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1. 发明授权

US5538905A Method for forming a transparent conductive ITO film 失效
标题翻译：透明导电ITO膜的形成方法
公开(公告)号：US5538905A
公开(公告)日：1996-07-23
申请号：US139915
申请日：1993-10-20
申请人： Yukiya Nishioka , Yukinobu Nakata , Hidenori Negoto , Yoshinori Shimada , Takehisa Sakurai , Mikio Katayama
发明人： Yukiya Nishioka , Yukinobu Nakata , Hidenori Negoto , Yoshinori Shimada , Takehisa Sakurai , Mikio Katayama
IPC分类号： C01B13/14 , C23C14/04 , C23C14/08 , C23C14/34 , C23C14/58 , G02F1/1343 , H01B5/14 , H01B13/00 , H01L31/18 , H01L21/265
CPC分类号： H01L31/1884 , C23C14/086 , C23C14/5833 , C23C14/5853 , G02F1/13439 , Y02E10/50
摘要： A method for forming a transparent conductive film includes the steps of: forming an ITO film on a substrate by sputtering a target including oxygen atoms, indium atoms, and tin atoms under an inert gas atmosphere; patterning the ITO film by selectively removing a prescribed portion of the ITO film using an etching method; and doping the patterned ITO film with oxygen using an ion shower doping method, thereby forming the transparent conductive film from the ITO film.
摘要翻译：形成透明导电膜的方法包括以下步骤：在惰性气体气氛下通过溅射包含氧原子，铟原子和锡原子的靶在衬底上形成ITO膜; 通过使用蚀刻方法选择性地去除ITO膜的规定部分来图案化ITO膜; 并使用离子喷淋掺杂方法用氧掺杂图案化的ITO膜，由ITO膜形成透明导电膜。

2. 发明授权

US5953084A Transmission type liquid crystal display device having capacitance ratio of 10% or less and charging rate difference of 0.6% or less 失效
标题翻译：电容比为10％以下，充电率差为0.6％以下的透射型液晶显示装置
公开(公告)号：US5953084A
公开(公告)日：1999-09-14
申请号：US110151
申请日：1998-07-06
申请人： Takayuki Shimada , Masaru Kajitani , Masaya Okamoto , Naofumi Kondo , Mikio Katayama , Yoshikazu Sakuhana , Akihiro Yamamoto , Yukinobu Nakata , Hirohiko Nishiki , Yoshinori Shimada
发明人： Takayuki Shimada , Masaru Kajitani , Masaya Okamoto , Naofumi Kondo , Mikio Katayama , Yoshikazu Sakuhana , Akihiro Yamamoto , Yukinobu Nakata , Hirohiko Nishiki , Yoshinori Shimada
IPC分类号： G02F1/1333 , G02F1/136 , G02F1/1362 , G02F1/1368 , G09F9/30 , H01L29/786 , G02F1/1343
CPC分类号： G02F1/136227 , G02F1/136213 , G02F1/133345 , G02F1/136209 , G02F2001/13606 , G02F2201/40
摘要： The transmission type liquid crystal display device of this invention includes: gate lines; source lines; and switching elements each arranged near a crossing of each gate line and each source line, a gate electrode of each switching element being connected to the gate line, a source electrode of the switching element being connected to the source line, and a drain electrode of the switching element being connected to a pixel electrode for applying a voltage to a liquid crystal layer, wherein an interlayer insulating film formed of an organic film with high transparency is provided above the switching element, the gate line, and the source line, and wherein the pixel electrode formed of a transparent conductive film is provided on the interlayer insulating film.
摘要翻译：本发明的透射型液晶显示装置包括：栅极线; 源线; 以及开关元件，其各自布置在每个栅极线和每个源极线的交叉点附近，每个开关元件的栅电极连接到栅极线，开关元件的源极连接到源极线，以及漏极所述开关元件连接到用于向液晶层施加电压的像素电极，其中在所述开关元件，所述栅极线和所述源极线之上设置由透明度高的有机膜形成的层间绝缘膜，并且其中由透明导电膜形成的像素电极设置在层间绝缘膜上。

