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1. 发明申请

US20070200138A1 Semiconductor device having IGBT and diode 有权
标题翻译：具有IGBT和二极管的半导体器件
公开(公告)号：US20070200138A1
公开(公告)日：2007-08-30
申请号：US11709272
申请日：2007-02-22
申请人： Yoshihiko Ozeki , Norihito Tokura , Yukio Tsuzuki
发明人： Yoshihiko Ozeki , Norihito Tokura , Yukio Tsuzuki
IPC分类号： H01L29/74
CPC分类号： H01L27/0611 , H01L29/7395 , H01L29/8611
摘要： A semiconductor device includes: a semiconductor substrate; a IGBT region including a first region on a first surface of the substrate and providing a channel-forming region and a second region on a second surface of the substrate and providing a collector; a diode region including a third region on the first surface and providing an anode or a cathode and a fourth region on the second surface and providing the anode or the cathode; a periphery region including a fifth region on the first surface and a sixth region on the second surface. The first, third and fifth regions are commonly and electrically coupled, and the second, fourth and sixth regions are commonly and electrically coupled with one another.
摘要翻译：半导体器件包括：半导体衬底; IGBT区域，包括在所述基板的第一表面上的第一区域，并且在所述基板的第二表面上提供沟道形成区域和第二区域，并提供集电体; 二极管区域，包括在第一表面上的第三区域，并在第二表面上提供阳极或阴极和第四区域，并提供阳极或阴极; 外围区域，包括在第一表面上的第五区域和第二表面上的第六区域。第一，第三和第五区域通常和电耦合，并且第二，第四和第六区域彼此通常电耦合。

2. 发明申请

US20060244053A1 Trench gate type semiconductor device 有权
标题翻译：沟槽型半导体器件
公开(公告)号：US20060244053A1
公开(公告)日：2006-11-02
申请号：US11398551
申请日：2006-04-06
申请人： Yukio Tsuzuki , Norihito Tokura , Yoshihiko Ozeki , Kensaku Yamamoto
发明人： Yukio Tsuzuki , Norihito Tokura , Yoshihiko Ozeki , Kensaku Yamamoto
IPC分类号： H01L29/76
CPC分类号： H01L29/7397 , H01L29/1095 , H01L29/42376 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes: a first semiconductor layer; a second semiconductor layer on the first semiconductor layer; a third semiconductor layer on the second semiconductor layer; a fourth semiconductor layer in a part of the third semiconductor layer; a trench penetrating the fourth semiconductor layer and the third semiconductor layer and reaching the second semiconductor layer; a gate insulation film on an inner wall of the trench; a gate electrode on the gate insulation film in the trench; a first electrode; and a second electrode. The trench includes a bottom with a curved surface having a curvature radius equal to or smaller than 0.5 μm.
摘要翻译：一种半导体器件包括：第一半导体层; 在所述第一半导体层上的第二半导体层; 第二半导体层上的第三半导体层; 在所述第三半导体层的一部分中的第四半导体层; 穿过第四半导体层和第三半导体层并到达第二半导体层的沟槽; 沟槽内壁上的栅极绝缘膜; 在沟槽中的栅极绝缘膜上的栅电极; 第一电极; 和第二电极。沟槽包括具有曲率半径等于或小于0.5μm的曲面的底部。

3. 发明授权

US07667269B2 Trench gate type semiconductor device 有权
标题翻译：沟槽型半导体器件
公开(公告)号：US07667269B2
公开(公告)日：2010-02-23
申请号：US11398551
申请日：2006-04-06
申请人： Yukio Tsuzuki , Norihito Tokura , Yoshihiko Ozeki , Kensaku Yamamoto
发明人： Yukio Tsuzuki , Norihito Tokura , Yoshihiko Ozeki , Kensaku Yamamoto
IPC分类号： H01L23/62
CPC分类号： H01L29/7397 , H01L29/1095 , H01L29/42376 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes: a first semiconductor layer; a second semiconductor layer on the first semiconductor layer; a third semiconductor layer on the second semiconductor layer; a fourth semiconductor layer in a part of the third semiconductor layer; a trench penetrating the fourth semiconductor layer and the third semiconductor layer and reaching the second semiconductor layer; a gate insulation film on an inner wall of the trench; a gate electrode on the gate insulation film in the trench; a first electrode; and a second electrode. The trench includes a bottom with a curved surface having a curvature radius equal to or smaller than 0.5 μm.
摘要翻译：一种半导体器件包括：第一半导体层; 在所述第一半导体层上的第二半导体层; 第二半导体层上的第三半导体层; 在所述第三半导体层的一部分中的第四半导体层; 穿过第四半导体层和第三半导体层并到达第二半导体层的沟槽; 沟槽内壁上的栅极绝缘膜; 在沟槽中的栅极绝缘膜上的栅电极; 第一电极; 和第二电极。沟槽包括具有曲率半径等于或小于0.5μm的曲面的底部。

