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    • 2. 发明授权
    • Process for preparing copolymer
    • 制备共聚物的方法
    • US4560735A
    • 1985-12-24
    • US714759
    • 1985-03-22
    • Masao NakagawaKiyoshi MoriToshiaki Sugita
    • Masao NakagawaKiyoshi MoriToshiaki Sugita
    • C08F212/12C08F4/36
    • C08F212/12
    • A process for preparing .alpha.-methylstyrene/acrylonitrile copolymer by suspension or bulk polymerization of .alpha.-methylstyrene and acrylonitrile with at least one member selected from the group consisting of styrene, chlorostyrene, para-methylstyrene, t-butylstyrene, acrylic ester and methacrylic ester in the presence of a difunctional organic peroxide having a 10 hour half-life temperature of 60.degree. to 120.degree. C. and capable of producing a t-butyl radical, at a polymerization temperature of 80.degree. to 135.degree. C. The process produces the copolymers having excellent transparency, heat resistance and strength in a high conversion in a short time.
    • 通过α-甲基苯乙烯和丙烯腈与至少一种选自苯乙烯,氯苯乙烯,对甲基苯乙烯,叔丁基苯乙烯,丙烯酸酯和甲基丙烯酸酯的组分的悬浮或本体聚合制备α-甲基苯乙烯/丙烯腈共聚物的方法 在80℃至135℃的聚合温度下,存在10分钟半衰期温度为60℃至120℃并能够生产叔丁基的双官能有机过氧化物。该方法产生共聚物 在短时间内具有高转化率的优异的透明性,耐热性和强度。
    • 4. 发明授权
    • Systems and methods for detecting watermark formations on semiconductor wafers
    • 用于检测半导体晶片上的水印构造的系统和方法
    • US08580696B2
    • 2013-11-12
    • US11829581
    • 2007-07-27
    • Kiyoshi MoriShu IkedaGabriel Gebara
    • Kiyoshi MoriShu IkedaGabriel Gebara
    • H01L21/302
    • H01L21/67253
    • Systems and methods for detecting watermark formations on semiconductor wafers are described. In one embodiment, a method comprises providing a semiconductor wafer having at least one watermark sensitive region fabricated thereon, subjecting the wafer to a wet processing step, enhancing a susceptibility to detection of at least one watermark formation created on the at least one watermark sensitive region, and detecting the at least one watermark formation. In another embodiment, a method comprises growing a first oxide layer on a surface of a semiconductor wafer, patterning a watermark sensitive structure on the first oxide layer, depositing a silicon layer over the first oxide layer, doping a region of the silicon layer over the watermark sensitive structure with an impurity to create a watermark sensitive region that is prone to retaining watermark formations as result of a wet processing step, and growing a second oxide layer over the silicon layer.
    • 描述了用于检测半导体晶片上的水印结构的系统和方法。 在一个实施例中,一种方法包括提供具有在其上制造的至少一个水印敏感区域的半导体晶片,对晶片进行湿处理步骤,增强对至少一个水印敏感区域上产生的至少一个水印形成的检测的敏感性 并且检测所述至少一个水印形成。 在另一个实施例中,一种方法包括在半导体晶片的表面上生长第一氧化物层,在第一氧化物层上构图水印敏感结构,在第一氧化物层上沉积硅层,将硅层的区域掺杂在 具有杂质的水印敏感结构,以产生湿式处理步骤结果易于保留水印结构的水印敏感区域,并在硅层上生长第二氧化物层。