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1. 发明申请

US20070087434A1 ANTIVIRAL ARTIFICIAL CELL 审中-公开
标题翻译：抗病毒人工细胞
公开(公告)号：US20070087434A1
公开(公告)日：2007-04-19
申请号：US11535627
申请日：2006-09-27
申请人： Yujiro Naruse , Kazuhiko Itaya
发明人： Yujiro Naruse , Kazuhiko Itaya
IPC分类号： C12N7/00 , C12N5/00 , C12N7/01 , C12N5/02
CPC分类号： A61K9/1273 , A01N61/00 , A61K9/51 , A61K41/0019 , A61K47/6901 , B82Y5/00 , A01N25/34
摘要： An antiviral artificial cell includes: an artificial cytoskeleton, an artificial cytomembrane wrapping the artificial cytoskeleton, and a nanoparticle rotatably retained on the artificial cytomembrane and having a surface for capturing a virus.
摘要翻译：抗病毒人造细胞包括：人造细胞骨架，人造细胞骨架的人造细胞膜和可旋转地保留在人造细胞膜上并具有用于捕获病毒的表面的纳米颗粒。

2. 发明申请

US20070196920A1 Method and device of metamorphosing cells, and treatment apparatus using the same 审中-公开
标题翻译：变形细胞的方法和装置，以及使用其的处理装置
公开(公告)号：US20070196920A1
公开(公告)日：2007-08-23
申请号：US11507674
申请日：2006-08-22
申请人： Kazuhiro Suzuki , Yujiro Naruse , Hideyuki Funaki , Kazuhiko Itaya , Shuichi Uchikoga
发明人： Kazuhiro Suzuki , Yujiro Naruse , Hideyuki Funaki , Kazuhiko Itaya , Shuichi Uchikoga
IPC分类号： C12N15/09 , C12N15/00 , C12M3/00
CPC分类号： A61N5/00 , A61N1/406 , A61N5/0601
摘要： A cell metamorphosing device includes micro dishes which serves as diaphragms and hold a mixed medium containing harmful cells and nano-scale particles, an AC voltage supply, a heater and an inductor. The AC voltage supply faces with the micro dishes 2 with a space, and applies a bias to the micro dishes 2, so that the nano-scale particles are bombarded onto the harmful cells and destroy them.
摘要翻译：细胞变形装置包括用作隔膜并保持含有有害细胞和纳米级粒子的混合介质，AC电压源，加热器和电感器的微型盘。交流电压供给面与微型菜肴2具有空间，并向微型菜肴2施加偏压，使得纳米级颗粒被轰击到有害细胞上并将其破坏。

3. 发明授权

US08648431B2 Acoustic semiconductor device 失效
标题翻译：声学半导体器件
公开(公告)号：US08648431B2
公开(公告)日：2014-02-11
申请号：US13220116
申请日：2011-08-29
申请人： Kazuhide Abe , Tadahiro Sasaki , Atsuko Iida , Kazuhiko Itaya , Takashi Kawakubo
发明人： Kazuhide Abe , Tadahiro Sasaki , Atsuko Iida , Kazuhiko Itaya , Takashi Kawakubo
IPC分类号： H01L29/84
CPC分类号： H03J3/20 , H03B5/326 , H03H9/02566
摘要： According to one embodiment, an acoustic semiconductor device includes an element unit, and a first terminal. The element unit includes an acoustic resonance unit. The acoustic resonance unit includes a semiconductor crystal. An acoustic standing wave is excitable in the acoustic resonance unit and is configured to be synchronously coupled with electric charge density within at least one portion of the semiconductor crystal via deformation-potential coupling effect. The first terminal is electrically connected to the element unit. At least one selected from outputting and inputting an electrical signal is implementable via the first terminal. The electrical signal is coupled with the electric charge density. The outputting the electrical signal is from the acoustic resonance unit, and the inputting the electrical signal is into the acoustic resonance unit.
摘要翻译：根据一个实施例，声学半导体器件包括元件单元和第一端子。元件单元包括声共振单元。声共振单元包括半导体晶体。声驻波在声共振单元中是可兴奋的，并且被配置为通过变形电势耦合效应与半导体晶体的至少一部分内的电荷密度同步耦合。第一端子电连接到元件单元。从输出和输入电信号中选出的至少一个可经由第一终端实现。电信号与电荷密度耦合。输出电信号来自声共振单元，并且输入电信号进入声共振单元。

