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1. 发明授权

US08426878B2 Semiconductor light emitting device and method for manufacturing same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US08426878B2
公开(公告)日：2013-04-23
申请号：US13531806
申请日：2012-06-25
申请人： Hidefumi Yasuda , Yuko Kato , Yasuharu Sugawara , Toshiyuki Terada , Kazuyoshi Furukawa
发明人： Hidefumi Yasuda , Yuko Kato , Yasuharu Sugawara , Toshiyuki Terada , Kazuyoshi Furukawa
IPC分类号： H01L33/60
CPC分类号： H01L33/60 , H01L33/0079 , H01L33/387 , H01L33/405 , H01L33/46
摘要： A semiconductor light emitting device includes: a support substrate; a metal layer provided on the support substrate; a semiconductor layer provided on the metal layer and including a light emitting layer; a contact layer containing a semiconductor, selectively provided between the semiconductor layer and the metal layer, and being in contact with the semiconductor layer and the metal layer; and an insulating film provided between the semiconductor layer and the metal layer at a position not overlapping the contact layer.
摘要翻译：一种半导体发光器件包括：支撑衬底; 设置在所述支撑基板上的金属层; 设置在所述金属层上并包括发光层的半导体层; 包含半导体的接触层，选择性地设置在所述半导体层和所述金属层之间，并与所述半导体层和所述金属层接触; 以及在不与接触层重叠的位置处在半导体层和金属层之间设置的绝缘膜。

2. 发明申请

US20120261707A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20120261707A1
公开(公告)日：2012-10-18
申请号：US13531806
申请日：2012-06-25
申请人： Hidefumi Yasuda , Yuko Kato , Yasuharu Sugawara , Toshiyuki Terada , Kazuyoshi Furukawa
发明人： Hidefumi Yasuda , Yuko Kato , Yasuharu Sugawara , Toshiyuki Terada , Kazuyoshi Furukawa
IPC分类号： H01L33/60
CPC分类号： H01L33/60 , H01L33/0079 , H01L33/387 , H01L33/405 , H01L33/46
摘要： A semiconductor light emitting device includes: a support substrate; a metal layer provided on the support substrate; a semiconductor layer provided on the metal layer and including a light emitting layer; a contact layer containing a semiconductor, selectively provided between the semiconductor layer and the metal layer, and being in contact with the semiconductor layer and the metal layer; and an insulating film provided between the semiconductor layer and the metal layer at a position not overlapping the contact layer.
摘要翻译：一种半导体发光器件包括：支撑衬底; 设置在所述支撑基板上的金属层; 设置在所述金属层上并包括发光层的半导体层; 包含半导体的接触层，选择性地设置在所述半导体层和所述金属层之间，并与所述半导体层和所述金属层接触; 以及在不与接触层重叠的位置处在半导体层和金属层之间设置的绝缘膜。

3. 发明申请

US20070114550A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 失效
标题翻译：半导体发光器件
公开(公告)号：US20070114550A1
公开(公告)日：2007-05-24
申请号：US11538646
申请日：2006-10-04
申请人： Yuko KATO , Hidefumi Yasuda , Kazuyoshi Furukawa
发明人： Yuko KATO , Hidefumi Yasuda , Kazuyoshi Furukawa
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/0079 , H01L33/08 , H01L33/38 , H01L33/405 , H01L33/42
摘要： A semiconductor light emitting device has a transparent layer having a first main surface and a second main surface at a side opposite to the first main surface, a plurality of light emitting sections arranged in at least one line on the first main surface of the transparent layer, each of the plurality of light emitting sections having an active layer and a tapered section, the tapered section reflecting light emitted from the active layer to the direction of the transparent layer, each of the plurality of light emitting sections having a central portion and a peripheral portion and having light intensity distribution on a second main surface of the transparent layer, on the second main surface of the transparent layer, light intensity at a region opposite to the peripheral portion being equal to or more than light intensity at a region opposite to the central portion, and a plurality of contact sections arranged opposite to the central portion on the second main surface of the transparent layer, each of the plurality of contact sections being opaque with respect to emission wavelengths of the plurality of light emitting sections.
摘要翻译：半导体发光器件具有在与第一主表面相对的一侧具有第一主表面和第二主表面的透明层，多个发光部分布置在透明层的第一主表面上的至少一条线上所述多个发光部中的每一个具有有源层和锥形部，所述锥形部将从所述有源层发射的光反射到所述透明层的方向，所述多个发光部中的每一个具有中心部和并且在透明层的第二主表面上具有光强度分布，在透明层的第二主表面上，与周边部分相反的区域处的光强度等于或大于与透明层相反的区域处的光强度中央部分和与透明物的第二主表面上的中心部分相对设置的多个接触部分多个接触部分中的每一个相对于多个发光部分的发射波长是不透明的。

