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1. 发明申请

US20090280339A1 POLYIMIDE FILM, POLYIMIDE METAL LAMINATE USING SAME, AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译：聚酰亚胺膜，使用其的聚酰亚胺金属层压体及其制造方法
公开(公告)号：US20090280339A1
公开(公告)日：2009-11-12
申请号：US11885455
申请日：2006-04-05
申请人： Takeshi Tsuda , Eiji Ohtsubo , Masao Kawaguchi , Shuji Tahara , Kenji Iida
发明人： Takeshi Tsuda , Eiji Ohtsubo , Masao Kawaguchi , Shuji Tahara , Kenji Iida
IPC分类号： B32B15/08 , B32B27/00 , B32B37/14
CPC分类号： H05K3/381 , B32B7/12 , B32B15/08 , B32B15/18 , B32B15/20 , B32B27/16 , B32B27/281 , B32B2255/10 , B32B2255/26 , B32B2307/302 , B32B2457/08 , C08J7/12 , C08J2379/08 , H05K1/0346 , H05K1/036 , H05K2201/0129 , H05K2201/0154 , H05K2203/0793 , H05K2203/122 , Y10T428/31681 , Y10T428/31721
摘要： Disclosed is a polyimide metal laminate having a metal layer with high adhesiveness. This polyimide metal laminate is suitable as a material for high-density circuit boards. Specifically disclosed is a polyimide film characterized by being surface-treated with an aqueous solution containing an alcohol amine and an alkali metal hydroxide. Also specifically disclosed is a polyimide metal laminate obtained by providing the surface of such a polyimide film with a thermoplastic polyimide and then forming a metal layer on the outer side of the thermoplastic polyimide layer. Further specifically disclosed is a method for manufacturing such a polyimide metal laminate.
摘要翻译：公开了具有高粘合性的金属层的聚酰亚胺金属层压体。该聚酰亚胺金属层压板适用于高密度电路板的材料。具体公开了一种聚酰亚胺膜，其特征在于用含有醇胺和碱金属氢氧化物的水溶液进行表面处理。还具体公开了通过将这种聚酰亚胺膜的表面提供热塑性聚酰亚胺，然后在热塑性聚酰亚胺层的外侧形成金属层而获得的聚酰亚胺金属层压体。进一步具体公开的是这种聚酰亚胺金属层压体的制造方法。

2. 发明申请

US20080299402A1 Polyimide film, polyimide metal laminate and process for producing the same 审中-公开
标题翻译：聚酰亚胺膜，聚酰亚胺金属层压板及其制造方法
公开(公告)号：US20080299402A1
公开(公告)日：2008-12-04
申请号：US11987650
申请日：2007-12-03
申请人： Masao Kawaguchi , Eiji Ohtsubo , Takeshi Tsuda , Shuji Tahara , Kenji Iida
发明人： Masao Kawaguchi , Eiji Ohtsubo , Takeshi Tsuda , Shuji Tahara , Kenji Iida
IPC分类号： B32B27/06 , B32B37/14
CPC分类号： B32B15/08 , B32B27/34 , C08J5/124 , C08J7/12 , C08J2379/08 , C08J2479/08 , C09J5/02 , C09J2400/163 , C09J2479/086 , C09J2479/088 , H05K1/0346 , H05K3/381 , H05K3/386 , H05K2201/0154 , H05K2203/0796 , Y10T428/31721
摘要： The present invention relates to a polyimide-metal laminate that ensures a high adhesion of a metal layer and suitable for use as a material of a high density circuit board. In particular, it provides a polyimide film characterized by having undergone a surface treatment with an alkaline aqueous solution containing a permanganate. The alkaline aqueous solution preferably contains a hydroxide. It also provides a polyimide-metal laminate characterized in that on a surface of the polyimide film a thermoplastic polyimide layer and a metal layer are formed, and a method of producing the polyimide-metal laminate.
摘要翻译：本发明涉及一种确保金属层的高附着性且适合用作高密度电路板的材料的聚酰亚胺 - 金属层压体。特别地，它提供了一种聚酰亚胺膜，其特征在于用含有高锰酸盐的碱性水溶液进行了表面处理。碱性水溶液优选含有氢氧化物。还提供了一种聚酰亚胺 - 金属层压体，其特征在于，在聚酰亚胺膜的表面上形成热塑性聚酰亚胺层和金属层，以及制造聚酰亚胺 - 金属层压体的方法。