4. 发明申请

US20130256009A1 EBG STRUCTURE, SEMICONDUCTOR DEVICE, AND PRINTED CIRCUIT BOARD 有权
标题翻译： EBG结构，半导体器件和印刷电路板
公开(公告)号：US20130256009A1
公开(公告)日：2013-10-03
申请号：US13677840
申请日：2012-11-15
申请人： Tadahiro SASAKI , Kazuhiko Itaya , Hiroshi Yamada
发明人： Tadahiro SASAKI , Kazuhiko Itaya , Hiroshi Yamada
IPC分类号： H05K1/16 , H05K1/09
CPC分类号： H05K1/162 , H01L2224/16225 , H01L2924/0002 , H05K1/0236 , H05K1/09 , H05K1/185 , H05K2201/0715 , H01L2924/00
摘要： An EBG structure according to an embodiment includes an electrode unit made of a first conductor and provided with a space, a patch unit provided approximately parallel to the electrode unit and made of a second conductor, an insulating layer provided between the electrode unit and the patch unit, a first via provided between the patch unit and the electrode unit in the insulating layer and connected to the patch unit and the electrode unit, and a second via provided between the patch unit and the space in the insulating layer, connected to the patch unit, and not connected to the electrode unit.
摘要翻译：根据实施例的EBG结构包括由第一导体制成并且设置有空间的电极单元，设置成大致平行于电极单元并由第二导体制成的贴片单元，设置在电极单元和贴片之间的绝缘层单元，在所述绝缘层中的所述贴片单元和所述电极单元之间设置并连接到所述贴片单元和所述电极单元的第一通孔，以及设置在所述贴片单元和所述绝缘层中的与所述贴片单元，而不连接到电极单元。

5. 发明授权

US08324707B2 Power amplifier 失效
标题翻译：功率放大器
公开(公告)号：US08324707B2
公开(公告)日：2012-12-04
申请号：US13050545
申请日：2011-03-17
申请人： Tadahiro Sasaki , Kazuhide Abe , Atsuko Iida , Kazuhiko Itaya
发明人： Tadahiro Sasaki , Kazuhide Abe , Atsuko Iida , Kazuhiko Itaya
IPC分类号： H01L27/105
CPC分类号： H01L27/088 , H01L21/823493 , H01L27/0207 , H01L27/0922 , H01L29/41758 , H01L29/4238 , H01L29/78
摘要： According to an embodiment, a power amplifier is provided with at least one first growth ring gate structure and multiple second growth ring gate structures. The first growth ring gate structure is bounded by a semiconductor layer and performs a power amplification operation. The multiple second growth ring gate structures are bounded by the semiconductor layer and are arranged adjacently around the first growth ring gate structure in a surrounding manner. When the first growth ring gate structure performs a power amplification operation, the multiple second growth ring gate structures are depleted by applying a reverse bias to the multiple second growth ring gate structures whereby the depleted multiple second growth ring gate structures isolate the first growth ring gate structure from a surrounding portion.
摘要翻译：根据实施例，功率放大器设置有至少一个第一增长环栅极结构和多个第二增长环栅极结构。第一生长环栅极结构由半导体层限制并进行功率放大操作。多个第二生长环形栅极结构由半导体层限制，并且以周围的方式围绕第一生长环栅极结构相邻布置。当第一生长环栅极结构执行功率放大操作时，通过向多个第二生长环栅极结构施加反向偏压来耗尽多个第二生长环栅结构，由此耗尽的多个第二生长环栅极结构将第一生长环栅极隔离结构从周围部分。

