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    • 3. 发明授权
    • Regulator capable of rapidly recovering an output voltage and a load current thereof
    • 能够迅速恢复输出电压及其负载电流的调节器
    • US08773089B2
    • 2014-07-08
    • US13099375
    • 2011-05-03
    • Yu-Sheng LaiFeng-Chia ChangYu-Chou Ke
    • Yu-Sheng LaiFeng-Chia ChangYu-Chou Ke
    • G05F1/00G05F1/563
    • G05F1/563
    • A regulator includes a first amplifier, a second amplifier, a current control circuit, a first P-type metal-oxide-semiconductor transistor, a second P-type metal-oxide-semiconductor transistor, and a feedback circuit. The current control circuit includes a controller and at least one switch, and a second terminal of the first P-type metal-oxide-semiconductor transistor is coupled to a second terminal of the second P-type metal-oxide-semiconductor transistor. The regulator utilizes the controller to turn off the at least one switch during operation of the regulator in a light load mode, and the regulator utilizes the controller to turn on the at least one switch in turn when the regulator changes from the light load mode to a heavy load mode. Thus, the regulator can quickly recover a load current in the heavy load mode.
    • 调节器包括第一放大器,第二放大器,电流控制电路,第一P型金属氧化物半导体晶体管,第二P型金属氧化物半导体晶体管和反馈电路。 电流控制电路包括控制器和至少一个开关,第一P型金属氧化物半导体晶体管的第二端子耦合到第二P型金属氧化物半导体晶体管的第二端子。 调节器利用控制器在轻负载模式下操作调节器期间关闭至少一个开关,并且当调节器从轻负载模式改变为轻负载模式时,调节器利用控制器依次打开至少一个开关 重负载模式。 因此,调节器可以在重负载模式下快速恢复负载电流。
    • 4. 发明申请
    • REGULATOR
    • 调节器
    • US20120229106A1
    • 2012-09-13
    • US13099375
    • 2011-05-03
    • Yu-Sheng LaiFeng-Chia ChangYu-Chou Ke
    • Yu-Sheng LaiFeng-Chia ChangYu-Chou Ke
    • G05F1/10
    • G05F1/563
    • A regulator includes a first amplifier, a second amplifier, a current control circuit, a first P-type metal-oxide-semiconductor transistor, a second P-type metal-oxide-semiconductor transistor, and a feedback circuit. The current control circuit includes a controller and at least one switch, and a second terminal of the first P-type metal-oxide-semiconductor transistor is coupled to a second terminal of the second P-type metal-oxide-semiconductor transistor. The regulator utilizes the controller to turn off the at least one switch during operation of the regulator in a light load mode, and the regulator utilizes the controller to turn on the at least one switch in turn when the regulator changes from the light load mode to a heavy load mode. Thus, the regulator can quickly recover a load current in the heavy load mode.
    • 调节器包括第一放大器,第二放大器,电流控制电路,第一P型金属氧化物半导体晶体管,第二P型金属氧化物半导体晶体管和反馈电路。 电流控制电路包括控制器和至少一个开关,第一P型金属氧化物半导体晶体管的第二端子耦合到第二P型金属氧化物半导体晶体管的第二端子。 调节器利用控制器在轻负载模式下操作调节器期间关闭至少一个开关,并且当调节器从轻负载模式改变为轻负载模式时,调节器利用控制器依次打开至少一个开关 重负载模式。 因此,调节器可以在重负载模式下快速恢复负载电流。
    • 5. 发明申请
    • VOLTAGE HOLD CIRCUIT
    • 电压保持电路
    • US20120169379A1
    • 2012-07-05
    • US13050969
    • 2011-03-18
    • Yu-Sheng LaiFeng-Chia Chang
    • Yu-Sheng LaiFeng-Chia Chang
    • G11C27/02
    • H03L7/10H03L7/0812H03L2207/08
    • A voltage hold circuit includes four switches, an operational amplifier and a capacitor. By turning the switches on and off, the operational amplifier functions as a unity-gain buffer. In the normal operation mode, the positive input end of the operational amplifier is coupled to a node, and the output end of the operational amplifier is coupled to the capacitor. Thus the voltage of the capacitor is equal to the voltage of the node. In the power off mode, the positive input end of the operational amplifier is coupled d to the capacitor, and the output end of the operational amplifier is coupled to the node. Thus the voltage of the node is equal to the voltage of the capacitor. Therefore, the voltage hold circuit is able to hold the voltage of the node in the power down state.