4. 发明授权

US07498634B2 Semiconductor device having IGBT and diode 有权
标题翻译：具有IGBT和二极管的半导体器件
公开(公告)号：US07498634B2
公开(公告)日：2009-03-03
申请号：US11649367
申请日：2007-01-04
申请人： Yukio Tsuzuki , Norihito Tokura
发明人： Yukio Tsuzuki , Norihito Tokura
IPC分类号： H01L29/76
CPC分类号： H01L27/0664 , H01L29/0834 , H01L29/7397 , H01L29/861
摘要： A semiconductor device includes: a substrate having a first side and a second side; an IGBT; and a diode. The substrate includes a first layer, a second layer on the first layer, a first side N region on the second layer, second side N and P regions on the second side of the first layer, a first electrode in a first trench for a gate electrode, a second electrode on the first side N region and in a second trench for an emitter electrode and an anode electrode, and a third electrode on the second side N and P regions for a collector electrode and a cathode. The first trench penetrates the first side N region and the second layer, and reaches the first layer. The second trench penetrates the first side N region, and reaches the second layer.
摘要翻译：一种半导体器件包括：具有第一面和第二面的衬底; IGBT; 和二极管。衬底包括第一层，第一层上的第二层，第二层上的第一侧N区，第一层的第二侧上的第二侧N和P区，用于栅极的第一沟槽中的第一电极电极，第一侧N区域上的第二电极和用于发射电极和阳极电极的第二沟槽中，以及在第二侧的第三电极N和用于集电极和阴极的P区域。第一沟槽穿过第一侧N区和第二层，并到达第一层。第二沟槽穿过第一侧N区域并到达第二层。

5. 发明申请

US20080315248A1 Semiconductor Device Having Igbt Cell and Diode Cell and Method for Designing the Same 有权
标题翻译：具有Igbt电池和二极管电池的半导体器件及其设计方法
公开(公告)号：US20080315248A1
公开(公告)日：2008-12-25
申请号：US11885334
申请日：2007-03-20
申请人： Norihito Tokura , Yukio Tsuzuki , Kenji Kouno
发明人： Norihito Tokura , Yukio Tsuzuki , Kenji Kouno
IPC分类号： H01L29/739 , G06F17/50
CPC分类号： H01L29/7395 , H01L27/0664 , H01L29/861
摘要： A semiconductor device includes: a semiconductor substrate; an IGBT cell; and a diode cell. The substrate includes a first layer on a first surface, second and third layers adjacently arranged on a second surface of the substrate and a fourth layer between the first layer and the second and third layers. The first layer provides a drift layer of the IGBT cell and the diode cell. The second layer provides a collector layer of the IGBT cell. The third layer provides one electrode connection layer of the diode cell. A resistivity ρ1 and a thickness L1 of the first layer, a resistivity ρ2 and a thickness L2 of the fourth layer, and a half of a minimum width W2 of the second layer on a substrate plane have a relationship of (ρ1/ρ2)×(L1·L2/W22)
摘要翻译：半导体器件包括：半导体衬底; IGBT单元; 和二极管单元。衬底包括在第一表面上的第一层，相邻地布置在衬底的第二表面上的第二层和第三层以及在第一层和第二层和第三层之间的第四层。第一层提供了IGBT单元和二极管单元的漂移层。第二层提供IGBT单元的集电极层。第三层提供二极管单元的一个电极连接层。第一层的电阻率rho1和第一层的厚度L1，第四层的电阻率rho2和厚度L2以及第二层在基板平面上的最小宽度W2的一半具有（rho1 / rho2）× （L1.L2 / W22）<1.6。

