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1. 发明授权

US07576374B2 Semiconductor device with robust polysilicon fuse 有权
标题翻译：半导体器件具有坚固的多晶硅保险丝
公开(公告)号：US07576374B2
公开(公告)日：2009-08-18
申请号：US11475341
申请日：2006-06-26
申请人： Yuan-Pang Lee , Chen-Shiang Shieh , Ping-Hung Yin , Fei-Yun Chen , Yuan-Ko Hwang
发明人： Yuan-Pang Lee , Chen-Shiang Shieh , Ping-Hung Yin , Fei-Yun Chen , Yuan-Ko Hwang
IPC分类号： H01L29/00
CPC分类号： H01L23/5258 , H01L23/5256 , H01L2924/0002 , H01L2924/00
摘要： A new method is provided to create a polysilicon fuse. The invention provides for applying a first oxide plasma treatment to the surface of the created polysilicon fuse, creating a thin layer of native oxide over the surface of the created polysilicon fuse, followed by a DI water rinse. This thin layer of native oxide is made more robust by applying a second oxide plasma treatment to exposed surfaces, this more robust layer of native oxide protects the polysilicon fuse during subsequent processing steps of wet photoresist and polymer removal.
摘要翻译：提供了一种新的方法来产生多晶硅保险丝。本发明提供了将第一氧化物等离子体处理应用到所产生的多晶硅保险丝的表面上，在所产生的多晶硅保险丝的表面上产生一层自然氧化物，然后进行去离子水冲洗。通过对暴露的表面施加第二氧化物等离子体处理，使这种天然氧化物薄层变得更加坚固。在湿光致抗蚀剂和聚合物去除的后续处理步骤中，更坚固的天然氧化物层保护多晶硅熔丝。

2. 发明申请

US20060240363A1 SEMICONDUCTOR DEVICE WITH ROBUST POLYSILICON FUSE 有权
标题翻译：具有稳定多晶硅保险丝的半导体器件
公开(公告)号：US20060240363A1
公开(公告)日：2006-10-26
申请号：US11475341
申请日：2006-06-26
申请人： Yuan-Pang Lee , Chen-Shiang Shieh , Ping-Hung Yin , Fei-Yun Chen , Yuan-Ko Hwang
发明人： Yuan-Pang Lee , Chen-Shiang Shieh , Ping-Hung Yin , Fei-Yun Chen , Yuan-Ko Hwang
IPC分类号： G03F7/26
CPC分类号： H01L23/5258 , H01L23/5256 , H01L2924/0002 , H01L2924/00
摘要： A new method is provided to create a polysilicon fuse. The invention provides for applying a first oxide plasma treatment to the surface of the created polysilicon fuse, creating a thin layer of native oxide over the surface of the created polysilicon fuse, followed by a DI water rinse. This thin layer of native oxide is made more robust by applying a second oxide plasma treatment to exposed surfaces, this more robust layer of native oxide protects the polysilicon fuse during subsequent processing steps of wet photoresist and polymer removal.
摘要翻译：提供了一种新的方法来产生多晶硅保险丝。本发明提供了将第一氧化物等离子体处理应用到所产生的多晶硅保险丝的表面上，在所产生的多晶硅保险丝的表面上产生一层自然氧化物，然后进行去离子水冲洗。通过对暴露的表面施加第二氧化物等离子体处理，使这种天然氧化物薄层变得更加坚固。在湿光致抗蚀剂和聚合物去除的后续处理步骤中，更坚固的天然氧化物层保护多晶硅熔丝。

