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1. 发明授权

US08278014B2 Photomask and pattern formation method using the same 有权
标题翻译：光掩模和图案形成方法使用它
公开(公告)号：US08278014B2
公开(公告)日：2012-10-02
申请号：US13178256
申请日：2011-07-07
申请人： Shigeo Irie , Akio Misaka , Yuji Nonami , Tetsuya Nakamura , Chika Harada
发明人： Shigeo Irie , Akio Misaka , Yuji Nonami , Tetsuya Nakamura , Chika Harada
IPC分类号： G03F1/00 , G03F9/00 , G03F7/00
CPC分类号： G03F1/32 , G03F1/29
摘要： A photomask includes a transparent substrate having a transparent property against exposing light, a semi-light-shielding portion formed on the transparent substrate, a first opening formed in the semi-light-shielding portion and having a first dimension and a second opening formed in the semi-light-shielding portion and having a second dimension lager than the first dimension. A phase-shifting portion which transmits the exposing light in an opposite phase with respect to the first opening is formed on the transparent substrate around the first opening. A light-shielding portion is formed on the transparent substrate around the second opening.
摘要翻译：光掩模包括具有对曝光的透明性的透明基板，形成在透明基板上的半遮光部分，形成在半遮光部分中的第一开口和形成在第一尺寸和第二开口中的第一开口该半光屏蔽部分具有比第一尺寸更大的第二维度。在第一开口周围的透明基板上形成有相对于第一开口以相反相位透过曝光的相移部。在第二开口周围的透明基板上形成遮光部。

2. 发明申请

US20090061330A1 PHOTOMASK AND PATTERN FORMATION METHOD USING THE SAME 有权
标题翻译：使用该图像的光刻胶和图案形成方法
公开(公告)号：US20090061330A1
公开(公告)日：2009-03-05
申请号：US12200478
申请日：2008-08-28
申请人： Shigeo Irie , Akio Misaka , Yuji Nonami , Tetsuya Nakamura , Chika Harada
发明人： Shigeo Irie , Akio Misaka , Yuji Nonami , Tetsuya Nakamura , Chika Harada
IPC分类号： G03F1/00 , G03F7/22
CPC分类号： G03F1/32 , G03F1/29
摘要： A photomask includes a transparent substrate having a transparent property against exposing light, a semi-light-shielding portion formed on the transparent substrate, a first opening formed in the semi-light-shielding portion and having a first dimension and a second opening formed in the semi-light-shielding portion and having a second dimension lager than the first dimension. A phase-shifting portion which transmits the exposing light in an opposite phase with respect to the first opening is formed on the transparent substrate around the first opening. A light-shielding portion is formed on the transparent substrate around the second opening.
摘要翻译：光掩模包括具有对曝光的透明性的透明基板，形成在透明基板上的半遮光部分，形成在半遮光部分中的第一开口和形成在第一尺寸和第二开口中的第一开口该半光屏蔽部分具有比第一尺寸更大的第二维度。在第一开口周围的透明基板上形成有相对于第一开口以相反相位透过曝光的相移部。在第二开口周围的透明基板上形成遮光部。

3. 发明授权

US08007959B2 Photomask and pattern formation method using the same 有权
标题翻译：光掩模和图案形成方法使用它
公开(公告)号：US08007959B2
公开(公告)日：2011-08-30
申请号：US12181650
申请日：2008-07-29
申请人： Yuji Nonami , Akio Misaka , Shigeo Irie
发明人： Yuji Nonami , Akio Misaka , Shigeo Irie
IPC分类号： G03F1/00 , G03F9/00 , H01L21/00
CPC分类号： G03F1/36 , G03F1/32
摘要： A photomask includes a transparent substrate having a transparent property against exposing light and a halftone portion formed on the transparent substrate. In the halftone portion, a first opening having a first dimension and a second opening having a second dimension larger than the first dimension are formed. A light-shielding portion is formed on the transparent substrate to be disposed around the second opening.
摘要翻译：光掩模包括具有不透光的透明性的基板和形成在透明基板上的半色调部分。在半色调部分中，形成具有第一尺寸的第一开口和具有大于第一尺寸的第二尺寸的第二开口。在透明基板上形成遮光部，配置在第二开口周围。

