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1. 发明授权

US07135378B2 Process for fabricating a semiconductor device having a plurality of encrusted semiconductor chips 有权
标题翻译：用于制造具有多个包层半导体芯片的半导体器件的工艺
公开(公告)号：US07135378B2
公开(公告)日：2006-11-14
申请号：US10719926
申请日：2003-11-21
申请人： Yuji Takaoka , Yukihiro Kamide , Teruo Hirayama , Masaki Hatano
发明人： Yuji Takaoka , Yukihiro Kamide , Teruo Hirayama , Masaki Hatano
IPC分类号： H01L21/76 , H01L21/46 , H01L23/544
CPC分类号： H01L24/82 , H01L21/568 , H01L23/5384 , H01L23/5389 , H01L24/19 , H01L2224/04105 , H01L2224/12105 , H01L2224/24137 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01015 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01057 , H01L2924/01078 , H01L2924/01082 , H01L2924/12042 , H01L2924/18162 , H01L2924/3512 , H01L2924/00
摘要： A semiconductor device of MCM type allowing high-density assembly and a process of fabricating the same is provided. There are provided semiconductor chips mounted on a supporting substrate and incrusted in an insulation film on the supporting substrate and wiring formed in the insulation film so as to connect to each semiconductor chip through connection holes provided in the insulation film. Then, an interlayer dielectric covers such wiring that is connected to an upper layer wiring, through connection holes provided in such interlayer dielectric. In addition, an upper layer insulation film covers the upper layer wiring, and an electrode, connected to such upper layer wiring through another connection hole, is provided on such upper layer insulation film.
摘要翻译：提供允许高密度组装的MCM型半导体器件及其制造方法。提供安装在支撑基板上的半导体芯片，并且被覆在支撑基板上的绝缘膜和形成在绝缘膜中的布线，以便通过设置在绝缘膜中的连接孔连接到每个半导体芯片。然后，通过设置在该层间电介质中的连接孔，层间电介质覆盖与上层布线连接的布线。此外，上层绝缘膜覆盖上层布线，并且在这种上层绝缘膜上设置有通过另一连接孔连接到这种上层布线的电极。

2. 发明申请

US20080138932A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件及制造半导体器件的方法
公开(公告)号：US20080138932A1
公开(公告)日：2008-06-12
申请号：US11971271
申请日：2008-01-09
申请人： Masaki Hatano , Yuji Takaoka
发明人： Masaki Hatano , Yuji Takaoka
IPC分类号： H01L21/60
CPC分类号： H01L25/0655 , H01L23/5389 , H01L2224/05001 , H01L2224/05022 , H01L2224/05023 , H01L2224/05026 , H01L2224/051 , H01L2224/05568 , H01L2224/05624 , H01L2224/05647 , H01L2224/16145 , H01L2224/16225 , H01L2224/1703 , H01L2224/32145 , H01L2224/32225 , H01L2224/73204 , H01L2924/10253 , H01L2924/15153 , H01L2924/15192 , H01L2924/15311 , H01L2924/157 , H01L2924/00 , H01L2924/00014
摘要： The present invention provides a semiconductor device that is inexpensive and can suppress signal transmission delay, and a manufacturing method thereof. The semiconductor device includes: a plurality of semiconductor chips; a semiconductor substrate that has, on the same surface thereof, a chip-to-chip interconnection for electrically connecting the plurality of semiconductor chips to each other, and a plurality of chip-connection pads connected to the chip-to-chip interconnection; and a wiring board that has a plurality of lands of which pitch is larger than a pitch of the chip-connection pads, wherein a major surface of each of the plurality of semiconductor chips is connected to the chip-connection pads via a first connector so that the plurality of semiconductor chips are mounted on the semiconductor substrate, and an external-connection pad is formed on the major surface other than a region facing the semiconductor substrate, and is connected to the land on the wiring board via a second connector.
摘要翻译：本发明提供一种廉价且可以抑制信号传输延迟的半导体器件及其制造方法。半导体器件包括：多个半导体芯片; 半导体衬底，其同一表面上具有用于将多个半导体芯片彼此电连接的芯片至芯片互连以及连接到芯片至芯片互连的多个芯片连接焊盘; 以及布线板，其具有多个间距大于芯片连接焊盘的间距的焊盘，其中，多个半导体芯片中的每一个的主表面经由第一连接器连接到芯片连接焊盘，多个半导体芯片安装在半导体基板上，并且外部连接焊盘形成在除了面向半导体基板的区域之外的主表面上，并且经由第二连接器连接到布线板上的焊盘。