3. 发明授权

US06913685B2 Method of modifying the surface of plastic substrate 失效
标题翻译：改性塑料基材表面的方法
公开(公告)号：US06913685B2
公开(公告)日：2005-07-05
申请号：US10172909
申请日：2002-06-18
申请人： Masao Kawaguchi , Tadao Tokushima , Yoshio Hirayama
发明人： Masao Kawaguchi , Tadao Tokushima , Yoshio Hirayama
IPC分类号： C02F1/461 , C02F1/467 , C08J7/00 , C08J7/12 , G11B5/84 , G11B7/24 , G11B7/26 , B05D5/00
CPC分类号： C08J7/045 , C02F1/467 , C02F2001/46195 , C02F2209/04 , C02F2305/023 , C08J7/12
摘要： A plastic substrate is processed by a functional water obtained by electrolysis of water or functional water containing active oxygen or active hydrogen for a predetermined time period to selectively remove an alkali and/or halogen component in a surface layer of the plastic substrate to stabilize or remove oligomer in a resin matrix, whereby deterioration of resin and deterioration of properties of a recording medium caused by a remaining unreacted catalyst used for processing the plastic substrate surface or the like can be prevented and the adhesion strength and the durability of a recoding coating to be formed on the substrate are improved.
摘要翻译：塑料基板由通过电解水或含有活性氧或活性氢的官能水预定时间段而获得的官能水进行处理，以选择性地除去塑料基材的表面层中的碱和/或卤素组分以稳定或除去可以防止树脂基体中的低聚物，由此可以防止树脂的劣化和由用于处理塑料基材表面等的剩余的未反应催化剂引起的记录介质的性能劣化，并且可以将记录涂层的粘合强度和耐久性在基板上形成的改善。

4. 发明授权

US6048466A Method of cleaning glass substrate for magnetic disk or semiconductor substrate 失效
标题翻译：清洁磁盘或半导体衬底的玻璃衬底的方法
公开(公告)号：US6048466A
公开(公告)日：2000-04-11
申请号：US44228
申请日：1998-03-19
申请人： Toshinori Morizane , Masao Kawaguchi , Tadao Tokushima
发明人： Toshinori Morizane , Masao Kawaguchi , Tadao Tokushima
IPC分类号： G11B5/84 , B08B6/00 , B01D17/06 , B44C1/22 , C25B9/00 , C25F1/00
CPC分类号： G11B5/8404
摘要： To propose a method of cleaning a surface of a glass substrate fabricated by a process of strengthening a surface thereof by alkaline ion exchange reaction by selectively removing alkaline metal on the surface by cleaning the surface by using an activated ionic water produced by electric polarization and as a result, to provide a glass substrate for a magnetic disk having a magnetic medium with insignificant corrosion and excellent S/N ratio, in cleaning a glass substrate for a magnetic disk using a glass substrate pulled up from a chemically strengthening treatment solution produced by an alkaline ion exchange reaction, after a final polishing step of fabricating the glass substrate for a magnetic disk, the glass substrate is cleaned by an activated anodically electrolyzed water produced by electric polarization to thereby selectively remove the alkaline metal at the vicinity of the surface.
摘要翻译：提出一种通过碱性离子交换反应来强化其表面的方法来清洗玻璃基板的表面的方法，通过使用由电极化产生的活化离子水清洗表面，并且通过选择性地除去表面上的碱金属结果是，提供一种具有磁性介质的玻璃基板，该磁盘具有不可忽视的腐蚀和优异的S / N比，在使用从由化学强化处理液生产的化学强化处理溶液提拉的玻璃基板上清洁用于磁盘的玻璃基板碱性离子交换反应，在制造用于磁盘的玻璃基板的最终研磨步骤之后，通过由电极化产生的活性阳极电解水来清洗玻璃基板，从而选择性地除去表面附近的碱金属。

