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    • 1. 发明授权
    • Method of producing thin film magnetic head
    • 制造薄膜磁头的方法
    • US07828985B2
    • 2010-11-09
    • US11892773
    • 2007-08-27
    • Yuji ItoHiraku HirabayashiYoshiyuki MizoguchiNobuya Oyama
    • Yuji ItoHiraku HirabayashiYoshiyuki MizoguchiNobuya Oyama
    • C23F1/00B44C1/22H01L21/00H01L21/302
    • G11B5/3163G11B5/00826
    • A method of producing a thin film magnetic head includes the steps of: forming a second lower magnetic pole layer in a part on a first lower magnetic pole layer; forming, over the entire wafer surface, an insulating layer so as to be thicker than the thickness of the second lower magnetic pole layer in the stacking direction, the insulating layer being less likely to be etched than the second lower magnetic pole layer; carrying out a planarizing process by CMP on the entire wafer surface until the second lower magnetic pole layer is exposed; forming a concave portion including the second lower magnetic pole layer and the insulating layer by ion beam etching on the entire wafer surface; forming a recording gap layer over the entire wafer surface; and forming a first upper magnetic pole layer in the upper magnetic pole layer so as to fill the concave portion.
    • 一种制造薄膜磁头的方法包括以下步骤:在第一下磁极层的一部分上形成第二下磁极层; 在整个晶片表面上形成绝缘层,以便比层叠方向上的第二下磁极层的厚度厚,绝缘层比第二下磁极层更不易蚀刻; 在整个晶片表面上通过CMP进行平坦化处理,直到第二下磁极层露出; 在整个晶片表面上通过离子束蚀刻形成包括第二下磁极层和绝缘层的凹部; 在整个晶片表面上形成记录间隙层; 以及在所述上磁极层中形成第一上磁极层以填充所述凹部。
    • 2. 发明申请
    • Method of producing thin film magnetic head
    • 制造薄膜磁头的方法
    • US20080087630A1
    • 2008-04-17
    • US11892773
    • 2007-08-27
    • Yuji ItoHiraku HirabayashiYoshiyuki MizoguchiNobuya Oyama
    • Yuji ItoHiraku HirabayashiYoshiyuki MizoguchiNobuya Oyama
    • B44C1/22
    • G11B5/3163G11B5/00826
    • A method of producing a thin film magnetic head includes the steps of: forming a second lower magnetic pole layer in a part on a first lower magnetic pole layer; forming, over the entire wafer surface, an insulating layer so as to be thicker than the thickness of the second lower magnetic pole layer in the stacking direction, the insulating layer being less likely to be etched than the second lower magnetic pole layer; carrying out a planarizing process by CMP on the entire wafer surface until the second lower magnetic pole layer is exposed; forming a concave portion including the second lower magnetic pole layer and the insulating layer by ion beam etching on the entire wafer surface; forming a recording gap layer over the entire wafer surface; and forming a first upper magnetic pole layer in the upper magnetic pole layer so as to fill the concave portion.
    • 一种制造薄膜磁头的方法包括以下步骤:在第一下磁极层的一部分上形成第二下磁极层; 在整个晶片表面上形成绝缘层,以便比层叠方向上的第二下磁极层的厚度厚,绝缘层比第二下磁极层更不易蚀刻; 在整个晶片表面上通过CMP进行平坦化处理,直到第二下磁极层露出; 在整个晶片表面上通过离子束蚀刻形成包括第二下磁极层和绝缘层的凹部; 在整个晶片表面上形成记录间隙层; 以及在所述上磁极层中形成第一上磁极层以填充所述凹部。
    • 7. 发明申请
    • Method of manufacturing thin-film magnetic head and thin-film magnetic head
    • 制造薄膜磁头和薄膜磁头的方法
    • US20080094751A1
    • 2008-04-24
    • US11907910
    • 2007-10-18
    • Hiraku HirabayashiYoshiyuki Mizoguchi
    • Hiraku HirabayashiYoshiyuki Mizoguchi
    • G11B15/60G11B5/127
    • G11B5/3163G11B5/3116Y10T29/49046Y10T29/49048Y10T29/49052
    • A method of forming a thin-film magnetic head comprises a lower magnetic pole layer forming step of forming a lower magnetic pole layer; a lower magnetic pole projection forming step of forming the lower magnetic pole layer with a lower magnetic pole projection; a gap layer forming step of laminating a nonmagnetic gap layer on the lower magnetic pole projection; and an upper magnetic pole forming step of forming an upper magnetic pole on the nonmagnetic gap layer. The lower magnetic pole projection forming step forms the lower magnetic pole projection by simultaneously etching an area including parts adjacent to a part to become the lower magnetic pole projection on both sides in a track width direction and a part adjacent to the part to become the lower magnetic pole projection on the side opposite from a medium-opposing surface in a surface of the lower magnetic pole layer.