3. 发明授权

US07402901B2 Semiconductor device and method of manufacturing semiconductor device 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07402901B2
公开(公告)日：2008-07-22
申请号：US11366123
申请日：2006-03-02
申请人： Masaki Hatano , Yuji Takaoka
发明人： Masaki Hatano , Yuji Takaoka
IPC分类号： H01L23/06
CPC分类号： H01L25/0655 , H01L23/5389 , H01L2224/05001 , H01L2224/05022 , H01L2224/05023 , H01L2224/05026 , H01L2224/051 , H01L2224/05568 , H01L2224/05624 , H01L2224/05647 , H01L2224/16145 , H01L2224/16225 , H01L2224/1703 , H01L2224/32145 , H01L2224/32225 , H01L2224/73204 , H01L2924/10253 , H01L2924/15153 , H01L2924/15192 , H01L2924/15311 , H01L2924/157 , H01L2924/00 , H01L2924/00014
摘要： The present invention provides a semiconductor device that is inexpensive and can suppress signal transmission delay, and a manufacturing method thereof. The semiconductor device includes: a plurality of semiconductor chips; a semiconductor substrate that has, on the same surface thereof, a chip-to-chip interconnection for electrically connecting the plurality of semiconductor chips to each other, and a plurality of chip-connection pads connected to the chip-to-chip interconnection; and a wiring board that has a plurality of lands of which pitch is larger than a pitch of the chip-connection pads, wherein a major surface of each of the plurality of semiconductor chips is connected to the chip-connection pads via a first connector so that the plurality of semiconductor chips are mounted on the semiconductor substrate, and an external-connection pad is formed on the major surface other than a region facing the semiconductor substrate, and is connected to the land on the wiring board via a second connector.
摘要翻译：本发明提供一种廉价且可以抑制信号传输延迟的半导体器件及其制造方法。半导体器件包括：多个半导体芯片; 半导体衬底，其同一表面上具有用于将多个半导体芯片彼此电连接的芯片至芯片互连以及连接到芯片至芯片互连的多个芯片连接焊盘; 以及布线板，其具有多个间距大于芯片连接焊盘的间距的焊盘，其中，多个半导体芯片中的每一个的主表面经由第一连接器连接到芯片连接焊盘，多个半导体芯片安装在半导体基板上，并且外部连接焊盘形成在除了面向半导体基板的区域之外的主表面上，并且经由第二连接器连接到布线板上的焊盘。

4. 发明申请

US20060226527A1 Semiconductor device and method of manufacturing semiconductor device 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20060226527A1
公开(公告)日：2006-10-12
申请号：US11366123
申请日：2006-03-02
申请人： Masaki Hatano , Yuji Takaoka
发明人： Masaki Hatano , Yuji Takaoka
IPC分类号： H01L23/02 , H01L21/00
CPC分类号： H01L25/0655 , H01L23/5389 , H01L2224/05001 , H01L2224/05022 , H01L2224/05023 , H01L2224/05026 , H01L2224/051 , H01L2224/05568 , H01L2224/05624 , H01L2224/05647 , H01L2224/16145 , H01L2224/16225 , H01L2224/1703 , H01L2224/32145 , H01L2224/32225 , H01L2224/73204 , H01L2924/10253 , H01L2924/15153 , H01L2924/15192 , H01L2924/15311 , H01L2924/157 , H01L2924/00 , H01L2924/00014
摘要： The present invention provides a semiconductor device that is inexpensive and can suppress signal transmission delay, and a manufacturing method thereof. The semiconductor device includes: a plurality of semiconductor chips; a semiconductor substrate that has, on the same surface thereof, a chip-to-chip interconnection for electrically connecting the plurality of semiconductor chips to each other, and a plurality of chip-connection pads connected to the chip-to-chip interconnection; and a wiring board that has a plurality of lands of which pitch is larger than a pitch of the chip-connection pads, wherein a major surface of each of the plurality of semiconductor chips is connected to the chip-connection pads via a first connector so that the plurality of semiconductor chips are mounted on the semiconductor substrate, and an external-connection pad is formed on the major surface other than a region facing the semiconductor substrate, and is connected to the land on the wiring board via a second connector.
摘要翻译：本发明提供一种廉价且可以抑制信号传输延迟的半导体器件及其制造方法。半导体器件包括：多个半导体芯片; 半导体衬底，其同一表面上具有用于将多个半导体芯片彼此电连接的芯片至芯片互连以及连接到芯片至芯片互连的多个芯片连接焊盘; 以及布线板，其具有多个间距大于芯片连接焊盘的间距的焊盘，其中，多个半导体芯片中的每一个的主表面经由第一连接器连接到芯片连接焊盘，多个半导体芯片安装在半导体基板上，并且外部连接焊盘形成在除了面向半导体基板的区域之外的主表面上，并且经由第二连接器连接到布线板上的焊盘。

