专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5198370A Method for producing an infrared detector 失效
标题翻译：红外探测器的制造方法
公开(公告)号：US5198370A
公开(公告)日：1993-03-30
申请号：US830852
申请日：1992-02-04
申请人： Yuji Ohkura , Tohru Takiguchi
发明人： Yuji Ohkura , Tohru Takiguchi
IPC分类号： H01L31/10 , H01L31/18
CPC分类号： H01L31/1832 , Y10S438/919 , Y10S438/971
摘要： In a method of producing an infrared detector, a first conductivity type semiconductor layer, in which lattice vacancies acting as first conductivity type carriers are formed by evaporation of an element during annealing, is formed on a substrate and dopant impurities producing a second conductivity type are diffused in an annealing step from the impurity layer into the first conductivity type semiconductor layer to form pixel regions. During the diffusion, the surface of the first conductivity type compound semiconductor layer corresponding to non-pixel regions is exposed. In the regions of the first conductivity type semiconductor layer which becomes non-pixel regions, the first conductivity type carrier concentration increases due to the lattice vacancies generated by the evaporation of an element and, even when the dopant impurity is diffused into these regions, these regions remain first conductivity type regions.
摘要翻译：在制造红外线检测器的方法中，在基板上形成第一导电型半导体层，其中，作为第一导电型载流子的晶格空位由退火时的元素蒸发而形成，产生第二导电型的掺杂杂质为在从杂质层到第一导电型半导体层的退火步骤中扩散以形成像素区域。在扩散期间，暴露与非像素区对应的第一导电型化合物半导体层的表面。在成为非像素区域的第一导电型半导体层的区域中，由于元素的蒸发产生的晶格空位，第一导电型载流子浓度增加，并且即使当掺杂剂杂质扩散到这些区域中时，这些区域保持第一导电类型区域。

2. 发明授权

US5602414A Infrared detector having active regions and isolating regions formed of CdHgTe 失效
标题翻译：具有活性区域和由CdHgTe形成的隔离区域的红外探测器
公开(公告)号：US5602414A
公开(公告)日：1997-02-11
申请号：US260791
申请日：1994-06-16
申请人： Kotaro Mitsui , Zenpei Kawazu , Kazuo Mizuguchi , Seiji Ochi , Yuji Ohkura , Norio Hayafuji , Hirotaka Kizuki , Mari Tsugami , Akihiro Takami , Manabu Katoh
发明人： Kotaro Mitsui , Zenpei Kawazu , Kazuo Mizuguchi , Seiji Ochi , Yuji Ohkura , Norio Hayafuji , Hirotaka Kizuki , Mari Tsugami , Akihiro Takami , Manabu Katoh
IPC分类号： H01L27/14 , H01L27/146 , H01L31/10 , H01L31/00
CPC分类号： H01L27/14649
摘要： In a method for fabricating an infrared detector, initially, a CdHgTe layer of a first conductivity type is produced on a front surface of a semiconductor substrate, a plurality of spaced apart CdHgTe regions of a second conductivity type, opposite the first conductivity type, are produced at the surface of the first conductivity type CdHgTe layer, and part of the surface of the first conductivity type CdHgTe layer between the second conductivity type CdHgTe regions is selectively irradiated with a charged particle beam to evaporate Hg atoms from that part, whereby a CdHgTe separation region of the first conductivity type and having a Cd composition larger than that of the first conductivity type CdHgTe layer is produced penetrating through the first conductivity type CdHgTe layer and surrounding each of the second conductivity type CdHgTe regions. Therefore, a highly-integrated high-resolution infrared detector with no crosstalk between pixels is achieved.
摘要翻译：在红外线检测器的制造方法中，首先，在半导体基板的正面形成有与第一导电型相反的多个第二导电类型的间隔开的CdHgTe区域的第一导电型CdHgTe层，在第一导电型CdHgTe层的表面产生，并且第二导电型CdHgTe区域之间的第一导电类型CdHgTe层的表面的一部分被带电粒子束选择性地照射，以从该部分蒸发Hg原子，由此CdHgTe 产生具有比第一导电型CdHgTe层的Cd组分大的第一导电类型的分离区，穿过第一导电型CdHgTe层并围绕每个第二导电型CdHgTe区。因此，实现了在像素之间没有串扰的高度集成的高分辨率红外检测器。

