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1. 发明申请

US20090104774A1 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20090104774A1
公开(公告)日：2009-04-23
申请号：US11815007
申请日：2006-01-25
申请人： Yukiko Furukawa , John MacNeil
发明人： Yukiko Furukawa , John MacNeil
IPC分类号： H01L21/44
CPC分类号： H01L21/31695 , H01L21/02126 , H01L21/02203 , H01L21/02211 , H01L21/02274 , H01L21/0234 , H01L21/02362 , H01L21/31144 , H01L21/3122 , H01L21/3212 , H01L21/76802 , H01L21/7682 , H01L21/76826 , H01L21/76829 , H01L21/76834 , H01L2221/1047
摘要： This invention relates to a method of manufacturing a semiconductor device. In this method, a semiconductor device is provided comprising a substrate (10), the substrate (10) being covered with a low-k precursor layer (20) having a surface (25). After this step, a partial curing step is performed in which a dense layer (30) is formed at or near the surface (25) of a low-k precursor layer (20). This dense layer (30) can act as a protective layer (30). The low-k precursor material (20) is chosen from a group of materials having the property that they are applicable in a non-cured or partially cured state. The main advantage of this method is that no separate protective layer (30) needs to be provided to the low-k precursor layer (20), because the dense layer (30) is formed out of the low-k precursor layer (20) itself. The dense layer (30) therefore has a good adhesion to the low-k precursor layer (20).
摘要翻译：本发明涉及半导体器件的制造方法。在该方法中，提供了一种半导体器件，其包括衬底（10），衬底（10）被具有表面（25）的低k前体层（20）覆盖。在该步骤之后，进行部分固化步骤，其中在低k前体层（20）的表面（25）处或附近形成致密层（30）。该致密层（30）可用作保护层（30）。低k前体材料（20）选自具有它们可应用于非固化或部分固化状态的性质的一组材料。该方法的主要优点在于，由于致密层（30）由低k前体层（20）形成，所以不需要向低k前体层（20）提供单独的保护层（30）本身。因此，致密层（30）对低k前体层（20）具有良好的粘附性。

2. 发明授权

US07309662B1 Method and apparatus for forming a film on a substrate 失效
标题翻译：在基板上形成膜的方法和装置
公开(公告)号：US07309662B1
公开(公告)日：2007-12-18
申请号：US09763641
申请日：2000-06-26
申请人： Katherine Giles , Knut Beekmann , Christopher David Dobson , John MacNeil , Antony Paul Wilby
发明人： Katherine Giles , Knut Beekmann , Christopher David Dobson , John MacNeil , Antony Paul Wilby
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/02126 , C23C16/401 , C23C16/56 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/0234 , H01L21/3105 , H01L21/31116 , H01L21/31604 , H01L21/31612
摘要： This invention relates to a method and apparatus for forming a film on the substrate. The method comprises supplying to the chamber in gaseous or vapor form a silicon containing organic compound and an oxidizing agent in the presence of a plasma to deposit a film on the substrate and setting the film such that carbon containing groups are retained therein. In particular embodiments the setting is achieved by exposing the film to H2 plasma.
摘要翻译：本发明涉及一种在基片上形成薄膜的方法和装置。该方法包括在等离子体存在下以气态或蒸气形式将含硅的有机化合物和氧化剂供应到室中，以将膜沉积在基材上并使膜固化以使含碳基团保留在其中。在具体实施方案中，通过将膜暴露于H 2 O 3等离子体来实现设定。

