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1. 发明授权

US07829434B2 Method for manufacturing semiconductor wafer 有权
标题翻译：制造半导体晶片的方法
公开(公告)号：US07829434B2
公开(公告)日：2010-11-09
申请号：US12210304
申请日：2008-09-15
申请人： Shunpei Yamazaki , Akiharu Miyanaga , Ko Inada , Yuji Iwaki
发明人： Shunpei Yamazaki , Akiharu Miyanaga , Ko Inada , Yuji Iwaki
IPC分类号： H01L21/762
CPC分类号： H01L21/76254 , H01L21/2236 , H01L21/26506
摘要： To provide a method for manufacturing an SOI substrate having a single crystal semiconductor layer having a small and uniform thickness over an insulating film. Further, time of adding hydrogen ions is reduced and time of manufacture per SOI substrate is reduced. A bond layer is formed over a surface of a first semiconductor wafer and a separation layer is formed below the bond layer by irradiating the first semiconductor wafer with H3+ ions by an ion doping apparatus. H3+ ions accelerated by high voltage are separated to be three H+ ions at a semiconductor wafer surface, and the H+ ions cannot enter deeply. Therefore, H+ ions are added into a shallower region in the semiconductor wafer at a higher concentration than the case of using a conventional ion implantation method.
摘要翻译：提供一种制造具有在绝缘膜上具有小而均匀厚度的单晶半导体层的SOI衬底的方法。此外，加入氢离子的时间减少，并且每个SOI衬底的制造时间减少。在第一半导体晶片的表面上形成接合层，并且通过用离子掺杂装置用H3 +离子照射第一半导体晶片，在接合层的下方形成分离层。通过高压加速的H3 +离子在半导体晶片表面被分离为三个H +离子，并且H +离子不能深入。因此，与使用常规的离子注入方法的情况相比，将H +离子加入到半导体晶片的较浅的区域中。

2. 发明授权

US08043939B2 Method for manufacturing semiconductor wafer 有权
标题翻译：制造半导体晶片的方法
公开(公告)号：US08043939B2
公开(公告)日：2011-10-25
申请号：US12862197
申请日：2010-08-24
申请人： Shunpei Yamazaki , Akiharu Miyanaga , Ko Inada , Yuji Iwaki
发明人： Shunpei Yamazaki , Akiharu Miyanaga , Ko Inada , Yuji Iwaki
IPC分类号： H01L21/762
CPC分类号： H01L21/76254 , H01L21/2236 , H01L21/26506
摘要： To provide a method for manufacturing an SOI substrate having a single crystal semiconductor layer having a small and uniform thickness over an insulating film. Further, time of adding hydrogen ions is reduced and time of manufacture per SOI substrate is reduced. A bond layer is formed over a surface of a first semiconductor wafer and a separation layer is formed below the bond layer by irradiating the first semiconductor wafer with H3+ ions by an ion doping apparatus. H3+ ions accelerated by high voltage are separated to be three H+ ions at a semiconductor wafer surface, and the H+ ions cannot enter deeply. Therefore, H+ ions are added into a shallower region in the semiconductor wafer at a higher concentration than the case of using a conventional ion implantation method.
摘要翻译：提供一种制造具有在绝缘膜上具有小而均匀厚度的单晶半导体层的SOI衬底的方法。此外，加入氢离子的时间减少，并且每个SOI衬底的制造时间减少。在第一半导体晶片的表面上形成接合层，并且通过用离子掺杂装置用H3 +离子照射第一半导体晶片，在接合层的下方形成分离层。通过高压加速的H3 +离子在半导体晶片表面被分离为三个H +离子，并且H +离子不能深入。因此，与使用常规的离子注入方法的情况相比，将H +离子加入到半导体晶片的较浅的区域中。