3. 发明授权

US5887011A Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US5887011A
公开(公告)日：1999-03-23
申请号：US801144
申请日：1997-02-18
申请人： Yuji Ohkura , Motoharu Miyashita , Shoichi Karakida
发明人： Yuji Ohkura , Motoharu Miyashita , Shoichi Karakida
IPC分类号： H01S5/00 , H01S5/22 , H01S5/223 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/2231 , H01S2304/04 , H01S5/2206 , H01S5/3432
摘要： A semiconductor laser includes a first conductivity type GaAs substrate; a AlGaAs double heterojunction structure disposed on the GaAs substrate and including an upper cladding layer having a mesa ridge stripe with a side surface that makes an angle larger than 90.degree. with a front surface of the upper cladding layer; a first current blocking layer of first conductivity type AlGaAs; and a second current blocking layer of first conductivity type AlGaAs, the first and second current blocking layers covering the mesa ridge stripe. The Al compositions of the first and second current blocking layers are larger than that of the upper cladding layer, maintaining an equivalent refractive index of an active region higher than that of other portions of the semiconductor laser. As a result, the differences between the lattice constant of the second current blocking layer and the GaAs substrate or the AlGaAs upper cladding layer are smaller than in prior art semiconductor lasers. Since the second current blocking layer is in the vicinity of the active region in the mesa ridge stripe, stress applied to the active region is reduced, thereby producing a semiconductor laser that facilitates ridge width control and burying layer growth, and with improved reliability.
摘要翻译：半导体激光器包括第一导电型GaAs衬底; AlGaAs双异质结结构，其设置在所述GaAs衬底上，并且包括具有与所述上包层的前表面成大于90°的侧面的台面脊条的上包层; 第一导电型AlGaAs的第一电流阻挡层; 以及第一导电型AlGaAs的第二电流阻挡层，所述第一和第二电流阻挡层覆盖所述台面脊状条纹。第一和第二电流阻挡层的Al组成大于上包层的Al组成，保持有源区的等效折射率高于半导体激光器的其它部分的折射率。结果，第二电流阻挡层和GaAs衬底或AlGaAs上覆层的晶格常数之间的差异比现有技术的半导体激光器小。由于第二电流阻挡层位于台脊条带中的有源区附近，所以施加到有源区的应力减小，从而产生有利于脊宽度控制和掩埋层生长以及提高可靠性的半导体激光器。