4. 发明授权

US07998641B2 Photomask and pattern formation method using the same 有权
标题翻译：光掩模和图案形成方法使用它
公开(公告)号：US07998641B2
公开(公告)日：2011-08-16
申请号：US12200478
申请日：2008-08-28
申请人： Shigeo Irie , Akio Misaka , Yuji Nonami , Tetsuya Nakamura , Chika Harada
发明人： Shigeo Irie , Akio Misaka , Yuji Nonami , Tetsuya Nakamura , Chika Harada
IPC分类号： G03F1/00 , G03F9/00 , G03F7/00
CPC分类号： G03F1/32 , G03F1/29
摘要： A photomask includes a transparent substrate having a transparent property against exposing light, a semi-light-shielding portion formed on the transparent substrate, a first opening formed in the semi-light-shielding portion and having a first dimension and a second opening formed in the semi-light-shielding portion and having a second dimension lager than the first dimension. A phase-shifting portion which transmits the exposing light in an opposite phase with respect to the first opening is formed on the transparent substrate around the first opening. A light-shielding portion is formed on the transparent substrate around the second opening.
摘要翻译：光掩模包括具有对曝光的透明性的透明基板，形成在透明基板上的半遮光部分，形成在半遮光部分中的第一开口和形成在第一尺寸和第二开口中的第一开口该半光屏蔽部分具有比第一尺寸更大的第二维度。在第一开口周围的透明基板上形成有相对于第一开口以相反相位透过曝光的相移部。在第二开口周围的透明基板上形成遮光部。

5. 发明申请

US20090061328A1 PHOTOMASK AND PATTERN FORMATION METHOD USING THE SAME 有权
标题翻译：使用该图像的光刻胶和图案形成方法
公开(公告)号：US20090061328A1
公开(公告)日：2009-03-05
申请号：US12181650
申请日：2008-07-29
申请人： Yuji NONAMI , Akio Misaka , Shigeo Irie
发明人： Yuji NONAMI , Akio Misaka , Shigeo Irie
IPC分类号： G03F1/00 , G03F7/22
CPC分类号： G03F1/36 , G03F1/32
摘要： A photomask includes a transparent substrate having a transparent property against exposing light and a halftone portion formed on the transparent substrate. In the halftone portion, a first opening having a first dimension and a second opening having a second dimension larger than the first dimension are formed. A light-shielding portion is formed on the transparent substrate to be disposed around the second opening.
摘要翻译：光掩模包括具有不透光的透明性的基板和形成在透明基板上的半色调部分。在半色调部分中，形成具有第一尺寸的第一开口和具有大于第一尺寸的第二尺寸的第二开口。在透明基板上形成遮光部，配置在第二开口周围。

6. 发明授权

US06500550B1 Resin-composite aluminum profiles, heat insulating aluminum profiles, and method and apparatus for production thereof 有权
标题翻译：树脂复合铝型材，绝热铝型材及其制造方法和装置
公开(公告)号：US06500550B1
公开(公告)日：2002-12-31
申请号：US09630707
申请日：2000-08-01
申请人： Masatake Tsuboi , Masaki Wakabayashi , Norio Shioda , Shigeo Irie , Masaaki Iwakura , Toshiyuki Shoji
发明人： Masatake Tsuboi , Masaki Wakabayashi , Norio Shioda , Shigeo Irie , Masaaki Iwakura , Toshiyuki Shoji
IPC分类号： B32B1508
CPC分类号： B29C44/129 , B29C39/18 , B29C44/1228 , B29C44/388 , B29C59/103 , B29L2031/005 , E06B3/267 , Y10T428/31605 , Y10T428/31678 , Y10T428/31681 , Y10T428/31699
摘要： A method is disclosed for producing a resin-composite profile. The method comprises providing an aluminum profile having a coating film that is capable of forming a functional group which reacts with isocyanate. A discharge treatment is performed on the film wherein the treated surface is capable of reacting with isocyanate. A urethane resin substantially formed of isocyanates and polyol is joined to the discharge treated surface.
摘要翻译：公开了一种用于制备树脂 - 复合材料轮廓的方法。该方法包括提供具有能够形成与异氰酸酯反应的官能团的涂膜的铝型材。在其上处理的表面能够与异氰酸酯反应的膜上进行放电处理。基本上由异氰酸酯和多元醇形成的聚氨酯树脂与放电处理表面接合。

7. 发明授权

US06984472B2 Exposure method and apparatus 失效
标题翻译：曝光方法和装置
公开(公告)号：US06984472B2
公开(公告)日：2006-01-10
申请号：US09891213
申请日：2001-06-26
申请人： Shigeo Irie
发明人： Shigeo Irie
IPC分类号： G03F9/00 , H01L21/00
CPC分类号： G03F1/24 , G03F1/82 , G03F7/70925 , G03F7/70941
摘要： An unwanted deposited film is removed from the surface of a photomask in which a desired pattern has been formed. Then, a resist film is exposed to extreme ultraviolet radiation through the photomask, from which the deposited film has been removed, thereby transferring the desired pattern onto the resist film.
摘要翻译：从其中已经形成所需图案的光掩模的表面去除不想要的沉积膜。然后，通过光掩模将抗蚀剂膜暴露于极紫外线辐射下，从其中去除沉积膜，从而将期望的图案转印到抗蚀剂膜上。