3. 发明授权

US07732307B2 Method of forming amorphous TiN by thermal chemical vapor deposition (CVD) 有权
标题翻译：通过热化学气相沉积（CVD）形成无定形TiN的方法
公开(公告)号：US07732307B2
公开(公告)日：2010-06-08
申请号：US11143953
申请日：2005-06-03
申请人： Stephen Robert Burgess , Andrew Price , Nicholas Rimmer , John MacNeil
发明人： Stephen Robert Burgess , Andrew Price , Nicholas Rimmer , John MacNeil
IPC分类号： H01L21/20
CPC分类号： H01L21/28556 , C23C16/34 , H01L21/76843 , H01L21/76862 , Y10S257/915
摘要： A modified TDEAT (tetrakisdiethylamino titanium) based MOCVD precursor for deposition of thin amorphous TiN:Si diffusion barrier layers. The TDEAT is doped with 10 at % Si using TDMAS (trisdimethlyaminosilane); the two liquids are found to form a stable solution when mixed together. Deposition occurs via pyrolysis of the vaporised precursor and NH3 on a heated substrate surface. Experimental results show that we have modified the precursor in such a way to reduce gas phase component of the deposition when compared to the unmodified TDEAT-NH3 reaction. Deposition temperatures were the range of 250-450° C. and under a range of process conditions the modified precursor shows improvements in coating conformality, a reduction in resistivity and an amorphous structure, as shown by TEM and XRD analysis. SIMS and scanning AES have shown that the film is essentially stoichiometric in Ti:N ratio and contains low levels of C (˜0.4 at %) and trace levels of incorporated Si (0.01
摘要翻译：用于沉积薄无定形TiN：Si扩散阻挡层的改性TDEAT（四十二乙基氨基钛）MOCVD前体。使用TDMAS（三羟甲基氨基硅烷）掺杂10at％的TDEAT; 当混合在一起时，发现两种液体形成稳定的溶液。沉积通过在加热的基底表面上热蒸发的前体和NH 3发生。实验结果表明，与未改性的TDEAT-NH3反应相比，我们以这种方式修饰了前体，以减少沉积的气相成分。沉积温度在250-450℃的范围内，并且在一系列工艺条件下，如TEM和XRD分析所示，改性前体显示涂层保形性的改善，电阻率的降低和无定形结构。 SIMS和扫描AES已经表明，该膜基本上是Ti:N比率的化学计量，并且含有低水平的C（〜0.4原子％）和痕量的掺入Si（0.01

4. 发明授权

US06846757B2 Dielectric layer for a semiconductor device and method of producing the same 失效
标题翻译：用于半导体器件的介电层及其制造方法
公开(公告)号：US06846757B2
公开(公告)日：2005-01-25
申请号：US10638424
申请日：2003-08-12
申请人： John MacNeil
发明人： John MacNeil
IPC分类号： C23C16/40 , C23C16/56 , H01L21/3105 , H01L21/311 , H01L21/316 , H01L21/768 , H01L21/26 , H01L21/324 , H01L21/42
CPC分类号： H01L21/02126 , C23C16/401 , C23C16/56 , H01L21/02211 , H01L21/02271 , H01L21/0234 , H01L21/3105 , H01L21/31116 , H01L21/31604 , H01L21/31612 , H01L21/76826 , H01L21/76828 , H01L21/76882
摘要： A semiconductor device includes a low dielectric constant insulating film exhibiting an Si—H Fourier Transform Infrared (FTIR) doublet defined by a first and a second peak, wherein the first peak is located at a higher wave number than the second peak, and wherein the ratio of the first peak to the second peak is greater than unity. A method of producing such a semiconductor device includes depositing a dielectric layer over a substrate and treating the dielectric layer in a hydrogen containing plasma such that the dielectric layer exhibits an Si—H Fourier Transform Infrared (FTIR) doublet defined by a first and a second peak, wherein the first peak is located at a higher wave number than the second peak, and wherein the ratio of the first peak to the second peak is greater than unity.
摘要翻译：半导体器件包括表现由第一和第二峰限定的Si-H傅里叶变换红外（FTIR）双峰的低介电常数绝缘膜，其中第一峰位于比第二峰更高的波数，并且其中第一峰值与第二峰值的比值大于一。制造这种半导体器件的方法包括在衬底上沉积电介质层并在含氢等离子体中处理电介质层，使得介电层表现出由第一和第二限定的Si-H傅里叶变换红外（FTIR）双峰峰，其中第一峰位于比第二峰更高的波数，并且其中第一峰与第二峰的比值大于1。

5. 发明授权

US06653247B2 Dielectric layer for a semiconductor device and method of producing the same 有权
公开(公告)号：US06653247B2
公开(公告)日：2003-11-25
申请号：US09942933
申请日：2001-08-31
申请人： John MacNeil
发明人： John MacNeil
IPC分类号： H01L2131
CPC分类号： H01L21/02126 , C23C16/401 , C23C16/56 , H01L21/02211 , H01L21/02271 , H01L21/0234 , H01L21/3105 , H01L21/31116 , H01L21/31604 , H01L21/31612 , H01L21/76826 , H01L21/76828 , H01L21/76882
摘要： A semiconductor device includes a low dielectric constant insulating film exhibiting an Si—H Fourier Transform Infrared (FTIR) doublet defined by a first and a second peak, wherein the first peak is located at a higher wave number than the second peak, and wherein the ratio of the first peak to the second peak is greater than unity. A method of producing such a semiconductor device includes depositing a dielectric layer over a substrate and treating the dielectric layer in a hydrogen containing plasma such that the dielectric layer exhibits an Si—H Fourier Transform Infrared (FTIR) doublet defined by a first and a second peak, wherein the first peak is located at a higher wave number than the second peak, and wherein the ratio of the first peak to the second peak is greater than unity.

