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1. 发明申请

US20110152486A1 SUPPORTED NONMETALLOCENE CATALYST AND PREPARATION THEREOF 有权
标题翻译：支持非亚麻酸催化剂及其制备方法
公开(公告)号：US20110152486A1
公开(公告)日：2011-06-23
申请号：US12669394
申请日：2008-10-15
申请人： Yuefeng Gu , Chuanfeng Li , Xiaoli Yao , Zhonglin Ma , Bo Liu , Feng Guo , Yaming Wang , Jiye Bai , Shaohui Chen , Xiaoqiang Li
发明人： Yuefeng Gu , Chuanfeng Li , Xiaoli Yao , Zhonglin Ma , Bo Liu , Feng Guo , Yaming Wang , Jiye Bai , Shaohui Chen , Xiaoqiang Li
IPC分类号： B01J31/38 , B01J31/06 , B01J31/02 , B01J31/12 , B01J31/14 , B01J37/08 , B01J37/03 , C08F4/52 , C08F4/14
CPC分类号： C08F10/00 , C08F110/02 , C08F210/16 , C08F4/651 , C08F4/659 , C08F2500/18 , C08F210/08 , C08F4/64131 , C08F4/64137 , C08F4/64124 , C08F4/64117
摘要： This invention relates to a supported nonmetallocene catalyst for olefin polymerization, which is produced by directly reacting a nonmetallocene ligand with a catalytically active metallic compound on a carrier through an in-situ supporting process. The process according to this invention is simple and feasible, and it is easy to adjust the load of the nonmetallocene ligand on the porous carrier. The supported nonmetallocene catalyst according to this invention can be used for olefin homopolymerization/copolymerization, even in combination with a comparatively less amount of the co-catalyst, to achieve a comparatively high polymerization activity. Further, the polymer product obtained therewith boasts desirable polymer morphology and a high bulk density.
摘要翻译：本发明涉及用于烯烃聚合的负载型非金属茂催化剂，其通过原位支持方法在载体上直接使非茂金属配体与催化活性金属化合物直接反应制备。根据本发明的方法是简单和可行的，并且容易调节多金属载体上非茂金属配体的负载。根据本发明的负载型非茂金属催化剂，即使与较少量的助催化剂组合也可用于烯烃均聚/共聚，以达到较高的聚合活性。此外，由此获得的聚合物产物具有期望的聚合物形态和高堆积密度。

2. 发明申请

US20110237764A1 MAGNESIUM COMPOUND-SUPPORTED NONMETALLOCENE CATALYST AND PREPARATION THEREOF 有权
标题翻译：镁化合物支持的非金属催化剂及其制备
公开(公告)号：US20110237764A1
公开(公告)日：2011-09-29
申请号：US12671654
申请日：2008-10-15
申请人： Yuefeng Gu , Xiaoli Yao , Chuanfeng Li , Zhonglin Ma , Feng Guo , Bo Liu , Yaming Wang , Shaohui Chen , Xiaoqiang Li , Jiye Bai
发明人： Yuefeng Gu , Xiaoli Yao , Chuanfeng Li , Zhonglin Ma , Feng Guo , Bo Liu , Yaming Wang , Shaohui Chen , Xiaoqiang Li , Jiye Bai
IPC分类号： C08F4/52 , B01J31/38 , B01J31/12 , B01J37/03
CPC分类号： C08F10/00 , C08F110/02 , C08F210/16 , C08F4/651 , C08F2500/18 , C08F210/14 , C08F4/64117 , C08F4/64137 , C08F4/64124 , C08F4/64131
摘要： The present invention relates to a magnesium compound-supported nonmetallocene catalyst, which is produced by directly contacting a catalytically active metallic compound with a nonmetallocene ligand-containing magnesium compound, or by directly contacting a nonmetallocene ligand with a catalytically active metal-containing magnesium compound, through an in-situ supporting process. The process is simple and flexible. In the process, there are many variables in response for adjusting the polymerization activity of the catalyst, and the margin for adjusting the catalyst load or the catalyst polymerization activity is broad. The magnesium compound-supported nonmetallocene catalyst according to this invention can be used for olefin homopolymerization/copolymerization, in combination with a comparatively less amount of the co-catalyst, to achieve a comparatively high polymerization activity. Further, the polymer product obtained therewith boasts high bulk density and adjustable molecular weight distribution.
摘要翻译：本发明涉及通过使催化活性金属化合物与含非茂金属配体的镁化合物直接接触或通过使非茂金属配体与含有催化活性金属的镁化合物直接接触而制备的镁化合物负载的非金属茂催化剂，通过现场支持流程。该过程简单灵活。在此过程中，为了调节催化剂的聚合活性有许多变数，调整催化剂负载或催化剂聚合活性的余量很宽。根据本发明的镁化合物负载的非金属茂催化剂可以用于烯烃均聚/共聚，与较少量的助催化剂组合，以达到较高的聚合活性。此外，由此获得的聚合物产物具有高堆积密度和可调节的分子量分布。

