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1. 发明授权

US08711134B2 Organic elelectroluminescent display 失效
标题翻译：有机电致发光显示
公开(公告)号：US08711134B2
公开(公告)日：2014-04-29
申请号：US13070188
申请日：2011-03-23
申请人： Yujiro Hara , Keiji Sugi , Nobuyoshi Saito , Tomio Ono , Akio Amano , Yukitami Mizuno
发明人： Yujiro Hara , Keiji Sugi , Nobuyoshi Saito , Tomio Ono , Akio Amano , Yukitami Mizuno
IPC分类号： G06F3/038 , G09G5/00
CPC分类号： G09G3/3208 , G02B5/201 , G09G2300/0452 , H01L27/3216 , H01L27/3218 , H01L27/322 , H01L51/5278
摘要： According to one embodiment, an organic EL display includes a substrate and a pixel. The pixel is disposed on the substrate and includes a first color displaying portion and a second color displaying portion. The first color displaying portion has a first organic light emitting layer. The second color displaying portion has a second organic light emitting layer having an emission spectrum different from an emission spectrum of the first organic light emitting layer. The first color displaying portion has two sub-pixels. One of the two sub-pixels has a color filter.
摘要翻译：根据一个实施例，有机EL显示器包括基板和像素。像素设置在基板上，并且包括第一颜色显示部分和第二颜色显示部分。第一颜色显示部分具有第一有机发光层。第二颜色显示部分具有第二有机发光层，其具有与第一有机发光层的发射光谱不同的发射光谱。第一颜色显示部分具有两个子像素。两个子像素中的一个具有滤色器。

2. 发明申请

US20070057256A1 ELEMENT FORMING SUBSTRATE, ACTIVE MATRIX SUBSTRATE, AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：元件形成基板，有源矩阵基板及其制造方法
公开(公告)号：US20070057256A1
公开(公告)日：2007-03-15
申请号：US11469709
申请日：2006-09-01
申请人： Yujiro Hara , Yutaka Onozuka , Keiji Sugi , Masahiko Akiyama
发明人： Yujiro Hara , Yutaka Onozuka , Keiji Sugi , Masahiko Akiyama
IPC分类号： H01L29/04
CPC分类号： H01L27/1214 , H01L27/1266 , H01L29/04
摘要： An element forming substrate includes a substrate and a plurality of elements which are arranged in a matrix form on the substrate. Each of the elements includes a thin film transistor and contact pads connected to the transistor, and has peripheral sides separated from adjacent elements in a plane of the substrate. A channel direction of the transistor is inclined relative to the peripheral sides of the elements.
摘要翻译：元件形成基板包括基板和以矩阵形式布置在基板上的多个元件。每个元件包括薄膜晶体管和连接到晶体管的接触焊盘，并且在基板的平面中具有与相邻元件分离的周边。晶体管的沟道方向相对于元件的周边倾斜。

3. 发明申请

US20090244045A1 DISPLAY DEVICE AND A DRIVING METHOD OF THE DISPLAY DEVICE 审中-公开
标题翻译：显示装置和显示装置的驱动方法
公开(公告)号：US20090244045A1
公开(公告)日：2009-10-01
申请号：US12402043
申请日：2009-03-11
申请人： Nobuyoshi SAITO , Tomomasa Ueda , Yujiro Hara
发明人： Nobuyoshi SAITO , Tomomasa Ueda , Yujiro Hara
IPC分类号： G06F3/038
CPC分类号： G09G3/3233 , G09G2300/0819 , G09G2300/0823 , G09G2300/0861 , G09G2320/043
摘要： This disclosure concerns a display device including an n-type drive transistor controlling a current flowing the light emitting element; a bias transistor; a Vt detection transistor; a capacitor; a scanning transistor, wherein before setting the first electrode of the capacitor to have the threshold voltage of the drive transistor, the bias transistor connects a first signal line to the gate of the drive transistor to apply the negative bias to the gate of the drive transistor, the scanning line driver sets the first electrode to have a higher level potential than the threshold voltage of the drive transistor, and the Vt detection transistor connects the gate to the drain of the drive transistor to set the first electrode to have the threshold voltage of the drive transistor.
摘要翻译：本公开涉及包括控制流过发光元件的电流的n型驱动晶体管的显示装置; 偏置晶体管; Vt检测晶体管; 电容器扫描晶体管，其中在将所述电容器的第一电极设置为具有所述驱动晶体管的阈值电压之前，所述偏置晶体管将第一信号线连接到所述驱动晶体管的栅极，以将所述负偏压施加到所述驱动晶体管的栅极扫描线驱动器将第一电极设置为具有比驱动晶体管的阈值电压更高的电位电位，并且Vt检测晶体管将栅极连接到驱动晶体管的漏极，以将第一电极设置为具有阈值电压驱动晶体管

