12433116
申请日：2009-04-30
申请人： Jae Jin Lee , Chul Soon Park , Dong Yun Jung , Ki Chan Eun
发明人： Jae Jin Lee , Chul Soon Park , Dong Yun Jung , Ki Chan Eun
IPC分类号： H01P5/107
CPC分类号： H01P5/107
摘要： A wireless communication module includes a plurality of monolithic millimeter-wave integrated circuits (MMICs) for signal processing attached to the top surface of a multi-layer low temperature co-fired ceramic substrate; a planar transmission line formed on the top surface of the multi-layer substrate for communications between the MMICs; a metal base attached to the bottom surface of the multi-layer substrate and having an opening to which an antenna is attached; a plurality of vias for connecting the metal base and the planar transmission line within the multi-layer substrate to establish a uniform potential on a ground plane of the multi-layer substrate; an embedded waveguide formed in the opening surrounded with the vias within the multi-layer substrate; and a planar transmission line-to-waveguide transition apparatus for the transition of waves between the planar transmission line and the embedded waveguide.
摘要翻译：无线通信模块包括多个单层毫米波集成电路（MMIC），用于信号处理，附接到多层低温共烧陶瓷衬底的顶表面; 形成在所述多层基板的上表面上用于MMIC之间的通信的平面传输线; 金属基底，附着在多层基板的底面上，并具有安装有天线的开口; 用于连接多层基板内的金属基底和平面传输线的多个通孔，以在多层基底的接地平面上建立均匀的电位; 在所述开口中形成的嵌入式波导，所述开口被所述多层基板内的通孔包围; 以及用于在平面传输线和嵌入式波导之间转换波的平面传输线到波导转换装置。

6. 发明申请

US20090181634A1 Resistive frequency mixing apparatus and signal processing method using the same 有权
标题翻译：电阻式混频装置及信号处理方法采用相同方式
公开(公告)号：US20090181634A1
公开(公告)日：2009-07-16
申请号：US12289354
申请日：2008-10-27
申请人： Dong Yun Jung , Chul Soon Park
发明人： Dong Yun Jung , Chul Soon Park
IPC分类号： H04B1/28
CPC分类号： H04B1/28 , H03D7/125
摘要： A resistive frequency mixing apparatus includes a first frequency mixer having a source follower FET, and a second frequency mixer having a common source FET. The resistive frequency mixing apparatus perform a frequency mixing of an RF depending on an LO signal to generate a down-converted IF signal when the RF signal is applied to the source follower FET and the LO signal is applied to the common source FET. Further, the resistive frequency mixing apparatus performs a frequency mixing of an IF signal depending on an LO signal through the use of the source follower FET to produce an up-converted RF signal when the IF signal is applied to the common source FET and the LO signal is applied to the common source FET.
摘要翻译：电阻式混频装置包括具有源极跟随器FET的第一混频器和具有公共源极FET的第二混频器。电阻式混频装置根据LO信号进行RF的混频，以在将RF信号施加到源极跟随器FET时产生下变频的IF信号，并将LO信号施加到公共源FET。此外，电阻式混频装置通过使用源极跟随器FET来执行根据LO信号的IF信号的混频，以在IF信号施加到公共源FET和LO时产生上变频的RF信号信号被施加到公共源FET。

7. 发明授权

US07264987B2 Method of fabricating optoelectronic integrated circuit chip 失效
标题翻译：制造光电集成电路芯片的方法
公开(公告)号：US07264987B2
公开(公告)日：2007-09-04
申请号：US11012699
申请日：2004-12-16
申请人： Eun Soo Nam , Ho Young Kim , Myoung Sook Oh , Dong Yun Jung , Seon Eui Hong , Kyoung Ik Cho
发明人： Eun Soo Nam , Ho Young Kim , Myoung Sook Oh , Dong Yun Jung , Seon Eui Hong , Kyoung Ik Cho
IPC分类号： H01L21/00
CPC分类号： H01L29/66318 , H01L31/109 , H01L31/1105
摘要： Provided is a method of fabricating an optoelectronic integrated circuit chip. In particular, a method of fabricating an optoelectronic integrated circuit chip is provided, in which an optical absorption layer of a wave-guide type optical detector is grown to be thicker than a collector layer of a hetero-junction bipolar transistor by using a selective area growth by metal organic chemical vapor deposition (MOCVD) method, and the wave-guide type optical detector and the hetero-junction bipolar transistor are integrated as a single chip on a semi-insulated InP substrate, thereby readily realizing the wave-guide type optical detector improved in quantum efficiency and having the ultra-high speed characteristics.
摘要翻译：提供一种制造光电集成电路芯片的方法。特别地，提供了一种制造光电集成电路芯片的方法，其中通过使用选择区域，波导型光学检测器的光吸收层生长成比异质结双极晶体管的集电极层厚通过金属有机化学气相沉积（MOCVD）方法的生长，波导型光检测器和异质结双极晶体管作为单芯片集成在半绝缘InP衬底上，从而容易实现波导型光检测器提高了量子效率并具有超高速特性。

8. 发明申请

US20050170549A1 Method of fabricating optoelectronic integrated circuit chip 失效
标题翻译：制造光电集成电路芯片的方法
公开(公告)号：US20050170549A1
公开(公告)日：2005-08-04
申请号：US11012699
申请日：2004-12-16
申请人： Eun Soo Nam , Ho Young Kim , Myoung Sook Oh , Dong Yun Jung , Seon Hong , Kyoung Ik Cho
发明人： Eun Soo Nam , Ho Young Kim , Myoung Sook Oh , Dong Yun Jung , Seon Hong , Kyoung Ik Cho
IPC分类号： H01L21/331 , H01L31/109 , H01L31/11 , H01L21/00 , H01L29/732 , H01L31/0328 , H01L31/0336 , H01L31/072
CPC分类号： H01L29/66318 , H01L31/109 , H01L31/1105
摘要： Provided is a method of fabricating an optoelectronic integrated circuit chip. In particular, a method of fabricating an optoelectronic integrated circuit chip is provided, in which an optical absorption layer of a wave-guide type optical detector is grown to be thicker than a collector layer of a hetero-junction bipolar transistor by using a selective area growth by metal organic chemical vapor deposition (MOCVD) method, and the wave-guide type optical detector and the hetero-junction bipolar transistor are integrated as a single chip on a semi-insulated InP substrate, thereby readily realizing the wave-guide type optical detector improved in quantum efficiency and having the ultra-high speed characteristics.
摘要翻译：提供一种制造光电集成电路芯片的方法。特别地，提供了一种制造光电集成电路芯片的方法，其中通过使用选择区域，波导型光学检测器的光吸收层生长成比异质结双极晶体管的集电极层厚通过金属有机化学气相沉积（MOCVD）方法的生长，波导型光检测器和异质结双极晶体管作为单芯片集成在半绝缘InP衬底上，从而容易实现波导型光检测器提高了量子效率并具有超高速特性。

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