3. 发明授权

US08716416B2 Magnesium-compound supported nonmetallocene catalyst and preparation thereof 有权
标题翻译：镁化合物负载的非金属茂催化剂及其制备
公开(公告)号：US08716416B2
公开(公告)日：2014-05-06
申请号：US12671654
申请日：2008-10-15
申请人： Yuefeng Gu , Xiaoli Yao , Chuanfeng Li , Zhonglin Ma , Feng Guo , Bo Liu , Yaming Wang , Shaohui Chen , Xiaoqiang Li , Jiye Bai
发明人： Yuefeng Gu , Xiaoli Yao , Chuanfeng Li , Zhonglin Ma , Feng Guo , Bo Liu , Yaming Wang , Shaohui Chen , Xiaoqiang Li , Jiye Bai
IPC分类号： C08F4/50
CPC分类号： C08F10/00 , C08F110/02 , C08F210/16 , C08F4/651 , C08F2500/18 , C08F210/14 , C08F4/64117 , C08F4/64137 , C08F4/64124 , C08F4/64131
摘要： The present invention relates to a magnesium compound-supported nonmetallocene catalyst, which is produced by directly contacting a catalytically active metallic compound with a nonmetallocene ligand-containing magnesium compound, or by directly contacting a nonmetallocene ligand with a catalytically active metal-containing magnesium compound, through an in-situ supporting process. The process is simple and flexible. In the process, there are many variables in response for adjusting the polymerization activity of the catalyst, and the margin for adjusting the catalyst load or the catalyst polymerization activity is broad. The magnesium compound-supported nonmetallocene catalyst according to this invention can be used for olefin homopolymerization/copolymerization, in combination with a comparatively less amount of the co-catalyst, to achieve a comparatively high polymerization activity. Further, the polymer product obtained therewith boasts high bulk density and adjustable molecular weight distribution.
摘要翻译：本发明涉及通过使催化活性金属化合物与含非茂金属配体的镁化合物直接接触或通过使非茂金属配体与含有催化活性金属的镁化合物直接接触而制备的镁化合物负载的非金属茂催化剂，通过现场支持流程。该过程简单灵活。在此过程中，为了调节催化剂的聚合活性有许多变数，调整催化剂负载或催化剂聚合活性的余量很宽。根据本发明的镁化合物负载的非金属茂催化剂可以用于烯烃均聚/共聚，与较少量的助催化剂组合，以达到较高的聚合活性。此外，由此获得的聚合物产物具有高堆积密度和可调节的分子量分布。

4. 发明授权

US08193288B2 Supported nonmetallocene catalyst and preparation thereof 有权
标题翻译：负载型非金属茂催化剂及其制备
公开(公告)号：US08193288B2
公开(公告)日：2012-06-05
申请号：US12669394
申请日：2008-10-15
申请人： Yuefeng Gu , Chuanfeng Li , Xiaoli Yao , Zhonglin Ma , Bo Liu , Feng Guo , Yaming Wang , Jiye Bai , Shaohui Chen , Xiaoqiang Li
发明人： Yuefeng Gu , Chuanfeng Li , Xiaoli Yao , Zhonglin Ma , Bo Liu , Feng Guo , Yaming Wang , Jiye Bai , Shaohui Chen , Xiaoqiang Li
IPC分类号： C08F4/00 , C08F4/06 , C08F4/44 , C08F4/02 , C08F4/60 , B01J31/00 , B01J37/00
CPC分类号： C08F10/00 , C08F110/02 , C08F210/16 , C08F4/651 , C08F4/659 , C08F2500/18 , C08F210/08 , C08F4/64131 , C08F4/64137 , C08F4/64124 , C08F4/64117
摘要： This invention relates to a supported nonmetallocene catalyst for olefin polymerization, which is produced by directly reacting a nonmetallocene ligand with a catalytically active metallic compound on a carrier through an in-situ supporting process. The process according to this invention is simple and feasible, and it is easy to adjust the load of the nonmetallocene ligand on the porous carrier. The supported nonmetallocene catalyst according to this invention can be used for olefin homopolymerization/copolymerization, even in combination with a comparatively less amount of the co-catalyst, to achieve a comparatively high polymerization activity. Further, the polymer product obtained therewith boasts desirable polymer morphology and a high bulk density.
摘要翻译：本发明涉及用于烯烃聚合的负载型非金属茂催化剂，其通过原位支持方法在载体上直接使非茂金属配体与催化活性金属化合物直接反应制备。根据本发明的方法是简单和可行的，并且容易调节多金属载体上非茂金属配体的负载。根据本发明的负载型非茂金属催化剂，即使与较少量的助催化剂组合也可用于烯烃均聚/共聚，以达到较高的聚合活性。此外，由此获得的聚合物产物具有期望的聚合物形态和高堆积密度。