4. 发明申请

US20120075260A1 ACTIVE-MATRIX ORGANIC EL DISPLAY DEVICE AND METHOD FOR DRIVING SAME 审中-公开
标题翻译：有源矩阵有机EL显示装置及其驱动方法
公开(公告)号：US20120075260A1
公开(公告)日：2012-03-29
申请号：US13051201
申请日：2011-03-18
申请人： Nobuyoshi SAITO , Yujiro Hara , Tomomasa Ueda , Shintaro Nakano , Kentaro Miura
发明人： Nobuyoshi SAITO , Yujiro Hara , Tomomasa Ueda , Shintaro Nakano , Kentaro Miura
IPC分类号： G09G5/00
CPC分类号： G09G3/3225 , G09G2300/0842 , G09G2320/043 , G09G2320/045
摘要： According to one embodiment, an active-matrix organic EL display device includes a display region and a peripheral region. The display region includes a plurality of pixels disposed in a matrix configuration. The peripheral region includes a drive circuit. The pixel includes a bottom gate-type first transistor, a cathode electrode, an anode electrode, and an organic EL layer provided between the cathode electrode and the anode electrode. The drive circuit includes a bottom gate-type second transistor and a back gate electrode provided on the second transistor. A gate potential of the first transistor is lower than a potential of the cathode electrode when the pixel displays a minimum luminance.
摘要翻译：根据一个实施例，有源矩阵有机EL显示装置包括显示区域和周边区域。显示区域包括以矩阵构造布置的多个像素。外围区域包括驱动电路。像素包括底栅型第一晶体管，阴极电极，阳极电极和设置在阴极电极和阳极电极之间的有机EL层。驱动电路包括底栅型第二晶体管和设置在第二晶体管上的背栅电极。当像素显示最小亮度时，第一晶体管的栅极电位低于阴极电位。

5. 发明申请

US20090079725A1 DISPLAY DEVICE AND METHOD FOR DRIVING THE SAME 审中-公开
标题翻译：显示装置及其驱动方法
公开(公告)号：US20090079725A1
公开(公告)日：2009-03-26
申请号：US12210516
申请日：2008-09-15
申请人： Nobuyoshi Saito , Tomomasa Ueda , Yujiro Hara
发明人： Nobuyoshi Saito , Tomomasa Ueda , Yujiro Hara
IPC分类号： G06F3/038
CPC分类号： G09G3/3233 , G09G2300/0852 , G09G2310/0256 , G09G2310/0262 , G09G2320/043
摘要： A display device includes: a drive circuit supplying a first signal voltage and a first reverse bias in a first frame time period, and supplying a second signal voltage and a second reverse bias in a second frame time period subsequent to the first frame time period; a first drive TFT receiving the first signal voltage to supply a first drive current based on the first signal voltage in the first frame time period, and receiving the second reverse bias in the second frame time period; a second drive TFT receiving the first reverse bias in the first frame time period, and receiving the second signal voltage to supply a second drive current based on the second signal voltage in the second frame time period; and a display element emitting light based on the first drive current in the first frame time period and emitting light based on the second drive current in the second frame time period.
摘要翻译：显示装置包括：驱动电路，在第一帧时间段内提供第一信号电压和第一反向偏置，并且在第一帧时间段之后的第二帧时间段内提供第二信号电压和第二反向偏置; 第一驱动TFT接收第一信号电压，以在第一帧时间段内基于第一信号电压提供第一驱动电流，以及在第二帧时间段中接收第二反向偏置; 在第一帧时间段中接收第一反向偏置的第二驱动TFT，并且在第二帧时间段中基于第二信号电压接收第二信号电压以提供第二驱动电流; 以及显示元件，其基于第一帧时间段中的第一驱动电流发光，并且在第二帧时间段中基于第二驱动电流发光。

