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    • 10. 发明授权
    • Memory control device
    • 内存控制装置
    • US07885133B2
    • 2011-02-08
    • US12090397
    • 2006-10-19
    • Daisuke MurakamiYuji TakaiTakahide Baba
    • Daisuke MurakamiYuji TakaiTakahide Baba
    • G11C7/00
    • G06F1/3203G06F1/3237G06F1/3275Y02D10/128Y02D10/14
    • A clock enable (CKE) control circuit (112) is provided between a memory control circuit (111) and a SDRAM (120). When a system is in, e.g., a sleep state, the CKE control circuit (112) controls a CKE signal outputted to the SDRAM (120) such that it is fixed to a Low level. As a result, it is possible to halt a power supply provided to the memory control circuit (111), while maintaining the low-power-consumption mode of the SDRAM (120), so that power consumption resulting from a leakage current is suppressed. In addition, it becomes also possible to reset the memory control circuit (111), while maintaining the low-power-consumption mode of the SDRAM (120).
    • 在存储器控制电路(111)和SDRAM(120)之间提供时钟使能(CKE)控制电路(112)。 当系统处于例如休眠状态时,CKE控制电路(112)控制输出到SDRAM(120)的CKE信号,使其被固定为低电平。 结果,可以在保持SDRAM(120)的低功耗模式的同时停止提供给存储器控制电路(111)的电源,从而抑制由漏电流引起的功耗。 此外,还可以在保持SDRAM(120)的低功耗模式的同时,重置存储器控制电路(111)。