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1. 发明授权

US08368160B2 Image sensing device and fabrication thereof 有权
标题翻译：图像感测装置及其制造
公开(公告)号：US08368160B2
公开(公告)日：2013-02-05
申请号：US12898419
申请日：2010-10-05
申请人： Chung-Wei Chang , Fang-Ming Huang , Chi-Shao Lin , Yu-Ping Hu
发明人： Chung-Wei Chang , Fang-Ming Huang , Chi-Shao Lin , Yu-Ping Hu
IPC分类号： H01L31/042
CPC分类号： H01L31/18 , H01L27/14621 , H01L27/1463 , H01L27/14645 , H01L27/14689
摘要： An image sensing device is disclosed, including an epitaxy layer having the a conductivity type, including a first pixel area corresponding to a first incident light, a second pixel area corresponding to a second incident light, and a third pixel area corresponding to a third incident light, wherein the wavelength of the first incident light is longer than that of the second incident light and the wavelength of the second incident light is longer than that of the third incident light. A photodiode is disposed in an upper portion of the epitaxy layer, and a first deep well for reducing pixel-to-pixel talk of the image sensing device is disposed in a lower portion of the epitaxy layer in the second pixel area and the third pixel area, wherein at least a portion of the epitaxy layer in first pixel area does not include the first deep well.
摘要翻译：公开了一种图像感测装置，包括具有导电类型的外延层，包括对应于第一入射光的第一像素区域，对应于第二入射光的第二像素区域和对应于第三入射光的第三像素区域光，其中第一入射光的波长比第二入射光的波长长，第二入射光的波长比第三入射光的波长长。光电二极管设置在外延层的上部，并且用于减少图像感测装置的像素到像素的通话的第一深阱设置在第二像素区域中的外延层的下部和第三像素区域，其中第一像素区域中的外延层的至少一部分不包括第一深孔。

2. 发明申请

US20110278687A1 BACKSIDE-ILLUMINATED SENSOR WITH NOISE REDUCTION 审中-公开
标题翻译：带噪声的背光照明传感器
公开(公告)号：US20110278687A1
公开(公告)日：2011-11-17
申请号：US12781785
申请日：2010-05-17
申请人： Fang-Ming Huang , Ping-Hung Yin , Chung-Wei Chang
发明人： Fang-Ming Huang , Ping-Hung Yin , Chung-Wei Chang
IPC分类号： H01L31/0232 , H01L31/00
CPC分类号： H01L27/14643 , H01L27/14621 , H01L27/14627 , H01L27/14636 , H01L27/1464 , H01L27/14641 , H01L28/86
摘要： A backside-illuminated sensor includes a substrate, at least one lens and at least one pixel structure. The substrate has a front surface and a backside surface, and the lens is formed on the backside surface of the substrate and the pixel structure is formed on a pixel area included in the front surface of the substrate, where a projected area of the pixel area on the backside surface in a thickness direction of the substrate is covered by the lens. The pixel structure includes a first power node for receiving a first supply voltage, a second power node for receiving a second supply voltage different from the first supply voltage, a sensing element and a capacitor for noise reduction. The sensing element generates a sensing signal according to an incident luminance from the lens.
摘要翻译：背面照明传感器包括基底，至少一个透镜和至少一个像素结构。基板具有前表面和背面，透镜形成在基板的背面，并且像素结构形成在基板前表面的像素区域上，像素区域的投影面积在基板的厚度方向的背面上被透镜覆盖。像素结构包括用于接收第一电源电压的第一电源节点，用于接收不同于第一电源电压的第二电源电压的第二电源节点，用于降噪的电容器。感测元件根据来自透镜的入射亮度产生感测信号。