5. 发明申请

US20120232236A1 SUPPORTED NONMETALLOCENE CATALYST, PREPARATION AND USE THEREOF 有权
公开(公告)号：US20120232236A1
公开(公告)日：2012-09-13
申请号：US13509555
申请日：2010-10-13
申请人： Chuanfeng Li , Hongpin Ren , Xiaoli Yao , Lin Kan , Bo Liu , Zhonglin Ma , Feng Guo , Kaixiu Wang , Yaming Wang , Lijuan Yang
发明人： Chuanfeng Li , Hongpin Ren , Xiaoli Yao , Lin Kan , Bo Liu , Zhonglin Ma , Feng Guo , Kaixiu Wang , Yaming Wang , Lijuan Yang
IPC分类号： C08F4/58 , C08F10/00
CPC分类号： C08F10/00 , C08F4/6555 , C08F4/651 , C08F4/64124 , C08F4/64131 , C08F4/64137
摘要： This invention relates to a supported nonmetallocene catalyst and preparation thereof. The supported nonmetallocene catalyst can be produced with a simple and feasible process and is characterized by an easily controllable polymerization activity. This invention further relates to use of the supported nonmetallocene catalyst in olefin homopolymerization/copolymerization, which is characterized by a lowered assumption of the co-catalyst as compared with the prior art.

6. 发明授权

US08952113B2 Supported nonmetallocene catalyst, preparation and use thereof 有权
公开(公告)号：US08952113B2
公开(公告)日：2015-02-10
申请号：US13509555
申请日：2010-10-13
申请人： Chuanfeng Li , Hongping Ren , Xiaoli Yao , Lin Kan , Bo Liu , Zhonglin Ma , Feng Guo , Kaixiu Wang , Yaming Wang , Lijuan Yang
发明人： Chuanfeng Li , Hongping Ren , Xiaoli Yao , Lin Kan , Bo Liu , Zhonglin Ma , Feng Guo , Kaixiu Wang , Yaming Wang , Lijuan Yang
IPC分类号： C08F4/50 , C08F4/52 , C08F4/64 , C08F4/76 , B01J31/38
CPC分类号： C08F10/00 , C08F4/6555 , C08F4/651 , C08F4/64124 , C08F4/64131 , C08F4/64137
摘要： This invention relates to a supported nonmetallocene catalyst and preparation thereof. The supported nonmetallocene catalyst can be produced with a simple and feasible process and is characterized by an easily controllable polymerization activity. This invention further relates to use of the supported nonmetallocene catalyst in olefin homopolymerization/copolymerization, which is characterized by a lowered assumption of the co-catalyst as compared with the prior art.

7. 发明授权

US09689055B2 Complete non-cyanogens wet process for green recycling of waste printed circuit board 有权
公开(公告)号：US09689055B2
公开(公告)日：2017-06-27
申请号：US13598177
申请日：2012-08-29
申请人： Shengen Zhang , Bin Li , Dean Pan , Jianjun Tian , Bo Liu
发明人： Shengen Zhang , Bin Li , Dean Pan , Jianjun Tian , Bo Liu
IPC分类号： C22B3/20 , C22B11/00 , C22B13/00 , C22B15/00 , C22B25/00 , C25C1/12 , C22B3/00 , C22B7/00
CPC分类号： C22B11/046 , C22B7/00 , C22B15/0056 , C25C1/12 , Y02P10/214 , Y02P10/22 , Y02P10/228 , Y02P10/236
摘要： The invention related to the recycling field of waste printed circuit boards (WPCB), and especially involved a complete non-cyanogens wet process for green recycling of WPCB, which belonged to the field of recycle economy. In the invention, the process included that WPCB were broken by the jaw crusher, and then mixed copper powders and nonmetallic powders were separated by the method of air classification, the mixed copper powders were smelted and casted to get copper anode plates, the copper was purified by electrolytion, the valuable metals (such as copper, gold, silver, platinum and palladium, lead and tin) were recycled from the copper anode slime, and the waste water was recycled. The recovery ratio of all-metal was above 98%. The purity of the cathode copper was up to 4N level. The ratio of de-coppering was above 96%. The recovery ratio of gold was above 98.