3. 发明授权

US6097452A Transmission type liquid crystal display having an organic interlayer elements film between pixel electrodes and switching 失效
标题翻译：在像素电极之间具有有机层间元素膜和切换的透射型液晶显示器
公开(公告)号：US6097452A
公开(公告)日：2000-08-01
申请号：US110134
申请日：1998-07-06
申请人： Takayuki Shimada , Masaru Kajitani , Masaya Okamoto , Naofumi Kondo , Mikio Katayama , Yoshikazu Sakuhana , Akihiro Yamamoto , Yukinobu Nakata , Hirohiko Nishiki , Yoshinori Shimada
发明人： Takayuki Shimada , Masaru Kajitani , Masaya Okamoto , Naofumi Kondo , Mikio Katayama , Yoshikazu Sakuhana , Akihiro Yamamoto , Yukinobu Nakata , Hirohiko Nishiki , Yoshinori Shimada
IPC分类号： G02F1/1333 , G02F1/136 , G02F1/1362 , G02F1/1368 , G09F9/30 , H01L29/786 , G02F1/1343
CPC分类号： G02F1/136227 , G02F1/136213 , G02F1/133345 , G02F1/136209 , G02F2001/13606 , G02F2201/40
摘要： The transmission type liquid crystal display device of this invention includes: gate lines; source lines; and switching elements each arranged near a crossing of each gate line and each source line, a gate electrode of each switching element being connected to the gate line, a source electrode of the switching element being connected to the source line, and a drain electrode of the switching element being connected to a pixel electrode for applying a voltage to a liquid crystal layer, wherein an interlayer insulating film formed of an organic film with high transparency is provided above the switching element, the gate line, and the source line, and wherein the pixel electrode formed of a transparent conductive film is provided on the interlayer insulating film.
摘要翻译：本发明的透射型液晶显示装置包括：栅极线; 源线; 以及开关元件，其各自布置在每个栅极线和每个源极线的交叉点附近，每个开关元件的栅电极连接到栅极线，开关元件的源极连接到源极线，以及漏极所述开关元件连接到用于向液晶层施加电压的像素电极，其中在所述开关元件，所述栅极线和所述源极线之上设置由透明度高的有机膜形成的层间绝缘膜，并且其中由透明导电膜形成的像素电极设置在层间绝缘膜上。

4. 发明授权

US6052162A Transmission type liquid crystal display device with connecting electrode and pixel electrode connected via contact hole through interlayer insulating film and method for fabricating 失效
标题翻译：具有连接电极和像素电极的透射型液晶显示装置通过层间绝缘膜通过接触孔连接及其制造方法
公开(公告)号：US6052162A
公开(公告)日：2000-04-18
申请号：US695632
申请日：1996-08-12
申请人： Takayuki Shimada , Masaru Kajitani , Masaya Okamoto , Naofumi Kondo , Mikio Katayama , Yoshikazu Sakuhana , Akihiro Yamamoto , Yukinobu Nakata , Hirohiko Nishiki , Yoshinori Shimada
发明人： Takayuki Shimada , Masaru Kajitani , Masaya Okamoto , Naofumi Kondo , Mikio Katayama , Yoshikazu Sakuhana , Akihiro Yamamoto , Yukinobu Nakata , Hirohiko Nishiki , Yoshinori Shimada
IPC分类号： G02F1/1333 , G02F1/136 , G02F1/1362 , G02F1/1368 , G09F9/30 , H01L29/786 , G02F1/343
CPC分类号： G02F1/136227 , G02F1/136213 , G02F1/133345 , G02F1/136209 , G02F2001/13606 , G02F2201/40
摘要： The transmission type liquid crystal display device of this invention includes: gate lines; source lines; and switching elements each arranged near a crossing of each gate line and each source line, a gate electrode of each switching element being connected to the gate line, a source electrode of the switching element being connected to the source line, and a drain electrode of the switching element being connected to a pixel electrode for applying a voltage to a liquid crystal layer, wherein an interlayer insulating film formed of an organic film with high transparency is provided above the switching element, the gate line, and the source line, and wherein the pixel electrode formed of a transparent conductive film is provided on the interlayer insulating film.
摘要翻译：本发明的透射型液晶显示装置包括：栅极线; 源线; 以及开关元件，其各自布置在每个栅极线和每个源极线的交叉点附近，每个开关元件的栅电极连接到栅极线，开关元件的源极连接到源极线，以及漏极所述开关元件连接到用于向液晶层施加电压的像素电极，其中在所述开关元件，所述栅极线和所述源极线之上设置由透明度高的有机膜形成的层间绝缘膜，并且其中由透明导电膜形成的像素电极设置在层间绝缘膜上。

5. 发明授权

US5471070A Thin-film transistor circuit having an amorphous silicon load and a driver transistor and a method of producing the same 失效
标题翻译：具有非晶硅负载的薄膜晶体管电路和驱动晶体管及其制造方法
公开(公告)号：US5471070A
公开(公告)日：1995-11-28
申请号：US387361
申请日：1995-02-13
申请人： Yoshinori Shimada , Naofumi Kondo , Takehisa Sakurai , Yoshiharu Kataoka , Manabu Takahama , Mikio Katayama
发明人： Yoshinori Shimada , Naofumi Kondo , Takehisa Sakurai , Yoshiharu Kataoka , Manabu Takahama , Mikio Katayama
IPC分类号： G02F1/136 , G02F1/1368 , H01L27/12 , H01L29/78 , H01L29/786 , H01L27/02
CPC分类号： H01L27/12
摘要： A thin-film transistor circuit for a logic gate circuit includes: an amorphous silicon layer; a driver transistor having a source region, a drain region, and a channel region, the source, drain, and channel regions being formed in the amorphous silicon layer; and a load device formed in the amorphous silicon layer and made of n.sup.- amorphous silicon, the load device being connected to the driver transistor.
摘要翻译：一种用于逻辑门电路的薄膜晶体管电路包括：非晶硅层; 具有源极区，漏极区和沟道区的驱动晶体管，源极，漏极和沟道区形成在非晶硅层中; 以及形成在非晶硅层中并由正非晶硅制成的负载装置，负载装置连接到驱动晶体管。

