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1. 发明授权

US08890239B2 Semiconductor device and method for producing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08890239B2
公开(公告)日：2014-11-18
申请号：US13884221
申请日：2011-07-26
申请人： Seiji Yaegashi , Makoto Kiyama , Mitsunori Yokoyama , Kazutaka Inoue , Masaya Okada , Yu Saitoh
发明人： Seiji Yaegashi , Makoto Kiyama , Mitsunori Yokoyama , Kazutaka Inoue , Masaya Okada , Yu Saitoh
IPC分类号： H01L29/66 , H01L29/778 , H01L29/417 , H01L29/78 , H01L29/06 , H01L29/423 , H01L29/20
CPC分类号： H01L29/7802 , H01L29/0649 , H01L29/0657 , H01L29/2003 , H01L29/41741 , H01L29/4236 , H01L29/66462 , H01L29/66712 , H01L29/7788 , H01L29/7789
摘要： In a vertical semiconductor device including a channel in an opening, a semiconductor device whose high-frequency characteristics can be improved and a method for producing the semiconductor device are provided. The semiconductor device includes n-type GaN-based drift layer 4/p-type GaN-based barrier layer 6/n-type GaN-based contact layer 7. An opening 28 extends from a top layer and reaches the n-type GaN-based drift layer. The semiconductor device includes a regrown layer 27 located so as to cover the opening, the regrown layer 27 including an electron drift layer 22 and an electron supply layer 26, a source electrode S, a drain electrode D, and a gate electrode G located on the regrown layer. Assuming that the source electrode serving as one electrode and the drain electrode serving as the other electrode constitute a capacitor, the semiconductor device includes a capacitance-decreasing structure that decreases the capacitance of the capacitor.
摘要翻译：在包括开口中的沟道的垂直半导体器件中，提供了可以提高其高频特性的半导体器件和制造半导体器件的方法。半导体器件包括n型GaN基漂移层4 / p型GaN基阻挡层6 / n型GaN基接触层7.开口28从顶层延伸并到达n型GaN- 基漂移层。半导体器件包括以覆盖开口的方式定位的再生长层27，包括电子漂移层22和电子供给层26的再生长层27，源电极S，漏电极D和位于再生长层。假设用作一个电极的源极和用作另一个电极的漏电极构成电容器，则半导体器件包括降低电容器的电容的电容减小结构。

2. 发明申请

US20130181226A1 SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20130181226A1
公开(公告)日：2013-07-18
申请号：US13822591
申请日：2011-07-06
申请人： Yu Saitoh , Masaya Okada , Masaki Ueno , Makoto Kiyama
发明人： Yu Saitoh , Masaya Okada , Masaki Ueno , Makoto Kiyama
IPC分类号： H01L29/778 , H01L29/66
CPC分类号： H01L29/7788 , H01L21/0254 , H01L21/02573 , H01L21/0262 , H01L21/3006 , H01L29/2003 , H01L29/4238 , H01L29/66431 , H01L29/66462 , H01L29/7789
摘要： There are provided a semiconductor device in which a drain leak current can be reduced in the transistor operation while high vertical breakdown voltage is achieved and a method for producing the semiconductor device. In the semiconductor device, an opening 28 that extends from an n+-type contact layer 8 and reaches an n-type drift layer 4 through a p-type barrier layer 6 is formed. The semiconductor device includes a regrown layer 27 located so as to cover portions of the p-type barrier layer 6 and the like that are exposed to the opening, the regrown layer 27 including an undoped GaN channel layer 22 and a carrier supply layer 26; an insulating layer 9 located so as to cover the regrown layer 27; and a gate electrode G located on the insulating layer 9. In the p-type barrier layer, the Mg concentration A (cm−3)and the hydrogen concentration B (cm−3) satisfy 0.1
摘要翻译：提供了一种半导体器件，其中在实现高的垂直击穿电压的同时，在晶体管操作中可以减小漏极漏电流，以及制造半导体器件的方法。在半导体器件中，形成从n +型接触层8延伸并通过p型阻挡层6到达n型漂移层4的开口28。半导体器件包括再生长层27，其被覆盖以覆盖暴露于开口的p型阻挡层6等的部分，再生长层27包括未掺杂的GaN沟道层22和载流子供给层26; 定位成覆盖再生长层27的绝缘层9; 和位于绝缘层9上的栅电极G.在p型阻挡层中，Mg浓度A（cm-3）和氢浓度B（cm-3）满足0.1