8. 发明授权

US09478277B1 Tri-level-cell DRAM and sense amplifier with alternating offset voltage 有权
标题翻译：具有交替偏置电压的三电平单元DRAM和读出放大器
公开(公告)号：US09478277B1
公开(公告)日：2016-10-25
申请号：US14844003
申请日：2015-09-03
申请人： Bo Liu
发明人： Bo Liu
IPC分类号： G11C11/401 , G11C11/4096 , G11C11/56
CPC分类号： G11C11/4096 , G11C7/02 , G11C7/065 , G11C7/08 , G11C11/4091 , G11C11/4094 , G11C11/4099 , G11C11/565 , G11C16/10 , G11C16/30 , G11C2211/5634
摘要： Tri-level-cell dynamic random access memory (DRAM) stores 3 levels of voltage (0, VDD/2, VDD) into a plurality of memory cells. Selected memory cell connected to bitline (BLT) to develop signal voltage, and adjacent reference bitline (BLR) develops reference voltage at VDD/2. An asymmetrical sensing amplifier (ASA), which has alternative positive offset and negative offset, is used to sense signal voltage and reference voltage for both their difference and sameness. ASA control signals, A and B, switch at different timing points or at different voltage level or the combination of both to have offset voltage set at either positive or negative polarity. Two consecutive read out from one ASA or one single read out from two ASA can be implemented to read memory cells data to local IOs. Output from ASA will be used to restore voltage back to the accessed memory cells.
摘要翻译：三电平单元动态随机存取存储器（DRAM）将3级电压（0，VDD / 2，VDD）存储到多个存储单元中。连接到位线（BLT）的选定存储单元产生信号电压，并且相邻的参考位线（BLR）产生VDD / 2的参考电压。具有替代正偏移和负偏移的不对称感测放大器（ASA）用于检测信号电压和参考电压两者的差异和相同性。 ASA控制信号A和B在不同的定时点或不同的电压电平下进行切换，或者两者的组合使偏移电压设置为正或负极性。可以实现从一个ASA或两个ASA读取的两个连续读出，以将内存单元数据读取到本地IO。来自ASA的输出将用于将电压恢复到访问的存储单元。

9. 发明授权

US09334583B2 Method of preventing auto-doping during epitaxial layer growth by cleaning the reaction chamber with hydrogen chloride 有权
标题翻译：通过用氯化氢清洗反应室来防止外延层生长期间的自掺杂的方法
公开(公告)号：US09334583B2
公开(公告)日：2016-05-10
申请号：US13202944
申请日：2011-06-27
申请人： Chao Zhang , Zhitang Song , Xudong Wan , Bo Liu , Guanping Wu , Ting Zhang , Zuoya Yang , Zhifeng Xie
发明人： Chao Zhang , Zhitang Song , Xudong Wan , Bo Liu , Guanping Wu , Ting Zhang , Zuoya Yang , Zhifeng Xie
IPC分类号： C30B25/02 , C30B25/18 , C30B29/06 , C30B23/02 , H01L21/02
CPC分类号： C30B25/186 , C30B23/025 , C30B25/02 , C30B29/06 , H01L21/02381 , H01L21/02532 , H01L21/02576 , H01L21/0262 , H01L21/02661
摘要： An epitaxial growth method for preventing auto-doping effect is presented. This method starts with the removal of impurities from the semiconductor substrate and the reaction chamber to be used. Then the semiconductor substrate is loaded in the cleaned reaction chamber to be pre-baked under vacuum conditions before the extraction of the dopant atoms desorbed from the surface of the semiconductor substrate. Next, under high temperature and low gas flow conditions, a first intrinsic epitaxial layer is formed on the surface of said semiconductor substrate. Following this, under low temperature and high gas flow conditions, a second epitaxial layer of required thickness is formed on the structural surface of the grown intrinsic epitaxial layer. Last, silicon wafer is unloaded after cooling. This method can prevent auto-doping effect during the epitaxial growth on semiconductor substrate and thus ensure the performance and enhance the reliability of the devices in peripheral circuit region.
摘要翻译：提出了一种防止自动掺杂效应的外延生长方法。该方法首先从要使用的半导体衬底和反应室中除去杂质。然后，在从半导体衬底的表面脱离的掺杂剂原子的提取之前，将半导体衬底装载在清洁的反应室中，以在真空条件下预烘烤。接下来，在高温低气流条件下，在所述半导体衬底的表面上形成第一本征外延层。接下来，在低温和高气体流动条件下，在生长的本征外延层的结构表面上形成所需厚度的第二外延层。最后，冷却后硅片卸载。该方法可以防止在半导体衬底上的外延生长期间的自掺杂效应，从而确保外围电路区域中器件的性能和可靠性。