5. 发明授权

US08455969B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08455969B2
公开(公告)日：2013-06-04
申请号：US12078894
申请日：2008-04-08
申请人： Yoshihiro Nabe , Masaki Hatano , Hiroshi Asami , Akihiro Morimoto
发明人： Yoshihiro Nabe , Masaki Hatano , Hiroshi Asami , Akihiro Morimoto
IPC分类号： H01L31/00 , H01L21/00
CPC分类号： H01L27/14618 , H01L21/76898 , H01L23/3677 , H01L23/481 , H01L31/0203 , H01L2224/05001 , H01L2224/05009 , H01L2224/0557 , H01L2224/05647 , H01L2224/13025 , H01L2224/16 , H01L2924/01078 , H01L2924/01079 , H01L2924/10158 , H01L2924/16235 , H01L2924/3025 , H01L2924/00014
摘要： A semiconductor device includes a semiconductor substrate having a first electronic circuit and a second electronic circuit formed on an active surface, a pad electrode formed on the active surface by being connected to the first electronic circuit and/or the second electronic circuit, a first opening formed to some point along a depth of the semiconductor substrate toward the pad electrode from a surface opposite to the active surface of the semiconductor substrate, a second opening formed so as to reach the pad electrode from a bottom surface of the first opening, an insulating layer formed by covering sidewall surfaces of the first opening and the second opening, a conductive layer formed by covering at least an inner wall surface of the insulating layer and a bottom surface of the second opening, a third opening formed to some point along the depth of the semiconductor substrate from the surface opposite to the active surface of the semiconductor substrate, and a heat insulator imbedded in the third opening.
摘要翻译：半导体器件包括具有第一电子电路和形成在有源表面上的第二电子电路的半导体衬底，通过连接到第一电子电路和/或第二电子电路而形成在有源表面上的焊盘电极，第一开口从与半导体基板的有源面相反的表面沿着半导体基板的深度朝向焊盘电极的某一点形成第二开口，从第一开口的底面到达焊盘电极，形成绝缘体通过覆盖第一开口和第二开口的侧壁表面形成的层，通过覆盖绝缘层的至少内壁表面和第二开口的底表面形成的导电层，形成在沿着深度的某个点的第三开口的半导体衬底从与半导体衬底的有源表面相反的表面，以及绝热体imb 在第三次开幕。

6. 发明申请

US20110043024A1 SEAT FOR VEHICLE 有权
标题翻译：车辆座椅
公开(公告)号：US20110043024A1
公开(公告)日：2011-02-24
申请号：US12859925
申请日：2010-08-20
申请人： Motohiro KOKUBO , Masaki Hatano , Hideki Fujisawa , Kazuya Iwasa , Hiroaki Hayahara
发明人： Motohiro KOKUBO , Masaki Hatano , Hideki Fujisawa , Kazuya Iwasa , Hiroaki Hayahara
IPC分类号： B60N2/12
CPC分类号： B60N2/3013 , B60N2/0232 , B60N2/3065 , B60N2/309 , B60N2/3093 , B60N2/856 , B60N2/859
摘要： A seat for a vehicle includes a seat cushion frame reciprocating between seating and retracted positions, a seat back frame rotatable between standing and forward-tilted positions, a head rest movable between stationary and retracted positions, a pair of links provided at both end portions of the seat cushion frame on a floor in a lateral direction of the vehicle, a guide member including a guide groove extending between the seating and retracted positions, a slide member arranged at the seat cushion frame and sliding along the guide groove, a head rest retaining device retaining the head rest in the stationary position, a rotary member supported by the seat back frame and rotated by the slide member, and an interlocking device arranged between the rotary member and the head rest retaining device and releasing the head rest from the stationary position in accordance with a rotation of the rotary member.
摘要翻译：一种用于车辆的座椅包括在座位和缩回位置之间往复运动的座垫框架，可在静止和向前倾斜位置之间旋转的座椅靠背框架，在静止和缩回位置之间可移动的头枕，在两个端部位于车辆横向方向的地板上的座垫框架，引导构件，其包括在就座和缩回位置之间延伸的引导槽，布置在座垫框架处并沿着引导槽滑动的滑动构件，将头枕固定在固定位置的装置，由座椅靠背框架支撑并由滑动构件旋转的旋转构件和布置在旋转构件和头枕保持装置之间的互锁装置，并将头枕从固定位置根据旋转构件的旋转。