3. 发明申请

US20140004668A1 METHOD FOR MANUFACTURING NITRIDE ELECTRONIC DEVICES 审中-公开
标题翻译：制造硝酸电子器件的方法
公开(公告)号：US20140004668A1
公开(公告)日：2014-01-02
申请号：US14006307
申请日：2011-04-05
申请人： Yu Saitoh , Masaya Okada , Makoto Kiyama
发明人： Yu Saitoh , Masaya Okada , Makoto Kiyama
IPC分类号： H01L29/66
CPC分类号： H01L29/66431 , H01L21/02458 , H01L21/0254 , H01L21/02579 , H01L21/02609 , H01L21/0262 , H01L29/2003 , H01L29/4236 , H01L29/66462 , H01L29/7788 , H01L29/7789
摘要： A substrate product is disposed in a growth furnace at time t0, and the substrate temperature is then raised to 950° C. At time t3 after the substrate temperature is sufficiently stable, trimethyl gallium and ammonia are supplied to the growth furnace, to grow an i-GaN film. The substrate temperature reaches 1080° C. at time t5. At time t6 after the substrate temperature is sufficiently stable, trimethyl gallium, trimethyl aluminum and ammonia are supplied to the growth furnace, to grow an i-AlGaN film. Supply of trimethyl gallium and trimethyl aluminum is stopped at time t7 to discontinue film deposition. Quickly thereafter, supply of ammonia and hydrogen to the growth furnace is stopped and supply of nitrogen is initiated, to change the atmosphere of ammonia and hydrogen in a growth furnace chamber to a nitrogen atmosphere. After formation of the nitrogen atmosphere, the substrate temperature starts being lowered at time t8.
摘要翻译：在时间t0将基板产物置于生长炉中，然后将基板温度升至950℃。在衬底温度足够稳定之后的时间t3，将三甲基镓和氨供应到生长炉中，以生长 i-GaN膜。衬底温度在时间t5达到1080℃。在衬底温度足够稳定后的时间t6，将三甲基镓，三甲基铝和氨供给到生长炉中，以生长i-AlGaN膜。在时间t7停止供应三甲基镓和三甲基铝以中断膜沉积。此后，停止向生长炉供应氨和氢，并开始供应氮气，以将生长炉室中的氨和氢气气氛改变为氮气氛。在形成氮气氛后，在时间t8开始降低基板温度。

4. 发明申请

US20130234156A1 SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20130234156A1
公开(公告)日：2013-09-12
申请号：US13885131
申请日：2011-10-17
申请人： Masaya Okada , Makoto Kiyama , Yu Saitoh , Seiji Yaegashi , Mitsunori Yokoyama , Kazutaka Inoue
发明人： Masaya Okada , Makoto Kiyama , Yu Saitoh , Seiji Yaegashi , Mitsunori Yokoyama , Kazutaka Inoue
IPC分类号： H01L29/78 , H01L29/66
CPC分类号： H01L29/7813 , H01L29/2003 , H01L29/41766 , H01L29/42368 , H01L29/66462 , H01L29/66734 , H01L29/7788 , H01L29/7789 , H01L29/78
摘要： It is an object to improve the breakdown voltage characteristics of a vertical semiconductor device having an opening and including a channel formed of two-dimensional electron gas in the opening. A GaN-based stacked layer 15 includes n−-type GaN drift layer 4/p-type GaN barrier layer 6/n+-type GaN contact layer 7. An opening 28 extends from a top layer and reaches the n−-type GaN drift layer 4. The semiconductor device includes a regrown layer 27 located so as to cover a wall surface and a bottom portion of the opening, the regrown layer 27 including an electron drift layer 22 and an electron source layer 26, a source electrode S located around the opening, a gate electrode G located on the regrown layer in the opening, and a bottom insulating layer 37 located in the bottom portion of the opening.
摘要翻译：本发明的目的是提高具有开口的垂直半导体器件的击穿电压特性，并且在开口中包括由二维电子气形成的沟道。 GaN基叠层15包括n型GaN漂移层4 / p型GaN势垒层6 / n +型GaN接触层7.开口28从顶层延伸并到达n型GaN漂移该半导体器件包括重新生长层27，其被覆盖以覆盖开口的壁表面和底部，再生长层27包括电子漂移层22和电子源层26，源电极S位于开口，位于开口中的再生长层上的栅极电极G和位于开口底部的底部绝缘层37。