    • 电压保持电路包括四个开关,运算放大器和电容器。 通过打开和关闭开关,运算放大器用作单位增益缓冲器。 在正常工作模式下,运算放大器的正输入端耦合到一个节点,运算放大器的输出端耦合到电容器。 因此,电容器的电压等于节点的电压。 在断电模式下,运算放大器的正输入端耦合到电容器,运算放大器的输出端耦合到节点。 因此,节点的电压等于电容器的电压。 因此,电压保持电路能够将节点的电压保持在掉电状态。
    • 6. 发明授权
    • Voltage hold circuit
    • 电压保持电路
    • US08330513B2
    • 2012-12-11
    • US13050969
    • 2011-03-18
    • Yu-Sheng LaiFeng-Chia Chang
    • Yu-Sheng LaiFeng-Chia Chang
    • H03L7/06
    • H03L7/10H03L7/0812H03L2207/08
    • A voltage hold circuit includes four switches, an operational amplifier and a capacitor. By turning the switches on and off, the operational amplifier functions as a unity-gain buffer. In the normal operation mode, the positive input end of the operational amplifier is coupled to a node, and the output end of the operational amplifier is coupled to the capacitor. Thus the voltage of the capacitor is equal to the voltage of the node. In the power off mode, the positive input end of the operational amplifier is coupled d to the capacitor, and the output end of the operational amplifier is coupled to the node. Thus the voltage of the node is equal to the voltage of the capacitor. Therefore, the voltage hold circuit is able to hold the voltage of the node in the power down state.
    • 电压保持电路包括四个开关,运算放大器和电容器。 通过打开和关闭开关,运算放大器用作单位增益缓冲器。 在正常工作模式下,运算放大器的正输入端耦合到一个节点,运算放大器的输出端耦合到电容器。 因此,电容器的电压等于节点的电压。 在断电模式下,运算放大器的正输入端耦合到电容器,运算放大器的输出端耦合到节点。 因此,节点的电压等于电容器的电压。 因此,电压保持电路能够将节点的电压保持在掉电状态。
    • 9. 发明申请
    • METHOD FOR MAKING DUAL SILICIDE AND GERMANIDE SEMICONDUCTORS
    • 制备双硅氧烷和锗化物半导体的方法
    • US20120190163A1
    • 2012-07-26
    • US13107679
    • 2011-05-13
    • Szu-Hung ChenHung-Min ChenYu-Sheng LaiWen-Fa WuFu-Liang Yang
    • Szu-Hung ChenHung-Min ChenYu-Sheng LaiWen-Fa WuFu-Liang Yang
    • H01L21/336
    • H01L29/6653H01L29/665H01L29/7833
    • A method for making a dual silicide or germanide semiconductor comprises steps of providing a semiconductor substrate, forming a gate, forming source/drain regions, forming a first silicide, reducing spacers thickness and forming a second silicide. Forming a gate comprises forming an insulating layer over the semiconductor substrate, and forming the gate over the insulating layer. Forming source/drain regions comprises forming lightly doped source/drain regions in the semiconductor substrate adjacent to the insulating layer, forming spacers adjacent to the gate and over part of the lightly doped source/drain regions, and forming heavily doped source/drain regions in the semiconductor substrate. The first silicide is formed on an exposed surface of lightly and heavily doped source/drain regions. The second silicide is formed on an exposed surface of lightly doped source/drain regions. A first germanide and second germanide may replace the first silicide and the second silicide.
    • 制造双硅化物或锗化硅半导体的方法包括提供半导体衬底,形成栅极,形成源极/漏极区域,形成第一硅化物,减少间隔物厚度和形成第二硅化物的步骤。 形成栅极包括在半导体衬底上形成绝缘层,并在绝缘层上形成栅极。 形成源极/漏极区域包括在与绝缘层相邻的半导体衬底中形成轻掺杂源极/漏极区域,在栅极和轻掺杂源极/漏极区域的一部分上形成间隔物,并且形成重掺杂的源极/漏极区域 半导体衬底。 第一硅化物形成在轻掺杂和重掺杂的源/漏区的暴露表面上。 第二硅化物形成在轻掺杂源极/漏极区域的暴露表面上。 第一个锗化物和第二个锗化物可以替代第一个硅化物和第二个硅化物。
    • 10. 发明授权
    • System and method for estimating dynamic quantities
    • 用于估计动态量的系统和方法
    • US07557310B2
    • 2009-07-07
    • US11456864
    • 2006-07-12
    • Yu-Sheng LaiJe-Wei Liang
    • Yu-Sheng LaiJe-Wei Liang
    • G01G15/00G01G19/00
    • G01G23/3707G06Q10/087G06Q10/0875
    • A system and method for estimating dynamic quantities is provided. The system includes an electronic identification recognition apparatus, a weight measuring apparatus, and a computing apparatus. The electronic identification recognition apparatus can recognize an electronic identification for a corresponding item placed into the system, and the weight measuring apparatus measures a total weight of all items that it carries. The computing apparatus is coupled to the weight measuring apparatus and the electronic identification recognition apparatus, for receiving the total weight, such that the quantity of the item can be estimated and recorded by using the total weights obtained respectively before and after the item is stored or removed and a recognition result from the electronic identification recognition apparatus.
    • 提供了一种用于估计动态数量的系统和方法。 该系统包括电子识别识别装置,重量测量装置和计算装置。 电子识别识别装置可以识别放置在系统中的相应物品的电子标识,重量测量装置测量其携带的所有物品的总重量。 计算装置耦合到权重测量装置和电子识别识别装置,用于接收总重量,使得可以通过使用分别在项目存储之前和之后获得的总权重来估计和记录该项目的数量,或者 去除和电子识别识别装置的识别结果。