6. 发明授权

US09209311B2 Thin film transistor and method for manufacturing the same 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US09209311B2
公开(公告)日：2015-12-08
申请号：US13410892
申请日：2012-03-02
申请人： Tomomasa Ueda , Shintaro Nakano , Nobuyoshi Saito , Yujiro Hara , Shuichi Uchikoga
发明人： Tomomasa Ueda , Shintaro Nakano , Nobuyoshi Saito , Yujiro Hara , Shuichi Uchikoga
IPC分类号： H01L29/786 , B82Y10/00 , H01L29/66
CPC分类号： H01L29/7869 , B82Y10/00 , H01L29/66969
摘要： According to one embodiment, a thin film transistor includes a gate electrode, a semiconductor layer, a gate insulating film, and a source electrode and a drain electrode. The semiconductor layer includes an oxide including at least one of gallium and zinc, and indium. The gate insulating film is provided between the gate electrode and the semiconductor layer. The source electrode and a drain electrode are electrically connected to the semiconductor layer and spaced from each other. The semiconductor layer includes a plurality of fine crystallites dispersed three-dimensionally in the semiconductor layer and has periodicity in arrangement of atoms.
摘要翻译：根据一个实施例，薄膜晶体管包括栅电极，半导体层，栅极绝缘膜，以及源电极和漏电极。半导体层包括包含镓和锌中的至少一种的氧化物和铟。栅极绝缘膜设置在栅电极和半导体层之间。源电极和漏极电连接到半导体层并彼此间隔开。半导体层包括在半导体层中三维分散的多个细微晶体，并且具有原子排列的周期性。

7. 发明申请

US20110164025A1 DISPLAY DEVICE AND METHOD OF DRIVING THE SAME 有权
标题翻译：显示装置及其驱动方法
公开(公告)号：US20110164025A1
公开(公告)日：2011-07-07
申请号：US13052442
申请日：2011-03-21
申请人： Nobuyoshi SAITO , Tomomasa Ueda , Yujiro Hara
发明人： Nobuyoshi SAITO , Tomomasa Ueda , Yujiro Hara
IPC分类号： G09G5/00
CPC分类号： G09G3/3233 , G09G2300/0819 , G09G2300/0842 , G09G2320/043 , H01L51/001 , H01L51/0011 , H01L51/56
摘要： [Problem] By improving the accuracy of compensation for a threshold voltage shift of a driving transistor that controls a current supplied to a current-driven type self light-emitting element, excellent display performance is maintained over an extended period of time.[Solving Means] A pixel circuit includes a driving transistor Dr connected at its drain to a light-emitting element 11 and connected at its source to a power supply line NL; a capacitor Ck connected at its one end to a gate of the driving transistor Dr; a threshold voltage detection transistor Det connected between the drain of the driving transistor Dr and an other end of the capacitor Ck; and a reset transistor Rst connected between the source and gate of the driving transistor Dr. By charging the gate of the driving transistor Dr to a predetermined value through the reset transistor Rst and discharging charge at the other end of the capacitor Ck through the threshold voltage detection transistor Det, a potential difference between both ends of the capacitor Ck is set as a threshold voltage of the driving transistor Dr.
摘要翻译： [问题]通过提高控制提供给电流驱动型自发光元件的电流的驱动晶体管的阈值电压偏移的补偿精度，能够在延长的时间段内保持优异的显示性能。 [解决方案]像素电路包括在其漏极连接到发光元件11并在其源极处连接到电源线NL的驱动晶体管Dr; 在其一端连接到驱动晶体管Dr的栅极的电容器Ck; 连接在驱动晶体管Dr的漏极和电容器Ck的另一端之间的阈值电压检测晶体管Det; 以及连接在驱动晶体管Dr的源极和栅极之间的复位晶体管Rst通过复位晶体管Rst将驱动晶体管Dr的栅极充电至预定值，并通过阈值电压对电容器Ck的另一端放电电荷检测晶体管Det，将电容器Ck的两端之间的电位差设定为驱动晶体管Dr的阈值电压

8. 发明授权

US08933920B2 Display device and method of driving the same 有权
标题翻译：显示装置及其驱动方法
公开(公告)号：US08933920B2
公开(公告)日：2015-01-13
申请号：US13052442
申请日：2011-03-21
申请人： Nobuyoshi Saito , Tomomasa Ueda , Yujiro Hara
发明人： Nobuyoshi Saito , Tomomasa Ueda , Yujiro Hara
IPC分类号： G06F3/038 , G09G5/00 , G09G3/32 , H01L51/00 , H01L51/56
CPC分类号： G09G3/3233 , G09G2300/0819 , G09G2300/0842 , G09G2320/043 , H01L51/001 , H01L51/0011 , H01L51/56
摘要： A display device includes a plurality of pixel portions provided in a matrix form. Each of the pixel portions includes a pixel circuit and a light-emitting element. The pixel circuit includes a driving transistor connected between the light-emitting element and a first power supply line, a capacitor connected at its one end to a gate of the driving transistor, a switching transistor connected between the other end of the capacitor and a signal line, a threshold voltage detection transistor connected between a connecting point between the light-emitting element and the driving transistor, and a connecting point between the capacitor and the switching transistor, and a reset transistor connected between a connecting point between the driving transistor and the first power supply line, and a connecting point between the gate of the driving transistor and the capacitor, and connected at its gate to a reset control line.
摘要翻译：显示装置包括以矩阵形式提供的多个像素部分。每个像素部分包括像素电路和发光元件。像素电路包括连接在发光元件和第一电源线之间的驱动晶体管，在其一端连接到驱动晶体管的栅极的电容器，连接在电容器的另一端的信号与信号线路，连接在发光元件和驱动晶体管之间的连接点之间的阈值电压检测晶体管，以及电容器和开关晶体管之间的连接点，以及连接在驱动晶体管和开关晶体管之间的连接点之间的复位晶体管第一电源线以及驱动晶体管的栅极与电容器之间的连接点，并且在其栅极处连接到复位控制线。