10. 发明申请

US20150146322A1 DATA STORAGE DEVICE 有权
标题翻译：数据存储设备
公开(公告)号：US20150146322A1
公开(公告)日：2015-05-28
申请号：US14342111
申请日：2012-08-31
申请人： Chao Bi , Kui Cai , Kheong Sann Chan , Zhi Yong Ching , Moulay Rachid Elidrissi , Guchang Han , Zhimin He , Phyu Hla Nu , Jiang Feng Hu , Wei Hua , Quan Jiang , Siang Huei Leong , Wuzhong Lin , Bo Liu , Yansheng Ma , Chun Lian Ong , Jianzhong Shi , Cheng Su Soh , Sufui Sophia Tan , Li Wang , Chiew Leong Wong , Weiya Xi , Khai Leong Yong , Shengkai Yu , Yin Quan Yu , Zhimin Yuan , Jing Liang Zhang , Tiejun Zhou , Pantelis Alexopoulos , Budi Santoso , Qide Zhang , Kannan Sundaravadivelu , Ningyu Liu , Jianqiang Mou , Chong Wee Lee , Ke Gan , Boon Long Ibrahim See , Leonard Gonzaga , Wee Kiat Lim , Mengjun Liu , Venkataramanan Venkatakrishnan , Cheng Peng Tan
发明人： Chao Bi , Kui Cai , Kheong Sann Chan , Zhi Yong Ching , Moulay Rachid Elidrissi , Guchang Han , Zhimin He , Phyu Hla Nu , Jiang Feng Hu , Wei Hua , Quan Jiang , Siang Huei Leong , Wuzhong Lin , Bo Liu , Yansheng Ma , Chun Lian Ong , Jianzhong Shi , Cheng Su Soh , Sufui Sophia Tan , Li Wang , Chiew Leong Wong , Weiya Xi , Khai Leong Yong , Shengkai Yu , Yin Quan Yu , Zhimin Yuan , Jing Liang Zhang , Tiejun Zhou , Pantelis Alexopoulos , Budi Santoso , Qide Zhang , Kannan Sundaravadivelu , Ningyu Liu , Jianqiang Mou , Chong Wee Lee , Ke Gan , Boon Long Ibrahim See , Leonard Gonzaga , Wee Kiat Lim , Mengjun Liu , Venkataramanan Venkatakrishnan , Cheng Peng Tan
IPC分类号： G11B19/20
CPC分类号： G11B19/2009 , G11B19/20 , G11B27/324 , G11B2220/235 , G11B2220/2516 , H02K3/26
摘要： According to an embodiment of the present invention, a data storage device comprising a motor having a stator is disclosed. The stator may include a substrate having a first surface and a second surface opposite to the first surface; and a n-phase winding arrangement having n phase windings; wherein each phase winding comprises m flat fractional-pitch coils arranged on the first surface of the substrate such that the coils are spaced apart uniformly along a closed loop and connected in series; wherein each coil together with an angular section of the substrate between the coil and an adjacent coil of the same phase winding defines a stator pole-pair; and wherein m is an integer larger than 1.
摘要翻译：根据本发明的实施例，公开了一种包括具有定子的电动机的数据存储装置。定子可以包括具有第一表面和与第一表面相对的第二表面的基底; 以及具有n相绕组的n相绕组装置; 其中每个相绕组包括布置在基板的第一表面上的m个扁平分数节距线圈，使得线圈沿着闭环均匀间隔并串联连接; 其中每个线圈与所述线圈与相同相绕组的相邻线圈之间的所述衬底的角部分一起限定了定子极对; 并且其中m是大于1的整数。

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