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1. 发明授权

US06440857B1 Two-step CMP method and employed polishing compositions 失效
标题翻译：两步CMP方法和使用的抛光组合物
公开(公告)号：US06440857B1
公开(公告)日：2002-08-27
申请号：US09768339
申请日：2001-01-25
申请人： Yuan-Hsin Li , Ming-Shin Tsai , Chien-Hua Chiu , Bau-Tong Dai , Ting-Chen Hu
发明人： Yuan-Hsin Li , Ming-Shin Tsai , Chien-Hua Chiu , Bau-Tong Dai , Ting-Chen Hu
IPC分类号： H01L214763
CPC分类号： H01L21/7684 , C09G1/02 , H01L21/3212
摘要： The present invention discloses a two-step CMP method and employed polishing compositions. In the first step, a first polishing slurry is provided to selectively polish the Al-alloy layer. Next, a second polishing slurry is provided to selectively polish the barrier layer. Accordingly, undesired surface non-planarity after the CMP process, such as metal dishing and corrosion of dielectric layers with complicated pattern geometry, can be avoided, and thus the planarization of wafer surfaces can be achieved.
摘要翻译：本发明公开了两步CMP方法并使用了抛光组合物。在第一步骤中，提供第一抛光浆料以选择性地抛光Al合金层。接下来，提供第二抛光浆料以选择性地抛光阻挡层。因此，可以避免在CMP工艺之后的不期望的表面非平面性，例如具有复杂图案几何形状的介电层的金属凹陷和腐蚀，从而可以实现晶片表面的平坦化。

2. 发明授权

US08012307B2 Separating device and method thereof 失效
标题翻译：分离装置及其方法
公开(公告)号：US08012307B2
公开(公告)日：2011-09-06
申请号：US12539811
申请日：2009-08-12
申请人： Yuan-Hsin Li , Chiu-Feng Yang
发明人： Yuan-Hsin Li , Chiu-Feng Yang
IPC分类号： B32B38/10
CPC分类号： H01L21/67706 , H01L21/67011 , H01L21/67028 , H01L21/6776 , Y10S156/93 , Y10T156/1111 , Y10T156/1189 , Y10T156/1933 , Y10T156/1972
摘要： A separating device for separating an electronic main body from a substrate bonded thereto comprises a platform, a conveying section, a dissolving section, a cleaning section, and a first partition plate. The conveying section is disposed on the platform for moving the electronic main body and the substrate forward. The dissolving section is disposed on the platform for spraying a solvent onto the bonded electronic main body and substrate. The cleaning section is also disposed on the platform for cleaning the electronic main body. The first partition plate is located between the dissolving section and the cleaning section and has at least one first slot, which allows only the electronic main body but not the substrate to pass therethrough, so that the electronic main body is separated from the substrate at the first partition plate. A method for separating the electronic main body and the substrate is also provided.
摘要翻译：用于将电子主体与从其接合的基板分离的分离装置包括平台，输送部分，溶解部分，清洁部分和第一分隔板。输送部设置在平台上，用于向前移动电子主体和基板。溶解部设置在平台上，用于将溶剂喷射到粘合的电子主体和基板上。清洁部也设置在平台上用于清洁电子主体。第一分隔板位于溶解部分和清洁部分之间，并且具有仅允许电子主体而不是基板通过的至少一个第一狭槽，使得电子主体与基板在第一分隔板。还提供了一种用于分离电子主体和基板的方法。

3. 发明申请

US20060016786A1 Method and apparatus for removing SiC or low k material film 审中-公开
标题翻译：用于去除SiC或低k材料膜的方法和装置
公开(公告)号：US20060016786A1
公开(公告)日：2006-01-26
申请号：US10899594
申请日：2004-07-26
申请人： Bing-Yue Tsui , Kuo-Lung Fang , Yuan-Hsin Li , Chih-Hung Wu
发明人： Bing-Yue Tsui , Kuo-Lung Fang , Yuan-Hsin Li , Chih-Hung Wu
IPC分类号： B44C1/22 , H01L21/306
CPC分类号： H01L21/02164 , H01L21/02079 , H01L21/0223 , H01L21/02255 , H01L21/31111 , H01L21/31116 , H01L21/31658
摘要： The present invention disclosed a method and apparatus for removing a SiC or a low k dielectric film, wherein the SiC or low k dielectric film is deposited on a substrate. The method comprising: Process the low k dielectric film or SiC film with high temperature oxidation, such as wet oxidation or dry oxidation, to transform the film into an oxide film layer, then remove the oxide film layer by wet etching. The present invention also disclosed an apparatus to perform the process, comprising: a high temperature processing unit such as a high temperature furnace, and a wet etching unit such as a wet bench or a single wafer spin etching processor. These units may form as a single apparatus, a cluster tool or separate tools.
摘要翻译：本发明公开了一种用于去除SiC或低k电介质膜的方法和装置，其中SiC或低k电介质膜沉积在衬底上。该方法包括：通过湿氧化或干氧化等高温氧化处理低k电介质膜或SiC膜，将膜转变成氧化膜层，然后通过湿蚀刻除去氧化物膜层。本发明还公开了一种执行该方法的装置，包括：诸如高温炉的高温处理单元，湿式工作台或单晶片旋转蚀刻处理器等湿蚀刻单元。这些单元可以形成为单个设备，集群工具或单独的工具。

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