5. 发明申请

US20110051770A1 SEMICONDUCTOR LASER DEVICE 有权
标题翻译：半导体激光器件
公开(公告)号：US20110051770A1
公开(公告)日：2011-03-03
申请号：US12742573
申请日：2009-10-16
申请人： Masao Kawaguchi
发明人： Masao Kawaguchi
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/2201 , H01S5/3203 , H01S5/34333
摘要： A semiconductor laser device includes a semiconductor-layer lamination (20) having an active layer (26) formed over a substrate (11). The semiconductor-layer lamination (20) includes a front face which emits light, a strip-shaped optical waveguide formed in a direction transverse to the front face, a first region (20A) extending in a direction transverse to the front face, a second region (20B) having a top surface whose height is different from that of the first region (20A), and a planar region (20C) formed between the first region (20A) and the second region (20B), and having periodic surface undulations whose variation is smaller than that of the second region (20B). The optical waveguide is formed in the planar region (20C).
摘要翻译：半导体激光器件包括半导体层层压（20），其具有在衬底（11）上形成的有源层（26）。半导体层叠层（20）包括发射光的正面，与前表面垂直的方向形成的条形光波导，沿与前表面相垂直的方向延伸的第一区域（20A），第二区域具有高度不同于第一区域（20A）的顶表面的区域（20B）和形成在第一区域（20A）和第二区域（20B）之间的平面区域（20C），并且具有周期性表面起伏其变化小于第二区域（20B）的变化。光波导形成在平面区域（20C）中。

6. 发明授权

US06744070B2 Thin film transistor and liquid crystal display device 有权
标题翻译：薄膜晶体管和液晶显示装置
公开(公告)号：US06744070B2
公开(公告)日：2004-06-01
申请号：US10198275
申请日：2002-07-17
申请人： Yoshinori Shimada , Masao Kawaguchi , Hiroshi Ishibashi , Yukinobu Nakata , Keiichi Akamatsu
发明人： Yoshinori Shimada , Masao Kawaguchi , Hiroshi Ishibashi , Yukinobu Nakata , Keiichi Akamatsu
IPC分类号： H01L2976
CPC分类号： G02F1/136286 , G02F2001/13629 , G02F2001/136295 , H01L29/458 , H01L29/4908
摘要： In a thin-film transistor to be used in an active matrix liquid crystal display device, each of a gate signal line, a source signal line, and a drain extraction electrode has a three-layer structure. Specifically, each of these members is made up of a lower layer made of a titanium film, an intermediate layer made of an aluminum film, and an upper layer made of a titanium film containing nitrogen. Since the respective upper layers, in contact with a gate insulating film or an interlayer insulating film made of a silicon nitride film, are made of titanium films containing nitrogen, they have superior adhesion to the silicon nitride film. Consequently, film peeling, etc. during the manufacturing process can be suppressed. Further, providing the titanium film beneath the aluminum film contributes to reduction of the resistance of the aluminum film.
摘要翻译：在用于有源矩阵液晶显示装置的薄膜晶体管中，栅极信号线，源极信号线和漏极引出电极都具有三层结构。具体地，这些构件中的每一个由由钛膜制成的下层，由铝膜制成的中间层和由含氮的钛膜制成的上层构成。由于与栅极绝缘膜或由氮化硅膜形成的层间绝缘膜接触的各个上层由含有氮的钛膜制成，因此它们对氮化硅膜具有优异的粘附性。因此，可以抑制制造过程中的膜剥离等。此外，在铝膜下方提供钛膜有助于降低铝膜的电阻。