4. 发明授权

US5835516A Semiconductor laser device and method of fabricating semiconductor laser device 失效
标题翻译：半导体激光器件及半导体激光器件的制造方法
公开(公告)号：US5835516A
公开(公告)日：1998-11-10
申请号：US569881
申请日：1995-12-08
申请人： Motoharu Miyashita , Hirotaka Kizuki , Yasuaki Yoshida , Yutaka Mihashi , Yasutomo Kajikawa , Shoichi Karakida , Yuji Ohkura
发明人： Motoharu Miyashita , Hirotaka Kizuki , Yasuaki Yoshida , Yutaka Mihashi , Yasutomo Kajikawa , Shoichi Karakida , Yuji Ohkura
IPC分类号： H01L21/306 , H01S5/00 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/323 , H01S3/19 , H01L21/20
CPC分类号： H01S5/2231 , H01S5/2081 , H01S5/209 , H01S5/2206 , H01S5/221 , H01S5/32316
摘要： A method of fabricating a semiconductor laser device includes successively forming an active layer and upper cladding layers on a lower cladding layer, etching and removing portions except regions of the upper cladding layers where a current is to flow to form a stripe-shaped ridge structure, and forming a buffer layer comprising Al.sub.x Ga.sub.1-x As having an Al composition ratio x of 0 to 0.3 on a surface of the upper cladding layers exposed by the etching and forming a current blocking layer of first conductivity type Al.sub.y Ga.sub.1-y As having an Al composition ratio y of at least 0.5 on the buffer layer to bury portions of the upper cladding layers which are not removed by the etching process. Therefore, since the layer grown on the upper cladding layer exposed by etching of AlGaAs or GaAs having a low Al composition ratio (0-0.3), three-dimensional growth of and crystalline defects in the buffer layer are suppressed. Current leakage is suppressed, so that a semiconductor laser device having a low threshold current and a high efficiency is fabricated with a stable yield.
摘要翻译：一种制造半导体激光器件的方法包括：在下包层上连续形成有源层和上覆层，蚀刻除去电流流过的上覆层的区域以外的部分，形成条状脊结构，以及在通过蚀刻暴露的上覆层的表面上形成包含Al组成比x为0至0.3的Al x Ga 1-x As的缓冲层，并形成具有Al组成比y的第一导电型AlyGa1-yAs的电流阻挡层在缓冲层上至少为0.5以掩埋未被蚀刻工艺除去的上覆层的部分。因此，由于通过蚀刻Al AlAs或Al组成比低（0-0.3）的GaAs而暴露在上包层上的层，抑制了缓冲层的三维生长和晶体缺陷。电流泄漏被抑制，从而以稳定的产量制造具有低阈值电流和高效率的半导体激光器件。

5. 发明授权

US5800622A Vapor-phase growth apparatus and compound semiconductor device fabricated thereby 失效
标题翻译：由此制造的气相生长装置和化合物半导体器件
公开(公告)号：US5800622A
公开(公告)日：1998-09-01
申请号：US593964
申请日：1996-01-30
申请人： Masayoshi Takemi , Yuji Ohkura
发明人： Masayoshi Takemi , Yuji Ohkura
IPC分类号： C23C16/46 , C30B25/10 , C30B25/14 , H01L21/205 , C23C16/00
CPC分类号： C30B25/14 , C30B25/10 , H01L33/0062
摘要： In a thermal radiation type substrate heating system of an MOCVD growth apparatus, a susceptor includes a semi-circular concavity is formed in each of wafer pockets at the forward area in a wafer rotation direction so that P-richness in a crystalline film grown at the gas upstream area is suppressed. Specifically, the conventional wafer holder exhibits a non-uniform temperature distribution so that the surface temperature is high at the gas upstream area and low at the downstream area. On the other hand, the structure according to the present invention realizes a high temperature at a wafer contact area and a low temperature at a wafer non-contact area, thus leading to a uniform surface temperature over the entire gas upstream and downstream areas.
摘要翻译：在MOCVD生长装置的热辐射型基板加热系统中，基座包括在晶片旋转方向上的前部区域的每个晶片凹槽中形成半圆形凹部，使得在晶片旋转方向上生长的晶体膜的富P浓度天然气上游地区受到抑制。具体地说，传统的晶片保持器表现出不均匀的温度分布，使得表面温度在气体上游区域处较高，而在下游区域处表面温度较低。另一方面，根据本发明的结构在晶片接触区域实现高温，在晶片非接触区域实现低温，从而导致整个气体上游和下游区域的表面温度均匀。