6. 发明授权

US07893525B2 Semiconductor device having an adhesive portion with a stacked structure and method for manufacturing the same 有权
标题翻译：具有层叠结构的粘合部的半导体装置及其制造方法
公开(公告)号：US07893525B2
公开(公告)日：2011-02-22
申请号：US12350727
申请日：2009-01-08
申请人： Atsuko Iida , Yutaka Onozuka , Kazuhiko Itaya
发明人： Atsuko Iida , Yutaka Onozuka , Kazuhiko Itaya
IPC分类号： H01L21/98
CPC分类号： B81C1/00253 , B81C1/00238 , H01L21/568 , H01L23/295 , H01L23/3135 , H01L24/19 , H01L24/96 , H01L2224/04105 , H01L2224/24137 , H01L2224/24195 , H01L2924/10253 , H01L2924/1461 , H01L2924/15788 , H01L2924/18162 , H01L2924/19105 , H01L2924/3511 , H01L2924/00
摘要： It is made possible to restrict warpage at the time of resin cure and achieve a smaller thickness. A semiconductor device includes: a first chip including a MEMS device and a first pad formed on an upper face of the MEMS device, the first pad being electrically connected to the MEMS device; a second chip including a semiconductor device and a second pad formed on an upper face of the semiconductor device, the second pad being electrically connected to the semiconductor device; and an adhesive portion having a stacked structure, and bonding a side face of the first chip and a side face of the second chip, the stacked structure including a first adhesive film formed by adding a first material constant modifier to a first resin, and a second adhesive film formed by adding a second material constant modifier to a second resin.
摘要翻译：可以在树脂固化时限制翘曲并实现更小的厚度。半导体器件包括：第一芯片，其包括MEMS器件和形成在MEMS器件的上表面上的第一焊盘，第一焊盘电连接到MEMS器件; 包括半导体器件的第二芯片和形成在所述半导体器件的上表面上的第二焊盘，所述第二焊盘电连接到所述半导体器件; 以及具有堆叠结构的粘合部分，并且将第一芯片的侧面和第二芯片的侧面接合，所述堆叠结构包括通过将第一材料常数改性剂添加到第一树脂而形成的第一粘合膜，以及通过将第二材料常数改性剂加入到第二树脂中形成的第二粘合剂膜。

7. 发明授权

US07830068B2 Actuator and electronic hardware using the same 失效
标题翻译：执行器和电子硬件使用相同
公开(公告)号：US07830068B2
公开(公告)日：2010-11-09
申请号：US12354182
申请日：2009-01-15
申请人： Michihiko Nishigaki , Toshihiko Nagano , Kazuhiko Itaya , Takashi Kawakubo
发明人： Michihiko Nishigaki , Toshihiko Nagano , Kazuhiko Itaya , Takashi Kawakubo
IPC分类号： H01L41/08
CPC分类号： H01H57/00 , B81B3/0021 , B81B2201/032 , H01G5/18 , H01H2057/006 , H01L41/094 , H01L41/0973
摘要： An actuator includes a first beam, a first fixed part, a second beam, a first connective part, and a first fixed electrode. The first beam extends from a first fixed end to a first connective end, and the first fixed part connects the first fixed end and the substrate and supports the first beam above a main surface of the substrate with a gap. The second beam extends from a second connective end to a first action end and is provided in parallel to the first beam, and has a first division part divided by a first slit extending from the first action end toward the second connective end. The first connective part connects the first connective end and the second connective end and holds the second beam above the main surface of the substrate with a gap. The first fixed electrode is provided on the main surface of the substrate being configured to be opposed to a part of the first division part on a side of the first action end.
摘要翻译：致动器包括第一光束，第一固定部分，第二光束，第一连接部分和第一固定电极。第一光束从第一固定端延伸到第一连接端，并且第一固定部分连接第一固定端和衬底，并且将第一光束以间隙支撑在衬底的主表面上方。第二光束从第二连接端部延伸到第一动作端部并且平行于第一光束提供，并且具有由从第一动作端向第二连接端部延伸的第一狭缝分割的第一分割部分。第一连接部分连接第一连接端和第二连接端，并且将第二光束以间隙保持在基板的主表面上方。第一固定电极设置在基板的主表面上，该主表面被配置为与第一动作端侧的第一分割部分的一部分相对。

8. 发明授权

US07770274B2 Piezoelectric thin film device and method for manufacturing the same 失效
标题翻译：压电薄膜器件及其制造方法
公开(公告)号：US07770274B2
公开(公告)日：2010-08-10
申请号：US11946910
申请日：2007-11-29
申请人： Kenya Sano , Ryoichi Ohara , Naoko Yanase , Takaaki Yasumoto , Kazuhiko Itaya , Takashi Kawakubo , Hiroshi Toyoda , Masahiko Hasunuma , Toshihiko Nagano , Kazuhide Abe , Michihiko Nishigaki , Hironobu Shibata
发明人： Kenya Sano , Ryoichi Ohara , Naoko Yanase , Takaaki Yasumoto , Kazuhiko Itaya , Takashi Kawakubo , Hiroshi Toyoda , Masahiko Hasunuma , Toshihiko Nagano , Kazuhide Abe , Michihiko Nishigaki , Hironobu Shibata
IPC分类号： H04R17/00
CPC分类号： H03H9/02015 , H01H2057/006 , H01L41/0477 , H01L41/094 , H01L41/316 , H01L41/319 , H03H3/02 , H03H9/02094 , H03H9/173 , H03H9/174 , H03H9/175 , H03H9/542 , H03H9/582 , H03H9/605 , H03H2003/021 , H03H2003/023 , H03H2003/025 , Y10T29/42 , Y10T29/435 , Y10T29/49002 , Y10T29/49005 , Y10T29/49117 , Y10T29/49155
摘要： A piezoelectric thin film device includes an amorphous metal film disposed on a substrate and a piezoelectric film disposed on the amorphous metal. One of crystal axis of the piezoelectric film is aligned in a direction perpendicular to a surface of the amorphous metal.
摘要翻译：压电薄膜器件包括设置在衬底上的非晶金属膜和设置在非晶态金属上的压电膜。压电膜的晶轴之一在垂直于非晶态金属表面的方向上排列。