7. 发明授权

US4611562A Method and system for internal combustion engine oxygen sensor heating control which provide sensor heating limited for reliable operation 失效
标题翻译：内燃机氧传感器加热控制方法和系统，提供传感器加热限制可靠运行
公开(公告)号：US4611562A
公开(公告)日：1986-09-16
申请号：US666470
申请日：1984-10-30
申请人： Jiro Nakano , Takao Ishibashi , Takao Akatsuka , Masao Kawaguchi
发明人： Jiro Nakano , Takao Ishibashi , Takao Akatsuka , Masao Kawaguchi
IPC分类号： F02D41/34 , F02D41/00 , F02D41/14 , G01N27/406 , G01N27/409 , F02M7/00 , G01N27/46
CPC分类号： F02D41/1494 , G01N27/4065 , G01N27/4067
摘要： An internal combustion engine has an exhaust system and an oxygen sensor fitted to the exhaust system including a sensor element and an electrically powered heater for heating the sensor element. A method is disclosed for controlling the power supplied to said heater by restricting it to be less than a predetermined value. This restriction may be done by controlling the value of a relatively steady current flowing through said heater, or alternatively may be done by supplying an intermittent voltage to said heater and by controlling the duty factor of said intermittent voltage. The power supplied to said heater may be determined by detecting the current flowing through said heater, or may be determined by detecting the voltage across said heater and the current flowing through said heater. Thereby, during engine heating up operation, the temperature of the heater element is raised as quickly as practicable, without any risk of over quick heating of the heater occurring, which might lead to damage thereto. Accordingly it is ensured that engine performance and the quality of exhaust gas emissions at the time of such engine warming up operation are good. A system is also described for implementing this method.
摘要翻译：内燃机具有排气系统和安装在排气系统上的氧传感器，该排气系统包括用于加热传感器元件的传感器元件和电动加热器。公开了一种通过将其限制为小于预定值来控制供应给所述加热器的功率的方法。该限制可以通过控制流经所述加热器的相对稳定的电流的值来进行，或者可以通过向所述加热器提供间歇电压并且通过控制所述间歇电压的占空系数来完成。提供给所述加热器的功率可以通过检测流过所述加热器的电流来确定，或者可以通过检测所述加热器两端的电压和流过所述加热器的电流来确定。因此，在发动机加热运转时，加热器元件的温度尽可能快地上升，而不会发生加热器的过快加热的风险，这可能导致其损坏。因此，能够确保在发动机升温运转时的发动机性能和排气质量良好。还描述了用于实现该方法的系统。

8. 发明授权

US08000365B2 Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US08000365B2
公开(公告)日：2011-08-16
申请号：US12501778
申请日：2009-07-13
申请人： Norio Ikedo , Masao Kawaguchi , Masaaki Yuri
发明人： Norio Ikedo , Masao Kawaguchi , Masaaki Yuri
IPC分类号： H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0202 , H01S5/0658 , H01S5/2004 , H01S5/2202 , H01S5/2231
摘要： A semiconductor laser device includes a multilayer structure made of group III nitride semiconductors formed on a substrate. The multilayer structure includes a MQW active layer, and also includes a step region selectively formed in an upper portion thereof. In another upper portion of the multilayer structure, a ridge stripe portion including a waveguide, which extends in parallel to a principal surface of the multilayer structure, is formed. In the vicinity of the step region, a first region, in which the MQW active layer has a bandgap energy of Eg1, is formed, and a second region, which is adjacent to the first region and in which the MQW active layer has a bandgap energy of Eg2 (Eg2
摘要翻译：半导体激光器件包括由形成在衬底上的III族氮化物半导体制成的多层结构。多层结构包括MQW有源层，并且还包括在其上部选择性地形成的台阶区域。在多层结构的另一上部形成有与多层结构体的主面平行地延伸的波导状的棱条部。在步进区域附近，形成其中MQW活性层具有Eg1的带隙能的第一区域和与第一区域相邻并且其中MQW活性层具有带隙的第二区域形成Eg2的能量（Eg2