6. 发明申请

US20080245770A1 Positive Displacement Pumping Chamber 审中-公开
标题翻译：正位移泵房
公开(公告)号：US20080245770A1
公开(公告)日：2008-10-09
申请号：US12089899
申请日：2006-10-11
申请人： Carl David M. Brancher , John MacNeil , Robert Kenneth Trowell
发明人： Carl David M. Brancher , John MacNeil , Robert Kenneth Trowell
IPC分类号： C23C16/00 , H01L21/306 , B44C1/22
CPC分类号： H01L21/306 , B44C1/227 , C23C16/455 , C23C16/45544 , C23C16/45589 , H01L21/6719 , H01L21/67207
摘要： A substrate processing system as illustrated at (1). A substrate (2) lies upon a piston (3) shown in both the loading position (3a) and in a processing position (3b). The substrate is loaded via a port (4) through a door (5). The loading area (7a), and/or the hole chamber (7) may be pumped out via a vacuum exhaust pipe (6) connected to a pump (not shown). A linear drive mechanism shown diagrammatically at (8) lifts the piston and the substrate in the chamber such that a process volume (7b) of the chamber is defined with poor gas conduction between the piston and the walls of the chamber.
摘要翻译：（1）所示的基板处理系统。基板（2）位于在装载位置（3a）和加工位置（3b）中示出的活塞（3）上。基板通过端口（4）通过门（5）装载。可以通过连接到泵（未示出）的真空排气管（6）将装载区域（7a）和/或孔室（7）泵出。在（8）处示意地示出的线性驱动机构将活塞和基板提升到室中，使得腔室的处理体积（7b）被限定为在活塞和室壁之间的差的气体传导。

7. 发明授权

US07351669B2 Method of forming a substantially closed void 有权
标题翻译：形成基本封闭的空隙的方法
公开(公告)号：US07351669B2
公开(公告)日：2008-04-01
申请号：US10923027
申请日：2004-08-23
申请人： John MacNeil
发明人： John MacNeil
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/7682
摘要： To form a substantially closed void between two structures on a substrate, a flowable liquid dielectric material is deposited to fill partially the space between the structures, and a surface is placed to bridge and substantially close the space between the structures. The substrate is then inverted whilst maintaining the bridge and the deposited material is allowed to flow down to be substantially supported by the surface. The material is set in its substantially supported position, and the surface is removed.
摘要翻译：为了在衬底上的两个结构之间形成基本上闭合的空隙，沉积可流动的液体电介质材料以部分地填充结构之间的空间，并且放置表面以桥接并基本上封闭结构之间的空间。然后将衬底反转，同时保持桥梁，并且允许沉积的材料向下流动以基本上由表面支撑。将材料设置在其基本上支撑的位置，并且去除表面。

8. 发明授权

US07205246B2 Forming low k dielectric layers 有权
标题翻译：形成低k电介质层
公开(公告)号：US07205246B2
公开(公告)日：2007-04-17
申请号：US10298225
申请日：2002-11-18
申请人： John MacNeil , Sajid Ishaq , Hervé Gris , Katherine Giles
发明人： John MacNeil , Sajid Ishaq , Hervé Gris , Katherine Giles
IPC分类号： H01L21/00
CPC分类号： H01L21/02126 , H01L21/02203 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/0234 , H01L21/02362 , H01L21/3122 , H01L21/31633 , H01L21/31695 , H01L23/49894 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： A low k dielectric layer is formed by depositing an unset dielectric layer on a substrate, the dielectric layer including Silicon, Carbon and Oxygen. The surface of the dielectric layer exposed to an activated gas to form a semi-permeable skin on or of the surface of the layer. The layer is then cured to render at least part of the layer porous.
摘要翻译：通过在衬底上沉积未设置的介电层来形成低k电介质层，介电层包括硅，碳和氧。电介质层的表面暴露于活性气体，以在层的表面上或表层上形成半渗透性皮肤。然后将该层固化，使层的至少部分多孔。