9. 发明授权

US07732990B2 Piezoelectric driven MEMS device 失效
标题翻译：压电式MEMS器件
公开(公告)号：US07732990B2
公开(公告)日：2010-06-08
申请号：US11683755
申请日：2007-03-08
申请人： Michihiko Nishigaki , Toshihiko Nagano , Takashi Miyazaki , Kazuhiko Itaya , Takashi Kawakubo
发明人： Michihiko Nishigaki , Toshihiko Nagano , Takashi Miyazaki , Kazuhiko Itaya , Takashi Kawakubo
IPC分类号： H01L41/08
CPC分类号： B81B3/0072 , B81B2201/032 , H01G5/18 , H01H57/00 , H01H2057/006 , H01L41/094
摘要： A MEMS device includes: a first actuator having a first fixed end, including a stacked structure of a first lower electrode, a first piezoelectric film, and a first upper electrode, and being able to be operated by applying voltages to the first lower electrode and the first upper electrode; a second actuator having a second fixed end, being disposed in parallel with the first actuator, including a stacked structure of a second lower electrode, a second piezoelectric film, and a second upper electrode, and being able to be operated by applying voltages to the second lower electrode and the second upper electrode; and an electric circuit element having a first action part connected to the first actuator and a second action part connected to the second actuator.
摘要翻译： MEMS器件包括：第一致动器，具有第一固定端，包括第一下电极，第一压电膜和第一上电极的堆叠结构，并且能够通过向第一下电极施加电压而操作，第一上电极; 具有第二固定端的第二致动器，与所述第一致动器平行设置，包括第二下电极，第二压电膜和第二上电极的堆叠结构，并且能够通过向所述第二致动器施加电压而被操作第二下电极和第二上电极; 以及具有连接到第一致动器的第一作用部分和连接到第二致动器的第二作用部分的电路元件。

10. 发明申请

US20090179317A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090179317A1
公开(公告)日：2009-07-16
申请号：US12350727
申请日：2009-01-08
申请人： Atsuko Iida , Yutaka Onozuka , Kazuhiko Itaya
发明人： Atsuko Iida , Yutaka Onozuka , Kazuhiko Itaya
IPC分类号： H01L23/00 , H01L21/98
CPC分类号： B81C1/00253 , B81C1/00238 , H01L21/568 , H01L23/295 , H01L23/3135 , H01L24/19 , H01L24/96 , H01L2224/04105 , H01L2224/24137 , H01L2224/24195 , H01L2924/10253 , H01L2924/1461 , H01L2924/15788 , H01L2924/18162 , H01L2924/19105 , H01L2924/3511 , H01L2924/00
摘要： It is made possible to restrict warpage at the time of resin cure and achieve a smaller thickness. A semiconductor device includes: a first chip including a MEMS device and a first pad formed on an upper face of the MEMS device, the first pad being electrically connected to the MEMS device; a second chip including a semiconductor device and a second pad formed on an upper face of the semiconductor device, the second pad being electrically connected to the semiconductor device; and an adhesive portion having a stacked structure, and bonding a side face of the first chip and a side face of the second chip, the stacked structure including a first adhesive film formed by adding a first material constant modifier to a first resin, and a second adhesive film formed by adding a second material constant modifier to a second resin.
摘要翻译：可以在树脂固化时限制翘曲并实现更小的厚度。半导体器件包括：第一芯片，其包括MEMS器件和形成在MEMS器件的上表面上的第一焊盘，第一焊盘电连接到MEMS器件; 包括半导体器件的第二芯片和形成在所述半导体器件的上表面上的第二焊盘，所述第二焊盘电连接到所述半导体器件; 以及具有堆叠结构的粘合部分，并且将第一芯片的侧面和第二芯片的侧面接合，所述堆叠结构包括通过将第一材料常数改性剂添加到第一树脂而形成的第一粘合膜，以及通过将第二材料常数改性剂加入到第二树脂中形成的第二粘合剂膜。

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