6. 发明授权

US06333946B1 Semiconductor laser device and process for manufacturing the same 失效
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US06333946B1
公开(公告)日：2001-12-25
申请号：US09370911
申请日：1999-08-10
申请人： Motoharu Miyashita , Harumi Nishiguchi , Akihiro Shima , Yuji Ohkura
发明人： Motoharu Miyashita , Harumi Nishiguchi , Akihiro Shima , Yuji Ohkura
IPC分类号： H01S522
CPC分类号： B82Y20/00 , H01S5/2086 , H01S5/2201 , H01S5/2231 , H01S5/3202 , H01S5/3211 , H01S5/3432
摘要： A forward mesa ridge-embedded semiconductor laser device provides a high power output and includes a base portion of a forward mesa ridge having a narrow width to stabilize transverse mode oscillation and an upper cladding layer having a thickness sufficient to reduce loss of the laser beam, a top portion of the forward mesa ridge being interposed between parts of the current blocking layer to reduce the device resistance. The upper cladding layer includes a first cladding layer having the forward mesa ridge and a second cladding layer opposite the first cladding layer. The second cladding layer is deposited over the first cladding layer through the forward mesa ridge and a current blocking layer is positioned on both sides of the forward mesa ridge.
摘要翻译：正向台阶脊嵌入式半导体激光装置提供高功率输出，并且包括具有窄宽度的前台面脊的基部以稳定横模振荡，以及具有足以减少激光束损耗的厚度的上包层，前部台面脊的顶部插入在电流阻挡层的部分之间以减小器件电阻。上包层包括具有前台面脊的第一包层和与第一包层相对的第二包层。第二包层通过前台面脊沉积在第一包层上，并且电流阻挡层位于前台面脊的两侧。

7. 发明授权

US5238785A Method of manufacturing a diffraction grating for a semiconductor laser 失效
$Method of manufacturing a diffraction grating for a semiconductor laser$
标题翻译：制造半导体激光衍射光栅的方法
公开(公告)号：US5238785A
公开(公告)日：1993-08-24
申请号：US568889
申请日：1990-08-17
申请人： Yuji Ohkura , Masatoshi Fujiwara
发明人： Yuji Ohkura , Masatoshi Fujiwara
IPC分类号： G02B5/18 , G03F7/00 , H01L21/308 , H01S5/12
CPC分类号： G02B5/1857 , G03F7/001 , H01L21/3086 , H01S5/12 , H01S5/1215
摘要： A method for manufacturing a diffraction grating includes applying a resist, the developing speed of which has an extreme at a certain exposure intensity, to a substrate on which the diffraction grating is to be formed, performing interference exposure of the resist with maximum and minimum values of exposure intensity respectively larger and smaller than the intensity which makes the developing speed an extreme, developing the resist, and etching the substrate using the remaining resist as a mask.

8. 发明授权

US4847857A Single wavelength semiconductor laser 失效
标题翻译：单波长半导体激光器
公开(公告)号：US4847857A
公开(公告)日：1989-07-11
申请号：US216021
申请日：1988-07-07
申请人： Yuji Ohkura
发明人： Yuji Ohkura
IPC分类号： H01S5/00 , H01S3/06 , H01S3/08 , H01S5/06 , H01S5/10 , H01S5/12 , H01S5/16
CPC分类号： H01S5/16 , H01S5/12 , H01S5/10 , H01S5/1225 , H01S5/124 , H01S5/1243
摘要： In a single wavelength oscillation semiconductor laser having a diffraction grating at the active region, the coupling coefficient between the light and the diffraction grating is low within the laser and high in the neighborhood of the resonator end surface. The amplitude of the diffraction grating is low within the laser and high in the neighborhood of the resonator end surface, or the active layer or the guide layer is thick within the laser and thin in the neighborhood of the resonator end surface. Thus, the laser oscillates at a single wavelength even at high power output operation.
摘要翻译：在有源区域具有衍射光栅的单波长振荡半导体激光器中，光与衍射光栅之间的耦合系数在激光器内较低，在谐振器端面附近较高。衍射光栅的振幅在激光器内低，在谐振器端面附近较高，或者有源层或引导层在激光器内较厚，在谐振器端面附近较薄。因此，即使在高功率输出操作下，激光也以单一波长振荡。