3. 发明授权

US08486815B2 Back-side illumination image sensor and method for fabricating back-side illumination image sensor 有权
标题翻译：背面照明图像传感器及背面照明用图像传感器的制造方法
公开(公告)号：US08486815B2
公开(公告)日：2013-07-16
申请号：US13101148
申请日：2011-05-05
申请人： Fang-Ming Huang , Tsung-Chieh Chang
发明人： Fang-Ming Huang , Tsung-Chieh Chang
IPC分类号： H01L31/14
CPC分类号： H01L27/14627 , H01L27/1464 , H01L27/14685 , H01L27/14689
摘要： A method for fabricating a back-side illumination image sensor includes: implanting a first type of dopant into an epitaxial layer disposed over a first side of a substrate layer to form a first dopant layer in a first side of the epitaxial layer; adhering a carry layer over the first dopant layer for carrying the substrate layer; grinding a second side of the substrate layer for exposing a second side of the epitaxial layer; implanting the first type of dopant into the epitaxial layer from the second side of the epitaxial layer to form a second dopant layer in the second side of the epitaxial layer; forming at least one metal layer over the second dopant layer after forming the second dopant layer in the second side of the epitaxial layer; removing the carry layer; and forming a color filtering module over the first dopant layer.
摘要翻译：一种制造背面照明图像传感器的方法，包括：将第一类型的掺杂剂注入设置在衬底层的第一侧上的外延层中，以在外延层的第一侧中形成第一掺杂剂层; 在第一掺杂剂层上粘附载体层以承载基底层; 研磨衬底层的第二面以暴露外延层的第二面; 从所述外延层的第二侧将所述第一类型的掺杂剂注入到所述外延层中，以在所述外延层的第二侧中形成第二掺杂剂层; 在所述外延层的第二侧中形成所述第二掺杂剂层之后，在所述第二掺杂剂层上形成至少一个金属层; 去除携带层; 以及在所述第一掺杂剂层上形成滤色模块。

4. 发明授权

US08431975B2 Back-side illumination image sensor 失效
标题翻译：背面照明图像传感器
公开(公告)号：US08431975B2
公开(公告)日：2013-04-30
申请号：US13018365
申请日：2011-01-31
申请人： Chih-Wei Hsiung , Fang-Ming Huang , Chung-Wei Chang
发明人： Chih-Wei Hsiung , Fang-Ming Huang , Chung-Wei Chang
IPC分类号： H01L31/101 , H01L31/113
CPC分类号： H01L27/14616 , H01L27/1461 , H01L27/14614 , H01L27/1464
摘要： A back side illumination (BSI) image sensor includes at least one pixel. The pixel area includes a photo diode and a transfer transistor. The transfer transistor has a control electrode made of a gate poly and a gate oxide for receiving a control instruction, a first electrode coupled to the photo diode, and a second electrode, wherein an induced conduction channel of the transfer transistor partially surrounds a recessed space which is filled with the gate poly and the gate oxide of the transfer transistor.
摘要翻译：背面照明（BSI）图像传感器包括至少一个像素。像素区域包括光电二极管和转移晶体管。转移晶体管具有由用于接收控制指令的栅极多晶硅和栅极氧化物制成的控制电极，耦合到光电二极管的第一电极和第二电极，其中转移晶体管的感应导通通道部分地包围凹陷空间其被转移晶体管的栅极多晶硅和栅极氧化物填充。

5. 发明授权

US08319306B2 Method of fabricating image sensor and image sensor thereof 有权
标题翻译：图像传感器及其图像传感器的制造方法
公开(公告)号：US08319306B2
公开(公告)日：2012-11-27
申请号：US12698073
申请日：2010-02-01
申请人： Han-Kang Liu , Fang-Ming Huang , Shao-Min Hung , Bo-Nan Chen
发明人： Han-Kang Liu , Fang-Ming Huang , Shao-Min Hung , Bo-Nan Chen
IPC分类号： H01L31/00
CPC分类号： H01L27/14685 , H01L27/14605 , H01L27/14621 , H01L27/14627
摘要： A method of fabricating an image sensor and an image sensor thereof are provided. The method comprises: providing a mask; utilizing the mask at a first position to form a first group of micro-lenses having a first height on a first group of color filters of a color filter array on a pixel array; shifting the mask from the first position to a second position, wherein a distance between the first position and the second position is substantially equal to a width of a pixel of the pixel array; and utilizing the mask at the second position to form a second group of micro-lenses having a second height, different from the first height, on a second group of color filters of the color filter array.
摘要翻译：提供了一种制造图像传感器及其图像传感器的方法。该方法包括：提供掩模; 在第一位置处利用掩模以形成在像素阵列上的滤色器阵列的第一组滤色器上具有第一高度的第一组微透镜; 将掩模从第一位置移动到第二位置，其中第一位置和第二位置之间的距离基本上等于像素阵列的像素的宽度; 并且在所述滤色器阵列的第二组滤色器上利用所述第二位置处的所述掩模形成具有与所述第一高度不同的第二高度的第二组微透镜。