6. 发明授权

US06448578B1 Thin-film transistor and liquid crystal display device 有权
标题翻译：薄膜晶体管和液晶显示装置
公开(公告)号：US06448578B1
公开(公告)日：2002-09-10
申请号：US09369913
申请日：1999-08-06
申请人： Yoshinori Shimada , Masao Kawaguchi , Hiroshi Ishibashi , Yukinobu Nakata , Keiichi Akamatsu
发明人： Yoshinori Shimada , Masao Kawaguchi , Hiroshi Ishibashi , Yukinobu Nakata , Keiichi Akamatsu
IPC分类号： H01L2904
CPC分类号： G02F1/136286 , G02F2001/13629 , G02F2001/136295 , H01L29/458 , H01L29/4908
摘要： In a thin-film transistor to be used in an active matrix liquid crystal display device, each of a gate signal line, a source signal line, and a drain extraction electrode has a three-layer structure. Specifically, each of these members is made up of a lower layer made of a titanium film, an intermediate layer made of an aluminum film, and an upper layer made of a titanium film containing nitrogen. Since the respective upper layers, in contact with a gate insulating film or an interlayer insulating film made of a silicon nitride film, are made of titanium films containing nitrogen, they have superior adhesion to the silicon nitride film. Consequently, film peeling, etc. during the manufacturing process can be suppressed. Further, providing the titanium film beneath the aluminum film contributes to reduction of the resistance of the aluminum film.
摘要翻译：在用于有源矩阵液晶显示装置的薄膜晶体管中，栅极信号线，源极信号线和漏极引出电极都具有三层结构。具体地，这些构件中的每一个由由钛膜制成的下层，由铝膜制成的中间层和由含氮的钛膜制成的上层构成。由于与栅极绝缘膜或由氮化硅膜形成的层间绝缘膜接触的各个上层由含有氮的钛膜制成，因此它们对氮化硅膜具有优异的粘附性。因此，可以抑制制造过程中的膜剥离等。此外，在铝膜下方提供钛膜有助于降低铝膜的电阻。

7. 发明授权

US6084653A Liquid crystal display having an active matrix substrate with thermosetting inter-layer insulating film with a thickness of greater than 2 .mu.M 有权
标题翻译：具有厚度大于2μm的具有热固性层间绝缘膜的有源矩阵基板的液晶显示器
公开(公告)号：US6084653A
公开(公告)日：2000-07-04
申请号：US248282
申请日：1999-02-11
申请人： Yoshinori Shimada , Yukinobu Nakata , Akihiro Yamamoto
发明人： Yoshinori Shimada , Yukinobu Nakata , Akihiro Yamamoto
IPC分类号： G02F1/1333 , G02F1/13 , G02F1/1343 , G02F1/136 , G02F1/1362 , G02F1/1368 , H01L29/786
CPC分类号： G02F1/136227
摘要： In the fabrication of an active matrix substrate, when forming a contact hole in an inter-layer insulating film made of a thermosetting resin and hardening the inter-layer insulating film by heat, the temperature gradient in raising the temperature from room temperature to a baking temperature is arranged to be larger than 10.degree. C./minute. As a result, the tilt angle of the slant face of the contact hole is controlled to be within a range of 45.degree. to 60.degree..
摘要翻译：在有源矩阵基板的制造中，当在由热固性树脂制成的层间绝缘膜中形成接触孔并通过加热使层间绝缘膜硬化时，将温度从室温升高到烘烤的温度梯度温度大于10℃/分钟。结果，接触孔的倾斜面的倾斜角被控制在45°至60°的范围内。