9. 发明申请

US20110180394A1 SPUTTERING METHOD AND SPUTTERING APPARATUS 审中-公开
标题翻译：溅射方法和溅射装置
公开(公告)号：US20110180394A1
公开(公告)日：2011-07-28
申请号：US12673256
申请日：2008-08-18
申请人： Tatsunori Isobe , Takashi Komatsu , Shigemitsu Satou , Hiroki Oozora , Hideo Taniguchi , Masao Kawaguchi
发明人： Tatsunori Isobe , Takashi Komatsu , Shigemitsu Satou , Hiroki Oozora , Hideo Taniguchi , Masao Kawaguchi
IPC分类号： C23C14/34
CPC分类号： C23C14/352 , C03C17/2453 , C03C2217/231 , C03C2217/948 , C03C2218/155 , C03C2218/156
摘要： There is provided a sputtering method in which abnormal discharging due to charge-up of a to-be-processed substrate is restrained and in which a good transparent conductive film can be formed on a to-be-processed large-area substrate. Out of a plurality of targets disposed side by side with, and at a predetermined distance from, one another so as to lie opposite to the to-be-processed substrate inside a sputtering chamber, electric power is applied, by alternately changing polarity at a predetermined frequency, to the targets that form respective pairs. Each target is thus alternately switched to anode electrode and cathode electrode. Glow discharge is thus generated between the anode electrode and the cathode electrode to thereby form plasma atmosphere, whereby each target is sputtered. During sputtering, electric power application to each of the targets is intermittently stopped.
摘要翻译：提供了一种溅射方法，其中抑制了由于待处理衬底的充电而引起的异常放电，并且其中可在待处理的大面积衬底上形成良好的透明导电膜。在与溅射室内的待处理基板相对设置的多个目标中并排设置并且彼此以预定距离设置的多个目标中，通过以下方式交替地改变极性，施加电力：a 预定频率到形成相应对的目标。因此，每个靶交替切换到阳极电极和阴极电极。因此，在阳极电极和阴极电极之间产生辉光放电，从而形成等离子体气氛，由此各溅射靶。在溅射期间，间歇地停止对每个目标的电力施加。

10. 发明申请

US20110051765A1 SEMICONDUCTOR LASER DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US20110051765A1
公开(公告)日：2011-03-03
申请号：US12745385
申请日：2009-10-14
申请人： Katsuya Samonji , Masao Kawaguchi , Hideki Kasugai
发明人： Katsuya Samonji , Masao Kawaguchi , Hideki Kasugai
IPC分类号： H01S5/30 , H01L21/20
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/0202 , H01S5/164 , H01S5/2201 , H01S5/3403 , H01S5/34333
摘要： A semiconductor laser device includes a semiconductor multilayer structure selectively grown on a substrate other than on a predetermined region of the substrate. The semiconductor multilayer structure includes an active layer, and has a stripe-shaped optical waveguide extending in a direction intersecting a front facet through which light is emitted. The active layer has an abnormal growth portion formed at a peripheral edge of the predetermined region, and a larger forbidden band width portion formed around the abnormal growth portion and having a larger width of a forbidden band than that of a portion other than the abnormal growth portion of the active layer. The optical waveguide is spaced apart from the abnormal growth portion and includes the larger forbidden band width portion at the front facet.
摘要翻译：半导体激光器件包括选择性地生长在基板上而不是在基板的预定区域上的半导体多层结构。半导体多层结构包括有源层，并且具有在与发射光的前刻面相交的方向上延伸的条状光波导。活性层在规定区域的周缘形成有异常生长部，在异常生长部周围形成较大的禁带宽度部，与异常生长以外的部分相比，禁带宽度大活性层的一部分。光波导与异常生长部分间隔开，并且在前面具有较大的禁带宽度部分。

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