6. 发明授权

US08102025B2 Semiconductor device having IGBT and diode 有权
标题翻译：具有IGBT和二极管的半导体器件
公开(公告)号：US08102025B2
公开(公告)日：2012-01-24
申请号：US11709272
申请日：2007-02-22
申请人： Yoshihiko Ozeki , Norihito Tokura , Yukio Tsuzuki
发明人： Yoshihiko Ozeki , Norihito Tokura , Yukio Tsuzuki
IPC分类号： H01L29/66
CPC分类号： H01L27/0611 , H01L29/7395 , H01L29/8611
摘要： A semiconductor device includes: a semiconductor substrate; a IGBT region including a first region on a first surface of the substrate and providing a channel-forming region and a second region on a second surface of the substrate and providing a collector; a diode region including a third region on the first surface and providing an anode or a cathode and a fourth region on the second surface and providing the anode or the cathode; a periphery region including a fifth region on the first surface and a sixth region on the second surface. The first, third and fifth regions are commonly and electrically coupled, and the second, fourth and sixth regions are commonly and electrically coupled with one another.
摘要翻译：半导体器件包括：半导体衬底; IGBT区域，包括在所述基板的第一表面上的第一区域，并且在所述基板的第二表面上提供沟道形成区域和第二区域，并提供集电体; 二极管区域，包括在第一表面上的第三区域，并在第二表面上提供阳极或阴极和第四区域，并提供阳极或阴极; 外围区域，包括在第一表面上的第五区域和第二表面上的第六区域。第一，第三和第五区域通常和电耦合，并且第二，第四和第六区域彼此通常电耦合。

7. 发明申请

US20070170549A1 Semiconductor device having IGBT and diode 有权
标题翻译：具有IGBT和二极管的半导体器件
公开(公告)号：US20070170549A1
公开(公告)日：2007-07-26
申请号：US11649367
申请日：2007-01-04
申请人： Yukio Tsuzuki , Norihito Tokura
发明人： Yukio Tsuzuki , Norihito Tokura
IPC分类号： H01L27/082
CPC分类号： H01L27/0664 , H01L29/0834 , H01L29/7397 , H01L29/861
摘要： A semiconductor device includes: a substrate having a first side and a second side; an IGBT; and a diode. The substrate includes a first layer, a second layer on the first layer, a first side N region on the second layer, second side N and P regions on the second side of the first layer, a first electrode in a first trench for a gate electrode, a second electrode on the first side N region and in a second trench for an emitter electrode and an anode electrode, and a third electrode on the second side N and P regions for a collector electrode and a cathode. The first trench penetrates the first side N region and the second layer, and reaches the first layer. The second trench penetrates the first side N region, and reaches the second layer.
摘要翻译：一种半导体器件包括：具有第一面和第二面的衬底; IGBT; 和二极管。衬底包括第一层，第一层上的第二层，第二层上的第一侧N区，第一层的第二侧上的第二侧N和P区，用于栅极的第一沟槽中的第一电极电极，第一侧N区域上的第二电极和用于发射电极和阳极电极的第二沟槽中，以及在第二侧的第三电极N和用于集电极和阴极的P区域。第一沟槽穿过第一侧N区和第二层，并到达第一层。第二沟槽穿过第一侧N区域并到达第二层。

8. 发明授权

US07692214B2 Semiconductor device having IGBT cell and diode cell and method for designing the same 有权
标题翻译：具有IGBT单元和二极管单元的半导体器件及其设计方法
公开(公告)号：US07692214B2
公开(公告)日：2010-04-06
申请号：US11885334
申请日：2007-03-20
申请人： Norihito Tokura , Yukio Tsuzuki , Kenji Kouno
发明人： Norihito Tokura , Yukio Tsuzuki , Kenji Kouno
IPC分类号： H01L29/00
CPC分类号： H01L29/7395 , H01L27/0664 , H01L29/861
摘要： A semiconductor device includes: a semiconductor substrate; an IGBT cell; and a diode cell. The substrate includes a first layer on a first surface, second and third layers adjacently arranged on a second surface of the substrate and a fourth layer between the first layer and the second and third layers. The first layer provides a drift layer of the IGBT cell and the diode cell. The second layer provides a collector layer of the IGBT cell. The third layer provides one electrode connection layer of the diode cell. A resistivity ρ1 and a thickness L1 of the first layer, a resistivity ρ2 and a thickness L2 of the fourth layer, and a half of a minimum width W2 of the second layer on a substrate plane have a relationship of (ρ1/ρ2)×(L1·L2/W22)
摘要翻译：半导体器件包括：半导体衬底; IGBT单元; 和二极管单元。衬底包括在第一表面上的第一层，相邻地布置在衬底的第二表面上的第二层和第三层以及在第一层和第二层和第三层之间的第四层。第一层提供了IGBT单元和二极管单元的漂移层。第二层提供IGBT单元的集电极层。第三层提供二极管单元的一个电极连接层。第一层的电阻率和第一层的厚度L1，第四层的电阻率rgr2和厚度L2以及第二层在基板平面上的最小宽度W2的一半具有（＆rgr ; 1 /＆rgr; 2）×（L1·L2 / W22）<1.6。