3. 发明申请

US20090081849A1 METHOD FOR MANUFACTURING SEMICONDUCTOR WAFER 有权
标题翻译：制造半导体波形的方法
公开(公告)号：US20090081849A1
公开(公告)日：2009-03-26
申请号：US12210304
申请日：2008-09-15
申请人： Shunpei Yamazaki , Akiharu Miyanaga , Ko Inada , Yuji Iwaki
发明人： Shunpei Yamazaki , Akiharu Miyanaga , Ko Inada , Yuji Iwaki
IPC分类号： H01L21/762
CPC分类号： H01L21/76254 , H01L21/2236 , H01L21/26506
摘要： To provide a method for manufacturing an SOI substrate having a single crystal semiconductor layer having a small and uniform thickness over an insulating film. Further, time of adding hydrogen ions is reduced and time of manufacture per SOI substrate is reduced. A bond layer is formed over a surface of a first semiconductor wafer and a separation layer is formed below the bond layer by irradiating the first semiconductor wafer with H3+ ions by an ion doping apparatus. H3+ ions accelerated by high voltage are separated to be three H+ ions at a semiconductor wafer surface, and the H+ ions cannot enter deeply. Therefore, H+ ions are added into a shallower region in the semiconductor wafer at a higher concentration than the case of using a conventional ion implantation method.
摘要翻译：提供一种制造具有在绝缘膜上具有小而均匀厚度的单晶半导体层的SOI衬底的方法。此外，加入氢离子的时间减少，并且每个SOI衬底的制造时间减少。在第一半导体晶片的表面上形成接合层，并且通过用离子掺杂装置用H3 +离子照射第一半导体晶片，在接合层的下方形成分离层。通过高压加速的H3 +离子在半导体晶片表面被分离为三个H +离子，并且H +离子不能深入。因此，与使用常规的离子注入方法的情况相比，将H +离子加入到半导体晶片的较浅的区域中。

4. 发明授权

US08227802B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08227802B2
公开(公告)日：2012-07-24
申请号：US12847352
申请日：2010-07-30
申请人： Hiroko Abe , Yuji Iwaki , Mikio Yukawa , Shunpei Yamazaki , Yasuyuki Arai , Yasuko Watanabe , Yoshitaka Moriya
发明人： Hiroko Abe , Yuji Iwaki , Mikio Yukawa , Shunpei Yamazaki , Yasuyuki Arai , Yasuko Watanabe , Yoshitaka Moriya
IPC分类号： H01L35/24
CPC分类号： H01L51/0579 , B82Y10/00 , G11C13/0014 , G11C13/04 , H01L27/112 , H01L27/115 , H01L51/0051 , H01L51/0059
摘要： It is an object of the present invention to provide a semiconductor device in which data can be written except when manufacturing the semiconductor device and that counterfeits can be prevented. Moreover, it is another object of the invention to provide an inexpensive semiconductor device including a memory having a simple structure. The semiconductor device includes a field effect transistor formed over a single crystal semiconductor substrate, a first conductive layer formed over the field effect transistor, an organic compound layer formed over the first conductive layer, and a second conductive layer formed over the organic compound layer, and a memory element includes the first conductive layer, the organic compound, and the second conductive layer. According to the above structure, a semiconductor device which can conduct non-contact transmission/reception of data can be provided by possessing an antenna.
摘要翻译：本发明的目的是提供一种其中可以写入数据的半导体器件，除了制造半导体器件并且可以防止伪造的情况下。此外，本发明的另一个目的是提供一种廉价的半导体器件，其包括具有简单结构的存储器。半导体器件包括形成在单晶半导体衬底上的场效应晶体管，形成在场效应晶体管上的第一导电层，形成在第一导电层上的有机化合物层，以及形成在有机化合物层上的第二导电层，并且存储元件包括第一导电层，有机化合物和第二导电层。根据上述结构，可以通过拥有天线来提供可以进行数据的非接触式发送/接收的半导体器件。

5. 发明授权

US08223531B2 Semiconductor device and driving method of the same 有权
标题翻译：半导体装置及其驱动方法
公开(公告)号：US08223531B2
公开(公告)日：2012-07-17
申请号：US13151299
申请日：2011-06-02
申请人： Ryoji Nomura , Hiroko Abe , Yuji Iwaki , Shunpei Yamazaki
发明人： Ryoji Nomura , Hiroko Abe , Yuji Iwaki , Shunpei Yamazaki
IPC分类号： G11C7/10
CPC分类号： G11C16/22 , B82Y10/00 , G11C13/0014 , G11C13/0059 , G11C13/04 , G11C17/16 , G11C2213/77 , G11C2213/79 , H01L27/285 , H01L51/0051 , H01L51/0059
摘要： The present invention provides a semiconductor device including a memory that has a memory cell array including a plurality of memory cells, a control circuit that controls the memory, and an antenna, where the memory cell array has a plurality of bit lines extending in a first direction and a plurality of word lines extending in a second direction different from the first direction, and each of the plurality of memory cells has an organic compound layer provided between the bit line and the word line. Data is written by applying optical or electric action to the organic compound layer.
摘要翻译：本发明提供了一种半导体器件，其包括具有包括多个存储单元的存储单元阵列的存储器，控制存储器的控制电路和天线，其中存储单元阵列具有在第一方向和沿与第一方向不同的第二方向延伸的多个字线，并且多个存储单元中的每一个具有设置在位线和字线之间的有机化合物层。通过向有机化合物层施加光学或电动作来写入数据。