5. 发明授权

US08969920B2 Vertical GaN-based semiconductor device 有权
标题翻译：垂直GaN基半导体器件
公开(公告)号：US08969920B2
公开(公告)日：2015-03-03
申请号：US13824248
申请日：2011-07-06
申请人： Makoto Kiyama , Yu Saitoh , Masaya Okada , Masaki Ueno , Seiji Yaegashi , Kazutaka Inoue , Mitsunori Yokoyama
发明人： Makoto Kiyama , Yu Saitoh , Masaya Okada , Masaki Ueno , Seiji Yaegashi , Kazutaka Inoue , Mitsunori Yokoyama
IPC分类号： H01L29/66 , H01L29/778 , H01L29/20 , H01L29/423
CPC分类号： H01L29/778 , H01L29/2003 , H01L29/4236 , H01L29/66431 , H01L29/66462 , H01L29/7788 , H01L29/7789
摘要： A vertical semiconductor device in which pinch-off characteristics and breakdown voltage characteristics can be stably improved by fixing the electric potential of a p-type GaN barrier layer with certainty is provided. The semiconductor device includes a GaN-based stacked layer having an opening, a regrown layer including a channel located so as to cover a wall surface of the opening, an n+-type source layer that is in ohmic contact with the source electrode, a p-type GaN barrier layer, and a p+-type GaN-based supplementary layer located between the p-type GaN barrier layer and the n+-type source layer. The p+-type GaN-based supplementary layer and the n+-type source layer form a tunnel junction to fix the electric potential of the p-type GaN barrier layer at a source potential.
摘要翻译：提供了通过确定地固定p型GaN势垒层的电位可以稳定地提高夹断特性和击穿电压特性的垂直半导体器件。半导体器件包括具有开口的GaN基层叠层，包含覆盖开口壁面的沟道的再生长层，与源电极欧姆接触的n +型源极，p 位于p型GaN势垒层和n +型源极层之间的p +型GaN基辅助层。 p +型GaN基辅助层和n +型源极层形成隧道结，以将p型GaN阻挡层的电位固定在源极电位。

6. 发明授权

US08941174B2 Semiconductor device and method for producing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08941174B2
公开(公告)日：2015-01-27
申请号：US13885131
申请日：2011-10-17
申请人： Masaya Okada , Makoto Kiyama , Yu Saitoh , Seiji Yaegashi , Mitsunori Yokoyama , Kazutaka Inoue
发明人： Masaya Okada , Makoto Kiyama , Yu Saitoh , Seiji Yaegashi , Mitsunori Yokoyama , Kazutaka Inoue
IPC分类号： H01L29/66 , H01L29/78 , H01L29/778 , H01L29/20 , H01L29/417 , H01L29/423
CPC分类号： H01L29/7813 , H01L29/2003 , H01L29/41766 , H01L29/42368 , H01L29/66462 , H01L29/66734 , H01L29/7788 , H01L29/7789 , H01L29/78
摘要： It is an object to improve the breakdown voltage characteristics of a vertical semiconductor device having an opening and including a channel formed of two-dimensional electron gas in the opening. A GaN-based stacked layer 15 includes n−-type GaN drift layer 4/p-type GaN barrier layer 6/n+-type GaN contact layer 7. An opening 28 extends from a top layer and reaches the n−-type GaN drift layer 4. The semiconductor device includes a regrown layer 27 located so as to cover a wall surface and a bottom portion of the opening, the regrown layer 27 including an electron drift layer 22 and an electron source layer 26, a source electrode S located around the opening, a gate electrode G located on the regrown layer in the opening, and a bottom insulating layer 37 located in the bottom portion of the opening.
摘要翻译：本发明的目的是提高具有开口的垂直半导体器件的击穿电压特性，并且在开口中包括由二维电子气形成的沟道。 GaN基叠层15包括n型GaN漂移层4 / p型GaN势垒层6 / n +型GaN接触层7.开口28从顶层延伸并到达n型GaN漂移该半导体器件包括重新生长层27，其被覆盖以覆盖开口的壁表面和底部，再生长层27包括电子漂移层22和电子源层26，源电极S位于开口，位于开口中的再生长层上的栅极电极G和位于开口底部的底部绝缘层37。