3. 发明授权

US07083897B2 Method of fabricating a poly fuse 失效
标题翻译：制造聚熔丝的方法
公开(公告)号：US07083897B2
公开(公告)日：2006-08-01
申请号：US10438681
申请日：2003-05-15
申请人： Yuan-Pang Lee , Chen-Shiang Shieh , Ping-Hung Yin , Fei-Yun Chen , Yuan-Ko Hwang
发明人： Yuan-Pang Lee , Chen-Shiang Shieh , Ping-Hung Yin , Fei-Yun Chen , Yuan-Ko Hwang
IPC分类号： G03C5/00
CPC分类号： H01L23/5258 , H01L23/5256 , H01L2924/0002 , H01L2924/00
摘要： A new method is provided to create a polysilicon fuse. The invention provides for applying a first oxide plasma treatment to the surface of the created polysilicon fuse, creating a thin layer of native oxide over the surface of the created polysilicon fuse, followed by a DI water rinse. This thin layer of native oxide is made more robust by applying a second oxide plasma treatment to exposed surfaces, this more robust layer of native oxide protects the polysilicon fuse during subsequent processing steps of wet photoresist and polymer removal.
摘要翻译：提供了一种新的方法来产生多晶硅保险丝。本发明提供了将第一氧化物等离子体处理应用到所产生的多晶硅保险丝的表面上，在所产生的多晶硅保险丝的表面上产生一层自然氧化物，然后进行去离子水冲洗。通过对暴露的表面施加第二氧化物等离子体处理，使这种天然氧化物薄层变得更加坚固。在湿光致抗蚀剂和聚合物去除的后续处理步骤中，更坚固的天然氧化物层保护多晶硅熔丝。

4. 发明授权

US08810701B2 Image sensor system and amplifying/digitizing circuit therof for promoting performance while saving on power consumption and reducing the circuit area 有权
标题翻译：图像传感器系统和放大/数字化电路，用于提高性能，同时节省功耗并减少电路面积
公开(公告)号：US08810701B2
公开(公告)日：2014-08-19
申请号：US12702271
申请日：2010-02-08
申请人： Shih-Feng Chen , Ping-Hung Yin
发明人： Shih-Feng Chen , Ping-Hung Yin
IPC分类号： H04N5/335 , H04N5/378 , H03M1/12 , H03F3/00 , H03M1/56
CPC分类号： H03F3/005 , H03F2200/261 , H03M1/1225 , H03M1/56 , H04N5/378
摘要： An amplifying/digitizing circuit with a signal amplifying capability and a comparator capability is provided. The amplifying/digitizing circuit includes an amplifier having an input end and an output end, and a control circuit. The control circuit is coupled to the input end and the output end of the amplifier. When the amplifying/digitizing circuit is operated under an amplifying mode, the control circuit has a first configuration to receive a first input signal and makes the amplifier generate an output voltage at the output end according to the first input signal and an amplification factor. When the amplifying/digitizing circuit is operated under an ADC mode, the control circuit has a second configuration to receive a second input signal and makes the amplifier generate a comparison result according to the second input signal and the output voltage.
摘要翻译：提供具有信号放大能力和比较器能力的放大/数字化电路。放大/数字化电路包括具有输入端和输出端的放大器和控制电路。控制电路耦合到放大器的输入端和输出端。当放大/数字化电路在放大模式下工作时，控制电路具有接收第一输入信号的第一配置，并使得放大器根据第一输入信号和放大系数在输出端产生输出电压。当放大/数字化电路在ADC模式下工作时，控制电路具有接收第二输入信号的第二配置，并使得放大器根据第二输入信号和输出电压产生比较结果。

5. 发明授权

US08389922B2 Sensing Devices and Manufacturing Methods Therefor 有权
标题翻译：感应装置及其制造方法
公开(公告)号：US08389922B2
公开(公告)日：2013-03-05
申请号：US12850090
申请日：2010-08-04
申请人： Ping-Hung Yin , Shuenn-Ren Hsiao
发明人： Ping-Hung Yin , Shuenn-Ren Hsiao
IPC分类号： H01L27/00
CPC分类号： H01L27/1464
摘要： A sensing device is provided. The sensing device includes a sensing pixel array and a memory unit. The sensing pixel array is formed in a substrate and includes a plurality of pixels for sensing light. The substrate has a first side and a second side opposite to the first side and receives the light through the first side for sensing the light. The memory unit is formed on the second side of the substrate for memorization.
摘要翻译：提供感测装置。感测装置包括感测像素阵列和存储器单元。感测像素阵列形成在衬底中，并且包括用于感测光的多个像素。衬底具有与第一侧相对的第一侧和第二侧，并且通过第一侧接收光以感测光。存储单元形成在用于存储的基板的第二侧上。