8. 发明授权

US06744070B2 Thin film transistor and liquid crystal display device 有权
标题翻译：薄膜晶体管和液晶显示装置
公开(公告)号：US06744070B2
公开(公告)日：2004-06-01
申请号：US10198275
申请日：2002-07-17
申请人： Yoshinori Shimada , Masao Kawaguchi , Hiroshi Ishibashi , Yukinobu Nakata , Keiichi Akamatsu
发明人： Yoshinori Shimada , Masao Kawaguchi , Hiroshi Ishibashi , Yukinobu Nakata , Keiichi Akamatsu
IPC分类号： H01L2976
CPC分类号： G02F1/136286 , G02F2001/13629 , G02F2001/136295 , H01L29/458 , H01L29/4908
摘要： In a thin-film transistor to be used in an active matrix liquid crystal display device, each of a gate signal line, a source signal line, and a drain extraction electrode has a three-layer structure. Specifically, each of these members is made up of a lower layer made of a titanium film, an intermediate layer made of an aluminum film, and an upper layer made of a titanium film containing nitrogen. Since the respective upper layers, in contact with a gate insulating film or an interlayer insulating film made of a silicon nitride film, are made of titanium films containing nitrogen, they have superior adhesion to the silicon nitride film. Consequently, film peeling, etc. during the manufacturing process can be suppressed. Further, providing the titanium film beneath the aluminum film contributes to reduction of the resistance of the aluminum film.
摘要翻译：在用于有源矩阵液晶显示装置的薄膜晶体管中，栅极信号线，源极信号线和漏极引出电极都具有三层结构。具体地，这些构件中的每一个由由钛膜制成的下层，由铝膜制成的中间层和由含氮的钛膜制成的上层构成。由于与栅极绝缘膜或由氮化硅膜形成的层间绝缘膜接触的各个上层由含有氮的钛膜制成，因此它们对氮化硅膜具有优异的粘附性。因此，可以抑制制造过程中的膜剥离等。此外，在铝膜下方提供钛膜有助于降低铝膜的电阻。

9. 发明授权

US5989782A Method for producing liquid crystal display device 失效
标题翻译：液晶显示装置的制造方法
公开(公告)号：US5989782A
公开(公告)日：1999-11-23
申请号：US823726
申请日：1997-03-25
申请人： Hirohiko Nishiki , Yukinobu Nakata , Yoshinori Shimada
发明人： Hirohiko Nishiki , Yukinobu Nakata , Yoshinori Shimada
IPC分类号： G02F1/1333 , G02F1/1343 , G02F1/1362 , G09F9/30 , G02F1/133
CPC分类号： G02F1/13439 , G02F1/136227
摘要： A method for producing a liquid crystal display device includes: a pair of insulating substrates; a liquid crystal layer interposed between the pair of insulating substrates; switching elements arranged in a matrix on one of the pair of the insulating substrates; gate lines and data lines, arranged to intersect each other, for controlling the switching elements; and pixel electrodes provided above the gate lines and the data lines with an organic insulating film therebetween. The method includes the steps of forming a transparent conductive film on the organic insulating film at a first temperature; annealing the transparent conductive film at a second temperature equal to or lower than the first temperature; and patterning the transparent conductive film to form the pixel electrodes after the step of annealing.
摘要翻译：液晶显示装置的制造方法包括：一对绝缘基板; 插入在所述一对绝缘基板之间的液晶层; 在所述一对绝缘基板中的一个上布置成矩阵的开关元件; 栅极线和数据线，被布置为彼此相交，用于控制开关元件; 以及设置在栅极线之上的像素电极和数据线之间的有机绝缘膜。该方法包括在第一温度下在有机绝缘膜上形成透明导电膜的步骤; 在等于或低于第一温度的第二温度对透明导电膜退火; 以及在退火步骤之后图案化透明导电膜以形成像素电极。

10. 发明授权

US5907376A Liquid crystal display having an active matrix substrate with thermosetting inter-layer insulating film with a thickness of greater than 2 .mu.m 失效
标题翻译：具有厚度大于2μm的具有热固性层间绝缘膜的有源矩阵基板的液晶显示器
公开(公告)号：US5907376A
公开(公告)日：1999-05-25
申请号：US821758
申请日：1997-03-20
申请人： Yoshinori Shimada , Yukinobu Nakata , Akihiro Yamamoto
发明人： Yoshinori Shimada , Yukinobu Nakata , Akihiro Yamamoto
IPC分类号： G02F1/1333 , G02F1/13 , G02F1/1343 , G02F1/136 , G02F1/1362 , G02F1/1368 , H01L29/786
CPC分类号： G02F1/136227
摘要： In the fabrication of an active matrix substrate, when forming a contact hole in an inter-layer insulating film made of a thermosetting resin and hardening the inter-layer insulating film by heat, the temperature gradient in raising the temperature from room temperature to a baking temperature is arranged to be larger than 10.degree. C./minute. As a result, the tilt angle of the slant face of the contact hole is controlled to be within a range of 45.degree. to 60.degree..
摘要翻译：在有源矩阵基板的制造中，当在由热固性树脂制成的层间绝缘膜中形成接触孔并通过加热使层间绝缘膜硬化时，将温度从室温升高到烘烤的温度梯度温度大于10℃/分钟。结果，接触孔的倾斜面的倾斜角被控制在45°至60°的范围内。

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