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1. 发明授权

US5872794A Flash EPROM control with embedded pulse timer and with built-in signature analysis 失效
标题翻译：闪存EPROM控制与嵌入式脉冲定时器和内置签名分析
公开(公告)号：US5872794A
公开(公告)日：1999-02-16
申请号：US967206
申请日：1997-10-29
申请人： Brian E. Cook , Jeffery T. Richardson , Yu-Ying Jackson Leung
发明人： Brian E. Cook , Jeffery T. Richardson , Yu-Ying Jackson Leung
IPC分类号： G11C29/20 , G11C29/40 , G01R31/28
CPC分类号： G11C29/40 , G11C29/20
摘要： Built-In-Logic-Block-Observation registers BILBO are coupled to the output of a Control-Read-Only-Memory CROM in the write-state-machine of a flash EPROM. The Built-In-Logic-Block-Observation registers BILBO include master/slave latches M/SL, shadow latches SHL, and other logic circuitry that enable the various modes of operation required for pulse timing and for signature analysis. During operation a pre-defined FLASH command sequence requests a Control-Read-Only-Memory CROM signature analysis that executes a set of instructions causing the Built-In-Logic-Block-Observation registers BILBO to be placed in the Multiple-Input-Signature-Register Mode and that steps through the Control-Read-Only-Memory CROM until all valid addresses have been evaluated. The resultant Control-Read-Only-Memory CROM signature is then scanned out and verified. The invention eliminates the need for a separate stand-alone Linear-Feedback-Shift-Register LFSR used for pulse timing. The contents of the Control-Read-Only-Memory CROM are verified without the necessity for time-consuming scanning-out of each word.
摘要翻译：内置逻辑块观测寄存器BILBO耦合到闪存EPROM的写状态机中的控制只读存储器CROM的输出。内置逻辑块观测寄存器BILBO包括主/从锁存器M / SL，阴影锁存器SHL和其他逻辑电路，可实现脉冲定时和签名分析所需的各种操作模式。在操作期间，预定义的FLASH命令序列请求执行一组指令的控制只读存储器CROM签名分析，使得内置逻辑块观测寄存器BILBO被放置在多输入签名 - 注册模式，并通过控制只读存储器CROM进行步骤，直到所有有效地址已被评估为止。然后扫描出结果并验证所得到的控制只读存储器CROM签名。本发明消除了对用于脉冲定时的独立线性反馈移位寄存器LFSR的需要。验证控制只读存储器CROM的内容，而不需要耗费每个字的扫描。