6. 发明申请

US20120293697A1 Image Sensor and Control Method for Image Sensor 审中-公开
标题翻译：图像传感器图像传感器和控制方法
公开(公告)号：US20120293697A1
公开(公告)日：2012-11-22
申请号：US13108381
申请日：2011-05-16
申请人： Ping-Hung Yin , Ching-Fong Chen
发明人： Ping-Hung Yin , Ching-Fong Chen
IPC分类号： H04N5/335 , H01L27/146
CPC分类号： H04N5/361
摘要： An image sensor including a plurality of first sensing pixels, a plurality of second sensing pixels, and a readout circuit is disclosed. The first sensing pixels are disposed within a sensitive region. The second sensing pixels are disposed within a non-sensitive region. The readout circuit repeatedly reads the output signals of the second sensing pixels to obtain an offset. The readout circuit processes the output signals of the first sensing pixels according to the offset.
摘要翻译：公开了一种包括多个第一感测像素，多个第二感测像素和读出电路的图像传感器。第一感测像素设置在敏感区域内。第二感测像素设置在非敏感区域内。读出电路重复读取第二感测像素的输出信号以获得偏移。读出电路根据偏移来处理第一感测像素的输出信号。

7. 发明申请

US20120049047A1 Sensing Devices 审中-公开
标题翻译：感应装置
公开(公告)号：US20120049047A1
公开(公告)日：2012-03-01
申请号：US12873494
申请日：2010-09-01
申请人： Ping-Hung Yin , Van Brian
发明人： Ping-Hung Yin , Van Brian
IPC分类号： G01J1/42
CPC分类号： G01J1/46 , H04N5/357 , H04N5/361 , H04N5/363 , H04N5/3745 , H04N5/37452 , H04N5/378
摘要： A sensing device includes a pixel unit and an output unit. The pixel unit includes a sensing element, a transfer transistor, a reset transistor, and an output transistor. The transfer transistor is coupled between the sensing element and a floating diffusion node. The reset transistor is coupled between a first node and the floating diffusion node. The output transistor has a control terminal coupled to the floating diffusion node and an input terminal coupled to the first node. During a readout period, the reset transistor is controlled by a reset phase to reset a level of the floating diffusion node. The output unit generates a pixel output signal at the first node according to the level of the floating diffusion node and a reference signal. During the readout period, the reference signal is at a higher level, and after the reset phase, the reference signal is at a lower level.
摘要翻译：感测装置包括像素单元和输出单元。像素单元包括感测元件，传输晶体管，复位晶体管和输出晶体管。传输晶体管耦合在感测元件和浮动扩散节点之间。复位晶体管耦合在第一节点和浮动扩散节点之间。输出晶体管具有耦合到浮动扩散节点的控制端和耦合到第一节点的输入端。在读出期间，复位晶体管由复位阶段来控制，以复位浮动扩散节点的电平。输出单元根据浮动扩散节点的电平和参考信号在第一节点产生像素输出信号。在读出期间，参考信号处于较高电平，在复位阶段之后，参考信号处于较低电平。

8. 发明授权

US08456556B2 Sensing pixel arrays and sensing devices using the same 有权
标题翻译：感测像素阵列和使用其的感测装置
公开(公告)号：US08456556B2
公开(公告)日：2013-06-04
申请号：US13010470
申请日：2011-01-20
申请人： Ping-Hung Yin , Shuenn-Ren Hsiao
发明人： Ping-Hung Yin , Shuenn-Ren Hsiao
IPC分类号： H04N3/14
CPC分类号： H04N5/3745
摘要： A sensing pixel array is provided and includes a plurality of pixels disposed in an array. Each pixel operates during an exposure period and a readout period and generates a readout signal. Each pixel includes a sensing unit and a sampling unit. The sensing unit senses light to generate a sensing signal during the exposure period. The sampling unit samples the sensing signal to generate a sensing output signal which serves as the readout signal during the readout period. During the exposure period, the sampling unit acts as a memory unit for storing an input signal and outputting an accessed output signal which serves as the readout signal.
摘要翻译：提供感测像素阵列并且包括以阵列布置的多个像素。每个像素在曝光期间和读出期间进行动作，生成读出信号。每个像素包括感测单元和采样单元。感测单元在曝光期间感测光以产生感测信号。采样单元对感测信号进行采样以产生在读出期间用作读出信号的感测输出信号。在曝光期间，采样单元用作存储单元，用于存储输入信号并输出用作读出信号的存取的输出信号。

