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    • 1. 发明授权
    • Disk cartridge with write protect mechanism
    • 磁盘盒带写保护机制
    • US5150269A
    • 1992-09-22
    • US609592
    • 1990-11-06
    • Yuji IwakiMasanori Funayama
    • Yuji IwakiMasanori Funayama
    • G11B19/04G11B19/16G11B23/03G11B23/28
    • G11B23/287G11B19/04G11B19/16G11B23/0303
    • A disk cartridge with a write protect mechanism includes a cassette casing in which a disk is rotatably housed. The cassette casing includes upper and lower halves. The upper half includes a planar wall and a standing peripheral wall, and the lower half also includes a corresponding planar wall and a corresponding standing peripheral wall. The cassette casing is formed by facing the standing peripheral walls and firmly securing them to each other. A housing space is provided in the cassette casing for slidably receiving a manually operable switching member of the write protect mechanism therein. An inlet is provided at the standing peripheral walls of the upper and lower halves for communicating the housing space with an outside of the cassette casing therethrough. The manually operable switching member is inserted into the housing space through the inlet provided at the standing peripheral walls.
    • 具有写保护机构的盘盒包括:盒壳,其中可旋转地容纳盘。 盒式外壳包括上半部和下半部。 上半部包括平面壁和立体周壁,下半部还包括对应的平面壁和对应的立式周边壁。 盒式壳体通过面对立起的周壁形成并将它们牢固地固定在一起。 在盒壳体中设置有容纳空间,用于可滑动地接收其中的写保护机构的可手动切换构件。 入口设置在上半部和下半部的站立的周壁处,用于将容纳空间与盒壳体的外部连通。 手动操作的切换构件通过设置在立式周边壁处的入口插入到容纳空间中。
    • 7. 发明授权
    • Method for manufacturing semiconductor wafer
    • 制造半导体晶片的方法
    • US07829434B2
    • 2010-11-09
    • US12210304
    • 2008-09-15
    • Shunpei YamazakiAkiharu MiyanagaKo InadaYuji Iwaki
    • Shunpei YamazakiAkiharu MiyanagaKo InadaYuji Iwaki
    • H01L21/762
    • H01L21/76254H01L21/2236H01L21/26506
    • To provide a method for manufacturing an SOI substrate having a single crystal semiconductor layer having a small and uniform thickness over an insulating film. Further, time of adding hydrogen ions is reduced and time of manufacture per SOI substrate is reduced. A bond layer is formed over a surface of a first semiconductor wafer and a separation layer is formed below the bond layer by irradiating the first semiconductor wafer with H3+ ions by an ion doping apparatus. H3+ ions accelerated by high voltage are separated to be three H+ ions at a semiconductor wafer surface, and the H+ ions cannot enter deeply. Therefore, H+ ions are added into a shallower region in the semiconductor wafer at a higher concentration than the case of using a conventional ion implantation method.
    • 提供一种制造具有在绝缘膜上具有小而均匀厚度的单晶半导体层的SOI衬底的方法。 此外,加入氢离子的时间减少,并且每个SOI衬底的制造时间减少。 在第一半导体晶片的表面上形成接合层,并且通过用离子掺杂装置用H3 +离子照射第一半导体晶片,在接合层的下方形成分离层。 通过高压加速的H3 +离子在半导体晶片表面被分离为三个H +离子,并且H +离子不能深入。 因此,与使用常规的离子注入方法的情况相比,将H +离子加入到半导体晶片的较浅的区域中。