7. 发明授权

US08896058B2 Semiconductor device and method for producing same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08896058B2
公开(公告)日：2014-11-25
申请号：US13884229
申请日：2011-10-05
申请人： Masaya Okada , Makoto Kiyama , Yu Saitoh , Seiji Yaegashi , Mitsunori Yokoyama , Kazutaka Inoue
发明人： Masaya Okada , Makoto Kiyama , Yu Saitoh , Seiji Yaegashi , Mitsunori Yokoyama , Kazutaka Inoue
IPC分类号： H01L29/66 , H01L29/778 , H01L29/78 , H01L29/423 , H01L29/40 , H01L29/417 , H01L29/20
CPC分类号： H01L29/7827 , H01L29/2003 , H01L29/407 , H01L29/41766 , H01L29/4236 , H01L29/66462 , H01L29/66666 , H01L29/7788 , H01L29/7789
摘要： It is an object to improve the breakdown voltage characteristics of a vertical semiconductor device having an opening and including a channel formed of two-dimensional electron gas in the opening. The vertical semiconductor device includes a GaN-based stacked layer 15 having an opening 28 and the GaN-based stacked layer 15 includes n-type GaN-based drift layer 4/p-type GaN-based barrier layer 6/n-type GaN-based contact layer 7. The vertical semiconductor device includes a regrown layer 27 located so as to cover the opening, the regrown layer 27 including an electron drift layer 22 and an electron supply layer 26, a source electrode S, and a gate electrode G located on the regrown layer. The gate electrode G covers a portion having a length corresponding to the thickness of the p-type GaN-based barrier layer and is terminated at a position on the wall surface, the position being away from the bottom portion of the opening.
摘要翻译：本发明的目的是提高具有开口的垂直半导体器件的击穿电压特性，并且在开口中包括由二维电子气形成的沟道。垂直半导体器件包括具有开口28的GaN基叠层15，GaN基叠层15包括n型GaN基漂移层4 / p型GaN基阻挡层6 / n型GaN- 垂直半导体器件包括覆盖开口的再生长层27，包含电子漂移层22和电子供给层26的再生长层27，源电极S和位于在再生长层上。栅电极G覆盖长度对应于p型GaN基阻挡层的厚度的部分，并且终止在壁表面上的位置，该位置远离开口的底部。

8. 发明申请

US20140203329A1 NITRIDE ELECTRONIC DEVICE AND METHOD FOR FABRICATING NITRIDE ELECTRONIC DEVICE 审中-公开
标题翻译：氮化物电子器件及其制造方法
公开(公告)号：US20140203329A1
公开(公告)日：2014-07-24
申请号：US14123738
申请日：2011-06-03
申请人： Yu Saitoh , Masaya Okada , Yusuke Yoshizumi , Makoto Kiyama , Masaki Ueno , Koji Katayama , Takao Nakamura
发明人： Yu Saitoh , Masaya Okada , Yusuke Yoshizumi , Makoto Kiyama , Masaki Ueno , Koji Katayama , Takao Nakamura
IPC分类号： H01L29/66 , H01L29/778
CPC分类号： H01L29/66462 , H01L21/02389 , H01L21/0243 , H01L21/02433 , H01L21/0254 , H01L21/0262 , H01L21/30621 , H01L21/3085 , H01L21/3086 , H01L29/045 , H01L29/2003 , H01L29/41766 , H01L29/7788 , H01L29/7789
摘要： Provided is a nitride electronic device having a structure that allows the reduction of leakage by preventing the carrier concentration from increasing in a channel layer. An inclined surface and a primary surface of a semiconductor stack extend along first and second reference planes R1, R2, respectively. The primary surface of the stack is inclined at an angle ranging from 5 to 40 degrees with respect to a reference axis indicating a c-axis direction of hexagonal group III nitride. An axis normal to the plane R1 and the axis form an angle smaller than the angle an axis normal to the plane R2 and the axis form. The oxygen concentration of the channel layer is lower than 1×1017 cm−3. It becomes possible to avoid increase in carrier concentration of the channel layer caused by the oxygen addition, thereby reducing leakage current via the channel layer in the transistor.
摘要翻译：本发明提供一种氮化物电子器件，其具有通过防止载流子浓度在沟道层中增加而允许减少泄漏的结构。半导体堆叠的倾斜表面和主表面分别沿着第一和第二参考平面R1，R2延伸。堆叠的主表面相对于表示六方晶III族氮化物的c轴方向的参考轴线以5至40度的角度倾斜。与平面R1和轴垂直的轴线形成比垂直于平面R2的轴线和轴线的角度小的角度。通道层的氧浓度低于1×1017cm-3。可以避免由氧添加引起的沟道层的载流子浓度增加，从而减小晶体管中的沟道层的漏电流。