    • 形成薄膜磁头的方法包括形成下磁极层的下磁极层形成步骤; 下磁极突起形成步骤,用下磁极突起形成下磁极层; 间隙层形成步骤,在所述下磁极突起上层叠非磁性间隙层; 以及在非磁性间隙层上形成上部磁极的上部磁极形成工序。 下磁极投影形成步骤通过同时蚀刻包括与一部分相邻的部分的区域来形成下磁极突起,以在轨道宽度方向上的两侧成为下部磁极突起,并且与该部分相邻的部分成为下部磁极突起 磁极突起在与下磁极层的表面中的与介质相对的表面相对的一侧上。
    • 8. 发明授权
    • Magnetic sensor having magneto-resistive elements on a substrate
    • 磁传感器在基片上具有磁阻元件
    • US08451003B2
    • 2013-05-28
    • US12844091
    • 2010-07-27
    • Hiroshi YamazakiHiraku HirabayashiNaoki Ohta
    • Hiroshi YamazakiHiraku HirabayashiNaoki Ohta
    • G01R33/09
    • G01R33/091G01D5/145
    • A magnetic sensor having first to fourth magneto-resistive elements, where the first and second magneto-resistive elements are connected at respective ends through a first connecting portion in a central region, and the third and fourth magneto-resistive elements are connected at respective ends through a second connecting portion that is parallel to the first connecting portion. The first and fourth magneto-resistive elements are connected at respective other ends through a third connecting portion, and the second and third magneto-resistive elements are connected at respective other ends through a fourth connecting portion. Depending on an external signal magnetic field, resistance values of the first and third magneto-resistive elements change in a same increasing or decreasing direction, whereas resistance values of the second and fourth magneto-resistive elements change in an increasing or decreasing direction opposite to the direction of the first and third magneto-resistive elements.
    • 一种具有第一至第四磁阻元件的磁传感器,其中第一和第二磁阻元件通过中心区域中的第一连接部分在各自的端部连接,第三和第四磁阻元件在各自的端部连接 通过与第一连接部分平行的第二连接部分。 第一和第四磁阻元件在相应的另一端通过第三连接部连接,并且第二和第三磁阻元件通过第四连接部在相应的另一端连接。 取决于外部信号磁场,第一和第三磁阻元件的电阻值以相同的增加或减小的方向变化,而第二和第四磁阻元件的电阻值在与 第一和第三磁阻元件的方向。
    • 10. 发明申请
    • Magnetic Sensor
    • 磁传感器
    • US20110031965A1
    • 2011-02-10
    • US12816725
    • 2010-06-16
    • Shunji SARUKIHiraku Hirabayashi
    • Shunji SARUKIHiraku Hirabayashi
    • G01B7/30
    • G01D3/036G01D5/24476
    • A magnetic sensor includes a first detection unit and a second detection unit. The first detection unit calculates a first detection angle which is a detected value of a first angle that a direction of an external magnetic field in a first position forms with respect to a first direction. The second detection unit calculates a second detection angle which is a detected value of a second angle that the direction of the external magnetic field in a second position forms with respect to a second direction. The first detection angle includes a first angular error. The second detection angle includes a second angular error. The first angular error and the second angular error differ in phase by an odd number of times ½ of the error period.
    • 磁传感器包括第一检测单元和第二检测单元。 第一检测单元计算作为相对于第一方向形成第一位置的外部磁场的方向的第一角度的检测值的第一检测角度。 第二检测单元计算作为相对于第二方向形成第二位置的外部磁场的方向的第二角度的检测值的第二检测角度。 第一检测角度包括第一角度误差。 第二检测角度包括第二角度误差。 第一个角度误差和第二个角度误差的相位差异为误差周期的1/2倍。