9. 发明授权

US08278132B2 Image sensor and fabricating method thereof 有权
标题翻译：图像传感器及其制造方法
公开(公告)号：US08278132B2
公开(公告)日：2012-10-02
申请号：US12781825
申请日：2010-05-18
申请人： Chih-Min Liu , Fang-Ming Huang , Ping-Hung Yin , Kuo-Chan Huang , Chung-Wei Chang
发明人： Chih-Min Liu , Fang-Ming Huang , Ping-Hung Yin , Kuo-Chan Huang , Chung-Wei Chang
IPC分类号： H01L21/00
CPC分类号： H01L27/14636 , H01L27/1464 , H01L27/1469 , H01L2224/48091 , H01L2924/00014
摘要： The present invention provides an image sensor and a fabricating method thereof capable of approaching higher quantum efficiency and reducing cost. The method comprises: providing a substrate; forming a pixel region on a top surface of the substrate; forming an interlayer insulating layer and at least a metal line on the pixel region; forming an isolation carrier layer having a hole array therein on the interlayer insulating layer; grinding a lower surface of the substrate to reduce the thickness of the substrate; placing a plurality of conductors into the hole array to form a plurality of bumps on the isolation carrier layer.
摘要翻译：本发明提供能够接近较高量子效率并降低成本的图像传感器及其制造方法。该方法包括：提供衬底; 在所述基板的顶表面上形成像素区域; 在所述像素区域上形成层间绝缘层和至少金属线; 在层间绝缘层上形成具有孔阵列的隔离载体层; 研磨衬底的下表面以减小衬底的厚度; 将多个导体放置到孔阵列中以在隔离载体层上形成多个凸起。

10. 发明申请

US20120182170A1 Pipelined Recycling ADC with Shared Operational Amplifier Function 有权
标题翻译：具有共享运算放大器功能的流水回收ADC
公开(公告)号：US20120182170A1
公开(公告)日：2012-07-19
申请号：US13008361
申请日：2011-01-18
申请人： Ping-Hung Yin , Shih-Feng Chen
发明人： Ping-Hung Yin , Shih-Feng Chen
IPC分类号： H03M1/34
CPC分类号： H03M1/144 , H03M1/44
摘要： A pipelined recycling analog-to-digital converter (ADC), which converts a first analog input signal into a first digital output signal, including a first conversion stage and a second conversion stage is disclosed. The first conversion stage includes a first processing unit and a second processing unit. The first and the second processing units execute a number of conversion operations. For each conversion operation, an analog value and a digital code are generated by the first or the second processing unit. The first and the second processing units share an operational amplifier, and for each conversion operation. The second conversion stage includes a comparing unit which determines a specific analog value among the analog values generated by the first and the second processing units. When the specific analog value is not located within a predetermined range, the comparing unit generates a reset pulse to reset the operational amplifier.
摘要翻译：公开了一种流水线再循环模数转换器（ADC），其将第一模拟输入信号转换为包括第一转换级和第二转换级的第一数字输出信号。第一转换级包括第一处理单元和第二处理单元。第一和第二处理单元执行多个转换操作。对于每个转换操作，由第一或第二处理单元生成模拟值和数字代码。第一和第二处理单元共享运算放大器，并且用于每个转换操作。第二转换级包括比较单元，其确定由第一处理单元和第二处理单元生成的模拟值之间的特定模拟值。当特定模拟值不在预定范围内时，比较单元产生复位脉冲以复位运算放大器。

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