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1. 发明申请

US20120070924A1 METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
标题翻译：制造半导体发光器件的方法
公开(公告)号：US20120070924A1
公开(公告)日：2012-03-22
申请号：US12976492
申请日：2010-12-22
申请人： Su Hyoung SON , Kyoung Jin Kim , Won Keun Cho , Eun Mi Ko , Hyung Sun Hwang
发明人： Su Hyoung SON , Kyoung Jin Kim , Won Keun Cho , Eun Mi Ko , Hyung Sun Hwang
IPC分类号： H01L33/44 , H01L33/50
CPC分类号： H01L33/007 , H01L33/22
摘要： Disclosed is a method for manufacturing a semiconductor light-emitting device, which carries out a wet-etching process after a dry-etching process so as to form protrusions in a surface of a substrate for growing a nitride semiconductor material thereon. The method comprises coating a substrate with photoresist; forming a mask pattern on the substrate by selectively removing the photoresist; forming protrusions on the substrate by dry-etching the substrate with the mask pattern through the use of etching gas; wet-etching the dry-etched substrate through the use of etching solution; forming a first semiconductor layer on the substrate including the protrusions; forming an active layer on the first semiconductor layer; forming a second semiconductor layer on the active layer; etching predetermined portions of the active layer and second semiconductor layer until the first semiconductor layer is exposed; and forming a first electrode on a predetermined portion of the first semiconductor layer, wherein the active layer and second semiconductor layer are not formed on the predetermined portion of the first semiconductor layer, and forming a second electrode on the second semiconductor layer.
摘要翻译：公开了一种半导体发光器件的制造方法，该半导体发光器件在干蚀刻工艺之后进行湿蚀刻工艺，以在其上形成氮化物半导体材料的衬底的表面中形成突起。该方法包括用光刻胶涂覆基底; 通过选择性地除去光致抗蚀剂在衬底上形成掩模图案; 通过使用蚀刻气体通过用掩模图案干蚀刻基板在基板上形成突起; 通过使用蚀刻溶液湿法蚀刻干蚀刻基板; 在包括所述突起的所述基板上形成第一半导体层; 在所述第一半导体层上形成有源层; 在所述有源层上形成第二半导体层; 蚀刻有源层和第二半导体层的预定部分直到暴露第一半导体层; 以及在所述第一半导体层的预定部分上形成第一电极，其中所述有源层和所述第二半导体层未形成在所述第一半导体层的所述预定部分上，并且在所述第二半导体层上形成第二电极。

2. 发明申请

US20110140127A1 SEMI-CONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THEREOF 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20110140127A1
公开(公告)日：2011-06-16
申请号：US12837274
申请日：2010-07-15
申请人： Su Hyoung Son , Kyoung Jin Kim , Eun Mi Ko , Ung Lee
发明人： Su Hyoung Son , Kyoung Jin Kim , Eun Mi Ko , Ung Lee
IPC分类号： H01L33/02 , H01L33/00 , H01L33/26
CPC分类号： H01L33/22 , H01L33/007
摘要： A semiconductor light-emitting device and a method for manufacturing the same is disclosed, which improves light extraction efficiency by forming a plurality of protrusions on a surface of a substrate for growing a nitride semiconductor material thereon, the semiconductor light-emitting device comprising a substrate; one or more first protrusions on the substrate, each first protrusion having a recess through which a surface of the substrate is exposed planarly; a first semiconductor layer on the substrate including the first protrusions; an active layer on the first semiconductor layer; a second semiconductor layer on the active layer; a first electrode on a predetermined portion of the first semiconductor layer, wherein the active layer and second semiconductor layer are not formed on the predetermined portion of the first semiconductor layer; and a second electrode on the second semiconductor layer.
摘要翻译：公开了一种半导体发光器件及其制造方法，其通过在用于在其上生长氮化物半导体材料的衬底的表面上形成多个突起而提高光提取效率，该半导体发光器件包括衬底 ; 一个或多个第一突起在基板上，每个第一突起具有凹槽，基板的表面通过该凹槽平面地露出; 在所述基板上的包括所述第一突起的第一半导体层; 在第一半导体层上的有源层; 有源层上的第二半导体层; 在所述第一半导体层的预定部分上的第一电极，其中所述有源层和所述第二半导体层不形成在所述第一半导体层的预定部分上; 和在第二半导体层上的第二电极。

