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    • 3. 发明授权
    • Semiconductor photo-detecting element
    • 半导体光电检测元件
    • US07560751B2
    • 2009-07-14
    • US10589004
    • 2005-02-04
    • Takeshi NakataKikuo MakitaAtsushi Shono
    • Takeshi NakataKikuo MakitaAtsushi Shono
    • H01L31/107
    • H01L31/1075
    • In a semiconductor photo-detecting element (an avalanche photodiode), a high-sensitivity element is obtained by incorporating a multiplication layer having high-performance multiplication characteristics. By using a structure which reduces an electric field applied to an etching stopper layer, it is possible to use a multiplication layer having higher-performance multiplication characteristics (a multiplication layer which performs multiplication with a high electric field). The first method to realize this is to use a conductivity type multiplication layer. The second method is to use a structure in which a field buffer layer of the second conductivity type is incorporated. As a result of the use of these methods, a structure which applies an electric field lower than the multiplier electrical field to the etching stopper layer is obtained.
    • 在半导体光检测元件(雪崩光电二极管)中,通过并入具有高性能乘法特性的乘法层来获得高灵敏度元件。 通过使用减少施加到蚀刻阻挡层的电场的结构,可以使用具有更高性能乘法特性的乘法层(与高电场进行乘法的乘法层)。 实现这一点的第一种方法是使用导电型倍增层。 第二种方法是使用其中结合有第二导电类型的场缓冲层的结构。 作为使用这些方法的结果,获得了将低于乘法器电场的电场施加到蚀刻停止层的结构。
    • 5. 发明申请
    • Multiprocessor system
    • 多处理器系统
    • US20080077928A1
    • 2008-03-27
    • US11898881
    • 2007-09-17
    • Hidenori MatsuzakiShigehiro AsanoAtsushi Shono
    • Hidenori MatsuzakiShigehiro AsanoAtsushi Shono
    • G06F9/50
    • G06F9/5044
    • A multiprocessor system includes a processor unit including a core A including a first processing mechanism for improving processing performance of data processing and a PM unit for collecting usage information of hardware resources being used or used in data processing and a core B having a second processing mechanism adopting the same processing system as the first processing mechanism and being inferior in processing performance to the first processing mechanism; and a scheduler for supplying a task not previously executed to the core A and a task to be re-executed to one of processor cores (A and B) to process the task, selected out of the processor unit by referencing the usage information of the hardware resources of the task previously collected in the PM unit at the execution time of application software including a plurality of tasks containing the same task.
    • 多处理器系统包括:处理器单元,其包括:核心A,其包括用于提高数据处理的处理性能的第一处理机构;以及用于收集在数据处理中使用或使用的硬件资源的使用信息的PM单元;以及具有第二处理机构 采用与第一处理机构相同的处理系统,并且处理性能劣于第一处理机构; 以及调度器,用于将先前未被执行的任务提供给核心A,以及将待执行的任务重新执行到处理器核心(A和B)中的一个,以处理从处理器单元中选出的任务,方法是参考 在应用软件的执行时间先前在PM单元中收集的任务的硬件资源包括包含相同任务的多个任务。
    • 6. 发明申请
    • Semiconductor photo-detecting element
    • 半导体光电检测元件
    • US20070090397A1
    • 2007-04-26
    • US10589004
    • 2005-02-04
    • Takeshi NakataKikuo MakitaAtsushi Shono
    • Takeshi NakataKikuo MakitaAtsushi Shono
    • H01L31/00
    • H01L31/1075
    • In a semiconductor photo-detecting element (an avalanche photodiode), a high-sensitivity element is obtained by incorporating a multiplication layer having high-performance multiplication characteristics. By using a structure which reduces an electric field applied to an etching stopper layer, it is possible to use a multiplication layer having higher-performance multiplication characteristics (a multiplication layer which performs multiplication with a high electric field). The first method to realize this is to use a conductivity type multiplication layer. The second method is to use a structure in which a field buffer layer of the second conductivity type is incorporated. As a result of the use of these methods, a structure which applies an electric field lower than the multiplier electrical field to the etching stopper layer is obtained.
    • 在半导体光检测元件(雪崩光电二极管)中,通过并入具有高性能乘法特性的乘法层来获得高灵敏度元件。 通过使用减少施加到蚀刻阻挡层的电场的结构,可以使用具有更高性能乘法特性的乘法层(与高电场进行乘法的乘法层)。 实现这一点的第一种方法是使用导电型倍增层。 第二种方法是使用其中结合有第二导电类型的场缓冲层的结构。 作为使用这些方法的结果,获得了将低于乘法器电场的电场施加到蚀刻停止层的结构。