6. 发明授权

US09734901B2 Display device with semiconductor memory cell 有权
公开(公告)号：US09734901B2
公开(公告)日：2017-08-15
申请号：US11249767
申请日：2005-10-14
申请人： Yasuko Watanabe , Yasuyuki Arai , Hiroko Abe , Yuji Iwaki , Mikio Yukawa , Shunpei Yamazaki
发明人： Yasuko Watanabe , Yasuyuki Arai , Hiroko Abe , Yuji Iwaki , Mikio Yukawa , Shunpei Yamazaki
IPC分类号： G09G3/3225 , G09G3/3216 , G11C13/00 , B82Y10/00 , G09G3/36
CPC分类号： G11C13/0014 , B82Y10/00 , G09G3/3216 , G09G3/3225 , G09G3/3648 , G09G2310/0251 , G11C13/0016
摘要： The present invention provides a display device including a nonvolatile memory circuit to which data can be added without increasing the number of manufacturing steps, and an electronic appliance using the display device. A display device of the present invention has a memory circuit that includes a memory element with a simple structure in which an organic compound layer is interposed between a pair of conductive layers. According to the present invention having the above mentioned structure, a display device having a nonvolatile memory circuit to which data can be added can be provided without increasing the number of manufacturing steps.

7. 发明授权

US07795617B2 Semiconductor device, IC card, IC tag, RFID, transponder, paper money, valuable securities, passport, electronic device, bag, and clothes 有权
标题翻译：半导体器件，IC卡，IC标签，RFID，应答器，纸币，有价值的证券，护照，电子设备，袋子和衣服
公开(公告)号：US07795617B2
公开(公告)日：2010-09-14
申请号：US11256267
申请日：2005-10-24
申请人： Jun Koyama , Hiroko Abe , Mikio Yukawa , Yuji Iwaki , Shunpei Yamazaki
发明人： Jun Koyama , Hiroko Abe , Mikio Yukawa , Yuji Iwaki , Shunpei Yamazaki
IPC分类号： H01L29/04 , H01L29/10 , H01L31/00
CPC分类号： H01L27/285 , B82Y10/00 , G11C13/0014 , G11C13/0059 , H01L28/10
摘要： It is an object to provide a semiconductor device the data writing of which can be performed except in manufacturing and the counterfeiting of which by rewriting can be prevented. Furthermore, it is another object of the invention to provide a semiconductor device constituted by an organic memory having a simple structure at low cost. A memory cell is constituted by connecting a transistor in parallel or series to an organic element having an organic compound layer, and each memory cell is connected in series or parallel to constitute a NAND memory or a NOR memory. The organic element can change its electrical property irreversibly by application of a current or a voltage, irradiation of light, or the like.
摘要翻译：本发明的目的是提供一种半导体器件，除了制造之外，可以执行其数据写入，并且可以防止通过重写的伪造的伪造的半导体器件。此外，本发明的另一个目的是提供一种由具有简单结构的有机存储器以低成本构成的半导体器件。存储单元通过将具有有机化合物层的有机元件并联或串联连接的晶体管构成，并且每个存储单元串联或并联连接以构成NAND存储器或NOR存储器。有机元素可以通过施加电流或电压，光的照射等而不可逆地改变其电性质。

8. 发明授权

US07499305B2 Semiconductor device and driving method of the same 有权
标题翻译：半导体装置及其驱动方法
公开(公告)号：US07499305B2
公开(公告)日：2009-03-03
申请号：US11547304
申请日：2005-10-12
申请人： Ryoji Nomura , Hiroko Abe , Yuji Iwaki , Shunpei Yamazaki
发明人： Ryoji Nomura , Hiroko Abe , Yuji Iwaki , Shunpei Yamazaki
IPC分类号： G11C11/00
CPC分类号： G11C16/22 , B82Y10/00 , G11C13/0014 , G11C13/0059 , G11C13/04 , G11C17/16 , G11C2213/77 , G11C2213/79 , H01L27/285 , H01L51/0051 , H01L51/0059
摘要： The present invention provides a semiconductor device including a memory that has a memory cell array including a plurality of memory cells, a control circuit that controls the memory, and an antenna, where the memory cell array has a plurality of bit lines extending in a first direction and a plurality of word lines extending in a second direction different from the first direction, and each of the plurality of memory cells has an organic compound layer provided between the bit line and the word line. Data is written by applying optical or electric action to the organic compound layer.
摘要翻译：本发明提供了一种半导体器件，其包括具有包括多个存储单元的存储单元阵列的存储器，控制存储器的控制电路和天线，其中存储单元阵列具有在第一方向和沿与第一方向不同的第二方向延伸的多个字线，并且多个存储单元中的每一个具有设置在位线和字线之间的有机化合物层。通过向有机化合物层施加光学或电动作来写入数据。