9. 发明授权

US6154476A Semiconductor laser diode 失效
标题翻译：半导体激光二极管
公开(公告)号：US6154476A
公开(公告)日：2000-11-28
申请号：US47386
申请日：1998-03-25
申请人： Harumi Nishiguchi , Yuji Ohkura
发明人： Harumi Nishiguchi , Yuji Ohkura
IPC分类号： H01S5/00 , H01S5/22 , H01S5/223 , H01S5/32 , H01S5/323
CPC分类号： H01S5/32 , H01S5/0287 , H01S5/2206 , H01S5/2231 , H01S5/32316
摘要： A semiconductor laser diode includes a p-type GaAs semiconductor substrate, a p-type region which includes a p-type AlGaAs lower cladding layer, an active layer and an n-type region which includes an n-type AlGaAs upper cladding layer, wherein the n-type AlGaAs upper cladding layer is Al.sub.x Ga.sub.1-x As (x.gtoreq.0.4) having a carrier concentration of no more than 6.times.10.sup.17 cm.sup.-3.
摘要翻译：半导体激光二极管包括p型GaAs半导体衬底，包括p型AlGaAs下包层的p型区，有源层和包括n型AlGaAs上覆层的n型区，其中 n型AlGaAs上覆层是载流子浓度不大于6×10 17 cm -3的Al x Ga 1-x As（x> / = 0.4）。

10. 发明授权

US5706304A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US5706304A
公开(公告)日：1998-01-06
申请号：US603237
申请日：1996-02-20
申请人： Yuji Ohkura
发明人： Yuji Ohkura
IPC分类号： H01S5/00 , H01S5/20 , H01S5/223 , H01S5/32 , H01S5/323 , H01S3/19
CPC分类号： H01S5/20 , H01S5/2231 , H01S5/2004 , H01S5/2081 , H01S5/209 , H01S5/3211 , H01S5/32316
摘要： A semiconductor laser device includes a first conductivity type GaAs substrate; a first conductivity type first lower cladding layer disposed on the GaAs substrate, lattice-matching with the GaAs substrate, and having an energy band gap; a first conductivity type AlGaAs second lower cladding layer disposed on the first lower cladding layer and having an energy band gap larger than the energy band gap of the first lower cladding layer; an active layer disposed on the second lower cladding layer and having an energy band gap smaller than the energy band gap of the first lower cladding layer; a second conductivity type AlGaAs second upper cladding layer disposed on the active layer and having an energy band gap; a second conductivity type first upper cladding layer disposed on the second upper cladding layer, lattice-matching with the GaAs substrate, and having an energy band gap larger than the energy band gap of the active layer and smaller than the energy band gap of the second upper cladding layer; a second conductivity type GaAs contact layer disposed on the first upper cladding layer; and first and second electrodes respectively disposed on the substrate and the contact layer. In this structure, the stress within the crystalline structure of the laser device is reduced and the crystalline defect density is reduced, whereby the reliability of the device is improved.
摘要翻译：半导体激光器件包括第一导电型GaAs衬底; 设置在GaAs衬底上的第一导电类型的第一下包层，与GaAs衬底的晶格匹配，并具有能带隙; 第一导电型AlGaAs第二下包层，其设置在所述第一下包层上并具有比所述第一下包层的能带隙大的能带隙; 有源层，其设置在所述第二下包层上并具有小于所述第一下包层的能带隙的能带隙; 设置在有源层上并具有能带隙的第二导电型AlGaAs第二上包层; 设置在第二上包层上的第二导电类型的第一上包层，与GaAs衬底的晶格匹配，并且具有比有源层的能带隙大的能带隙，并且小于第二上包层的能带隙上覆层; 设置在所述第一上包层上的第二导电型GaAs接触层; 以及分别设置在基板和接触层上的第一和第二电极。在该结构中，激光器件的晶体结构内的应力减小，结晶缺陷密度降低，从而提高了器件的可靠性。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式