8. 发明授权

US06855485B2 Pattern forming method and apparatus for fabricating semiconductor device 失效
公开(公告)号：US06855485B2
公开(公告)日：2005-02-15
申请号：US09891192
申请日：2001-06-26
申请人： Shigeo Irie
发明人： Shigeo Irie
IPC分类号： G03F7/039 , G03F7/16 , G03F7/20 , G03F7/26 , G03F7/36 , G03F7/38 , H01L21/027 , G03C5/00
CPC分类号： G03F7/38 , G03F7/168 , G03F7/265
摘要： A resist film is formed out of a resist material on a substrate, and then pre-baked. Next, the pre-baked resist film is exposed to extreme ultraviolet radiation through a photomask. Then, the exposed resist film is developed, thereby defining a resist pattern on the substrate. The pre-baking and exposing steps are carried out in a vacuum without subjecting the resist film to the air.

9. 发明授权

US06966710B2 Pattern forming method and apparatus for fabricating semiconductor device 失效
标题翻译：用于制造半导体器件的图案形成方法和装置
公开(公告)号：US06966710B2
公开(公告)日：2005-11-22
申请号：US10847301
申请日：2004-05-18
申请人： Shigeo Irie
发明人： Shigeo Irie
IPC分类号： G03F7/039 , G03F7/16 , G03F7/20 , G03F7/26 , G03F7/36 , G03F7/38 , H01L21/027 , G03D5/00 , G03B27/32 , G03B27/54
CPC分类号： G03F7/38 , G03F7/168 , G03F7/265
摘要： A resist film is formed out of a resist material on a substrate, and then pre-baked. Next, the pre-baked resist film is exposed to extreme ultraviolet radiation through a photomask. Then, the exposed resist film is developed, thereby defining a resist pattern on the substrate. The pre-baking and exposing steps are carried out in a vacuum without subjecting the resist film to the air.
摘要翻译：在基板上由抗蚀剂材料形成抗蚀剂膜，然后预烘烤。接下来，预烘烤的抗蚀剂膜通过光掩模暴露于极紫外辐射。然后，曝光的抗蚀剂膜被显影，从而在衬底上限定抗蚀剂图案。预烘烤和曝光步骤在真空中进行，而不使抗蚀剂膜受到空气。

10. 发明授权

US06677108B2 Method for light exposure 失效
标题翻译：曝光方法
公开(公告)号：US06677108B2
公开(公告)日：2004-01-13
申请号：US09907345
申请日：2001-07-17
申请人： Nobuyuki Matsuzawa , Shigeo Irie
发明人： Nobuyuki Matsuzawa , Shigeo Irie
IPC分类号： G03C556
CPC分类号： G03F7/2039 , G03F7/2004 , Y10S430/167 , Y10S430/168
摘要： A light exposure method in which, when a resist layer is selectively exposed to one of X-rays containing soft X-rays, vacuum ultraviolet light rays and ultraviolet rays containing extreme ultraviolet light rays for patterning the resist layer to a pre-set shape, a high molecular material having pre-set oxygen content ratio (no) and density (&rgr;) is applied to form a resist layer having a film thickness not less than 250 nm. Since the high molecular material having the pre-set oxygen content ratio (no) and density (&rgr;) is used, a resist pattern of a better shape may be obtained even if the resist layer is of an increased thickness of not less than 250 nm. Since the film thickness of the resist layer is not less than 250 nm, it is possible to construct a lithographic process superior in etching resistance to realize ultra-fine machining than was heretofore possible.
摘要翻译：一种曝光方法，其中当将抗蚀剂层选择性地暴露于含有软X射线的X射线之一，真空紫外光线和包含用于将抗蚀剂层图案化为预定形状的极紫外光的紫外线时，施加具有预设氧含量比（No）和密度（rho））的高分子材料以形成膜厚度不小于250nm的抗蚀剂层。由于使用具有预设氧含量比（no）和密度（rho）的高分子材料，因此即使抗蚀剂层的厚度增加到不小于250nm，也可以获得更好形状的抗蚀剂图案。由于抗蚀剂层的膜厚度不小于250nm，因此可以构造抗蚀性优异的平版印刷工艺，以实现超细加工。

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