4. 发明申请

US20050189556A1 Semiconductor light emitting device and method of manufacturing the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20050189556A1
公开(公告)日：2005-09-01
申请号：US11047666
申请日：2005-02-02
申请人： Hidefumi Yasuda , Yuko Kato , Kazuyoshi Furukawa
发明人： Hidefumi Yasuda , Yuko Kato , Kazuyoshi Furukawa
IPC分类号： H01L29/18 , H01L33/06 , H01L33/10 , H01L33/30 , H01L33/40 , H01L33/62
CPC分类号： H01L33/20 , H01L33/08 , H01L33/46
摘要： A semiconductor light emitting device comprises: a substrate having first and second major surfaces; a light emitting layer provided in a first portion on the first major surface of the substrate; a first electrode provided above the light emitting layer; a second electrode provided in a second portion on the first major surface of the substrate, the second portion being different from the first portion; and a protrusion provided on the second major surface of the substrate, the protrusion having a planar shape that reflects a planar shape of a light emitting area of the light emitting layer, the light emitting area being sandwiched between the first electrode and the second electrode and facing the protrusion.
摘要翻译：一种半导体发光器件包括：具有第一和第二主表面的衬底; 设置在所述基板的所述第一主表面上的第一部分中的发光层; 设置在所述发光层上方的第一电极; 设置在所述基板的所述第一主表面上的第二部分中的第二电极，所述第二部分不同于所述第一部分; 以及设置在所述基板的所述第二主表面上的突起，所述突起具有反映所述发光层的发光区域的平面形状的平面形状，所述发光区域夹在所述第一电极和所述第二电极之间，面对突起。

5. 发明授权

US08237183B2 Semiconductor light emitting device and method for manufacturing same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US08237183B2
公开(公告)日：2012-08-07
申请号：US12191659
申请日：2008-08-14
申请人： Hidefumi Yasuda , Yuko Kato , Yasuharu Sugawara , Toshiyuki Terada , Kazuyoshi Furukawa
发明人： Hidefumi Yasuda , Yuko Kato , Yasuharu Sugawara , Toshiyuki Terada , Kazuyoshi Furukawa
IPC分类号： H01L33/00
CPC分类号： H01L33/60 , H01L33/0079 , H01L33/387 , H01L33/405 , H01L33/46
摘要： A semiconductor light emitting device includes: a support substrate; a metal layer provided on the support substrate; a semiconductor layer provided on the metal layer and including a light emitting layer; a contact layer containing a semiconductor, selectively provided between the semiconductor layer and the metal layer, and being in contact with the semiconductor layer and the metal layer; and an insulating film provided between the semiconductor layer and the metal layer at a position not overlapping the contact layer.
摘要翻译：一种半导体发光器件包括：支撑衬底; 设置在所述支撑基板上的金属层; 设置在所述金属层上并包括发光层的半导体层; 包含半导体的接触层，选择性地设置在所述半导体层和所述金属层之间，并与所述半导体层和所述金属层接触; 以及在不与接触层重叠的位置处在半导体层和金属层之间设置的绝缘膜。