9. 发明申请

US20050275101A1 Amorphus TiN 有权
标题翻译：无花碱TiN
公开(公告)号：US20050275101A1
公开(公告)日：2005-12-15
申请号：US11143953
申请日：2005-06-03
申请人： Stephen Burgess , Andrew Price , Nicholas Rimmer , John MacNeil
发明人： Stephen Burgess , Andrew Price , Nicholas Rimmer , John MacNeil
IPC分类号： C23C16/34 , H01L21/285 , H01L21/4763 , H01L21/768 , H01L23/52
CPC分类号： H01L21/28556 , C23C16/34 , H01L21/76843 , H01L21/76862 , Y10S257/915
摘要： A modified TDEAT (tetrakisdiethylamino titanium) based MOCVD precursor for deposition of thin amorphous TiN:Si diffusion barrier layers. The TDEAT is doped with 10 at % Si using TDMAS (trisdimethlyaminosilane); the two liquids are found to form a stable solution when mixed together. Deposition occurs via pyrolysis of the vaporised precursor and NH3 on a heated substrate surface. Experimental results show that we have modified the precursor in such a way to reduce gas phase component of the deposition when compared to the unmodified TDEAT-NH3 reaction. Deposition temperatures were the range of 250-450° C. and under a range of process conditions the modified precursor shows improvements in coating conformality, a reduction in resistivity and an amorphous structure, as shown by TEM and XRD analysis. SIMS and scanning AES have shown that the film is essentially stoichiometric in Ti:N ratio and contains low levels of C (˜0.4 at %) and trace levels of incorporated Si (0.01
摘要翻译：用于沉积薄无定形TiN：Si扩散阻挡层的改性TDEAT（四十二乙基氨基钛）MOCVD前体。使用TDMAS（三羟甲基氨基硅烷）掺杂10at％的TDEAT; 当混合在一起时，发现两种液体形成稳定的溶液。沉积通过在加热的基底表面上热蒸发的前体和NH 3 3发生。实验结果表明，与未改性的TDEAT-NH3反应相比，我们以这种方式修饰了前体，以减少沉积的气相成分。沉积温度在250-450℃的范围内，并且在一系列工艺条件下，如TEM和XRD分析所示，改性前体显示涂层保形性的改善，电阻率的降低和无定形结构。 SIMS和扫描AES已经显示该膜基本上是Ti:N比率的化学计量，并且包含低水平的C（〜0.4at％）和痕量的掺入Si（0.01

10. 发明授权

US06627535B2 Methods and apparatus for forming a film on a substrate 失效
标题翻译：在基板上形成膜的方法和装置
公开(公告)号：US06627535B2
公开(公告)日：2003-09-30
申请号：US09760820
申请日：2001-01-17
申请人： John MacNeil , Robert John Wilby , Knut Beekman
发明人： John MacNeil , Robert John Wilby , Knut Beekman
IPC分类号： H01L214763
CPC分类号： H01L21/76835 , C23C16/30 , C23C16/36 , C23C16/505 , H01L21/02126 , H01L21/02167 , H01L21/0217 , H01L21/022 , H01L21/02211 , H01L21/02274 , H01L21/0234 , H01L21/31111 , H01L21/31116 , H01L21/3148 , H01L21/31633 , H01L21/3185 , H01L21/76801 , H01L21/76808 , H01L21/76813 , H01L21/76826 , H01L2221/1031 , Y10S438/931
摘要： This invention relates semiconductor devices incorporating an intermediate etch stop layer between two dielectric layers in which the dielectric constant of each of the layers is k≦3.5 and the etch stop layer has a selectivity of at least 2.5:1 relative to the upper layer. Methods and apparatus for forming nitrogen doped silicon carbide films, for example, for use as etch stop layers are described.
摘要翻译：本发明涉及在两个电介质层之间并入有中间蚀刻停止层的半导体器件，其中每个层的介电常数为k <3.5，并且蚀刻停止层相对于上层具有至少2.5:1的选择性。描述了用于形成氮掺杂碳化硅膜的方法和装置，例如用作蚀刻停止层。

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