6. 发明申请

US20120080766A1 Image Sensing Device and Fabrication Thereof 有权
标题翻译：影像感应装置及其制作
公开(公告)号：US20120080766A1
公开(公告)日：2012-04-05
申请号：US12898419
申请日：2010-10-05
申请人： Chung-Wei Chang , Fang-Ming Huang , Chi-Shao Lin , Yu-Ping Hu
发明人： Chung-Wei Chang , Fang-Ming Huang , Chi-Shao Lin , Yu-Ping Hu
IPC分类号： H01L27/146 , H01L31/18
CPC分类号： H01L31/18 , H01L27/14621 , H01L27/1463 , H01L27/14645 , H01L27/14689
摘要： An image sensing device is disclosed, including an epitaxy layer having the a conductivity type, including a first pixel area corresponding to a first incident light, a second pixel area corresponding to a second incident light, and a third pixel area corresponding to a third incident light, wherein the wavelength of the first incident light is longer than that of the second incident light and the wavelength of the second incident light is longer than that of the third incident light. A photodiode is disposed in an upper portion of the epitaxy layer, and a first deep well for reducing pixel-to-pixel talk of the image sensing device is disposed in a lower portion of the epitaxy layer in the second pixel area and the third pixel area, wherein at least a portion of the epitaxy layer in first pixel area does not include the first deep well.
摘要翻译：公开了一种图像感测装置，包括具有导电类型的外延层，包括对应于第一入射光的第一像素区域，对应于第二入射光的第二像素区域和对应于第三入射光的第三像素区域光，其中第一入射光的波长比第二入射光的波长长，第二入射光的波长比第三入射光的波长长。光电二极管设置在外延层的上部，并且用于减少图像感测装置的像素到像素的通话的第一深阱设置在第二像素区域中的外延层的下部和第三像素区域，其中第一像素区域中的外延层的至少一部分不包括第一深孔。

7. 发明申请

US20120032241A1 IMAGE SENSOR 有权
标题翻译：图像传感器
公开(公告)号：US20120032241A1
公开(公告)日：2012-02-09
申请号：US12849027
申请日：2010-08-03
申请人： Fang-Ming Huang , Chung-Wei Chang , Ping-Hung Yin
发明人： Fang-Ming Huang , Chung-Wei Chang , Ping-Hung Yin
IPC分类号： H01L31/10 , H01L31/02
CPC分类号： H01L27/14687 , H01L27/14609 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/1464
摘要： An image sensor includes: a substrate, at least a pixel, and at least a light shield is provided. Wherein the pixel includes a photodiode and at least a transistor, and the transistor is connected to a metal line via a contact. The light shield is positioned around at least one side of the pixel, wherein the light shield is made while forming the contact.
摘要翻译：图像传感器包括：提供至少一个像素的衬底和至少一个遮光罩。其中像素包括光电二极管和至少一个晶体管，并且晶体管经由触点连接到金属线。遮光板围绕像素的至少一侧定位，其中在形成接触的同时形成遮光罩。