2. 发明授权

US5675546A On-chip automatic procedures for memory testing 失效
标题翻译：片上自动程序进行内存测试
公开(公告)号：US5675546A
公开(公告)日：1997-10-07
申请号：US659811
申请日：1996-06-07
申请人： Yu-Ying Jackson Leung
发明人： Yu-Ying Jackson Leung
IPC分类号： G01R31/28 , G01R31/30 , G11C29/02 , G11C29/06 , G11C29/16 , G11C29/50 , G11C7/00 , G11C29/00
CPC分类号： G11C29/021 , G11C29/02 , G11C29/16 , G11C29/50 , G06F2201/88 , G11C16/04 , G11C2029/5004
摘要： The on-chip endurance test (Autocycle) and the parametric characterization test (Auto VccMax/Min) of this invention save test time and hardware by performance automatically on the memory chip upon transmittal of a single command (CONTROL CODE) to the chip from the tester. The automated test procedures of this invention run faster because the on-chip tester requires fewer externally issued commands (CONTROL CODEs) and requires fewer external status checks. The procedures of this invention permit the external tester to have a smaller number of input/output pins (CONTROL), decreasing the cost of the external test hardware. Specifically, the endurance test (Autocycle), automatically cycles the memory chip through any combination of programming, erasing, and/or compaction operations until either a failure has been detected or the required number of the test cycles has been completed. The parametric characterization test (AutoVccMax/Min) determines automatically the maximum supply voltage and/or the minimum supply voltage for data operation of the memory chip. The endurance test (Autocycle) uses a microsequencer (MC) and an on-chip built-in-logic-block-observation (BILBO) register to check information in a control-read-only memory (CROM). Output data from the control-read-only memory is latched in a BILBO register enhanced for use as a counter for large count. During the endurance test (Autocycle), the microsequencer (MC), using enhanced counter, monitors the number of on-chip controlled endurance test cycles. During the parametric characterization test (AutoVccMax/Min), an on-chip digital-analog converter (DAC) causes stepped changes in the supply voltage (Vcc) furnished to both the data cells (10) and the reference cells (10) of the memory.
摘要翻译：本发明的片上耐久性测试（Autocycle）和参数化特性测试（Auto VccMax / Min）在将单个命令（控制代码）传送到芯片上时，可以在存储器芯片上自动保存测试时间和硬件测试仪本发明的自动测试程序运行速度更快，因为片上测试仪需要更少的外部发出的命令（控制代码），并且需要更少的外部状态检查。本发明的程序允许外部测试仪具有较少数量的输入/输出引脚（CONTROL），降低外部测试硬件的成本。具体来说，耐久性测试（Autocycle）通过编程，擦除和/或压缩操作的任何组合自动循环存储器芯片，直到检测到故障或已经完成所需的测试周期数。参数化特性测试（AutoVccMax / Min）自动确定存储器芯片的数据操作的最大电源电压和/或最小电源电压。耐力测试（Autocycle）使用微定序器（MC）和片上内置逻辑块观测（BILBO）寄存器来检查控制只读存储器（CROM）中的信息。来自控制只读存储器的输出数据被锁存在增强的BILBO寄存器中，用作大计数器的计数器。在耐力测试（Autocycle）期间，使用增强型计数器的微定序器（MC）监控片上受控耐久性测试周期的数量。在参数特征测试（AutoVccMax / Min）期间，片上数模转换器（DAC）引起提供给数据单元（10）和参考单元（10）的电源电压（Vcc）的阶梯式变化记忆。

3. 发明授权

US5719880A On-chip operation for memories 失效
标题翻译：记忆片上的片上操作
公开(公告)号：US5719880A
公开(公告)日：1998-02-17
申请号：US710606
申请日：1996-09-20
申请人： Yu-Ying Jackson Leung
发明人： Yu-Ying Jackson Leung
IPC分类号： G11C16/06 , G11C29/16 , G06F11/00
CPC分类号： G11C29/16
摘要： The memory control this invention includes a microprogram-read-only-memory (CROM) containing micro-instructions for operation of an integrated-circuit memory, a program counter multiplexer (PCM) to select instructions from the control-read-only-memory, a micro-instruction decoder with BILBO control (MID/BC), a test input multiplexer (TIM) to test control signals, an optional status output register (SOR) to generate control signals, and a subroutine stack (SS) to allow function calls. A program counter (PC) takes an index signal from the micro-instruction decoder with BILBO control (MID/BC) and a signal from the program counter multiplexer (PCM), and from those signal, generates a next microcode address. Complex program, erase, and compaction instructions for the integrated-circuit memory are implemented using a relatively small number of control-read-only-memory locations and using a relatively small surface area on the memory chip. Control instructions are easily modified to compensate for process and structure enhancements are made during the production lifetime of an integrated-circuit memory.
摘要翻译：本发明的存储器控制包括包含用于集成电路存储器的操作的微指令的微程序只读存储器（CROM），用于从控制只读存储器选择指令的程序计数器多路复用器（PCM）具有BILBO控制（MID / BC）的微指令解码器，用于测试控制信号的测试输入多路复用器（TIM），用于产生控制信号的可选状态输出寄存器（SOR）以及允许功能调用的子程序堆栈。程序计数器（PC）通过BILBO控制（MID / BC）和来自程序计数器多路复用器（PCM）的信号从微指令解码器获取索引信号，并从那些信号产生下一个微代码地址。集成电路存储器的复杂程序，擦除和压缩指令使用相对较少数量的控制只读存储器位置并使用存储器芯片上相对较小的表面积来实现。控制指令易于修改以补偿在集成电路存储器的生产寿命期间进行的处理和结构增强。

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