9. 发明授权

US07456484B2 Semiconductor device having IGBT and diode 失效
标题翻译：具有IGBT和二极管的半导体器件
公开(公告)号：US07456484B2
公开(公告)日：2008-11-25
申请号：US11648894
申请日：2007-01-03
申请人： Yoshihiko Ozeki , Norihito Tokura , Yukio Tsuzuki
发明人： Yoshihiko Ozeki , Norihito Tokura , Yukio Tsuzuki
IPC分类号： H01L21/00
CPC分类号： H01L29/7395 , H01L27/0664 , H01L29/0834 , H01L29/66333 , H01L29/861
摘要： A semiconductor device includes: a semiconductor substrate having first and second semiconductor layers; an IGBT having a collector region, a base region in the first semiconductor layer, an emitter region in the base region, and a channel region in the base region between the emitter region and the first semiconductor layer; a diode having an anode region in the first semiconductor layer and a cathode electrode on the first semiconductor layer; and a resistive region. The collector region and the second semiconductor layer are disposed on the first semiconductor layer. The resistive region for increasing a resistance of the second semiconductor layer is disposed in a current path between the channel region and the cathode electrode through the first semiconductor layer and the second semiconductor layer with bypassing the collector region.
摘要翻译：半导体器件包括：具有第一和第二半导体层的半导体衬底; IGBT，其具有集电极区域，第一半导体层中的基极区域，基极区域中的发射极区域和发射极区域与第一半导体层之间的基极区域中的沟道区域; 在所述第一半导体层中具有阳极区域的二极管和所述第一半导体层上的阴极电极; 和电阻区域。集电极区域和第二半导体层设置在第一半导体层上。用于增加第二半导体层的电阻的电阻区域通过绕过集电极区域而被布置在通过第一半导体层和第二半导体层的沟道区域和阴极电极之间的电流通路中。

10. 发明申请

US20070158680A1 Semiconductor device having IGBT and diode 失效
标题翻译：具有IGBT和二极管的半导体器件
公开(公告)号：US20070158680A1
公开(公告)日：2007-07-12
申请号：US11648894
申请日：2007-01-03
申请人： Yoshihiko Ozeki , Norihito Tokura , Yukio Tsuzuki
发明人： Yoshihiko Ozeki , Norihito Tokura , Yukio Tsuzuki
IPC分类号： H01L29/74
CPC分类号： H01L29/7395 , H01L27/0664 , H01L29/0834 , H01L29/66333 , H01L29/861
摘要： A semiconductor device includes: a semiconductor substrate having first and second semiconductor layers; an IGBT having a collector region, a base region in the first semiconductor layer, an emitter region in the base region, and a channel region in the base region between the emitter region and the first semiconductor layer; a diode having an anode region in the first semiconductor layer and a cathode electrode on the first semiconductor layer; and a resistive region. The collector region and the second semiconductor layer are disposed on the first semiconductor layer. The resistive region for increasing a resistance of the second semiconductor layer is disposed in a current path between the channel region and the cathode electrode through the first semiconductor layer and the second semiconductor layer with bypassing the collector region.
摘要翻译：半导体器件包括：具有第一和第二半导体层的半导体衬底; IGBT，其具有集电极区域，第一半导体层中的基极区域，基极区域中的发射极区域和发射极区域与第一半导体层之间的基极区域中的沟道区域; 在所述第一半导体层中具有阳极区域和在所述第一半导体层上的阴极电极的二极管; 和电阻区域。集电极区域和第二半导体层设置在第一半导体层上。用于增加第二半导体层的电阻的电阻区域通过绕过集电极区域而被布置在通过第一半导体层和第二半导体层的沟道区域和阴极电极之间的电流通路中。

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