8. 发明申请

US20110284984A1 IMAGE SENSOR AND FABRICATING METHOD THEREOF 有权
标题翻译：图像传感器及其制作方法
公开(公告)号：US20110284984A1
公开(公告)日：2011-11-24
申请号：US12781825
申请日：2010-05-18
申请人： Chih-Min Liu , Fang-Ming Huang , Ping-Hung Yin , Kuo-Chan Huang , Chung-Wei Chang
发明人： Chih-Min Liu , Fang-Ming Huang , Ping-Hung Yin , Kuo-Chan Huang , Chung-Wei Chang
IPC分类号： H01L31/0224 , H01L31/18
CPC分类号： H01L27/14636 , H01L27/1464 , H01L27/1469 , H01L2224/48091 , H01L2924/00014
摘要： The present invention provides an image sensor and a fabricating method thereof capable of approaching higher quantum efficiency and reducing cost. The method comprises: providing a substrate; forming a pixel region on a top surface of the substrate; forming an interlayer insulating layer and at least a metal line on the pixel region; forming an isolation carrier layer having a hole array therein on the interlayer insulating layer; grinding a lower surface of the substrate to reduce the thickness of the substrate; placing a plurality of conductors into the hole array to form a plurality of bumps on the isolation carrier layer.
摘要翻译：本发明提供能够接近更高量子效率并降低成本的图像传感器及其制造方法。该方法包括：提供衬底; 在所述基板的顶表面上形成像素区域; 在所述像素区域上形成层间绝缘层和至少金属线; 在层间绝缘层上形成具有孔阵列的隔离载体层; 研磨衬底的下表面以减小衬底的厚度; 将多个导体放置到孔阵列中以在隔离载体层上形成多个凸起。

9. 发明授权

US08367455B2 Image sensor and related fabricating method thereof 有权
标题翻译：图像传感器及其制造方法
公开(公告)号：US08367455B2
公开(公告)日：2013-02-05
申请号：US12790847
申请日：2010-05-30
申请人： Yu-Ping Hu , Chih-Wei Hsiung , Fang-Ming Huang , Chia-Chi Huang , Chung-Wei Chang
发明人： Yu-Ping Hu , Chih-Wei Hsiung , Fang-Ming Huang , Chia-Chi Huang , Chung-Wei Chang
IPC分类号： H01L21/00 , H01L31/0232 , H01L27/14
CPC分类号： H01L27/14627
摘要： A fabricating method of an image sensor includes the steps of: providing a substrate; forming sensing elements on the substrate; forming microlenses on the sensing elements; filling a stuffed material on the microlenses, and air regions are formed in the stuffed material; and forming optical filters on the stuffed material.
摘要翻译：图像传感器的制造方法包括以下步骤：提供基板; 在所述基板上形成感测元件; 在感测元件上形成微透镜; 将填充材料填充在微透镜上，在填充材料中形成空气区域; 并在填充材料上形成光学滤光器。

10. 发明申请

US20120280343A1 BACK-SIDE ILLUMINATION IMAGE SENSOR AND METHOD FOR FABRICATING BACK-SIDE ILLUMINATION IMAGE SENSOR 有权
标题翻译：背面照明图像传感器和背面照明图像传感器的制作方法
公开(公告)号：US20120280343A1
公开(公告)日：2012-11-08
申请号：US13101148
申请日：2011-05-05
申请人： Fang-Ming Huang , Tsung-Chieh Chang
发明人： Fang-Ming Huang , Tsung-Chieh Chang
IPC分类号： H01L31/0232
CPC分类号： H01L27/14627 , H01L27/1464 , H01L27/14685 , H01L27/14689
摘要： A method for fabricating a back-side illumination image sensor includes: implanting a first type of dopant into an epitaxial layer disposed over a first side of a substrate layer to form a first dopant layer in a first side of the epitaxial layer; adhering a carry layer over the first dopant layer for carrying the substrate layer; grinding a second side of the substrate layer for exposing a second side of the epitaxial layer; implanting the first type of dopant into the epitaxial layer from the second side of the epitaxial layer to form a second dopant layer in the second side of the epitaxial layer; forming at least one metal layer over the second dopant layer after forming the second dopant layer in the second side of the epitaxial layer; removing the carry layer; and forming a color filtering module over the first dopant layer.
摘要翻译：一种制造背面照明图像传感器的方法，包括：将第一类型的掺杂剂注入设置在衬底层的第一侧上的外延层中，以在外延层的第一侧中形成第一掺杂剂层; 在第一掺杂剂层上粘附载体层以承载基底层; 研磨衬底层的第二面以暴露外延层的第二面; 从所述外延层的第二侧将所述第一类型的掺杂剂注入到所述外延层中，以在所述外延层的第二侧中形成第二掺杂剂层; 在所述外延层的第二侧中形成所述第二掺杂剂层之后，在所述第二掺杂剂层上形成至少一个金属层; 去除携带层; 以及在所述第一掺杂剂层上形成滤色模块。

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