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    • 6. 发明申请
    • SHEET CONVEYING DEVICE OF IMAGE FORMING APPARATUS
    • 图像形成装置的输送装置
    • US20100303529A1
    • 2010-12-02
    • US12789354
    • 2010-05-27
    • Tetsuo Shiba
    • Tetsuo Shiba
    • G03G15/00B65H5/06
    • B65H5/38B65H5/062B65H2404/52B65H2404/6111B65H2801/06G03G15/6558
    • A conveying device includes a first curved guide member, a second guide member which has a radius of curvature larger than the first guide member and guides a recording medium between the second guide member and the first guide member, a pinching and conveying section which is disposed on an entrance side of a conveyance path including the first guide member and the second guide member, pinches the recording medium and conveys the recording medium into the conveyance path, and a support member which is provided on the second guide member at.a position adjacent to the pinching and conveying section, and has a support point on an extended line of a normal line of a nip of the pinching and conveying section.
    • 输送装置包括第一弯曲引导构件,第二引导构件,其具有比第一引导构件大的曲率半径,并且将记录介质引导到第二引导构件与第一引导构件之间;夹持和输送部, 在包括第一引导构件和第二引导构件的输送路径的入口侧,夹持记录介质并将记录介质输送到输送路径中;以及支撑构件,其设置在邻近的位置处的第二引导构件上 并且在夹持和输送部分的辊隙的法线延伸线上具有支撑点。
    • 8. 发明授权
    • Semiconductor laser
    • 半导体激光器
    • US5805629A
    • 1998-09-08
    • US747050
    • 1996-11-12
    • Masayoshi TakemiTatsuya KimuraDaisuke SuzukiTetsuo ShibaKimitaka Shibata
    • Masayoshi TakemiTatsuya KimuraDaisuke SuzukiTetsuo ShibaKimitaka Shibata
    • H01L21/20H01S5/00H01S5/20H01S5/22H01S5/227H01S5/323H01S3/19
    • H01S5/227H01S5/2081H01S5/2201H01S5/2206H01S5/2275H01S5/32391
    • A semiconductor device includes a p type InP substrate with a (001) surface; a mesa structure formed by dry etching, extending along a direction, including semiconductor layers, having (110) side surfaces, and a height H.sub.m ; and mesa burying layers including a p type InP burying layer on the (110) side surfaces and the (001) surface, the p type InP burying layer having a thickness D.sub.p, and an n type InP burying layer on the p type InP burying layer. An angle between a (111)B surface and (001) surface is .theta..sub.111, the growth rates on the (110) side surfaces and on the (001) surface are respectively R.sub.g (110) and R.sub.g (001), an angle .theta. is tan .theta.=R.sub.g (110)/R.sub.g (001) and the critical thickness D.sub.n of the n type InP burying layer on the (001) surface when the n type InP burying layer is not grown on the (111)B surface is ##EQU1## The n type InP burying layer has a thickness D.ltoreq.D.sub.n. The leakage current path width is narrowed and contact of the n type InP burying layer and an uppermost layer of the semiconductor layers is avoided. Consequently, a semiconductor device having reduced leakage current and superior device characteristics is obtained.
    • 半导体器件包括具有(001)表面的p型InP衬底; 通过干蚀刻形成的台面结构,沿着<110>方向延伸,包括具有(1 + E,ov 1 + EE 0)侧表面的半导体层和高度Hm; (1 + E,ovs 1 + EE 0)侧表面和(001)表面的p型InP掩埋层和具有厚度Dp的p型InP掩埋层和n型InP掩埋层的台面掩埋层 在p型InP埋层中。 (111)B表面和(001)表面之间的角度为θ111,(1 + E,ovs 1 + EE 0)侧表面和(001)表面上的生长速率分别为Rg(1 + E ,ovs 1 + EE 0)和Rg(001),角度θ为tanθ= Rg(1 + E,ovs 1 + EE 0)/ Rg(001)和n型InP掩埋层的临界厚度Dn 在(111)B表面上未生长n型InP掩埋层时,(001)表面是n型InP掩埋层,其厚度D