9. 发明授权

US08816398B2 Semiconductor device and method for producing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08816398B2
公开(公告)日：2014-08-26
申请号：US13824043
申请日：2011-07-06
申请人： Makoto Kiyama , Yu Saitoh , Masaya Okada , Seiji Yaegashi , Kazutaka Inoue , Mitsunori Yokoyama
发明人： Makoto Kiyama , Yu Saitoh , Masaya Okada , Seiji Yaegashi , Kazutaka Inoue , Mitsunori Yokoyama
IPC分类号： H01L29/66 , H01L29/778 , H01L29/15 , H01L29/423 , H01L29/06 , H01L29/20
CPC分类号： H01L29/778 , H01L29/0696 , H01L29/155 , H01L29/2003 , H01L29/4236 , H01L29/66462 , H01L29/7788 , H01L29/7789
摘要： There is provided a vertical GaN-based semiconductor device in which the on-resistance can be decreased while the breakdown voltage characteristics are improved using a p-type GaN barrier layer. The semiconductor device includes a regrown layer 27 including a channel located on a wall surface of an opening 28, a p-type barrier layer 6 whose end face is covered, a source layer 7 that is in contact with the p-type barrier layer, a gate electrode G located on the regrown layer, and a source electrode S located around the opening. In the semiconductor device, the source layer has a superlattice structure that is constituted by a stacked layer including a first layer (a layer) having a lattice constant smaller than that of the p-type barrier layer and a second layer (b layer) having a lattice constant larger than that of the first layer.
摘要翻译：提供了一种垂直GaN基半导体器件，其中可以使用p型GaN势垒层改善导通电阻，同时提高击穿电压特性。半导体器件包括再生长层27，其包括位于开口28的壁表面上的沟道，其端面被覆盖的p型势垒层6，与p型势垒层接触的源极层7，位于再生长层上的栅电极G和位于开口周围的源电极S. 在半导体器件中，源极层具有超晶格结构，该超晶格结构由包括具有比p型势垒层的晶格常数小的晶格常数的第一层（层）的层叠层和具有比p型阻挡层的晶格常数小的第二层（b层）大于第一层的晶格常数。

10. 发明申请

US20140110758A1 SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20140110758A1
公开(公告)日：2014-04-24
申请号：US14124600
申请日：2011-06-08
申请人： Yu Saitoh , Masaya Okada , Masaki Ueno , Makoto Kiyama
发明人： Yu Saitoh , Masaya Okada , Masaki Ueno , Makoto Kiyama
IPC分类号： H01L29/778 , H01L29/66
CPC分类号： H01L29/66431 , H01L29/0623 , H01L29/0692 , H01L29/2003 , H01L29/4236 , H01L29/42364 , H01L29/66462 , H01L29/7787 , H01L29/7788 , H01L29/7789 , H01L29/8128
摘要： The semiconductor device is formed in the form of a GaN-based stacked layer including an n-type drift layer 4, a p-type layer 6, and an n-type top layer 8. The semiconductor device includes a regrown layer 27 formed so as to cover a portion of the GaN-based stacked layer that is exposed to an opening 28, the regrown layer 27 including a channel. The channel is two-dimensional electron gas formed at an interface between the electron drift layer and the electron supply layer. When the electron drift layer 22 is assumed to have a thickness of d, the p-type layer 6 has a thickness in the range of d to 10d, and a graded p-type impurity layer 7 whose concentration decreases from a p-type impurity concentration in the p-type layer is formed so as to extend from a (p-type layer/n-type top layer) interface to the inside of the n-type top layer.
摘要翻译：半导体器件形成为包括n型漂移层4，p型层6和n型顶层8的GaN基叠层的形式。半导体器件包括如下形成的再生长层27 为了覆盖暴露于开口28的GaN基叠层的一部分，再生长层27包括沟道。通道是在电子漂移层和电子供给层之间的界面处形成的二维电子气。当假定电子漂移层22的厚度为d时，p型层6的厚度在d至10d的范围内，并且p型杂质层7的浓度从p型杂质降低从（p型层/ n型顶层）界面向n型顶层的内部形成p型层的浓度。

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