6. 发明授权

US07453099B2 Semiconductor light emitting device 失效
标题翻译：半导体发光器件
公开(公告)号：US07453099B2
公开(公告)日：2008-11-18
申请号：US11538646
申请日：2006-10-04
申请人： Yuko Kato , Hidefumi Yasuda , Kazuyoshi Furukawa
发明人： Yuko Kato , Hidefumi Yasuda , Kazuyoshi Furukawa
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/0079 , H01L33/08 , H01L33/38 , H01L33/405 , H01L33/42
摘要： A semiconductor light emitting device has a transparent layer having a first main surface and a second main surface at a side opposite to the first main surface, a plurality of light emitting sections arranged in at least one line on the first main surface of the transparent layer, each of the plurality of light emitting sections having an active layer and a tapered section, the tapered section reflecting light emitted from the active layer to the direction of the transparent layer, each of the plurality of light emitting sections having a central portion and a peripheral portion and having light intensity distribution on a second main surface of the transparent layer, on the second main surface of the transparent layer, light intensity at a region opposite to the peripheral portion being equal to or more than light intensity at a region opposite to the central portion, and a plurality of contact sections arranged opposite to the central portion on the second main surface of the transparent layer, each of the plurality of contact sections being opaque with respect to emission wavelengths of the plurality of light emitting sections.
摘要翻译：半导体发光器件具有在与第一主表面相对的一侧具有第一主表面和第二主表面的透明层，多个发光部分布置在透明层的第一主表面上的至少一条线上所述多个发光部中的每一个具有有源层和锥形部，所述锥形部将从所述有源层发射的光反射到所述透明层的方向，所述多个发光部中的每一个具有中心部和并且在透明层的第二主表面上具有光强度分布，在透明层的第二主表面上，与周边部分相反的区域处的光强度等于或大于与透明层相反的区域处的光强度中央部分和与透明物的第二主表面上的中心部分相对设置的多个接触部分多个接触部分中的每一个相对于多个发光部分的发射波长是不透明的。

7. 发明授权

US07148521B2 Semiconductor light emitting device and method of manufacturing the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US07148521B2
公开(公告)日：2006-12-12
申请号：US11047666
申请日：2005-02-02
申请人： Hidefumi Yasuda , Yuko Kato , Kazuyoshi Furukawa
发明人： Hidefumi Yasuda , Yuko Kato , Kazuyoshi Furukawa
IPC分类号： H01L29/22
CPC分类号： H01L33/20 , H01L33/08 , H01L33/46
摘要： A semiconductor light emitting device comprises: a substrate having first and second major surfaces; a light emitting layer provided in a first portion on the first major surface of the substrate; a first electrode provided above the light emitting layer; a second electrode provided in a second portion on the first major surface of the substrate, the second portion being different from the first portion; and a protrusion provided on the second major surface of the substrate, the protrusion having a planar shape that reflects a planar shape of a light emitting area of the light emitting layer, the light emitting area being sandwiched between the first electrode and the second electrode and facing the protrusion.
摘要翻译：一种半导体发光器件包括：具有第一和第二主表面的衬底; 设置在所述基板的所述第一主表面上的第一部分中的发光层; 设置在所述发光层上方的第一电极; 设置在所述基板的所述第一主表面上的第二部分中的第二电极，所述第二部分不同于所述第一部分; 以及设置在所述基板的所述第二主表面上的突起，所述突起具有反映所述发光层的发光区域的平面形状的平面形状，所述发光区域夹在所述第一电极和所述第二电极之间，面对突起。

8. 发明申请

US20120070958A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20120070958A1
公开(公告)日：2012-03-22
申请号：US13238715
申请日：2011-09-21
申请人： Kazuyoshi Furukawa , Yoshinori Natsume , Yasuhiko Akaike , Shinji Nunotani , Wakana Nishiwaki , Masaaki Ogawa , Toru Kita , Hidefumi Yasuda
发明人： Kazuyoshi Furukawa , Yoshinori Natsume , Yasuhiko Akaike , Shinji Nunotani , Wakana Nishiwaki , Masaaki Ogawa , Toru Kita , Hidefumi Yasuda
IPC分类号： H01L21/762
CPC分类号： H01L21/185 , H01L21/76251 , H01L33/0079
摘要： In a method of manufacturing a semiconductor device of an embodiment, at room temperature, a first substrate including a semiconductor laminate body is adhered to a second substrate with a smaller thermal expansion coefficient than that of the first substrate. Then, the first substrate and the second substrate are heated with the first substrate heated at a temperature higher than that of the second substrate. Thus the first substrate and the second substrate are bonded together. The first substrate is either a sapphire substrate including a nitride-based semiconductor layer, or a GaAs substrate including a phosphorus-based semiconductor layer. The second substrate is a silicon substrate, a GaAs substrate, a Ge substrate, or a metal substrate.
摘要翻译：在本实施方式的半导体装置的制造方法中，在室温下，具有比第一基板的热膨胀系数小的第一基板与第二基板粘合。然后，第一基板和第二基板被加热，第一基板在比第二基板的温度高的温度下加热。因此，第一基板和第二基板结合在一起。第一衬底是包括氮化物基半导体层的蓝宝石衬底或包括磷基半导体层的GaAs衬底。第二基板是硅衬底，GaAs衬底，Ge衬底或金属衬底。