3. 发明授权

US08298842B2 Method for manufacturing semiconductor light-emitting device 有权
标题翻译：半导体发光元件的制造方法
公开(公告)号：US08298842B2
公开(公告)日：2012-10-30
申请号：US12976492
申请日：2010-12-22
申请人： Su Hyoung Son , Kyoung Jin Kim , Won Keun Cho , Eun Mi Ko , Hyung Sun Hwang
发明人： Su Hyoung Son , Kyoung Jin Kim , Won Keun Cho , Eun Mi Ko , Hyung Sun Hwang
IPC分类号： H01L21/00
CPC分类号： H01L33/007 , H01L33/22
摘要： Disclosed is a method for manufacturing a semiconductor light-emitting device, which carries out a wet-etching process after a dry-etching process so as to form protrusions in a surface of a substrate for growing a nitride semiconductor material thereon. The method comprises coating a substrate with photoresist; forming a mask pattern on the substrate by selectively removing the photoresist; forming protrusions on the substrate by dry-etching the substrate with the mask pattern through the use of etching gas; wet-etching the dry-etched substrate through the use of etching solution; forming a first semiconductor layer on the substrate including the protrusions; forming an active layer on the first semiconductor layer; forming a second semiconductor layer on the active layer; etching predetermined portions of the active layer and second semiconductor layer until the first semiconductor layer is exposed; and forming a first electrode on a predetermined portion of the first semiconductor layer, wherein the active layer and second semiconductor layer are not formed on the predetermined portion of the first semiconductor layer, and forming a second electrode on the second semiconductor layer.
摘要翻译：公开了一种半导体发光器件的制造方法，该半导体发光器件在干蚀刻工艺之后进行湿蚀刻工艺，以在其上形成氮化物半导体材料的衬底的表面中形成突起。该方法包括用光刻胶涂覆基底; 通过选择性地除去光致抗蚀剂在衬底上形成掩模图案; 通过使用蚀刻气体通过用掩模图案干蚀刻基板在基板上形成突起; 通过使用蚀刻溶液湿法蚀刻干蚀刻基板; 在包括所述突起的所述基板上形成第一半导体层; 在所述第一半导体层上形成有源层; 在所述有源层上形成第二半导体层; 蚀刻有源层和第二半导体层的预定部分直到暴露第一半导体层; 以及在所述第一半导体层的预定部分上形成第一电极，其中所述有源层和所述第二半导体层未形成在所述第一半导体层的所述预定部分上，并且在所述第二半导体层上形成第二电极。

4. 发明授权

US08519412B2 Semiconductor light-emitting device and method for manufacturing thereof 有权
标题翻译：半导体发光装置及其制造方法
公开(公告)号：US08519412B2
公开(公告)日：2013-08-27
申请号：US12837274
申请日：2010-07-15
申请人： Su Hyoung Son , Kyoung Jin Kim , Eun Mi Ko , Ung Lee
发明人： Su Hyoung Son , Kyoung Jin Kim , Eun Mi Ko , Ung Lee
IPC分类号： H01L33/00
CPC分类号： H01L33/22 , H01L33/007
摘要： A semiconductor light-emitting device and a method for manufacturing the same is disclosed, which improves light extraction efficiency by forming a plurality of protrusions on a surface of a substrate for growing a nitride semiconductor material thereon, the semiconductor light-emitting device comprising a substrate; one or more first protrusions on the substrate, each first protrusion having a recess through which a surface of the substrate is exposed planarly; a first semiconductor layer on the substrate including the first protrusions; an active layer on the first semiconductor layer; a second semiconductor layer on the active layer; a first electrode on a predetermined portion of the first semiconductor layer, wherein the active layer and second semiconductor layer are not formed on the predetermined portion of the first semiconductor layer; and a second electrode on the second semiconductor layer.
摘要翻译：公开了一种半导体发光器件及其制造方法，其通过在用于在其上生长氮化物半导体材料的衬底的表面上形成多个突起而提高光提取效率，该半导体发光器件包括衬底 ; 一个或多个第一突起在基板上，每个第一突起具有凹槽，基板的表面通过该凹槽平面地露出; 在所述基板上的包括所述第一突起的第一半导体层; 在第一半导体层上的有源层; 有源层上的第二半导体层; 在所述第一半导体层的预定部分上的第一电极，其中所述有源层和所述第二半导体层不形成在所述第一半导体层的预定部分上; 和在第二半导体层上的第二电极。

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