9. 发明申请

US20080136325A1 Composite Material, Light Emitting Element, Light Emitting Device and Electronic Appliance Using the Composite Material 有权
标题翻译：复合材料，发光元件，发光元件和电子电器
公开(公告)号：US20080136325A1
公开(公告)日：2008-06-12
申请号：US11884548
申请日：2006-02-21
申请人： Shunpei Yamazaki , Hisao Ikeda , Satoshi Seo , Junichiro Sakata , Yuji Iwaki
发明人： Shunpei Yamazaki , Hisao Ikeda , Satoshi Seo , Junichiro Sakata , Yuji Iwaki
IPC分类号： H01J1/62 , C09K11/06
CPC分类号： H01L51/5278 , C09K11/06 , C09K2211/1007 , C09K2211/1014 , C09K2211/186 , H01L51/0059 , H01L51/0077 , H01L51/0081 , H01L51/0085 , H01L51/5048 , H01L2251/305 , H01L2251/308 , H01L2251/5315 , H01L2251/5323 , H05B33/14
摘要： A composite material includes an organic compound represented by the following general formula (1) and an inorganic compound, where, in the general formula (1), R1 to R24 is identical to or different from one another, and represent any of hydrogen, an alkyl group, an alkoxy group, an aryl group, and an arylalkyl group. A light emitting element includes the composite material and a light emitting device and an electronic appliance includes the light emitting element. The composite material has an excellent carrier transporting property and an excellent carrier injecting property with respect to the organic compound along with high visible light transmittance. By utilizing the composite material, a current excitation type light emitting element requiring low driving voltage and having excellent light emitting efficiency is obtained. By using the light emitting element, a light emitting device consuming low power and an electronic appliance including the light emitting device is provided.
摘要翻译：复合材料包括由以下通式（1）表示的有机化合物和无机化合物，其中在通式（1）中，R 1至R 24 彼此相同或不同，并且表示氢，烷基，烷氧基，芳基和芳烷基中的任一个。发光元件包括复合材料，发光器件和电子器件包括发光元件。该复合材料具有优异的载流子传输性能和相对于有机化合物的优异载流子注入性以及高可见光透射率。通过利用复合材料，可以获得需要低驱动电压且发光效率优异的电流激励型发光元件。通过使用发光元件，提供消耗低功率的发光器件和包括发光器件的电子器件。

10. 发明申请

US20060102919A1 Display device and electronic appliance using the same 有权
标题翻译：显示设备和使用该设备的电子设备
公开(公告)号：US20060102919A1
公开(公告)日：2006-05-18
申请号：US11249767
申请日：2005-10-14
申请人： Yasuko Watanabe , Yasuyuki Arai , Hiroko Abe , Yuji Iwaki , Mikio Yukawa , Shunpei Yamazaki
发明人： Yasuko Watanabe , Yasuyuki Arai , Hiroko Abe , Yuji Iwaki , Mikio Yukawa , Shunpei Yamazaki
IPC分类号： H01L33/00
CPC分类号： G11C13/0014 , B82Y10/00 , G09G3/3216 , G09G3/3225 , G09G3/3648 , G09G2310/0251 , G11C13/0016
摘要： The present invention provides a display device including a nonvolatile memory circuit to which data can be added without increasing the number of manufacturing steps, and an electronic appliance using the display device. A display device of the present invention has a memory circuit that includes a memory element with a simple structure in which an organic compound layer is interposed between a pair of conductive layers. According to the present invention having the above mentioned structure, a display device having a nonvolatile memory circuit to which data can be added can be provided without increasing the number of manufacturing steps.
摘要翻译：本发明提供了一种显示装置，包括：不增加数量的制造步骤可以添加数据的非易失性存储器电路;以及使用该显示装置的电子设备。本发明的显示装置具有包括具有简单结构的存储元件的存储电路，其中有机化合物层插在一对导电层之间。根据具有上述结构的本发明，可以提供具有能够添加数据的非易失性存储电路的显示装置，而不增加制造步骤的数量。

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