7. 发明授权

US07691672B2 Substrate treating method and method of manufacturing semiconductor apparatus 有权
标题翻译：基板处理方法及制造半导体装置的方法
公开(公告)号：US07691672B2
公开(公告)日：2010-04-06
申请号：US11799023
申请日：2007-04-30
申请人： Masaki Hatano , Hiroshi Asami
发明人： Masaki Hatano , Hiroshi Asami
IPC分类号： H01L21/00
CPC分类号： H01L21/76898 , H01L21/6835 , H01L24/73 , H01L24/96 , H01L24/97 , H01L25/0657 , H01L25/50 , H01L2221/68345 , H01L2224/04105 , H01L2224/05001 , H01L2224/05009 , H01L2224/05568 , H01L2224/16145 , H01L2224/16225 , H01L2224/32145 , H01L2224/32225 , H01L2224/48227 , H01L2224/73204 , H01L2224/73207 , H01L2224/73265 , H01L2224/97 , H01L2225/06513 , H01L2225/06541 , H01L2225/06582 , H01L2924/00014 , H01L2924/01004 , H01L2924/01006 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01075 , H01L2924/01078 , H01L2924/01082 , H01L2924/181 , H01L2924/18161 , H01L2924/19043 , H01L2924/3511 , H01L2224/81 , H01L2924/00012 , H01L2924/00 , H01L2224/05599 , H01L2224/05099
摘要： The present invention provides a substrate treating method including the steps of joining a one-side surface of a substrate to be treated to a support substrate, treating the substrate to be treated in the condition where the substrate to be treated is supported by the support substrate, and removing the support substrate from the substrate to be treated. The step of joining the substrate to be treated to the support substrate includes melting a joint bump formed on the substrate to be treated so as to join the substrate to be treated to the support substrate, and the step of removing the support substrate from the substrate to be treated includes polishing the support substrate so as to remove the support substrate.
摘要翻译：本发明提供了一种基板处理方法，包括以下步骤：将待处理基板的单面表面连接到支撑基板上，在被处理基板被支撑基板支撑的状态下处理待处理基板从待处理的基板上除去支撑基板。将待处理基板接合到支撑基板的步骤包括熔化形成在待处理基板上的接合凸起，以将待处理的基板接合到支撑基板，以及从基板移除支撑基板的步骤待处理包括抛光支撑基板以移除支撑基板。

8. 发明申请

US20120205817A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件和半导体器件的制造方法
公开(公告)号：US20120205817A1
公开(公告)日：2012-08-16
申请号：US13454139
申请日：2012-04-24
申请人： Hiroshi Asami , Masaki Hatano , Akihiro Morimoto
发明人： Hiroshi Asami , Masaki Hatano , Akihiro Morimoto
IPC分类号： H01L23/498
CPC分类号： H01L27/14636 , H01L21/486 , H01L23/49827 , H01L24/83 , H01L27/1464 , H01L27/1469 , H01L2224/29109 , H01L2224/29111 , H01L2224/2919 , H01L2224/83801 , H01L2924/01005 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/0665 , H01L2924/00 , H01L2924/01047 , H01L2924/01049 , H01L2924/01079 , H01L2924/01083 , H01L2224/13111 , H01L2924/00012 , H01L2224/13109 , H01L2924/00014
摘要： A semiconductor device including a component substrate of a semiconductor device; electrode pads provided on one surface of the component substrate; a support plate material reinforcing the component substrate; via holes made in the support plate material; a conducting material filled in the via holes; and a joining member interposed between the electrode pads and the conducting material and joining the component substrate and the support plate material.
摘要翻译：一种半导体器件，包括半导体器件的元件衬底; 设置在所述部件基板的一个表面上的电极焊盘; 增强部件基板的支撑板材料; 在支撑板材料上形成的通孔; 填充在通孔中的导电材料; 以及插入在电极焊盘和导电材料之间并将部件基板和支撑板材料接合的接合部件。