9. 发明授权

US08546178B2 Semiconductor light emitting device and method for manufacturing semiconductor light emitting device 有权
标题翻译：半导体发光器件及半导体发光器件的制造方法
公开(公告)号：US08546178B2
公开(公告)日：2013-10-01
申请号：US13180889
申请日：2011-07-12
申请人： Tomoko Morioka , Takayoshi Fujii , Toshitake Kitagawa , Kazufumi Shiozawa , Taisuke Sato , Hidefumi Yasuda , Yuko Kato
发明人： Tomoko Morioka , Takayoshi Fujii , Toshitake Kitagawa , Kazufumi Shiozawa , Taisuke Sato , Hidefumi Yasuda , Yuko Kato
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/38
摘要： According to one embodiment, a semiconductor light emitting device includes a substrate, a first semiconductor layer, a light emitting layer, a second semiconductor layer, and a translucent electrode. The substrate includes a first region provided along periphery of a first major surface and a second region provided on center side of the first major surface as viewed from the first region. The first semiconductor layer is provided on the first major surface of the substrate. The light emitting layer is provided on the first semiconductor layer. The second semiconductor layer is provided on the light emitting layer. The translucent electrode is provided on the second semiconductor layer. A reflectance in the second region is higher than a reflectance in the first region.
摘要翻译：根据一个实施例，半导体发光器件包括衬底，第一半导体层，发光层，第二半导体层和透光性电极。基板包括沿着第一主表面的周边设置的第一区域和设置在从第一区域观察的第一主表面的中心侧的第二区域。第一半导体层设置在基板的第一主表面上。发光层设置在第一半导体层上。第二半导体层设置在发光层上。半透明电极设置在第二半导体层上。第二区域的反射率高于第一区域的反射率。

10. 发明授权

US08890201B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08890201B2
公开(公告)日：2014-11-18
申请号：US12880050
申请日：2010-09-10
申请人： Yuko Kato , Hidefumi Yasuda
发明人： Yuko Kato , Hidefumi Yasuda
IPC分类号： H01L33/00 , H01L33/20 , H01L33/38
CPC分类号： H01L33/40 , H01L33/0079 , H01L33/14 , H01L33/20 , H01L33/24 , H01L33/38 , H01L2224/48091 , H01L2224/48247 , H01L2224/48472 , H01L2924/3025 , H01L2933/0016 , H01L2924/00014 , H01L2924/00
摘要： According to one embodiment, in a semiconductor light emitting device, a first electrode is provided on a first surface of the semiconductor laminated body including a light emitting layer. A joint metal layer is provided on a second surface of the semiconductor laminated body opposed to the first surface of the semiconductor laminated body. A bonding metal layer covers a first surface of the joint metal layer on a side opposite to the semiconductor laminated body and is provided on a side of the second surface of the semiconductor laminated body. A substrate provided with a second electrode is bonded to the bonding metal layer. A layer having an etching resistance property to an etchant for etching the semiconductor laminated body is formed on a side of the surface of the bonding metal layer facing to the semiconductor laminated body.
摘要翻译：根据一个实施例，在半导体发光器件中，第一电极设置在包括发光层的半导体层叠体的第一表面上。在半导体层叠体的与半导体层叠体的第一面相对的第二面上设置接合金属层。接合金属层覆盖与半导体层叠体相反的一侧的接合金属层的第一面，并且设置在半导体层叠体的第二面的一侧。具有第二电极的基板被接合到接合金属层。在与半导体层叠体相对的接合金属层的表面的一侧形成有对蚀刻半导体层叠体的蚀刻剂具有耐蚀刻性的层。

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