9. 发明申请

US20120223301A1 THIN FILM TRANSISTOR, MANUFACTURING METHOD OF SAME, AND DISPLAY DEVICE 审中-公开
标题翻译：薄膜晶体管，其制造方法和显示器件
公开(公告)号：US20120223301A1
公开(公告)日：2012-09-06
申请号：US13238331
申请日：2011-09-21
申请人： Tomomasa Ueda , Shintaro Nakano , Nobuyoshi Saito , Kentaro Miura , Yujiro Hara , Hajime Yamaguchi
发明人： Tomomasa Ueda , Shintaro Nakano , Nobuyoshi Saito , Kentaro Miura , Yujiro Hara , Hajime Yamaguchi
IPC分类号： H01L33/08 , H01L21/336
CPC分类号： H01L27/1225 , H01L29/66969 , H01L29/78606 , H01L29/7869
摘要： According to one embodiment, a thin film transistor includes: a substrate; a semiconductor layer; first and second insulating films; and gate, source and drain electrodes. The semiconductor layer is provided on the substrate. The semiconductor layer is made of an oxide having indium. The semiconductor layer has first and second regions and other region. The first insulating film covers a top face of the other region. The second insulating film covers at least a pair of side surfaces of the semiconductor layer. The second insulating film is formed under a condition different from that for the first insulating film. The gate electrode is provided on the first and second insulating films or below the semiconductor layer. The source and drain electrodes are provided on the first and second regions, respectively. The drain and source electrodes sandwich the pair of the side surfaces of the semiconductor layer.
摘要翻译：根据一个实施例，薄膜晶体管包括：衬底; 半导体层; 第一和第二绝缘膜; 和栅极，源极和漏极。半导体层设置在基板上。半导体层由具有铟的氧化物制成。半导体层具有第一和第二区域和其它区域。第一绝缘膜覆盖另一区域的顶面。第二绝缘膜覆盖半导体层的至少一对侧表面。在与第一绝缘膜不同的条件下形成第二绝缘膜。栅电极设置在第一和第二绝缘膜上或半导体层下方。源极和漏极分别设置在第一和第二区域上。漏极和源电极夹着半导体层的一对侧表面。

10. 发明申请

US20120211745A1 THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US20120211745A1
公开(公告)日：2012-08-23
申请号：US13410892
申请日：2012-03-02
申请人： Tomomasa Ueda , Shintaro Nakano , Nobuyoshi Saito , Yujiro Hara , Shuichi Uchikoga
发明人： Tomomasa Ueda , Shintaro Nakano , Nobuyoshi Saito , Yujiro Hara , Shuichi Uchikoga
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/7869 , B82Y10/00 , H01L29/66969
摘要： According to one embodiment, a thin film transistor includes a gate electrode, a semiconductor layer, a gate insulating film, and a source electrode and a drain electrode. The semiconductor layer includes an oxide including at least one of gallium and zinc, and indium. The gate insulating film is provided between the gate electrode and the semiconductor layer. The source electrode and a drain electrode are electrically connected to the semiconductor layer and spaced from each other. The semiconductor layer includes a plurality of fine crystallites dispersed three-dimensionally in the semiconductor layer and has periodicity in arrangement of atoms.
摘要翻译：根据一个实施例，薄膜晶体管包括栅电极，半导体层，栅极绝缘膜，以及源电极和漏电极。半导体层包括包含镓和锌中的至少一种的氧化物和铟。栅极绝缘膜设置在栅电极和半导体层之间。源电极和漏极电连接到半导体层并彼此间隔开。半导体层包括在半导体层中三维分散的多个细微晶体，并且具有原子排列的周期性。

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