9. 发明申请

US20080283951A1 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20080283951A1
公开(公告)日：2008-11-20
申请号：US12078894
申请日：2008-04-08
申请人： Yoshihiro Nabe , Masaki Hatano , Hiroshi Asami , Akihiro Morimoto
发明人： Yoshihiro Nabe , Masaki Hatano , Hiroshi Asami , Akihiro Morimoto
IPC分类号： H01L31/00 , H01L21/00
CPC分类号： H01L27/14618 , H01L21/76898 , H01L23/3677 , H01L23/481 , H01L31/0203 , H01L2224/05001 , H01L2224/05009 , H01L2224/0557 , H01L2224/05647 , H01L2224/13025 , H01L2224/16 , H01L2924/01078 , H01L2924/01079 , H01L2924/10158 , H01L2924/16235 , H01L2924/3025 , H01L2924/00014
摘要： A semiconductor device includes a semiconductor substrate having a first electronic circuit and a second electronic circuit formed on an active surface, a pad electrode formed on the active surface by being connected to the first electronic circuit and/or the second electronic circuit, a first opening formed to some point along a depth of the semiconductor substrate toward the pad electrode from a surface opposite to the active surface of the semiconductor substrate, a second opening formed so as to reach the pad electrode from a bottom surface of the first opening, an insulating layer formed by covering sidewall surfaces of the first opening and the second opening, a conductive layer formed by covering at least an inner wall surface of the insulating layer and a bottom surface of the second opening, a third opening formed to some point along the depth of the semiconductor substrate from the surface opposite to the active surface of the semiconductor substrate, and a heat insulator imbedded in the third opening.
摘要翻译：半导体器件包括具有第一电子电路和形成在有源表面上的第二电子电路的半导体衬底，通过连接到第一电子电路和/或第二电子电路而形成在有源表面上的焊盘电极，第一开口从与半导体基板的有源面相反的表面沿着半导体基板的深度朝向焊盘电极的某一点形成第二开口，从第一开口的底面到达焊盘电极，形成绝缘体通过覆盖第一开口和第二开口的侧壁表面形成的层，通过覆盖绝缘层的至少内壁表面和第二开口的底表面形成的导电层，形成在沿着深度的某个点的第三开口的半导体衬底从与半导体衬底的有源表面相反的表面，以及绝热体imb 在第三次开幕。

10. 发明申请

US20070287265A1 Substrate treating method and method of manufacturing semiconductor apparatus 有权
标题翻译：基板处理方法及制造半导体装置的方法
公开(公告)号：US20070287265A1
公开(公告)日：2007-12-13
申请号：US11799023
申请日：2007-04-30
申请人： Masaki Hatano , Hiroshi Asami
发明人： Masaki Hatano , Hiroshi Asami
IPC分类号： H01L21/304
CPC分类号： H01L21/76898 , H01L21/6835 , H01L24/73 , H01L24/96 , H01L24/97 , H01L25/0657 , H01L25/50 , H01L2221/68345 , H01L2224/04105 , H01L2224/05001 , H01L2224/05009 , H01L2224/05568 , H01L2224/16145 , H01L2224/16225 , H01L2224/32145 , H01L2224/32225 , H01L2224/48227 , H01L2224/73204 , H01L2224/73207 , H01L2224/73265 , H01L2224/97 , H01L2225/06513 , H01L2225/06541 , H01L2225/06582 , H01L2924/00014 , H01L2924/01004 , H01L2924/01006 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01075 , H01L2924/01078 , H01L2924/01082 , H01L2924/181 , H01L2924/18161 , H01L2924/19043 , H01L2924/3511 , H01L2224/81 , H01L2924/00012 , H01L2924/00 , H01L2224/05599 , H01L2224/05099
摘要： The present invention provides a substrate treating method including the steps of joining a one-side surface of a substrate to be treated to a support substrate, treating the substrate to be treated in the condition where the substrate to be treated is supported by the support substrate, and removing the support substrate from the substrate to be treated. The step of joining the substrate to be treated to the support substrate includes melting a joint bump formed on the substrate to be treated so as to join the substrate to be treated to the support substrate, and the step of removing the support substrate from the substrate to be treated includes polishing the support substrate so as to remove the support substrate.
摘要翻译：本发明提供了一种基板处理方法，包括以下步骤：将待处理基板的单面表面连接到支撑基板上，在被处理基板被支撑基板支撑的状态下处理待处理基板从待处理的基板上除去支撑基板。将待处理基板接合到支撑基板的步骤包括熔化形成在待处理基板上的接合凸起，以将待处理的基板接合到支撑基板，以及从基板移除支撑基板的步骤待处理包括抛光支撑基板以移除支撑基板。

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